# Bipolar (BJT) Single Transistor, PNP, 100 V, 8 A, 80 W, TO-220, Through Hole

![Product image](https://novapart.co/image/farnell:1574338/)

**URL**: https://novapart.co/products/TIP107/bipolar-bjt-single-transistor-pnp-100-v-8-a-80-w
**SKU**: TIP107
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.5840
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 80W |
| Dc Current Gain Hfe | 200hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 200hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 8A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1574338/)

## **Power Darlington Transistor** 

**Pin Configuration:** 

1. Base 

2. Collector 

3. Emitter 

4. Collector 

## **Feature:** 

- PNP Plastic Power Darlington Transistors for Linear and Switching Applications 

## **Absolute Maximum Ratings:** 

|**Absolute Maximum Ratings:**|||||
|---|---|---|---|---|
|**Parameters**|**Symbol**|**-**|**TIP107**|**Unit**|
|Collector-Base Voltage (Open Emitter)|VCBO|Max.|100|V|
|Collector Emitter Voltage (Open Base)|VCEO||||
|Collector Current|IC||8|A|
|Total Power Dissipation upto TC= 25°C|Ptot||80|W|
|Junction Temperature|Tj||150|°C|
|Collector-Emittert Saturation Voltage<br>IC= 3A, IB= 6mA|VCE (sat)||2|V|
|DC Current Gain<br>IC= 3A; VCE= 4V|hFE|Min.<br>Max.|1<br>20|-|



## **Ratings (at Ta = 25°C unless otherwise specified)** 

|Collector-Base Voltage (Open Emitter)|VCBO|Max.|100|V|
|---|---|---|---|---|
|Collector Emitter Voltage (Open Base)|VCEO||||
|Emitter-Base Voltage (Open Collector)|VEBO||5||
|Collector Current|IC||8|A|
|Collector Peak Current|ICM||15||



Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

18/09/19 V1.0 

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## **Power Darlington Transistor** 

## **Ratings (at Ta = 25°C unless otherwise specified)** 

|**Parameters**|**Symbol**|**-**|**TIP107**|**Unit**|
|---|---|---|---|---|
|Base Current|IB|Max.|1|A|
|Total Power Dissipation upto TC= 25°C<br>Derate above 25°C|Ptot||80<br>0.64|W<br>W/°C|
|Total Power Dissipation upto T = 25°C<br>Derate above 25°C|||2<br>0.016||
|Junction Temperature|Tj||150|°C|
|Storage Temperature|Tstg||-65 to +150||
|**Thermal Resistance**|||||
|From Junction to Ambient|Rth (j-a)|-|62.5|°C/W|
|From Junction to Case|Rth (j-c)|-|1.56||
|**Characteristics (Ta = 25°C unless otherwise specifed)**|||||
|Collector Cut off Current<br>IB= 0; VCE= 50V<br>IE= 0; VCB= 100V|ICEO<br>ICBO|Max.|50<br>50|µA|
|Emitter Cut off Current<br>IC= 0; VEB= 5V|IEBO||8|mA|
|Breakdown Voltages<br>IC= 30mA; IB= 0<br>IC= 1mA; IE= 0<br>IE= 1mA; IC= 0|VCEO (sus)*<br>VCBO<br>VEBO|Min.|100<br>100<br>5|V|
|Saturation Voltages<br>IC= 3A; IB= 6mA<br>IC= 8A; IB= 80mA|VCE (sat)*|Max.|2<br>2.5||
|Base-Emitter on Voltage<br>IC= 8A; VCE= 4V|VBE (on)*||2.8||
|DC Current Gain<br>IC= 3A; VCE= 4V<br>IC= 8A; VCE= 4V|hFE*|Min.<br>Max.<br>Min.|1<br>20<br>200|-|
|Small Signal Current Gain<br>IC= 3A; VCE= 4V; f = 1MHz||hfe||Min.|4|-|
|Output Capacitance<br>IE= 0; VCB= 10V; f = 0.1MHz|CO|Max.|300|pF|
|Forward Voltage of Commutation Diode<br>IF= -IC= 10A; IB= 0|VF*|Min.|2.8|V|



* Pulsed : Pulse Duration = 300μs; Duty Cycle ≤2%. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

18/09/19 V1.0 

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## **Power Darlington Transistor** 

**Pin Configuration:** 1. Base 

2. Collector 

3. Emitter 

|**Dimensions**|**Minimum**|**Maximum**|
|---|---|---|
|A|14.42|16.51|
|B|9.63|10.67|
|C|3.56|4.83|
|D|-|0.9|
|E|1.15|1.4|
|F|3.75|3.88|
|G|2.29|2.79|
|H|2.54|3.43|
|J|-|0.56|
|K|12.7|14.73|
|L|2.8|4.07|
|M|2.03|2.92|
|N|-|31.24|
|O|7°||



4. Collector 

Dimensions : Millimetres 

**Part Number Table Description Part Number** ~~———~~ Darlington Transistor, TO-220 TIP107 

**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

18/09/19 V1.0 

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## Links

- [View this product on Novapart](https://novapart.co/products/TIP107/bipolar-bjt-single-transistor-pnp-100-v-8-a-80-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/multicomp/tip107/darlington-transistor-to-220/dp/1574338)
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