# Triac, 800 V, 8 A, TO-263 (D2PAK), 1.3 V, 60 A, 15 mA

![Product image](https://novapart.co/image/farnell:3585958/)

**URL**: https://novapart.co/products/T810T-8G-TR/triac-800-v-8-a-to-263-d2pak-13-60-15-ma
**SKU**: T810T-8G-TR
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.2710
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | T |
| Triac Case Style | TO-263 (D2PAK) |
| Thyristor Mounting | Surface Mount |
| Holding Current Max | 15mA |
| On State Rms Current | 8A |
| Peak On State Voltage | 1.55V |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 60A |
| Peak Repetitive Off State Voltage | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3585958/)

**T810T-8G** 

Datasheet 

## 8 A - 800 V logic level T-series Triac in D²PAK 

## **Features** 

**==> picture [69 x 88] intentionally omitted <==**

**----- Start of picture text -----**<br>
A2<br>A2<br>A1<br>G<br>D²PAK<br>**----- End of picture text -----**<br>


**==> picture [103 x 65] intentionally omitted <==**

**----- Start of picture text -----**<br>
A2<br>A2: Anode2<br>A1: Anode1<br>G: Gate<br>G<br>A1<br>**----- End of picture text -----**<br>


- 150 °C maximum junction temperature 

- Three quadrants 

- High commutation on resistive loads 

- Surge capability VDSM, VRSM = 900 V 

- Benefits: 

   - Easy direct control by MCU thanks to low 10 mA IGT 

   - Increase of thermal margin due to extended working Tj up to 150 °C 

## **Applications** 

- General purpose AC line load switching 

- Small home appliances with resistive loads 

- Hybrid relays 

- Inrush current limiting circuits 

- Overvoltage crowbar protection 

## **Description** 

The SMD T810T-8G Triac can be used for the on/off or phase angle control function in general purpose AC switching with resistive loads. A Logic level T-series Triac, the T810T-8G can be controlled directly from an MCU with a simplified circuit. 

**Product status link** T810T-8G 

|**Product summary**|**Product summary**|
|---|---|
|**IT(RMS)**|8 A|
|**VDRM/VRRM**|800 V|
|**VDSM/VRSM**|900 V|
|**IGT**|10 mA|



T-series triacs are optimized for high EMI constraints. The surface mount D[2] PAK package enables compact SMT designs for automated manufacturing. 

D[2] PAK's molding compound resin is halogen-free and meets UL94 flammability standard level V0. 

Package environmentally friendly ECOPACK2 graded (RoHS and Halogen Free compliance). 

**DS13366** - **Rev 2** - **October 2020** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**T810T-8G Characteristics** 

**1** 

## **Characteristics** 

**Table 1. Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified** 

|**Symbol**|**Parameter**|||**Value**|**Unit**|
|---|---|---|---|---|---|
|IT(RMS)|RMS on-state current (full sine wave)||Tc= 131 °C|8|A|
|ITSM|Non repetitive surge peak on-state current (Tjinitial = 25 °C)|t = 16.7 ms|Tj= 25 °C|63|A|
|||t = 20 ms||60||
|I2t|I2t value for fusing|tp= 10 ms|Tj= 25 °C|24|A2s|
|dl/dt|Critical rate of rise of on-state current, IG= 2 x IGT, tr ≤ 100 ns|f = 50 Hz|Tj= 25 °C|100|A/µs|
|VDRM/VRRM|Repetitive peak off-state voltage||Tj= 125 °C|800|V|
||||Tj= 150 °C|600|V|
|VDSM/VRSM|Non Repetitive peak off-state voltage|tp= 10 ms|Tj= 25 °C|900|V|
|IGM|Peak gate current|tp= 20 µs|Tj= 150 °C|4|A|
|VGM|Peak Gate Voltage||Tj= 150 °C|5|V|
|PG(AV)|Average gate power dissipation||Tj= 150 °C|1|W|
|Tstg|Storage junction temperature range|||-40 to +150|°C|
|Tj|Operating junction temperature range|||-40 to +150|°C|



**Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)** 

|**Symbol**|**Test conditions**|**Test conditions**|**Quadrants; Tj**||**Value**|**Unit**|
|---|---|---|---|---|---|---|
|IGT(1)|VD= 12 V, RL= 30 Ω||I - II - III|Min.|0.5|mA|
||||I - II - III|Max.|10||
|VGT|VD= 12 V, RL= 30 Ω||I - II - III|Max.|1.3|V|
|VGD|VD= 800 V, RL= 3.3 kΩ|Tj= 125 °C|I - II - III|Min.|0.2|V|
|IL|IG= 1.2 x IGT||I - III|Max.|20|mA|
||IG= 1.2 x IGT||II|Max.|25|mA|
|IH (2)|IT= 500 mA, gate open|||Max.|15|mA|
|dV/dt(2)|VD= 536 V, gate open||Tj= 125 °C|Min.|250|V/µs|
||VD= 402 V, gate open||Tj= 150 °C|Min.|170|V/µs|
|(dl/dt)c(2)|(dV/dt)c = 0.1 V/μs||Tj= 125 °C|Min.|6|A/ms|
||||Tj= 150 °C||4.2||
||(dV/dt)c = 10 V/μs||Tj= 125 °C|Min.|3.2|A/ms|
||||Tj= 150 °C||1.4||



