# JFET Transistor, -30 V, 3 mA, -1.5 V, SOT-883, 3 Pin, 150 °C
**URL**: https://novapart.co/products/TF412ST5G/jfet-transistor-30-v-3-ma-15-sot-883-pin-150-c
**SKU**: TF412ST5G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || JFETs
**Price**: €0.0870
**Stock**: 1000+
## Description
Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss Min:1.2mA; Zero Gate Voltage Drain Current Idss Max:3mA; Gate-Source Cutoff Voltage Vgs(off) Max:-1.5V; Transistor Case St
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Transistor Type | JFET |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | SOT-883 |
| Operating Temperature Max | 150°C |
| Gate Source Cutoff Voltage Max | -1.5V |
| Gate Source Breakdown Voltage Max | -30V |
| Zero Gate Voltage Drain Current Max | 3mA |
| Zero Gate Voltage Drain Current Idss Min | 1.2mA |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2473421/)
## N-Channel JFET 30 V, 1.2 to 3.0 mA, 5.0 mS, SOT-883
## TF412S
## **Features**
- Small IGSS: Max −1.0 nA (VGS = −20 V, VDS = 0 V)
- Small Ciss: Typ 4 pF (VDS = 10 V, VGS = 0 V, f = 1 MHz)
**www.onsemi.com**
- Ultrasmall Package Facilitates Miniaturization in End Products
• This is a Pb−Free and Halogen Free Device **ELETRICAL CONNECTION** 3 **Applications** 1: Source • Low−Frequency General−purpose Amplifier, Impedance Conversion, 2: Drain 3: Gate Infrared Sensor Applications ~~A~~ 1 2 Top View **Specifications** 3 **ABSOLUTE MAXIMUM RATINGS** (at Ta = 25 ° C) 1 **Symbol Parameter Value Unit** ~~S~~ VDSX Drain−to−Source Voltage 30 V 2 VGDS Gate−to−Drain Voltage −30 V **SOT−883 (XDFN3)CASE 506CB** IG Gate Current 10 mA ID Drain Current 10 mA **MARKING DIAGRAM** PD Power Dissipation 100 mW Tj Junction Temperature 150 ° C A2 M Tstg Storage Temperature −55 to +150 ° C ~~==~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be A2 = Specific Device Code assumed, damage may occur and reliability may be affected. M = Date Code NOTE: This product is designed to “ESD immunity < 200 V*”, so please take care when handling. * Machine Model **ORDERING INFORMATION Device Package Shipping**[†] ~~———~~ TF412ST5G SOT−883 8.000 Tape / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Publication Order Number:
**1**
© Semiconductor Components Industries, LLC, 2014 **April, 2021 − Rev. 2**
**TF412S/D**
**TF412S**
## **ELECTRICAL CHARACTERISTICS** (at TA = 25 ° C)
|**ELECTRIC**|**AL CHARACTERISTICS**(at TA= 2|5°C)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|V(BR)GDS|Gate−to−Drain Breakdown Voltage|IG= −10�A, VDS= 0 V|−30|||V|
|IGSS|Gate−to−Source Leakage Current|VGS= −20 V, VDS= 0 V|||−1.0|nA|
|VGS(off)|Cutoff Voltage|VDS= 10 V, ID= 1�A|−0.18|−0.80|−1.5|V|
|IDSS|Drain Current|VDS= 10 V, VGS= 0 V|1.2||3.0|mA|
|| yfs ||Forward Transfer Admittance|VDS= 10 V, VGS= 0 V, f = 1 kHz|3.0|5.0||mS|
|Ciss|Input Capacitance|VDS= 10 V, VGS= 0 V, f = 1 MHz||4||pF|
|Crss|Reverse Transfer Capacitance|||1.1||pF|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
**www.onsemi.com**
**2**
**TF412S**
## **TYPICAL CHARACTERISTICS**
**==> picture [226 x 628] intentionally omitted <==**
**----- Start of picture text -----**
3.0
2.5
2.0 V GS = 0 V
1.5 −0.1 V
1.0 −0.2 V
−0.3 V
0.5
−0.4 V
0
0 1 2 3 4 5
VDS, Drain−to−Source Voltage (V)
Figure 1. ID − VDS
3.5
VDS = 10 V
3.0
2.5
IDSS = 3.0 mA
2.0
1.5
1.0
2.0 mA
0.5
0
−1.0 −0.8 −0.6 −0.4 −0.2 0
VGS, Gate−to−Source Voltage (V)
Figure 3. ID − VGS
−1.4
VDS = 10 V
−1.2 ID = 1.0 � A
−1.0
−0.8
−0.6
−0.4
−0.2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
IDSS, Drain Current (mA)
, Drain Current (mA)
ID
, Drain Current (mA)
ID
(off), Cutoff Voltage (V)
