# Bipolar (BJT) Single Transistor, Darlington, NPN, 300 V, 7 A, 80 W, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1440104/)

**URL**: https://novapart.co/products/TIP150/bipolar-bjt-single-transistor-darlington-npn-300-v
**SKU**: TIP150
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.9740
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 80W |
| Dc Current Gain Hfe | 150hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 150hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 7A |
| Collector Emitter Voltage Max | 300V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1440104/)

## **Transistor** 

## **Features** 

- Collector-Emitter Sustaining Voltage - VCEO (sus) = 30V (Minimum) 

- Collector-Emitter Saturation Voltage VCE (sat) = 2V (Maximum) at Ic = 5A 

• Reverse-Base SOA - 300V to 400V at 7A 

## **Maximum Ratings** 

|**Maximum Ratings**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Ratings**|**Unit**|
|Collector - Emitter Voltage|VCEO|300|V|
|Collector - Base Voltage|VCBO|||
|Emitter - Base Voltage|VEBO|8||
|Collector Current  - Continuous<br>- Peak|Ic<br>Icm|7<br>10|A|
|Base Current|Ib|1.5||
|Total Power Dissipation at Tc= 25°C<br>Derate above 25°C|Pd|80<br>0.64|W<br>W / °C|
|Operatingand Storage Junction Temperature Range|Tj, TsTg|-65 to +150|°C|



**NPN** TIP150 7 Amperes ~~—~~ Darlington Power Transistor 300V to 400V 80W 

## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Maximum**|**Unit**|
|Thermal Resistance Junction to case|RθJC|1.56|°C / W|



## **Electrical Characteristics (Tc = 25°C unless otherwise specified)** 

|**Characteristic**|**Symbol**|**Minimum**|**Maximum**|**Unit**|
|---|---|---|---|---|
|**OFF Characteristics**|||||
|Collector - Emitter Breakdown Voltage (1)<br>(Ic= 10mA, lb= 0)|V(BR) CEO|300|-|V|
|Collector - Base Breakdown Voltage (1)<br>(lc= 1mA, lb= 0)|V(bR) cbO||||
|Collector Cutoff Current<br>(Vce= 300V, Ib= 0)|IceO|-|250|μA|



Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

17/04/20 V1.0 

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## **Transistor** 

|**Characteristic**|**Characteristic**|**Symbol**|**Minimum**|**Maximum**|**Unit**|
|---|---|---|---|---|---|
|Emitter Cut off Current<br>(Veb= 5V, Ic= 0)||IebO|-|15|mA|
|**ON Characteristics(1)**||||||
|DC Current Gain<br>(IC= 2.5A, VCE= 5V)<br>(IC= 5A, VCE= 5V)<br>(IC= 7A, VCE= 5V)||hFE|150<br>50<br>15|-|-|
|Collector-Emitter Saturation Voltage<br>(Ic= 1A, Ib= 10mA)<br>(Ic= 2A, Ib= 100mA)<br>(Ic= 5A, Ib= 250mA)||VCE (sat)|-|1.5<br>1.5<br>2|V|
|Base-Emitter Saturation Voltage<br>(Ic= 2A, Ib= 100mA)<br>(Ic= 5A, Ib= 250mA)||VBE (sat)|-|2.2<br>2.3||
|Diode Forward Voltage<br>(If= 7A)||Vf|-|3.5||
|**Dynamic Characteristics**||||||
|Small-Signal Current Gain<br>(lc= 0.5A, Vce= 5V, f = 1kHz)||Hfe|200|-|-|
|Output Capacitance<br>(Vcb= 10V, Ie= 0, f = 1MHz)||cob|-|150|pF|
|**Switching Characteristics**||||||
|DelayTime|Vcc= 33V, Ic= 6.5A|td|30(Typical)|-|µs|
|Rise Time|IB1= -IB2= 250mA<br>tp = 20µs,<br>Duty cycle ≤2%|tr|180(Typical)|-||
|Storage Time||ts|3.5(Typical)|-||
|Fall Time||tf|1.6(Typical)|-||



1. Pulse Test : Pulse width = 30µs, Duty cycle = 2% 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

17/04/20 V1.0 

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## **Transistor** 

There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown safe operating area curves indicate Ic-Vce : limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate The data of figure - 6 curve is based on TJ (PK) = 150°C; TC is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ (PK) <150°C. At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown 

## **Diagram** 

|**Dimensions**|**Minimum**|**Maximum**||**Dimensions**|**Minimum**|**Maximum**|
|---|---|---|---|---|---|---|
|A<br>14.68<br>B<br>9.78<br>t<br>~~4~~<br>~~c~~<br>~~;~~||15.31<br>10.42||H<br>I|0.72<br>4.22|0.96<br>4.98|
|~~;~~|||||||
|C|5.01|8.52||J|1.14|1.38|
|D<br>E<br>F<br>a|13.06<br>3.57<br>2.42|14.62<br>4.07<br>3.66||K<br>L<br>M|2.2<br>0.33<br>2.48|2.97<br>0.55<br>2.98|
|G|1.12|1.36||O|3.7|3.9|



Dimensions : Millimetres 

Pin  1. Base 2. Collector 

3. Emitter 

4. Collector (Case) 

## **Part Number Table** 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Darlington Transistor, TO-220|TIP150|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

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17/04/20 V1.0 

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## Links

- [View this product on Novapart](https://novapart.co/products/TIP150/bipolar-bjt-single-transistor-darlington-npn-300-v)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/multicomp/tip150/darlington-transistor-to-220/dp/1440104)
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