# Triac, 800 V, 8 A, TO-220AB, 1.3 V, 60 A, 40 mA

![Product image](https://novapart.co/image/farnell:3106009/)

**URL**: https://novapart.co/products/T835T-8T/triac-800-v-8-a-to-220ab-13-60-40-ma
**SKU**: T835T-8T
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.3450
**Stock**: 25+
**Lead Time**: 120 days (indicative)

## Description

Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current IT(rms):8A; Triac Case Style:TO-220AB; Gate Trigger Current Max (QI), Igt:35mA; Gate Trigger Voltage Max Vgt:1.3V; Peak Gate P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | Snubberless |
| Triac Case Style | TO-220AB |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 40mA |
| On State Rms Current | 8A |
| Peak On State Voltage | 1.5V |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 60A |
| Peak Repetitive Off State Voltage | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3106009/)

## **T835T-8T** 

## 8 A Snubberless™ Triac 

− **Datasheet production data** 

**==> picture [82 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
A2<br>G<br>*<br>A1<br>A2<br>G<br>A2<br>A1<br>**----- End of picture text -----**<br>


## **Features** 

- Medium current Triac 

- High static and dynamic commutation 

- Three quadrants 

- ECOPACK[®] 2 compliant component 

## **Applications** 

- General purpose AC line load switching 

- Motor control circuits 

- Small home appliances 

- Lighting 

- Inrush current limiting circuits 

**TO-220AB (T835T-8T)** 

- Overvoltage crowbar protection 

## **Description** 

**Table 1. Device summary** 

|**Symbol**|**Value**|**Unit**|
|---|---|---|
|IT(rms)|8|A|
|VDRM, VRRM|800|V|
|VDSM, VRSM|900|V|
|IGT|35|mA|



Available in through-hole package, the T835T-8T Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber circuit when the limits defined in this datasheet are respected 

TM: Snubberless is a trademark of STMicroelectronics 

July 2014 

DocID024555 Rev 3 

1/9 

This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**T835T-8T** 

## **1 Characteristics** 

**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)** 

|**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)**|**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)gs (Tj = 25 °C unless otherwise stated)s (Tj = 25 °C unless otherwise stated)(Tj = 25 °C unless otherwise stated)Tj = 25 °C unless otherwise stated)j = 25 °C unless otherwise stated)**|**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)gs (Tj = 25 °C unless otherwise stated)s (Tj = 25 °C unless otherwise stated)(Tj = 25 °C unless otherwise stated)Tj = 25 °C unless otherwise stated)j = 25 °C unless otherwise stated)**|**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)gs (Tj = 25 °C unless otherwise stated)s (Tj = 25 °C unless otherwise stated)(Tj = 25 °C unless otherwise stated)Tj = 25 °C unless otherwise stated)j = 25 °C unless otherwise stated)**|**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)gs (Tj = 25 °C unless otherwise stated)s (Tj = 25 °C unless otherwise stated)(Tj = 25 °C unless otherwise stated)Tj = 25 °C unless otherwise stated)j = 25 °C unless otherwise stated)**<br>~~ee~~|**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)gs (Tj = 25 °C unless otherwise stated)s (Tj = 25 °C unless otherwise stated)(Tj = 25 °C unless otherwise stated)Tj = 25 °C unless otherwise stated)j = 25 °C unless otherwise stated)**<br>~~ee~~|
|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|||**Value**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~<br>~~ee~~|
|IT(rms)|On-state rms current (full sine wave)<br>~~pf~~||Tc= 131 °C<br>~~pf~~|8<br>~~ee ~~<br>~~pf~~|A<br> ~~ee~~|
|ITSM<br>~~ee~~<br>~~a~~|Non repetitive surge peak on-state<br>current (full cycle, Tjinitial = 25 °C)<br>~~pf~~<br>~~ee~~<br>|F = 50 Hz<br>~~pf~~<br>~~ee~~<br>~~a~~<br>|t = 20 ms<br>~~pf~~<br>~~ee~~<br>~~ee~~<br>|60<br>~~pf~~<br>~~ee~~<br>~~eee~~<br>|A<br>~~ee~~<br>|
|||F = 60 Hz<br>~~ee~~<br>~~a~~<br>|t = 16.7 ms<br>~~ee~~<br>~~ee~~<br>|63<br>~~ee~~<br>~~eee~~<br>||
|I²t<br>~~a~~|I²t value for fusing, Tjinitial = 25 °C<br>~~a~~<br>||tp= 10 ms<br>~~ee~~<br>|24<br>~~eee~~<br>|A²s<br>|
|VDRM,<br>VRRM<br>~~ae~~|Repetitive surge peak off-state voltage<br>~~ae~~||Tj= 150 °C<br>~~ae~~|600<br>~~ae~~|V<br>~~ae~~|
||||Tj= 125 °C<br>~~ae~~|800<br>~~ae~~||
|VDSM,<br>VRSM<br>~~a~~|Non repetitive surge peak off-state voltage<br>~~ee~~||tp= 10 ms<br>~~ee~~|900<br>~~ee~~|V<br>~~ee~~|
|dI/dt|Critical rate of rise of on-state<br>current IG= 2 x IGT, tr ≤100 ns|F = 100 Hz||100|A/µs|
|IGM<br>~~a~~|Peak gate current|tp= 20 µs|Tj= 150 °C|4|A|
|PG(AV)<br>~~a~~|Average gate power dissipation||Tj= 150 °C|1|W|
|Tstg<br>Tj|Storage junction temperature range<br>Operating junction temperature range|||- 40 to + 150<br>- 40 to + 150|°C|
|TL<br>~~a~~|Maximum lead temperature for soldering during 10 s|||260|°C|



