# Triac, 800 V, 8 A, TO-220FPAB, 1.3 V, 60 A, 40 mA

![Product image](https://novapart.co/image/farnell:3106006/)

**URL**: https://novapart.co/products/T835T-8FP/triac-800-v-8-a-to-220fpab-13-60-40-ma
**SKU**: T835T-8FP
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.5740
**Stock**: 25+
**Lead Time**: 120 days (indicative)

## Description

Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current IT(rms):8A; Triac Case Style:TO-220FPAB; Gate Trigger Current Max (QI), Igt:35mA; Gate; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Product Range | Snubberless |
| Triac Case Style | TO-220FPAB |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 40mA |
| On State Rms Current | 8A |
| Peak On State Voltage | 1.55V |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 60A |
| Peak Repetitive Off State Voltage | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3106006/)

## **T835T-8FP** 

## 8 A Snubberless™ Triac 

− **Datasheet production data** 

**==> picture [58 x 152] intentionally omitted <==**

**----- Start of picture text -----**<br>
A2<br>G<br>A1<br>G<br>SS A2<br>A1<br>**----- End of picture text -----**<br>


## **Features** 

- Medium current Triac 

- High static and dynamic commutation 

- Three quadrants 

- ECOPACK[®] 2 compliant component 

- Complies with UL standards (File ref: E81734) 

## **Applications** 

- General purpose AC line load switching 

- Motor control circuits 

- Small home appliances 

- Lighting 

**TO-220FPAB (T835T-8FP)** 

**Table 1. Device summary** 

|**Symbol**|**Value**|**Unit**|
|---|---|---|
|IT(rms)|8|A|
|VDRM, VRRM|800|V|
|VDSM, VRSM|900|V|
|IGT|35|mA|



- Inrush current limiting circuits 

- Overvoltage crowbar protection 

## **Description** 

Available in through-hole full pack package, the T835T-8FP Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber circuit when the limits defined in this datasheet are respected 

Provides UL certified insulation rated at 2 kV. 

TM: Snubberless is a trademark of STMicroelectronics 

January 2015 

DocID024248 Rev 2 

1/9 

This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**T835T-8FP** 

## **1 Characteristics** 

**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)** 

|**Symbol**<br>**Parameter**<br>**Value**<br>**Unit**<br>~~aee~~|
|---|
|IT(rms)<br>On-state rms current (full sine wave)<br>Tc= 113°C<br>8<br>A<br>~~pf~~|
|ITSM<br>Non repetitive surge peak on-state<br>current (full cycle, Tjinitial = 25 °C)<br>F = 50 Hz<br>t = 20 ms<br>60<br>A<br>F = 60 Hz<br>t = 16.7 ms<br>63<br>I²t<br>I²t value for fusing, Tjinitial = 25 °C<br>tp= 10 ms<br>24<br>A²s<br>VDRM,<br>VRRM<br>Repetitive surge peak off-state voltage<br>Tj= 150 °C<br>600<br>V<br>Tj= 125 °C<br>800<br>VDSM,<br>VRSM<br>Non repetitive surge peak off-state voltage<br>tp= 10 ms<br>900<br>V<br>dI/dt<br>Critical rate of rise of on-state<br>current IG= 2 x IGT, tr ≤100 ns<br>F = 100 Hz<br>100<br>A/µs<br>~~ee~~<br>~~a~~<br>~~eeeee~~<br>~~aaa~~<br>~~aee~~<br>~~ee~~|
|IGM<br>Peak gate current<br>tp= 20 µs<br>Tj= 150 °C<br>4<br>A<br>~~a~~|
|PG(AV)<br>Average gate power dissipation<br>Tj= 150 °C<br>1<br>W<br>~~a~~|
|Tstg<br>Tj<br>Storage junction temperature range<br>Operating junction temperature range<br>- 40 to + 150<br>- 40 to + 150<br>°C|
|TL<br>Maximum lead temperature for soldering during 10 s<br>260<br>°C<br>~~a~~|
|Vins<br>Insulation rms voltage, 1 minute<br>2<br>kV<br>~~a~~|
|**Table 3. Electrical characteristics(Tj = 25 °C, unless otherwise stated)**|
|**Symbol**<br>**Test conditions**<br>**Quadrant**<br>**Value**<br>**Unit**<br>IGT<br>(1)<br>VD= 12 V, RL= 30Ω<br>I - II - III<br>Min.<br>1.75<br>mA<br>Max.<br>35<br>~~aeS~~<br>~~|~~|
|VGT<br>VD= 12 V, RL= 30Ω<br>I - II - III<br>Max.<br>1.3<br>V<br>~~Oe~~|
|VGD<br>VD= VDRM, RL= 3.3 kΩ,Tj= 150 °C<br>I - II - III<br>Min.<br>0.2<br>V<br>~~a~~|
|IH<br>(1)<br>IT= 500 mA<br>Max.<br>40<br>mA<br>~~a~~|
|1. For both polarities of A2 referenced to A1<br>IL<br>IG= 1.2 IGT<br>I - III<br>Max.<br>60<br>mA<br>II<br>Max.<br>65<br>mA<br>dV/dt<br>(1)<br>VD= 536 V, gate open<br>Tj= 125 °C<br>Min.<br>2000<br>V/µs<br>VD= 402 V, gate open<br>Tj= 150 °C<br>1000<br>V/µs<br>(dI/dt)c<br>(1)<br>Without snubber (dV/dt)c≥20 V/µs)<br>Tj= 125 °C<br>Min.<br>8<br>A/ms<br>Tj= 150 °C<br>4<br>~~a~~<br>~~|~~<br>~~eee~~<br>~~es~~<br>~~se~~<br>~~a eeee~~|



