# Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 2 A, 2 W, TO-220, Through Hole
**URL**: https://novapart.co/products/TIP112/bipolar-bjt-single-transistor-darlington-npn-100-v
**SKU**: TIP112
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.5130
**Stock**: 1000+
**Lead Time**: 2 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 2W |
| Dc Current Gain Hfe | 1000hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 1000hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 2A |
| Collector Emitter Voltage Max | 100V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:9803971/)
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®
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## **TIP110/112 TIP115/117**
## COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- I STMicroelectronics PREFERRED SALESTYPES
- I COMPLEMENTARY PNP - NPN DEVICES
- I MONOLITHIC DARLINGTON CONFIGURATION
- I INTEGRATED ANTIPARALLEL
- COLLECTOR-EMITTER DIODE
## **APPLICATIONS**
- I LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
## **DESCRIPTION**
The TIP110 and TIP112 are silicon Epitaxial-Base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications.
The complementary PNP types are TIP115 and TIP117.
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2
1
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TO-220
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## **INTERNAL SCHEMATIC DIAGRAM**
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R1 Typ.= 7K Ω R2 Typ.= 230
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## **ABSOLUTE MAXIMUM RATINGS**
|**Symbol**|**Parameter**||**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|
|||**NPN**|**TIP110**|**TIP112**||
|||**PNP**|**TIP115**|**TIP117**||
|VCBO|Collector-Base Voltage(IE= 0)||60|100|V|
|VCEO|Collector-Emitter Voltage(IB= 0)||60|100|V|
|VEBO|Emitter-Base Voltage(IC= 0)||5||V|
|IC|Collector Current||2||A|
|ICM|Collector Peak Current||4||A|
|IB|Base Current||50||mA|
|Ptot|Total Dissipation at Tcase ≤25oC
Tamb ≤25oC||50
2||W
W|
|Tstg|Storage Temperature||-65 to 150||oC|
|Tj|Max. OperatingJunction Temperature||150||oC|
* For PNP types voltage and current values are negative
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June 1999
**TIP110/TIP112/TIP115/TIP117**
## **THERMAL DATA**
|Rthj-case
Rthj-amb
Therm
Therm|al Resistance Junction-case Max
al Resistance Junction-ambient Max|2.5
62.5|oC/W
oC/W|
|---|---|---|---|
## **ELECTRICAL CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified)
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICEO
Collec
Curre|tor Cut-off
nt(IB= 0)|VCE= Half Rated VCEO|||2|mA|
|ICBO
Collec
Curre|tor Cut-off
nt(IE= 0)|VCB= Rated VCBO|||1|mA|
|IEBO
Emitte
(IC= 0|r Cut-off Current
)|VEB= 5 V|||2|mA|
|VCEO(sus)∗Collec
Sustai
(IB= 0|tor-Emitter
ning Voltage
)|IC= 30 mA
for**TIP110/115**
for**TIP112/117**|60
100|||V
V|
|VCE(sat)∗
Collec
Satura|tor-Emitter
tion Voltage|IC= 2 A IB= 8 mA|||2.5|V|
|VBE∗
Base-|Emitter Voltage|IC= 2 A VCE= 4 V|||2.8|V|
|hFE∗
DC C|urrent Gain|IC= 1 A VCE= 4 V
IC= 2 A VCE= 4 V|1000
500||||
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative.
## Safe Operating Areas
## Derating Curve
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**TIP110/TIP112/TIP115/TIP117**
DC Current Gain (NPN type)
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Collector-Emitter Saturation Voltage (NPN type)
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Base-Emitter Saturation Voltage (NPN type)
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DC Current Gain (PNP type)
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Collector-Emitter Saturation Voltage (PNP type)
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Base-Emitter Saturation Voltage (PNP type)
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**TIP110/TIP112/TIP115/TIP117**
Base-Emitter On Voltage (NPN type)
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Freewheel Diode Forward Voltage (NPN types)
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Base-Emitter On Voltage (PNP type)
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Freewheel Diode Forward Voltage (PNP types)
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**TIP110/TIP112/TIP115/TIP117**
## **TO-220 MECHANICAL DATA**
|**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.40||4.60|0.173||0.181|
|C|1.23||1.32|0.048||0.051|
|D|2.40||2.72|0.094||0.107|
|D1||1.27|||0.050||
|E|0.49||0.70|0.019||0.027|
|F|0.61||0.88|0.024||0.034|
|F1|1.14||1.70|0.044||0.067|
|F2|1.14||1.70|0.044||0.067|
|G|4.95||5.15|0.194||0.203|
|G1|2.4||2.7|0.094||0.106|
|H2|10.0||10.40|0.393||0.409|
|L2||16.4|||0.645||
|L4|13.0||14.0|0.511||0.551|
|L5|2.65||2.95|0.104||0.116|
|L6|15.25||15.75|0.600||0.620|
|L7|6.2||6.6|0.244||0.260|
|L9|3.5||3.93|0.137||0.154|
|DIA.|3.75||3.85|0.147||0.151|
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P011C
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**TIP110/TIP112/TIP115/TIP117**
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics
- © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
**http://www.st.com**
.
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## Links
- [View this product on Novapart](https://novapart.co/products/TIP112/bipolar-bjt-single-transistor-darlington-npn-100-v)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/tip112/darlington-transistor-to-220/dp/9803971)
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