**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)** 

|**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)**<br>**Symbol**<br>~~a~~|**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)(Tj = 25 °C, unless otherwise stated)Tj = 25 °C, unless otherwise stated)j = 25 °C, unless otherwise stated)**<br>**Test conditions**<br>|**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)(Tj = 25 °C, unless otherwise stated)Tj = 25 °C, unless otherwise stated)j = 25 °C, unless otherwise stated)**<br>**Quadrant**<br>|**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)(Tj = 25 °C, unless otherwise stated)Tj = 25 °C, unless otherwise stated)j = 25 °C, unless otherwise stated)**<br>|**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)(Tj = 25 °C, unless otherwise stated)Tj = 25 °C, unless otherwise stated)j = 25 °C, unless otherwise stated)**<br>**Value**<br>|**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)(Tj = 25 °C, unless otherwise stated)Tj = 25 °C, unless otherwise stated)j = 25 °C, unless otherwise stated)**<br>**Unit**<br>|
|---|---|---|---|---|---|
|IGT<br>(1)<br>~~ee~~|VD= 12 V, RL= 30Ω<br>~~ee~~|I - II - III<br>~~ee~~|Min.<br>~~ee~~|1.75<br>~~ee~~|mA<br>~~ee~~|
||||Max.<br>~~ee~~<br>~~|~~|35<br>~~ee~~<br>~~|~~||
|VGT<br>~~a~~|VD= 12 V, RL= 30Ω|I - II - III|Max.|1.3|V|
|VGD<br>~~a~~|VD= VDRM, RL= 3.3 kΩ,Tj= 150 °C|I - II - III|Min.|0.2|V|
|IH<br>(1)<br>~~a~~|IT= 500 mA<br>||Max.<br>|40<br>|mA<br>|
|IL<br>~~Pe~~<br>~~——————~~|IG= 1.2 IGT<br>~~Pe~~<br>~~——————~~|I - III<br>~~Pe~~<br>|Max.<br>~~Pe~~<br>~~ee~~<br>|60<br>~~Pe~~<br>~~ee~~<br>|mA<br>~~Pe~~<br>~~ee~~<br>|
|||II<br>~~Pe~~<br>~~ee~~<br>|Max.<br>~~Pe~~<br>~~ee~~<br>~~ee~~<br>|65<br>~~Pe~~<br>~~ee~~<br>~~ee~~<br>|mA<br>~~Pe~~<br>~~ee~~<br>~~ee~~<br>|
|dV/dt<br>(1)<br>~~——————~~|VD= 536 V, gate open<br>~~——————~~|Tj= 125 °C<br>~~eS~~|Min.<br>~~ee~~<br>~~eS~~|2000<br>~~ee~~<br>~~eS~~|V/µs<br>~~ee~~<br>~~eS~~|
||VD= 402 V, gate open<br>~~—————— ~~<br>~~es~~|Tj= 150 °C<br> ~~eS~~<br>~~es~~||1000<br>~~ee~~<br>~~eS~~|V/µs<br>~~ee~~<br>~~eS~~|
|(dI/dt)c<br>(1)<br>~~——————~~<br>~~es~~|Without snubber (dV/dt)c≥20 V/µs)<br>~~—————— ~~<br>~~es~~|Tj= 125 °C<br> <br>~~es~~<br>~~a~~|Min.<br>~~ee ~~<br><br>~~es~~<br>~~ee~~|8<br> ~~ee ~~<br><br>~~es~~<br>~~ee~~|A/ms<br> ~~ee~~<br><br>~~es~~|
|||Tj= 150 °C<br>~~es~~<br>~~a~~||4<br>~~es~~<br>~~ee~~||