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DocID024248 Rev 2 

**Characteristics** 

**T835T-8FP** 

**Table 4. Static Characteristics** 

||**Table 4. Static Characteristics**|**Table 4. Static Characteristics**|**Table 4. Static Characteristics**|||
|---|---|---|---|---|---|
|**Symbol**|**Test conditions**|||**Value**|**Unit**|
|VT<br>(1)|ITM= 11.3 A, tp= 380 µs|Tj= 25 °C|Max.|1.55|V|
|Vt0<br>(1)|Threshold voltage|Tj= 150 °C|Max.|0.85|V|
|Rd<br>(1)|Dynamic resistance|Tj= 150 °C|Max.|57|mΩ|
|IDRM<br>IRRM|VDRM= VRRM= 800 V|Tj= 25 °C<br>Tj= 125 °C|Max.|5|µA|
|||||0.8|mA|
||VDRM= VRRM= 600 V|Tj= 150 °C|Max.|2.4||



1. For both polarities of A2 referenced to A1 

**Table 5. Thermal resistance** 

||**Table 5. Thermal resistance**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rth(j-c)|Junction to case (AC)|3.8|°C/W|
|Rth(j-a)|Junction to ambient|60|°C/W|



**Figure 1. Maximum power dissipation versus on-state rms current (full cycle)** 

**Figure 2. On-state rms current versus case temperature (full cycle)** 

**==> picture [448 x 319] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 P(W) 9 IT(RMS)(A)<br>α =180° 8 α =180°<br>8 | 7 ee<br>REE) FERRE<br>6<br>6 Oe<br>5<br>eee<br>4<br>4<br>i0 ary 3 eeA A MI<br>2 180° 2<br>a I T(RMS) (A) 1 CEP EEE TC(°C) Eee<br>0 0<br>0 BEE 1 2 3  Tie) 4 5 6 7 8 0 FEE 25 50 75 100 ery 125 150<br>Figure 3. On-state rms current versus ambient  Figure 4. Relative variation of thermal<br>temperature (free air convection) impedance versus pulse duration<br>3.0 IT(RMS)(A) 1.0E+00 K = [Z th  / R th ]<br>α  = 180°<br>2.5 Z th(j-c)<br>PSE EEE] | Ett<br>2.0 Z th(j-a)<br>Ne EH tte<br>1.5 | 1.0E-01 TIT TT CORA nT TTT<br>1.0 Ge Gs es es es | Sa<br>0.5<br>SEEEEEEERSEE Ta(°C) |<br>0.0 es 1.0E-02 tp (s)<br>0 25 50 75 100 125 150 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03<br>**----- End of picture text -----**<br>


