# Bipolar (BJT) Single Transistor, PNP, 80 V, 4 A, 50 W, TO-220, Through Hole
**URL**: https://novapart.co/products/TIP116/bipolar-bjt-single-transistor-pnp-80-v-4-a-50-w-to
**SKU**: TIP116
**Manufacturer**: MULTICOMP
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.2620
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 50W |
| Dc Current Gain Hfe | 1000hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 1000hFE |
| Operating Temperature Max | 120°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 80V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1862512/)
## **General Purpose Transistor**
## **Description:**
A silicon PNP Darlington transistor in a TO-220 type case designed for general-purpose amplifier and low-speed switching applications.
## **Features:**
- High DC Current Gain
## **PNP** Compliant
- Monolithic Construction with Built-in Base-Emitter Shunt Resistors
## **Absolute Maximum Ratings**
|**Absolute Maximum Ratings**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Rating**|**Unit**|
|Collector-Emitter Voltage|VCEO|80|V|
|Collector-Base Voltage|VCBO|80||
|Emitter-Base Voltage|VEBO|5||
|Continuous Collector Current
Peak|IC|4
6|A|
|Total Device Dissipation at Tc= 25°C
Derate above 25°C|PD|50
0.4|W
mW/°C|
|Total Device Dissipation at Tc= 25°C
Derate above 25°C|PD|2
0.016||
|Operating and Storage
Junction Temperature Range|Tj, Tstg|-65 to +120|°C|
|Thermal Resistance, Junction-to-Case|RthJC|2.5|°C/W|
|Thermal Resistance, Junction-to-Ambient (Note 1)|RthJA|62.5||
## **Pin Configuration:**
1. Base
2. Collector
3. Emitter
4. Collector
**Electrical Characteristics (Ta = 25°C unless otherwise specified)**
|**Parameter**
**Symbol**
**Test Conditions**
**Min.**
**Max.**
**Unit**
**OFF Characteristics**
~~a~~|**Parameter**
**Symbol**
**Test Conditions**
**Min.**
**Max.**
**Unit**
**OFF Characteristics**
~~a~~|**Parameter**
**Symbol**
**Test Conditions**
**Min.**
**Max.**
**Unit**
**OFF Characteristics**
~~a~~|**Parameter**
**Symbol**
**Test Conditions**
**Min.**
**Max.**
**Unit**
**OFF Characteristics**
~~a~~|**Parameter**
**Symbol**
**Test Conditions**
**Min.**
**Max.**
**Unit**
**OFF Characteristics**
~~a~~|**Parameter**
**Symbol**
**Test Conditions**
**Min.**
**Max.**
**Unit**
**OFF Characteristics**
~~a~~|
|---|---|---|---|---|---|
|Collector - Emitter Breakdown Voltage (Note 2)|V(BR)CEO|IC=30mA, IB=0|80|-|V|
|Collector Cut-Off Current|ICBO|VCB=80V, IE=0|-|1||
||ICEO|VCB=40V, IB=0|-|2|mA|
|Emitter Cut-Off Current|IEBO|VEB=5V, IC=0|-|2||
|**ON Characteristics (Note 2)**||||||
|DC Current Gain|hFE|VCE=4V, IC=1A
VCE=4V, IC=2A|1,000
500||-
-|
www.element14.com www.farnell.com www.newark.com
Page <1>
23/04/13 V1.0
## **General Purpose Transistor**
**Electrical Characteristics (Ta = 25°C unless otherwise specified)**
**Parameter Symbol Test Conditions Min. Max. Unit** Collector - Emitter Saturation Voltage VCE(sat) IC=2A, IB=8mA - 2.5 V ~~ee~~ Base-Emitter On Voltage VBE(on) IC=2A, VCE=4V - 2.8 **Dynamic Characteristics** ~~CC~~ Output Capacitance Cobo VCB=10V, IE=0, f=0.1MHz - pF
Note 1. IC = 1A, L = 100mH, P.R.F = 10Hz, VCC = 20V, RBE = 100Ω. Note 2. Pulse test: Pulse Width % 300μs, Duty Cycle % 2%.
**Pin Configuration:** 1. Emitter 2. Base 3. Collector
|**Dimensions**|**Min.**|**Max.**|
|---|---|---|
|A|14.42|16.51|
|B|9.63|10.67|
|C|3.56|4.83|
|D|-|0.9|
|E|1.15|1.4|
|F|3.75|3.88|
|G|2.29|2.79|
|H|2.54|3.43|
|J|-|0.56|
|K|12.7|14.73|
|L|2.8|4.07|
|M|2.03|2.92|
|N|-|31.24|
|O|7°||
Dimensions : Millimetres
## **Part Number Table**
**Description Part Number** Transistor, PNP, 2A, 60V, TO-220 TIP116 ~~——~~
**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012. ~~a~~ www.element14.com www.farnell.com www.newark.com multicomp
23/04/13 V1.0
Page <2>
## Links
- [View this product on Novapart](https://novapart.co/products/TIP116/bipolar-bjt-single-transistor-pnp-80-v-4-a-50-w-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/multicomp/tip116/transistor-pnp-2a-60v-to220/dp/1862512)
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