2/9 

DocID024555 Rev 3 

**Characteristics** 

**T835T-8T** 

**Table 4. Static Characteristics** 

||**Table 4. Static Characteristics**|**Table 4. Static Characteristics**|**Table 4. Static Characteristics**|||
|---|---|---|---|---|---|
|**Symbol**|**Test conditions**|||**Value**|**Unit**|
|VT<br>(1)|ITM= 11.3 A, tp= 380 µs|Tj= 25 °C|Max.|1.55|V|
|Vt0<br>(1)|Threshold voltage|Tj= 150 °C|Max.|0.85|V|
|Rd<br>(1)|Dynamic resistance|Tj= 150 °C|Max.|57|mΩ|
|IDRM<br>IRRM|VDRM= VRRM= 800 V|Tj= 25 °C|Max.|5<br>0.8<br>2.4|µA|
|||Tj= 125 °C|||mA|
||VDRM= VRRM= 600 V|Tj= 150 °C|Max.|||



1. For both polarities of A2 referenced to A1 

**Table 5. Thermal resistance** 

||**Table 5. Thermal resistance**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rth(j-c)|Junction to case (AC)|1.9<br>°C/W|°C/W|
|Rth(j-a)|Junction to ambient|60<br>°C/W|°C/W|



**Figure 1. Maximum power dissipation versus Figure 2. On-state rms current versus case on-state rms current (full cycle) temperature (full cycle)** 

**==> picture [444 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 P(W) 9 IT(RMS)(A)<br>α =180° PP 8 =180°<br>A) Cee<br>8<br>7<br>REE<br>4) 6 FERRE<br>6 =<br>5<br>ies ee<br>4<br>4 i a le<br>3<br>ear | HE<br>2 an 180° 2 eee<br>0 a T I T(RMS) (A) aeel y) 10 oeCEPT TC(°C)<br>PPP rrr sr<br>0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 3. On-state rms current versus ambient temperature (free air convection)** 

**Figure 4. Relative variation of thermal impedance versus pulse duration** 

**==> picture [444 x 139] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.0 IT(RMS)(A) 1.0E+00 K = [Zth / Rth]<br>2.5 a <i ee α  = 180° Ee Zth(j eee -c) i<br>2.0 Zth(j-a)<br>1.5 S s Psee || 1.0E-01 CHAFEE|| HE|<br>1.0<br>0.5 SEES | eR ECAH EHH Hl<br>ee ee ee a<br>0.0 ERE EE Ta(°C) EER 1.0E-02 UTE EUNIEAIML T tp (s)<br>0 25 50 75 100 125 150 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03<br>**----- End of picture text -----**<br>


