# IGBT Module, Half Bridge, 140 A, 1.75 V, 515 W, 175 °C, Module

![Product image](https://novapart.co/image/farnell:3775917/)

**URL**: https://novapart.co/products/TDB6HK180N16RRBPSA1/igbt-module-half-bridge-140-a-175-v-515-w-c
**SKU**: TDB6HK180N16RRBPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €58.9600
**Stock**: 25+
**Lead Time**: 99 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoPACK 2 |
| Igbt Technology | - |
| Igbt Termination | Solder |
| Power Dissipation | 515W |
| Igbt Configuration | Half Bridge |
| Transistor Mounting | Panel |
| Dc Collector Current | 140A |
| Power Dissipation Pd | 515W |
| Transistor Case Style | Module |
| Operating Temperature Max | 175°C |
| Junction Temperature Tj Max | 175°C |
| Continuous Collector Current | 140A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3775917/)

IGBT-Module IGBT-modules 

## TDB6HK180N16RR 

VCES = 1200V IC nom = 180A / ICRM = 360A 

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- Al2O3 Substrat mit kleinem thermischen Widerstand 

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- Kupferbodenplatte 

- Lötverbindungstechnik 

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- Standardgehäuse 

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- Al2O3 

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1 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules TDB6HK180N16RR 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600|1600|V|
|---|---|---|---|---|---|---|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|150|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|180|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|1600<br>1400|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|13000<br>9500<br>|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 150 A|VF||1,20||V|
|Schleusenspannung<br>Thresholdvoltage|Tvj= 150°C|VTO||0,83||V|
|Ersatzwiderstand<br>Sloperesistance|Tvj= 150°C|rT||2,30||mΩ|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,35|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,165||K/W|



prepared�by:�NK date�of�publication:�2013-08-19 approved�by:�RS revision:�2.0 

2 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules TDB6HK180N16RR 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Thyristor-Gleichrichter�/�Thyristor-rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600<br>|V|
|---|---|---|---|---|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|150<br>|A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSmax|180<br>|A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tP= 10ms, Tvj= 25°C<br>tP= 10ms, Tvj= 130°C|IFSM|1550<br>1300<br>|A|
|Grenzlastintegral<br>I²t-value|tP= 10ms, Tvj= 25°C<br>tP= 10ms, Tvj= 130°C|I²t|12000<br>8450<br>|A²s|
|kritischeStromsteilheit<br>Criticalrateofriseofon-statecurrent|DIN IEC 60 754-6<br>f = 50Hz, iGM = 0,6A, diG/dt = 0,6A/µs|(di/dt)cr|100<br>|A/µs|
|kritischeSpannungssteilheit<br>Criticalrateofriseofon-statevoltage|Tvj= 130, vD = 0,67 VDRM|(dv/dt)cr|1000<br>|V/µs|



## **Charakteristische�Werte�/�Characteristic�Values** 

||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 130°C, IF= 150 A|VF||1,30||V|
|Schleusenspannung<br>Thresholdvoltage|Tvj= 130°C|V(TO)|-|0,85||V|
|Ersatzwiderstand<br>Sloperesistance|Tvj= 130°C|rT|-|3,20||mΩ|
|Zündstrom<br>Gatetriggercurrent|Tvj= 25°C, vD= 6 V|IGT|||100|mA|
|Zündspannung<br>Gatetriggervoltage|Tvj= 25°C, vD= 6 V|VGT|||2,0|V|
|NichtzündenderSteuerstrom<br>Gatenon-triggercurrent|Tvj= 130°C, vD= 6 V<br>Tvj= 130°C, vD= 0,5 VDRM|IGD|||6,0<br>3,0|mA|
|NichtzündendeSteuerspannung<br>Gatenon-triggervoltage|Tvj= 130°C, vD= 0,5 VDRM|VGD|||0,3|V|
|Haltestrom<br>Holdingcurrent|Tvj= 25°C, vD= 6 V, RA= 5Ω|IH|||220|mA|
|Einraststrom<br>Latchingcurrent|Tvj= 25°C, vD= 6 V, RGK ≥20Ω<br>iGM= 0,6 A, diG/dt = 0,6 A/µs, tg= 10 µs|IL|||550|mA|
|Zündverzug<br>Gatecontrolleddelaytime|DIN IEC 747-6<br>Tvj= 25°C, iGM= 0,6 A, diG/dt = 0,6 A/µs|tgd|||1,2|µs|
|Freiwerdezeit<br>Circuitcommutatedturn-offtime|Tvj= 130°C, iTM= 50 A<br>vRM= 100 V, VDM= 0,67 VDRM<br>dVD/dt = 20 V/µs, -diT/dt = 10 A/µs|tq||150||µs|
|Sperrstrom<br>Reversecurrent|Tvj= 130°C, VR= 1600 V|IR<br>ID|-|5,00||mA|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proThyristor/perThyristor|RthJC|||0,30|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proThyristor/perThyristor<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,14||K/W|



