# Triac, 800 V, 8 A, TO-220AB, 1.3 V, 60 A, 40 mA

![Product image](https://novapart.co/image/farnell:3106008/)

**URL**: https://novapart.co/products/T835T-8I/triac-800-v-8-a-to-220ab-13-60-40-ma
**SKU**: T835T-8I
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.3220
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Description

Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current IT(rms):8A; Triac Case Style:TO-220AB; Gate Trigger Current Max (QI), Igt:35mA; Gate Trigger Voltage Max Vgt:1.3V; Peak Gate P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | Snubberless |
| Triac Case Style | TO-220AB |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 40mA |
| On State Rms Current | 8A |
| Peak On State Voltage | 1.6V |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 60A |
| Peak Repetitive Off State Voltage | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3106008/)

## **T835T-8I** 

## 8 A Snubberless™ Triac 

Datasheet - production data 

## **Description** 

**==> picture [124 x 23] intentionally omitted <==**

**----- Start of picture text -----**<br>
A1A2<br>TO220AB insulated<br>G<br>**----- End of picture text -----**<br>


## **Features** 

- High static dV/dt 

- High dynamic commutation 

- 150 °C maximum Tj 

- Three quadrants 

- Built-in ceramic for tab insulation 

- Compliance to UL1557 standard (ref : E81734) 

- ECOPACK[®] 2 compliant component 

- Complies with UL94,V0 

- Surge capability VDSM, VRSM = 900 V 

## **Benefits** 

- Device is less likely to have false turn-on thanks to high dV/dt 

- Better turn-off in high temperature environments thanks to (dI/dt)c 

- Increase of thermal margin due to extended working Tj up to 150 °C 

- Better thermal resistance due to the ceramic inside the package 

Available in through-hole package, the T835T-8I Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber RC circuit when the limits defined are respected. 

TO-220AB insulated provides tab insulation, UL1557 certified, rated at 2.5 kV RMS and UL-94, V0 resin compliance. 

Package environmentally friendly ECOPACK[®] 2 graded (RoHS and Halogen Free compliance). 

Snubberless™ is a trademark of STMicroelectronics. 

**Figure 1: Functional diagram** 

|||A2|A2|
|---|---|---|---|
|A2: Anode2<br>A1: Anode1<br>G : Gate|G|~~.~~|~~.~~|
|||A1||



|**Symbol**|**Value**|**Unit**|
|---|---|---|
|IT(RMS)|8|A|
|VDRM/VRRM|800|V|
|VDSM/VRSM|900|V|
|IGT|35|mA|



## **Applications** 

- General purpose AC line load switching 

- Motor control circuits 

- Home appliances 

- Heating 

- Lighting 

- Inrush current limiting circuits 

- Overvoltage crowbar protection 

This is information on a product in full production. 

November 2017 DocID030985 Rev 2 

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_www.st.com_ 

**Characteristics** 

**T835T-8I** 

## **1 Characteristics** 

**Table 2: Absolute maximum ratings (limiting values)** 

|**Symbol**|**Parameter**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IT(RMS)|RMS on-state current (full sine wave)||Tc= 118 °C|8|A|
|ITSM|Non repetitive surge peak on-state current,<br>Tjinitial = 25 °C||tp= 16.7 ms|63|A|
||||tp= 20 ms|60||
|I2t|I2t value for fusing, tp= 10 ms||Tjinitial = 25 °C|24|A2s|
|dl/dt|Critical rate of rise of on-state<br>current, IG= 2 x IGT, tr ≤ 100 ns|Tj= 150 °C|f = 100 Hz|100|A/µs|
|VDRM/VRRM|Repetitive peak off-state voltage||Tj= 150 °C|600|V|
||||Tj= 125 °C|800|V|
|VDSM/VRSM|Non Repetitivepeak off-state voltage||tp= 10 ms|900|V|
|IGM|Peakgate current|tp= 20µs|Tj= 150 °C|4|A|
|PG(AV)|Averagegatepower dissipation||Tj= 150 °C|1|W|
|Tstg|Storagejunction temperature range|||-40 to +150|°C|
|Tj|Operating junction temperature range|||-40 to +150|°C|
|TL|Maximum lead temperature for solderingduring||10 s|260|°C|
|Vins|Insulation RMS voltage, 1 minute, UL1557 certified (E81734)|||2.5|kV|