DocID024555 Rev 3 3/9 ~~Sc~~ 

**Characteristics** 

**T835T-8T** 

**Figure 5. On-state characteristics (maximum values)** 

**Figure 6. Surge peak on-state current versus number of cycles** 

**==> picture [445 x 337] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 ITM(A) 70 ITSM(A)<br>60<br>= SSSSSS=s | COL"<br>t = 20 ms<br>50<br>BREE RVtodT = 57 m = 0.85 Vj max : | 40 Comm TNon repetitivej initial=25 °C mil Soll One cycle<br>10<br>Cer) | 30<br>Tj = 150 °C Pp | 20 mo Sal<br>SSS SSeSSSS | COMM SAMI<br>Tj = 25 °C 10<br>SHHFESS CIE Repetitive Tips Seu<br>VTM(V) 0 TC= 131 °C Number of cycles<br>1 EEA | Esc<br>1 10 100 1000<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>Figure 7. Non repetitive surge peak on-state  Figure 8. Relative variation of gate trigger<br>current and corresponding values of I [2] t current and gate voltage versus junction<br>temperature (typical values)<br>1000 ITSM(A), I²t (A²s dI/dt limitation: 100 A/µs ) Tj initial=25  ° C 2.0 IGT[T j] / IGT[Tj = 25 °C], VGT[T j] / VGT[Tj = 25 °C Typical values ]<br>IGT Q1-Q2<br>na ITSM 1.5 IGT Q3<br>100 1.0 VGT<br>AINE TIPS) | Ss| x YAY<br>I²t 0.5<br>Hise | eS<br>10 Cer Sinusoidal pulse with width tp<10 ms tp(ms) 0.0 PeeJ Tj(°C)<br>0.01 0.10 1.00 10.00 -50 -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 9. Relative variation of static dV/dt immunity versus junction temperature (typical values)** 

**Figure 10. Relative variation of holding and latching current versus junction temperature (typical values)** 

**==> picture [444 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 dV/dt [Tj] / dV/dt [T j=150 °C] 2.0 IH, IL[T ] / Ij H, IL[Tj = 25 °C]<br>TN] VD=VR=402V<br>(dV/dt) > 5KV/µs<br>4 1.5 IL<br>Poo EP) [<br>3 IH<br>1.0<br>2 EERE SH) LIST<br>tee ANE 0.5 SPSS<br>1<br>Tj(°C) T (°C)j<br>0 0.0<br>25 HEHE 50 75 100 125 150 | -50 CCC -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


4/9 DocID024555 Rev 3 ~~2~~ 

**Characteristics** 

**T835T-8T** 

**Figure 11. Relative variation of critical rate of decrease of main current (di/dt)c versus reapplied (dV/dt)c (typical values)** 

**Figure 12. Relative variation of critical rate of decrease of main current (di/dt)c versus junction temperature (typical values)** 

**==> picture [444 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 (dI/dt)c [(dV/dt)] / Specified (dI/dt)c 8 (dl / dt)c [T ] / (dl / dt)j c [Tj = 150 °C]<br>Tj =150 °C<br>A 7 roy oT [fo fo yy<br>4<br>AT 6 yey<br>A EE TP PP | NO<br>3 A 5 PTSD IIT<br>a 4 ~<br>2 a P| Tne EL LL<br>3<br>NE | 2 e e.e.<br>1<br>ee 1 > SS<br>0 PA en (dV/dt)c (V/µs) I 0 Ft tt | | ft ftoo T (°C)j<br>0.1 1.0 10.0 100.0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values)** 

**==> picture [214 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
IDRM   RRM, I @ [T ]; Vj DRM, VRRM] / IDRM   RRM , I [@ [] Tjmax []][*]<br>1.0E+00<br>V DRM =V RRM =800 V<br>SSS aS<br>1.0E-01 i<br>VDRM=VRRM=600 V<br>1.0E-02 ne ae Nee<br>VDRM=VRRM=400 V<br>ea<br>ao ee Se|<br>1.0E-03 *IDRM, IRRM @:<br>[Tjmax = 125 °C; 800 V]<br>1.0E-04 AFT [Tjmax = 150 °C; 600 V] r= T (°C) j<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


DocID024555 Rev 3 5/9 ~~CS7~~ 

**Package information** 

**T835T-8T** 

## **2 Package information** 

- Epoxy meets UL94, V0 

- Lead-free package 

- Recommended torque: 0.4 to 0.6 N·m 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

## **Figure 14. TO-220AB dimension definitions** 

**==> picture [195 x 209] intentionally omitted <==**

**----- Start of picture text -----**<br>
E A<br>Resin gate ∅ P F<br>0.5 mm max.<br>protrusion [(1)] ore a Q<br>H1<br>D D1<br>L20 L30<br>D 4<br>b1 L1 J1<br>L<br>b<br>e Resin gate c<br>0.5 mm max.<br>protrusion [(1)]<br>e1<br>(1) Resin gate position accepted in each of the two<br>position shown as well as the symmetrical opposites<br>**----- End of picture text -----**<br>


