# Triac, 800 V, 8 A, TO-263 (D2PAK), 1.3 V, 63 A, 40 mA

![Product image](https://novapart.co/image/farnell:2980872/)

**URL**: https://novapart.co/products/T835T-8G-TR/triac-800-v-8-a-to-263-d2pak-13-63-40-ma
**SKU**: T835T-8G-TR
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.2710
**Stock**: 100+
**Lead Time**: 120 days (indicative)

## Description

Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current IT(rms):8A; Triac Case Style:TO-263; Gate Trigger Current Max (QI), Igt:35mA; Gate Trigger Voltage Max Vgt:1.3V; Peak Gate Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | Snubberless |
| Triac Case Style | TO-263 (D2PAK) |
| Thyristor Mounting | Surface Mount |
| Holding Current Max | 40mA |
| On State Rms Current | 8A |
| Peak On State Voltage | 1.6V |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 63A |
| Peak Repetitive Off State Voltage | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2980872/)

**T835T-8G** 

Datasheet 

8 A 800 V D[2] PAK Snubberless™ Triac 

## **Features** 

**==> picture [61 x 80] intentionally omitted <==**

**----- Start of picture text -----**<br>
A2<br>A2<br>A1<br>G<br>D²PAK<br>**----- End of picture text -----**<br>


- High static dV/dt 

- High dynamic turn-off commutation (dl/dt)c 

- 150 °C maximum junction temperature 

- Three quadrants 

- Surge capability VDSM, VRSM = 900 V 

- Benefits: 

   - High immunity to false turn-on thanks to high static dV/dt 

**==> picture [91 x 65] intentionally omitted <==**

**----- Start of picture text -----**<br>
A2<br>A2: Anode2<br>A1: Anode1<br>G: Gate<br>G<br>A1<br>**----- End of picture text -----**<br>


   - Better turn-off in high temperature environments thanks to (dI/dt)c 

- 

- Increase of thermal margin due to extended working Tj up to 150 °C 

   - Good thermal resistance due to non-insulated tab. 

- 

## **Applications** 

- General purpose AC line load switching 

- Motor control circuits 

- Home appliances 

- Heating 

- Lighting 

- Inrush current limiting circuits 

- Overvoltage crowbar protection 

## **Product status link** ~~ea~~ T835T-8G 

|**Product status link**<br>~~ea~~|**Product status link**<br>~~ea~~|
|---|---|
|T835T-8G||
|**Product summary**<br>~~Sea~~||
|**IT(RMS)**|8 A|
|**VDRM/VRRM**|800 V|
|**VDSM/VRSM**|900 V|
|**IGT**|35 mA|



## **Description** 

Available in SMD, the T835T-8G Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. The T835T-8G can be used without a snubber RC circuit when the limits defined are respected. 

D[2] PAK package is UL-94,V0 flammability resin compliance. 

Package environmentally friendly Ecopack[®] 2 graded (RoHS and Halogen Free compliance). 

Snubberless™ is a trademark of STMicroelectronics. 

**DS12531** - **Rev 3** - **July 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**T835T-8G Characteristics** 

**1 Characteristics** 

**Table 1. Absolute maximum ratings (limiting values)** 

|**Symbol**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|
|IT(RMS)|RMS on-state current (full sine wave)|Tc= 128 °C|8|A|
|ITSM|Non repetitive surge peak on-state current (full cycle, Tjinitial<br>= 25 °C|t = 16.7 ms|63|A|
|||t = 20 ms|60||
|I2t|I2t value for fusing|tp= 10 ms|24|A2s|
|dl/dt|Critical rate of rise of on-state current, IG= 2 x IGT, tr ≤ 100 ns|Tjinitial = 150 °C, f = 100 Hz|100|A/µs|
|VDRM/VRRM|Repetitive peak off-state voltage (50-60 Hz)|Tj= 125 °C|800|V|
|||Tj= 150 °C|600|V|
|VDSM/VRSM|Non Repetitive peak off-state voltage|tp= 10 ms, Tj= 25 °C|900|V|
|IGM|Peak gate current|tp= 20 µs, Tj= 150 °C|4|A|
|VGM|Peak Gate Voltage||5|V|
|PG(AV)|Average gate power dissipation|Tj= 150 °C|1|W|
|Tstg|Storage junction temperature range||-40 to +150|°C|
|Tj|Operating junction temperature range||-40 to +150|°C|



**Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)** 

|**Symbol**|**Test conditions**|**Test conditions**|**Quadrants; Tj**||**Value**|**Unit**|
|---|---|---|---|---|---|---|
|IGT|VD= 12 V, RL= 30 Ω||I - II - III|Min.|1.75|mA|
||VD= 12 V, RL= 30 Ω||I - II - III|Max.|35|mA|
|VGT|VD= 12 V, RL= 33 Ω||I - II - III|Max.|1.3|V|
|VGD|VD= 600 V, RL= 3.3 kΩ|Tj= 150 °C|I - II - III|Min.|0.2|V|
|IL|IG= 1.2 x IGT||I - III|Max.|60|mA|
||IG= 1.2 x IGT||II|Max.|70|mA|
|IH (1)|IT= 500 mA, gate open|||Max.|40|mA|
|dV/dt(1)|VD= 536 V, gate open||Tj= 125 °C|Min.|2000|V/µs|
||VD= 402 V, gate open||Tj= 150 °C|Min.|1000|V/µs|
|(dl/dt)c(1)|Without snubber, (dV/dt)c > 20 V/µs||Tj= 125 °C|Min.|8|A/ms|
||||Tj= 150 °C|Min.|4|A/ms|