GS
V
**----- End of picture text -----**
**Figure 5. VGS(off) − IDSS**
**==> picture [224 x 184] intentionally omitted <==**
**----- Start of picture text -----**
3.0
2.5 VGS = 0 V
2.0 −0.1 V
1.5 −0.2 V
−0.3 V
1.0
−0.4 V
0.5
0
0 5 10 15 20 25 30
VDS, Drain−to−Source Voltage (V)
, Drain Current (mA)
ID
**----- End of picture text -----**
**Figure 2. ID − VDS**
**==> picture [225 x 184] intentionally omitted <==**
**----- Start of picture text -----**
3.5
VDS = 10 V
3.0
2.5
2.0
1.5
1.0 Ta = 75 ° C
0.5 25 ° C
−25 ° C
0
−1.0 −0.8 −0.6 −0.4 −0.2 0
VGS, Gate−to−Source Voltage (V)
, Drain Current (mA)
ID
**----- End of picture text -----**
**Figure 4. ID − VGS**
**==> picture [220 x 184] intentionally omitted <==**
**----- Start of picture text -----**
7
VDS = 10 V
VGS = 0 V
6 f = 1 kHz
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
IDSS, Drain Current (mA)
, Forward Transfer Admittance (mS)
⎪
yfs
⎪
**----- End of picture text -----**
**Figure 6.** � **yfs** � **− IDSS**
**www.onsemi.com**
**3**
**TF412S**
## **TYPICAL CHARACTERISTICS** (continued)
**==> picture [228 x 415] intentionally omitted <==**
**----- Start of picture text -----**
10
VGS = 0 V
f = 1 MHz
7
5 BHUtat
aint
32 CUA,CTT TTT
1.0 CUICIAIU
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
VDS, Drain−to−Source Voltage (V)
Figure 7. Ciss − VDS
120
100
Pp} [tte]
80
ERNE
60 EERNEEEE
40
PL EEN EL
20
Pi t_E
0
PEE EELEINEINS
0 20 40 60 80 100 120 140 160
Ta, Ambient Temperature ( ° C)
Ciss, Input Capacitance (pF)
, Allowable Power Dissipation (mW)
D
P
**----- End of picture text -----**
**==> picture [230 x 184] intentionally omitted <==**
**----- Start of picture text -----**
10
VGS = 0 V
7 f = 1 MHz
5
3
PFmsasiigitiiatett ttt Tt ty
1.02 CET7
5
REEF EEE
3 Pett TT [TEE]
2 Pe ET
0.1 ERSHERERESAETt Tt} ty yyy et ty
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
VDS, Drain−to−Source Voltage (V)
Crss, Reverse Transfer Capacitance (pF)
**----- End of picture text -----**
**Figure 8. Crss − VDS**
**Figure 9. PD − Ta**
**www.onsemi.com**
**4**
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
**SOT−883 (XDFN3), 1.0x0.6, 0.35P** CASE 506CB ISSUE A
DATE 30 MAR 2012
**==> picture [42 x 7] intentionally omitted <==**
**----- Start of picture text -----**
SCALE 8:1
**----- End of picture text -----**
**==> picture [423 x 388] intentionally omitted <==**
**----- Start of picture text -----**
D A B NOTES:
1. DIMENSIONING AND TOLERANCING PER
REFERENCEPIN ONE o r es 2. ASME Y14.5M, 1994.CONTROLLING DIMENSION: MILLIMETERS.
ÉÉ 3. EXPOSED COPPER ALLOWED AS SHOWN.
E MILLIMETERS
0.10 C ÉÉ
ont DIM MIN MAX
A 0.340 0.440
0.10 C t A1 0.000 0.030
TOP VIEW b 0.075 0.200
D 0.950 1.075
NOTE 3 A D2 0.620 BSC
0.10 C e 0.350 BSC
_¢
E 0.550 0.675
E2 0.425 0.550
L 0.170 0.300
3X 0.10 C
A1 GENERIC
SIDE VIEW C [SEATING] PLANE MARKING DIAGRAM*
D2 XX M
E2 XX = Specific Device Code
ve nia M = Date Code —
e/2
e 1 3X L *This information is generic. Please refer
2X b to device data sheet for actual part
0.10 M C A B marking. Pb−Free indicator, “G”, may
0.05 M C or not be present.
BOTTOM VIEW
RECOMMENDED
SOLDER FOOTPRINT*
1.10
0.41
2X 0.43
1
cs. st 0.55
2X 0.20 PACKAGE
‘EQ. OUTLINE
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON65407E** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−883 (XDFN3), 1.0X0.6, 0.35P PAGE 1 OF 1** ~~[1—_~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.
~~—_~~
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **PUBLICATION ORDERING INFORMATION**
**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative
◊
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