**Table 3: Electrical characteristics (Tj = 25 °C, unless otherwise specified)** 

|**Symbol**|**Test Conditions**|||**Value**|**Unit**|
|---|---|---|---|---|---|
|IGT_(1)_|VD= 12 V, RL= 30 Ω|I - II - III|Min.|1.75|mA|
||VD= 12 V, RL= 30 Ω|I - II - III|Max.|35|mA|
|VGT|VD= 12 V, RL= 30 Ω|I - II - III|Max.|1.3|V|
|VGD|VD= VDRM, RL= 3.3 kΩ, Tj= 150 °C|I - II - III|Min.|0.2|V|
|IL|IG= 1.2 x IGT|I - III|Max.|60|mA|
|||II|Max.|70|mA|
|IH|IT= 500 mA,gate open||Max.|40|mA|
|dV/dt|VD= 536 V,gate open|Tj= 125 °C|Min.|2000|V/µs|
||VD= 402 V,gate open|Tj= 150 °C||1000|V/µs|
|(dl/dt)c|Without snubber, (dV/dt)c > 20 V/µs|Tj= 125 °C|Min.|8|A/ms|
|||Tj= 150 °C||4|A/ms|



## **Notes:** 

(1)For both polarities of A2 referenced to A1. 

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**Characteristics** 

**T835T-8I** 

## **Table 4: Static characteristics** 

|**Symbol**|**Test conditions**|**Tj**||**Value**|**Unit**|
|---|---|---|---|---|---|
|VTM_(1)_|IT= 11.3 A, tp= 380 µs|25 °C|Max.|1.60|V|
|VTO|Threshold on-state voltage|150 °C|Max.|0.87|V|
|RD|Dynamic resistance|150 °C|Max.|80|mΩ|
|IDRM/IRRM|VDRM= VRRM= 800 V|25 °C|Max.|5|µA|
|||125°C||1.0|mA|
||VDRM= VRRM= 600 V|150 °C|Max.|2.5|mA|



## **Notes:** 

(1)For both polarities of A2 referenced to A1. 

## **Table 5: Thermal resistance** 

|**Symbol**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|
|Rth(j-c)|Junction to case (AC)|Max.|2.8|°C/W|
|Rth(j-a)|Junction to ambient|Typ.|60||



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**Characteristics** 

**T835T-8I** 

## **1.1 Characteristics (curves)** 

**==> picture [456 x 181] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 2: Maximum power dissipation versus on-<br>Figure 3: On-state RMS current versus case<br>state RMS current<br>temperature<br>P(W) IT(RMS)(A)<br>12 10<br>α = 180° 9 α = 180 °<br>10<br>8<br>7<br>8<br>6<br>6 5<br>4<br>4 3<br>180° 2<br>2<br>IT(RMS)(A) 1 Tc(°C)<br>0<br>0<br>0 25 50 75 100 125 150<br>0 1 2 3 4 5 6 7 8<br>**----- End of picture text -----**<br>


**==> picture [455 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 4: On-state RMS current versus ambient<br>Figure 5: Relative variation of thermal impedance<br>temperature (free air convection)<br>versus pulse duration<br>IT(RMS)(A) K = [Zth/Rth]<br>3.0 1.0E+00<br>α = 180 ° Zth(j-c)<br>2.5 Z th(j-a)<br>2.0<br>1.5 1.0E-01<br>1.0<br>0.5<br>Ta(°C)<br>0.0 tp(s)<br>1.0E-02<br>0 25 50 75 100 125 150<br>1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03<br>**----- End of picture text -----**<br>


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**Characteristics** 

**T835T-8I** 

**==> picture [447 x 204] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6: Relative variation of gate trigger voltage  Figure 7: Relative variation of holding current and<br>and current versus junction temperature  latching current versus junction temperature<br> (typical values)  (typical values)<br>IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C] IH,IL [Tj] / IH,IL [Tj = 25 °C]<br>2.0<br>3.0<br>IGT Q3<br>2.5<br>1.5<br>2.0<br>I GT Q1-Q2<br>1.5 1.0<br>IL<br>1.0 VGT Q1-Q2-Q3<br>0.5<br>0.5<br>I H<br>Tj (°C) Tj (°C)<br>0.0 0.0<br>-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125<br>**----- End of picture text -----**<br>