_1. For both polarities of A2 referenced to A1._ 

**DS12531** - **Rev 3** 

**page 2/11** 

**T835T-8G Characteristics** 

## **Table 3. Static characteristics** 

|**Symbol**|**Test conditions**|**Tj**||**Value**|**Unit**|
|---|---|---|---|---|---|
|VTM (1)|IT= 11.3 A, tp= 380 µs|25 °C|Max.|1.6|V|
|VTO(1)|Threshold on-state voltage|150 °C|Max.|0.87|V|
|RD(1)|Dynamic resistance|150 °C|Max.|80|mΩ|
|IDRM/IRRM|VDRM= VRRM= 800 V|25 °C|Max.|5|µA|
|||125°C||1.0|mA|
||VDRM= VRRM= 600 V|150 °C|Max.|2.5|mA|



_1. For both polarities of A2 referenced to A1._ 

## **Table 4. Thermal resistance** 

|**Symbol**|**Parameter**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|---|
|Rth(j-c)|Junction to case (AC)|D²PAK|Max.|1.9|°C/W|



**DS12531** - **Rev 3** 

**page 3/11** 

**T835T-8G Characteristics (curves)** 

## **1.2 Characteristics (curves)** 

**Figure 1. Maximum power dissipation versus on-state RMS current** 

**==> picture [166 x 113] intentionally omitted <==**

**----- Start of picture text -----**<br>
P(W)<br>12<br>α = 180°<br>10<br>8<br>6<br>4<br>2 180°<br>IT(RMS)(A)<br>0<br>0 1 2 3 4 5 6 7 8<br>**----- End of picture text -----**<br>


**Figure 2. On-state RMS current versus case temperature** 

**==> picture [162 x 108] intentionally omitted <==**

**----- Start of picture text -----**<br>
IT(RMS)(A)<br>9<br>8<br>7 α = 180°<br>6<br>5<br>4<br>3<br>2<br>1 Tc( ° C)<br>0<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**==> picture [513 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3. On-state RMS current versus ambient Figure 4. Relative variation of thermal impedance versus<br>temperature (free air convection) pulse duration<br>IT(RMS)(A) K = [Zth/Rth]<br>3.5 1.0E+00<br>3.0 α = 180° Zth(j-c)<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>Ta( ° C)<br>0.0 tp(s)<br>0 25 50 75 100 125 150 1.0E-01<br>1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03<br>**----- End of picture text -----**<br>


**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6. Relative variation of holding current and<br>Figure 5. Relative variation of gate trigger voltage and<br>latching current versus junction temperature (typical<br>current versus junction temperature (typical values)<br>values)<br>3.0 IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C] IH,IL [Tj] / IH,IL [Tj = 25 °C]<br>2.0<br>2.5<br>IGT Q3<br>2.0 1.5<br>1.5 I GT  Q1-Q2<br>1.0<br>1.0 VGT Q1-Q2-Q3 IL<br>0.5 0.5<br>0.0 T j  (°C) Tj (°C) I H<br>-50 -25 0 25 50 75 100 125 150 0.0<br>-50 -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**DS12531** - **Rev 3** 

**page 4/11** 

**T835T-8G Characteristics (curves)** 

**Figure 7. Surge peak on-state current versus number of cycles** 

**==> picture [168 x 112] intentionally omitted <==**

**----- Start of picture text -----**<br>
ITSM(A)<br>70<br>60<br>t=20ms<br>50 Non repetitive  One cycle<br> Tj initial = 25 °C<br>40<br>30<br>Repetitive<br>20  T c  = 128°C<br>10<br>0 Number of cycles<br>1 10 100 1000<br>**----- End of picture text -----**<br>


**Figure 8. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms** 

**==> picture [169 x 113] intentionally omitted <==**

**----- Start of picture text -----**<br>
ITSM(A)<br>1000 Tj initial=25 ° C<br>dI/dt limitation:<br>100A/µs<br>100 ITSM<br>t p (ms)<br>10<br>0.01 0.10 1.00 10.00<br>**----- End of picture text -----**<br>


**Figure 9. On-state characteristics (maximum values)** 

**==> picture [168 x 115] intentionally omitted <==**

**----- Start of picture text -----**<br>
ITM(A)<br>100<br>Tj max.<br>Vto = 0.87 V<br>R d  = 80 mΩ<br>Tj = 25 °C<br>10<br>T j  = 150 °C<br>VTM(V)<br>1<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0<br>**----- End of picture text -----**<br>