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**Characteristics** 

**T835T-8FP** 

**Figure 5. On-state characteristics (maximum values)** 

**Figure 6. Surge peak on-state current versus number of cycles** 

**==> picture [445 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 ITM(A) 70 ITSM(A)<br>60<br>Bee | (TM Lil l<br>t = 20 ms<br>50<br>SEEERSEEES RVtodT = 57 m = 0.85 Vj max : 40 TNon repetitivej initial=25 °C One cycle<br>10 coer ES |  Cm Mr Sol<br>30<br>Se  ere) ) a<br>Tj = 150 °C 20<br>BORE |<br>PEPER Tj = 25 °C EES | 10 LAU TRepetitiveC= 113 °C PAT Number of cycles TT<br>1 PTT PTTeee VTM(V) 0 - FSS0eee<br>1 10 100 1000<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>**----- End of picture text -----**<br>


**Figure 7. Non repetitive surge peak on-state current and corresponding values of I[2] t** 

**Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values)** 

**==> picture [445 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 ITSM(A), I²t (A²s dI/dt limitation: 100 A/µs ) Tj initial=25  ° C 2.0 IGT[T j] / IGT[Tj = 25 °C], VGT[T j] / VGT[Tj = 25 °C Typical values ]<br>IGT Q1-Q2<br>na ITSM 1.5 IGT Q3<br>100 1.0 VGT<br>CHESS | x YAY<br>| GREE<br>I²t 0.5<br>Frehe |<br>10 eal Sinusoidal pulse with width tp<10 ms PTE) tp(ms) | 0.0 CErr Tj(°C)<br>0.01 0.10 1.00 10.00 -50 -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 9. Relative variation of static dV/dt immunity versus junction temperature (typical values)** 

**Figure 10. Relative variation of holding and latching current versus junction temperature (typical values)** 

**==> picture [444 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 dV/dt [Tj] / dV/dt [T j=150 °C] 2.0 IH, IL[T ] / Ij H, IL[Tj = 25 °C]<br>NY VD=VR=402V<br>(dV/dt) > 5KV/µs<br>4 1.5 IL<br>PT Pt) TE<br>3 EERE IH Tt |<br>1.0<br>2 SKEH |  FSSC<br>0.5<br>1<br>0 CEEEHERS) Tj(°C) 0.0 CECE T (°C)j<br>25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


4/9 DocID024248 Rev 2 ~~2~~ 

**Characteristics** 

**T835T-8FP** 

**Figure 11. Relative variation of critical rate of decrease of main current (di/dt)c versus reapplied (dV/dt)c (typical values)** 

**Figure 12. Relative variation of critical rate of decrease of main current (di/dt)c versus junction temperature (typical values)** 

**==> picture [444 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
6 (dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c 8 (dl / dt)c [T ] / (dl / dt)j c [Tj = 150 °C]<br>Tj =150 °C<br>7<br>5<br>tn 6 ee<br>4<br>3 EAIaTTI EAN | 54 FSS 4<br>3<br>2<br>EN EEE ET 2 ER<br>1<br>eT) 1 Ss<br>0 LTH TT Do) (dV/dt)c (V/µs) | 0 GES T (°C)j<br>0.1 1.0 10.0 100.0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values)** 

**==> picture [214 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
I DRM   RRM , I @ [T ; V j DRM , V RRM ] / I DRM   RRM  , I [@ [] T jmax []][*]<br>1.0E+00<br>VDRM=VRRM=800 V<br>1.0E-01<br>ee VDRM=VRRM=600 V<br>Sees<br>1.0E-02 2 ==<br>==2<br>VDRM=VRRM=400 V<br>eee<br>oe 4) 4====<br>1.0E-03 ae * IDRM, IRRM @: ==<br>[Tjmax = 125 °C; 800 V]<br>[Tjmax = 150 °C; 600 V] T (°C) j<br>1.0E-04<br>25 aTT 50 75 100 TT 125 150<br>**----- End of picture text -----**<br>


DocID024248 Rev 2 5/9 ~~$7~~ 

**Package information** 

**T835T-8FP** 

## **2 Package information** 

- Epoxy meets UL94, V0 

- Lead-free package 

- Recommended torque: 0.4 to 0.6 N·m 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com._ ECOPACK[®] is an ST trademark. 