**Figure 6: Relative variation of gate trigger voltage and current versus junction temperature (typical values)** 

**==> picture [462 x 394] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8: Surge peak on-state current versus  Figure 9: Non repetitive surge peak on-state<br>number of cycles  current for a sinusoidal pulse with width tp < 10 ms<br>ITSM(A) ITSM(A)<br>1000<br>70 dI/dt100A/µslimitation: T j initial=25°C<br>60 t=20ms<br>50 Non repetitive� O ne c ycle<br>Tj initial = 25 °C<br>40 100 I TSM<br>30<br>Repetitive�<br>20 Tc = 118°C<br>10<br>Number of cycles 10 t p (ms)<br>0<br>0.01 0.10 1.00 10.00<br>1 10 100 1000<br>Figure 10: On-state characteristics  Figure 11: Relative variation of critical rate of<br> (maximum values)  decrease of main current versus junction<br>ITM(A) temperature<br>100 (dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]<br>14<br>Tj max. 13<br>Vto = 0.87 V<br>Rd = 80 mΩ 12<br>11<br>10<br>9<br>10 Tj = 25 °C 8<br>Tj = 150 °C 7<br>6<br>5<br>4<br>3<br>2<br>1 VTM(V) 1 Tj(°C)<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


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**Characteristics** 

**T835T-8I** 

**==> picture [453 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13: Relative variation of leakage current<br>Figure 12: Relative variation of static dV/dt<br>versus junction temperature for different values of<br>immunity versus junction temperature<br>blocking voltage<br>dV/dt [Tj] / dV/dt [Tj = 150 °C] IDRM/IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,VDRM/VRRM]*<br>6<br>1.0E+00<br>VD = VR = 402 V<br>5<br>4 VDRM = VRRM = 800 V<br>1.0E-01<br>3<br>VDRM = VRRM = 600 V<br>2<br>1.0E-02<br>1<br>Tj(°C) *[Tj max = 125 °C; VDRM, VRRM = 800 V]<br>0 [Tj max = 150 °C; VDRM, VRRM = 600 V] Tj(°C)<br>25 50 75 100 125 150 1.0E-03<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


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**Package** information 

**T835T-8I** 

## **2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

- ECOPACK[®] 2 (Lead-free plating and Halogen free package compliance) 

- Lead-free package leads finishing 

- Halogen-free molding compound resin meets UL94 standard level V0. 

- Recommended torque (for through-hole package): 0.4 to 0.6 N·m 

## **2.1 TO-220AB Insulated package information** 

**Figure 14: TO-220AB Insulated package outline** 

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**Package** information 

**T835T-8I** 

**Table 6: TO-220AB Insulated package mechanical data** 

|**Ref.**|||**Dimensions**|**Dimensions**|||
|---|---|---|---|---|---|---|
|||**Millimeters**|||**Inches****_(1)_**||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|15.20||15.90|0.5984||0.6260|
|a1||3.75|||0.1476||
|a2|13.00||14.00|0.5118||0.5512|
|B|10.00||10.40|0.3937||0.4094|
|b1|0.61||0.88|0.0240||0.0346|
|b2|1.23||1.32|0.0484||0.0520|
|C|4.40||4.60|0.1732||0.1811|
|c1|0.49||0.70|0.0193||0.0276|
|c2|2.40||2.72|0.0945||0.1071|
|e|2.40||2.70|0.0945||0.1063|
|F|6.20||6.60|0.2441||0.2598|
|I|3.73||3.88|0.1469||0.1528|
|L|2.65||2.95|0.1043||0.1161|
|I2|1.14||1.70|0.0449||0.0669|
|I3|1.14||1.70|0.0449||0.0669|
|I4|15.80|16.40|16.80|0.6220|0.6457|0.6614|
|M||2.6|||0.1024||



## **Notes:** 

(1)Inch dimensions are for reference only. 

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**Ordering** information 

**T835T-8I** 

## **3 Ordering information** 

**Figure 15: Ordering information scheme** 

**==> picture [416 x 265] intentionally omitted <==**

**----- Start of picture text -----**<br>
T 8 35 T - 8 I<br>Series<br>T = Triac<br>RMS current<br>8 = 8 A<br>IGT current<br>35 = 35 mA<br>Specific application<br>T = increased (dl/dt) and dV/dt producing reduced ITSM<br>Voltage<br>8 = 800 V<br>Package<br>I = TO-220AB insulated tab<br>Table 7: Ordering information<br>Order code  Marking  Package  Weight  Base qty.  Delivery mode<br>T835T-8I  T835T-8I  TO-220AB insulated  2.3 g  50  Tube<br>**----- End of picture text -----**<br>


## **4 Revision history** 

||**Table 8: Document revision history**|**Table 8: Document revision history**|
|---|---|---|
|**Date**|**Revision**|**Changes**|
|17-Oct-2017|1|Initial release.|
|06-Nov-2017|2|Updated_Table 4: "Static characteristics"._|



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**T835T-8I** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

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