6/9 

DocID024555 Rev 3 

**T835T-8T** 

**Package information** 

**Table 6. TO-220AB dimension values** 

||**Table 6. TO-220AB dimension values**|**Table 6. TO-220AB dimension values**|**Table 6. TO-220AB dimension values**|**Table 6. TO-220AB dimension values**|
|---|---|---|---|---|
|**Ref.**<br>~~a~~|**Dimensions**<br>~~a~~||||
||**Millimeters**<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~es~~||**Inches**<br>~~a~~<br>~~ee~~<br>~~ee~~||
||**Min.**<br>~~ee~~<br>~~a~~|**Max.**<br>~~ee~~<br>~~es~~|**Min.**<br>~~ee~~<br>~~ee~~|**Max.**<br>~~ee~~<br>~~ee~~|
|A<br>~~a~~<br>~~es~~|4.40<br>~~a~~|4.60<br>~~es~~|0.17<br>~~ee~~|0.18<br>~~ee~~|
|b<br>~~a~~<br>~~es~~<br>~~es~~|0.61<br>~~a~~|0.88<br>~~es~~|0.024<br>~~ee~~|0.035<br>~~ee~~|
|b1<br>~~es~~<br>~~es~~<br>~~es~~|1.14|1.70|0.045|0.067|
|c<br>~~es~~<br>~~es~~|0.48|0.70|0.019|0.027|
|D<br>~~es~~<br>~~|~~|15.25<br>~~po~~|15.75<br>~~po~~|0.60<br>~~po~~|0.62<br>~~po~~|
|D1<br>~~|~~|1.27 typ.<br>~~po~~||0.05 typ.<br>~~po~~||
|E<br>~~| ~~<br>~~a~~|10<br> ~~po~~<br>|10.40<br>~~po~~<br>|0.39<br>~~po~~<br>|0.41<br>~~po~~<br>|
|e<br>~~Ce~~<br>~~es~~|2.40<br>~~Ce~~|2.70<br>~~Ce~~|0.094<br>~~Ce~~|0.106<br>~~Ce~~|
|e1<br>~~es~~<br>~~es~~|4.95|5.15|0.19|0.20|
|F<br>~~es~~<br>~~es~~<br>~~es~~|1.23|1.32|0.048|0.052|
|H1<br>~~es~~<br>~~es~~<br>~~es~~|6.20|6.60|0.24|0.26|
|J1<br>~~es~~<br>~~es~~<br>~~es~~|2.40|2.72|0.094|0.107|
|L<br>~~es~~<br>~~es~~|13|14|0.51|0.55|
|L1<br>~~es~~<br>~~se~~<br>~~es~~|3.50<br>~~se~~|3.93<br>~~se~~|0.137<br>~~se~~|0.154<br>~~se~~|
|L20<br>~~es~~<br>~~es~~|16.40 typ.||0.64 typ.||
|L30<br>~~es~~<br>~~es~~<br>~~es~~|28.90 typ.||1.13 typ.||
|∅P<br>~~es~~<br>~~es~~<br>~~es~~|3.75|3.85|0.147|0.151|
|Q<br>~~es~~<br>~~es~~|2.65|2.95|0.104|0.116|



DocID024555 Rev 3 

7/9 

**Ordering information** 

**T835T-8T** 

**3 Ordering information Figure 15. Ordering information scheme** T 8      35 T -    8 T **Triac Current** 8 = 8 A **Gate sensitivity** 35 = 35 mA **Specific application** T = Increased (dI/dt)c and dV/dt producing reduced ITSM **Voltage (VDRM, VRRM)** 8 = 800 V **Package** T = TO-220AB =] **Table 7. Ordering information Order code Marking Package Weight Base qty Delivery mode** T835T-8T T835T-8T TO-220AB 2.0 g 50 Tube **4 Revision history Table 8. Document revision history Date Revision Changes** 05-Aug-2013 1 Initial release. 01-Jul-2014 2 Updated _Table 2_ . 28-Jul-2014 3 Updated _Table 5_ . ~~=~~ 8/9 DocID024555 Rev 3 

**T835T-8T** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

DocID024555 Rev 3 

9/9 



## Links

- [View this product on Novapart](https://novapart.co/products/T835T-8T/triac-800-v-8-a-to-220ab-13-60-40-ma)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/t835t-8t/triac-8a-800v-to-220ab/dp/3106009)
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