# Bipolar (BJT) Single Transistor, Darlington, PNP, 100 V, 10 A, 125 W, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:9294589/)

**URL**: https://novapart.co/products/TIP147/bipolar-bjt-single-transistor-darlington-pnp-100-v
**SKU**: TIP147
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €1.0000
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 125W |
| Dc Current Gain Hfe | 1000hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transistor Case Style | TO-247 |
| Dc Current Gain Hfe Min | 1000hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 10A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9294589/)

## **Darlington Transistors** 

## **Features** 

- Designed for general-purpose amplifier and low speed switching applications 

- Collector-Emitter sustaining voltage 

- VCEO (sus)  = 60V (Minimum) - TIP145 

**NPN PNP** TIP141 TIP145 TIP142 TIP146 - TIP147 10 Amperes Darlington Complementary Silicon Power Transistors 60V - 100V 125W 

   - = 80V (Minimum) - TIP141, TIP146 

   - = 100V (Minimum) - TIP142, TIP147 

- Collector-Emitter saturation voltage 

- VCE (sat) = 2V (Maximum) at Ic = 5A 

- Monolithic construction with Built-in Base-Emitter shunt resistor 

## **Maximum Ratings** 

|**Maximum Ratings**||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**TIP145**|**TIP141**<br>**TIP146**|**TIP142**<br>**TIP147**|**Unit**|
|Collector - Emitter Voltage|VCEO|60|80|100|V|
|Collector - Base Voltage|VCBO|||||
|Emitter - Base Voltage|VEBO|5||||
|Collector Current  - Continuous<br>- Peak|Ic<br>Icm|10<br>15|||A|
|Base Current|Ib|0.5||||
|Total Power Dissipation at Tc= 25°C<br>Derate above 25°C|Pd|125<br>1|||W<br>W / °C|
|Operating and Storage Junction<br>Temperature Range|Tj, TsTg|-65 to +150|||°C|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Maximum**|**Unit**|
|Thermal Resistance Junction to case|RθJC|1|°C / W|



Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

01/04/20 V1.0 

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## **Darlington Transistors** 

## **Electrical Characteristics (Tc = 25°C unless otherwise specified)** 

|**Characteristic**|**Characteristic**|**Symbol**|**Minimum**|**Maximum**|**Unit**|
|---|---|---|---|---|---|
|**OFF Characteristics**||||||
|Collector - Emitter Sustaining Voltage (1)<br>(Ic= 30mA, Ib= 0)    TIP145<br>TIP141, TIP146<br>TIP142, TIP147||VCEO (sus)|60<br>80<br>100|-|V|
|Collector Cut off Current<br>(Vce= 30V, Ib= 0)   TIP145<br>(Vce= 40V, Ib= 0)   TIP141, TIP146<br>(Vce= 50V, Ib= 0)TIP142, TIP147||Iceo|-|2<br>2<br>2|mA|
|Collector Cut off Current<br>(Vcb= 60V, Ie= 0)   TIP145<br>(Vcb= 80V, Ie= 0)   TIP141, TIP146<br>(Vcb= 100V, Ie= 0)TIP142, TIP147||Icbo|-|1<br>1<br>1||
|Emitter Cut off Current<br>(Veb= 5V, Ic= 0)||Iebo|-|2||
|**ON Characteristics(1)**||||||
|DC Current Gain<br>(Ic= 5A, Vce= 4V)<br>(Ic= 10A, Vce= 4V)||hFE|1,000<br>500|-|-|
|Collector - Emitter Saturation Voltage<br>(Ic= 5A, Ib= 10mA)<br>(Ic= 10A, Ib= 40mA)||VCE (sat)|-|2<br>3|V|
|Base - Emitter Saturation Voltage<br>(Ic= 10A, Ib= 40mA)||VBE (sat)|-|3.5||
|Base - Emitter On Voltage<br>(Ic= 10A, Vce= 4V)||VBE (on)|-|3||
|**Switching Characteristics**||||||
|DelayTime|Vcc= 30V, Ic= 5A<br>IB1= -IB2= 20mA<br>tp = 20µs,<br>Duty cycle ≤2%|td|0.15(Typical)|-|µs|
|Rise Time||tr|0.55(Typical)|-||
|Storage Time||ts|2.5 (Typical)|-||
|Fall Time||tf||-||



1. Pulse Test : Pulse width = 30µs, Duty cycle = 2% 

## **Internal Schematic Diagram** 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

01/04/20 V1.0 

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## **Darlington Transistors** 

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate Ic - Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. 

The data of SOA curve is base on Tj (PK) = 150°C; Tc is variable depending on conditions. At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

01/04/20 V1.0 

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## **Darlington Transistors** 

## **Diagram** 

|**Dimensions**|**Minimum**|**Maximum**||**Dimensions**|**Minimum**|**Maximum**|
|---|---|---|---|---|---|---|
|A|20.63|22.38||I|2.92|3.23|
|B|15.38|16.2||J|0.89|1.53|
|C|1.9|2.7||K|5.26|5.66|
|D|5.1|6.1||L|18.5|21.5|
|E|14.81|15.22||M|4.68|5.36|
|F|11.72|12.84||N|2.4|2.8|
|G|4.2|4.5||O|3.25|3.65|
|H|1.82|2.46||P|0.55|0.7|



Dimensions : Millimetres 

## **Specification Table** 

|**Ic**<br>**(A)**|**Vceo**<br>**Maximum**<br>**(V)**|**hFE Minimum at**<br>**Ic = 5A**|**Ptot at 25°C**<br>**(W)**|**Package**|**Type**|**Part Number**|
|---|---|---|---|---|---|---|
|10|80|1,000|125|TO-247 (3P)|NPN|TIP141|
||100|||||TIP142|
||60||||PNP|TIP145|
||80|||||TIP146|
||100|||||TIP147|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

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01/04/20 V1.0 

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## Links

- [View this product on Novapart](https://novapart.co/products/TIP147/bipolar-bjt-single-transistor-darlington-pnp-100-v)
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- [Supplier page](https://es.farnell.com/en-ES/multicomp-pro/tip147/darlington-transistor-to-247/dp/9294589)
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