prepared�by:�NK date�of�publication:�2013-08-19 approved�by:�RS revision:�2.0 

3 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules TDB6HK180N16RR 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|TechnischeInformation/TechnicalInformation<br>TDB6HK180N16RR<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:NK<br>approvedby:RS<br>dateofpublication:2013-08-19<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj= 175°C<br>TC= 25°C, Tvj= 175°C<br>IC nom<br>IC<br>100<br>140<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj= 175°C<br>Ptot<br>515<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,20<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 3,55 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>7,5<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,30<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,27<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>tf<br>0,08<br>0,145<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V<br>RGon= 1,6Ω<br>Eon<br>5,50<br>8,50<br>9,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>Eoff<br>5,50<br>8,50<br>9,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>360<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,29<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,135<br>K/W||



|preparedby:NK|dateofpublication:2013-08-19|
|---|---|
|approvedby:RS|revision:2.0|



4 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules TDB6HK180N16RR 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|50|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|510|||A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||54,0<br>60,0<br>63,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||5,50<br>8,80<br>10,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,70<br>3,00<br>3,70||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,81|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,375||K/W|



date�of�publication:�2013-08-19 revision:�2.0 

prepared�by:�NK approved�by:�RS 

5 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules TDB6HK180N16RR 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||7,5|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proModul/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,02||K/W|
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||50||nH|
|HöchstzulässigeSperrschichttemperatur<br>Maximumjunctiontemperature|Wechselrichter,Brems-Chopper/inverter,brake-chopper<br>Gleichrichter/rectifier|Tvj max|||175<br>130|°C<br>°C|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions|Wechselrichter,Brems-Chopper/inverter,brake-chopper<br>Gleichrichter/rectifier|Tvj op|-40<br>-40||150<br>130|°C<br>°C|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00|-|6,00|Nm|
|Gewicht<br>Weight||G||180||g|



prepared�by:�NK date�of�publication:�2013-08-19 approved�by:�RS revision:�2.0 

6 

IGBT-Module IGBT-modules 

## TDB6HK180N16RR 

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ZthJC = f (t) IC =f(V CE)<br>VGE =15V<br>1 t UU_ Z T_U0=l thJC: Thyristor DC a a ee 200 T ___ vj = 25°C ye/<br>Rs  e e ee 180 Tvj = 125°C aie<br>Tvj = 150°C<br>PT TT TTT Ee -<br>a 160 J (if<br>EL 140 yt | ORY<br>0,1 AME MILT [i<br>PtFEE EHtt 120 / ve“y<br>PTarT TATTT eeETTTll 100 Pf] | ALE]i re<br>PALIN TENE ETT 80 eee eee<br>0,01<br>ANNIPettLINet LINetLN 60 | [ik<br>PT TTTETT<br>TPT TTT T T 40 Pf | fT<br>i:    1    2    3    4<br>c cm r τ ii[K/W]:   [s]:    0,018   0,01    0,099   0,02    0,096   0,05    0,087   0,1    20 LE<br>IM<br>0,001 | imtoo } = Lee 0 | |<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>t [s] VCE  [V]<br>Durchlasskennlinie der Diode, Brems-Chopper (typisch)<br>forward characteristic of Diode, Brake-Chopper (typical)<br>IF =f(V F)<br>100<br>Tvj = 25°C<br>90 Tvj = 125°C<br>E Tvj = 150°C o<br>80<br>70<br>60<br>50<br>40<br>30 Py<br>20<br>Sanne anne<br>10<br>P et<br>0 ee | |<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VF [V]<br> [K/W]thJC  [A]IC<br>Z<br> [A]<br>IF<br>**----- End of picture text -----**<br>


7 

## Technische�Information�/�Technical�Information 

> IGBT-ModuleIGBT-modules TDB6HK180N16RR 

## **Schaltplan�/�circuit_diagram_headline** 

**==> picture [86 x 38] intentionally omitted <==**

## **Vorläufige�Daten Preliminary�Data** 

## **Gehäuseabmessungen�/�package�outlines** 

**==> picture [232 x 51] intentionally omitted <==**

**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


prepared�by:�NK date�of�publication:�2013-08-19 approved�by:�RS revision:�2.0 

8 

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**----- Start of picture text -----**<br>
IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>


## TDB6HK180N16RR 

## **Nutzungsbedingungen** 

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**----- Start of picture text -----**<br>
application.<br>**----- End of picture text -----**<br>


9 



## Links

- [View this product on Novapart](https://novapart.co/products/TDB6HK180N16RRBPSA1/igbt-module-half-bridge-140-a-175-v-515-w-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/tdb6hk180n16rrbpsa1/igbt-module-1-2kv-140a-515w/dp/3775917)
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