## **Figure 14. TO-220FPAB dimension definitions** 

**==> picture [193 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>H B<br>Dia<br>L6<br>L2 L7<br>L3<br>L5<br>D<br>F1<br>L4<br>F2<br>F E<br>G1<br>ri<br>G<br>**----- End of picture text -----**<br>


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**T835T-8FP** 

**Package information** 

**Table 6. TO-220FPAB dimension values** 

||**Table 6. TO-220FPAB dimension values**|**Table 6. TO-220FPAB dimension values**|**Table 6. TO-220FPAB dimension values**|**Table 6. TO-220FPAB dimension values**|
|---|---|---|---|---|
|**Ref.**<br>~~a~~|**Dimensions**<br>~~a~~||||
||**Millimeters**<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~es~~||**Inches**<br>~~a~~<br>~~ee~~<br>~~ee~~||
||**Min.**<br>~~ee~~<br>~~a~~|**Max.**<br>~~ee~~<br>~~es~~|**Min.**<br>~~ee~~<br>~~ee~~|**Max.**<br>~~ee~~<br>~~ee~~|
|A<br>~~a~~<br>~~es~~|4.4<br>~~a~~|4.6<br>~~es~~|0.173<br>~~ee~~|0.181<br>~~ee~~|
|B<br>~~a~~<br>~~es~~<br>~~es~~|2.5<br>~~a~~|2.7<br>~~es~~|0.098<br>~~ee~~|0.106<br>~~ee~~|
|D<br>~~es~~<br>~~es~~<br>~~es~~|2.5|2.75|0.098|0.108|
|E<br>~~es~~<br>~~es~~<br>~~es~~|0.45|0.70|0.018|0.027|
|F<br>~~es~~<br>~~es~~<br>~~es~~|0.75|1|0.030|0.039|
|F1<br>~~es~~<br>~~es~~<br>~~es~~|1.15|1.70|0.045|0.067|
|F2<br>~~es~~<br>~~es~~|1.15|1.70|0.045|0.067|
|G<br>~~es~~<br>~~Ce~~<br>~~es~~|4.95<br>~~Ce~~|5.20<br>~~Ce~~|0.195<br>~~Ce~~|0.205<br>~~Ce~~|
|G1<br>~~es~~<br>~~es~~|2.4|2.7|0.094|0.106|
|H<br>~~es~~<br>~~es~~<br>~~es~~|10|10.4|0.393|0.409|
|L2<br>~~es~~<br>~~es~~<br>~~es~~|16 Typ.||0.63 Typ.||
|L3<br>~~es~~<br>~~es~~<br>~~es~~|28.6|30.6|1.126|1.205|
|L4<br>~~es~~<br>~~es~~|9.8|10.6|0.386|0.417|
|L5<br>~~es~~<br>~~Ce~~<br>~~es~~|2.9<br>~~Ce~~|3.6<br>~~Ce~~|0.114<br>~~Ce~~|0.142<br>~~Ce~~|
|L6<br>~~es~~<br>~~es~~|15.9|16.4|0.626|0.646|
|L7<br>~~es~~<br>~~es~~<br>~~es~~|9.00|9.30|0.354|0.366|
|Dia.<br>~~es~~<br>~~es~~|3.00|3.20|0.118|0.126|



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**Ordering information** 

**T835T-8FP** 

**3 Ordering information Figure 15. Ordering information scheme T       8      35 T   -    8       FP Triac Current** 8 = 8 A **Gate sensitivity** 35 = 35 mA **Specific application** T = Increased (dI/dt)c and dV/dt producing reduced ITSM **Voltage (VDRM, VRRM)** 8 = 800 V **Package** FP = TO-220FPAB =] **Table 7. Ordering information Order code Marking Package Weight Base qty Delivery mode** T835T-8FP T835T-8FP TO-220FPAB 2.0 g 50 Tube 

## **4 Revision history** 

|**Date**<br>~~rr~~|**Revision**<br>~~rr~~|**Changes**<br>~~rr~~|
|---|---|---|
|05-Mar-2013<br>~~rr~~|1<br>~~rr~~|Initial release.<br>~~rr~~|
|14-Jan-2015<br>~~rr~~|2<br>~~rr~~|Updated_Features_,_Table 2_and_Table 5_.<br>~~rr~~|



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**T835T-8FP** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

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