**Figure 10. Relative variation of critical rate of decrease of main current versus junction temperature** 

**==> picture [162 x 109] intentionally omitted <==**

**----- Start of picture text -----**<br>
(dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]<br>14<br>13<br>12<br>11<br>10<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1 Tj(°C)<br>0<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 12. Relative variation of leakage current versus<br>Figure 11. Relative variation of static dV/dt immunity<br>junction temperature for different values of blocking<br>versus junction temperature<br>voltage<br>dV/dt [Tj] / dV/dt [Tj = 150 °C]  IDRM/IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,VDRM/VRRM]*<br>6<br>5 VD = VR = 402 V 1.0E+00   [T*[Tjj max  max == 125  150 °°C; VC; VDRM DRM , V, VRRMRRM == 800 V] 600 V]<br>4<br>1.0E-01 VDRM = VRRM = 800 V<br>3<br>2 VDRM = VRRM = 600 V<br>1.0E-02<br>1<br>Tj(°C)<br>0<br>25 50 75 100 125 150 1.0E-03 Tj(°C)<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**DS12531** - **Rev 3** 

**page 5/11** 

**T835T-8G Ordering information** 

**2 Ordering information** 

## **Figure 13. Ordering information scheme** 

**==> picture [208 x 140] intentionally omitted <==**

**----- Start of picture text -----**<br>
T     8    35       T   -     8       G     TR<br>SnubberlessTM TRIAC<br>T = Triac<br>Current (RMS) / Type<br>8 = 8 A<br>Gate Current<br>35 = 35 mA<br>Specific application<br>T = increased (dl/dt) and dV/dt producing reduced ITSM<br>Voltage<br>8 = 800 V<br>Package<br>G = D²PAK<br>Packing<br>Blank = Tube<br>TR = Tape and reel<br>**----- End of picture text -----**<br>


**Table 5. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|T835T-8G-TR|T835T-8G|D²PAK|1.38 g|1000|Tape and reel|
|T835T-8G||||50|Tube|



**DS12531** - **Rev 3** 

**page 6/11** 

**T835T-8G Package information** 

**3 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

## **3.1 D²PAK package information** 

- ECOPACK2® compliant 

- Lead-free package leads finishing 

- Molding compound resin is halogen-free and meets UL standard level V0 

## **Figure 14. D²PAK package outline** 

**==> picture [381 x 352] intentionally omitted <==**

**----- Start of picture text -----**<br>
E A E1<br>c2 E2<br>1 2 3<br>b2<br>e<br>b Max resin gate protrusion: 0.5 mm (1)<br>G<br>A1<br>A2<br>A3<br>R<br>Gauge Plane<br>(1) Resin gate is accepted in each of position shown on the drawing, or their symmetrical.<br>c<br>V2<br>L2<br>D1<br>D<br>H<br>D2<br>L3<br>L<br>**----- End of picture text -----**<br>


**DS12531** - **Rev 3** 

**page 7/11** 

**T835T-8G D²PAK package information** 

## **Table 6. D²PAK package mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|
|**Ref.**|**Millimeters**|||**Inches(1)**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|4.30||4.60|0.1693||0.1811|
|A1|2.49||2.69|0.0980||0.1059|
|A2|0.03||0.23|0.0012||0.0091|
|A3||0.25|||0.0098||
|b|0.70||0.93|0.0276||0.0366|
|b2|1.25||1.7|0.0492||0.0669|
|c|0.45||0.60|0.0177||0.0236|
|c2|1.21||1.36|0.0476||0.0535|
|D|8.95||9.35|0.3524||0.3681|
|D1|7.50||8.00|0.2953||0.3150|
|D2|1.30||1.70|0.0512||0.0669|
|e||2.54|||0.1||
|E|10.00||10.28|0.3937||0.4047|
|E1|8.30||8.70|0.3268||0.3425|
|E2|6.85||7.25|0.2697||0.2854|
|G|4.88||5.28|0.1921||0.2079|
|H|15||15.85|0.5906||0.6240|
|L|1.78||2.28|0.0701||0.0898|
|L2|1.27||1.40|0.0500||0.0551|
|L3|1.40||1.75|0.0551||0.0689|
|R||0.40|||0.0157||
|V2(2)|0°||8°|0°||8°|



_1. Dimensions in inches are given for reference only_ 

_2. Degrees_ 

**DS12531** - **Rev 3** 

**page 8/11** 

**T835T-8G** 

**D²PAK package information** 

**Figure 15. D²PAK recommended footprint (dimensions are in mm)** 

**==> picture [310 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
16.90<br>10.30 5.08<br>=<br>1.30<br>wey. ro<br>3.70<br>8.90<br>**----- End of picture text -----**<br>


**Figure 16. D²PAK stencil definitions(dimensions are in mm)** 

**DS12531** - **Rev 3** 

**page 9/11** 

**T835T-8G** 

## **Revision history** 

**Table 7. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|30-Mar-2018|1|Initial release.|
|6-Jun-2018|2|Updated cover page description.|
|17-Jul-2018|3|UpdatedTable 2. Electrical characteristics (Tj= 25 °C, unless otherwise<br>specified).|



**DS12531** - **Rev 3** 

**page 10/11** 

**T835T-8G** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2018 STMicroelectronics – All rights reserved 

**DS12531** - **Rev 3** 

**page 11/11** 



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