_1. Minimum IGT is guaranteed at 5% of IGT max_ 

_2. For both polarities of A2 referenced to A1._ 

**DS13366** - **Rev 2** 

**page 2/12** 

**T810T-8G Characteristics** 

## **Table 3. Static characteristics** 

|**Symbol**|**Test conditions**|**Tj**||**Value**|**Unit**|
|---|---|---|---|---|---|
|VTM (1)|IT= 11.3 A, tp= 380 µs|25 °C|Max.|1.55|V|
|VTO(1)|Threshold on-state voltage|150 °C|Max.|0.85|V|
|RD(1)|Dynamic resistance|150 °C|Max.|57|mΩ|
|IDRM/IRRM|VDRM= VRRM= 800 V|25 °C|Max.|5|µA|
|||125°C||0.8|mA|
||VDRM= VRRM= 600 V|150 °C|Max.|2.4|mA|



_1. For both polarities of A2 referenced to A1._ 

**Table 4. Thermal resistance** 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|Rth(j-c)|Junction to case (AC)|Max.|1.9|°C/W|
|Rth(j-a)|Junction to ambient (AC) for SCu= 2 cm²|Typ.|45||



**DS13366** - **Rev 2** 

**page 3/12** 

**T810T-8G Characteristics (curves)** 

## **1.1 Characteristics (curves)** 

**==> picture [230 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 1. Maximum power dissipation versus on-state<br>RMS current<br>P(W)<br>10<br>α =180°<br>8<br>6<br>4<br>180 °<br>2 α<br>α  IT(RMS)(A)<br>0<br>0 1 2 3 4 5 6 7 8<br>**----- End of picture text -----**<br>


**Figure 2. On-state RMS current versus case temperature** 

**==> picture [223 x 141] intentionally omitted <==**

**----- Start of picture text -----**<br>
IT(RMS)(A)<br>9<br>8 α =180°<br>7<br>6<br>5<br>4<br>3<br>2<br>1 T c (°C)<br>0<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**==> picture [513 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3. On-state RMS current versus ambient Figure 4. Relative variation of thermal impedance versus<br>temperature (free air convection) pulse duration<br>IT(RMS)(A) K = [Zth/ Rth]<br>3.0 1.0E+00<br> Zth(j-c)<br>2.5<br>2.0 Zth(j-a)<br>1.5 1.0E-01<br>1.0<br>0.5<br>Ta(°C)<br>tP(s)<br>0.0 1.0E-02<br>0 25 50 75 100 125 150 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03<br>**----- End of picture text -----**<br>


**==> picture [224 x 156] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 5. On-state characteristics (maximum values)<br>ITM(A)<br>100<br>T j  max:<br>Vto= 0.85 V<br>10 R d  = 57 mΩ<br> T  = 150 °C<br>j  Tj = 25 °C VTM(V)<br>1<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>**----- End of picture text -----**<br>


**Figure 6. Surge peak on-state current versus number of cycles** 

**==> picture [216 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
ITSM(A)<br>70<br>60 Non repetitive T j  initial = 25 °C<br>20 ms<br>50<br>One cycle<br>40<br>30<br>20 Repetitive T c  = 131 °C<br>10<br>Number of cycles<br>0<br>1 10 100 1000<br>**----- End of picture text -----**<br>


**DS13366** - **Rev 2** 

**page 4/12** 

**T810T-8G Characteristics (curves)** 

**==> picture [513 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. Relative variation of gate trigger current and<br>Figure 7. Non repetitive surge peak on-state current<br>gate voltage versus junction temperature (typical values)<br>1000 ITSM(A)  Tj initial = 25 °C 2.5 IGT, VGT [ Tj ] / IGT, VGT [ Tj = 25 °C]<br>IGT Q3<br>2.0<br> dl/dt limitation: 100 A/µs<br>ITSM 1.5 I GT  Q1-Q2<br>100<br>1.0  V GT<br>0.5<br>Tp(ms) T j (°C)<br>10 0.0<br>0.01 0.10 1.00 10.00<br>-50 -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 9. Relative variation of critical rate of decrease of main current versus junction temperature (typical values)** 

**==> picture [207 x 135] intentionally omitted <==**

**----- Start of picture text -----**<br>
8 (dI/dt)c[Tj] / (dI/dt)c[Tj = 150 °C]<br>7 (dV/dt) c  = 10 V/µs<br>6<br>5<br>4<br>3<br>2<br>1<br>Tj(°C)<br>0<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 10. Relative variation of holding current and latching current versus junction temperature (typical values)** 

**==> picture [208 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 IH, IL [ Tj ] / IH, IL  [ Tj = 25 °C]<br>IH<br>1.5<br>IL<br>1.0<br>0.5<br>Tj(°C)<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**==> picture [513 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 11. Relative variation of critical rate of decrease of<br>Figure 12. Relative variation of static dV/dt immunity<br>main current (dI/dt)C versus reapplied (dI/dt)C (maximum<br>versus junction temperature (typical values)<br>values)<br>(dI/dt)c [ (dV/dt)c ] / specified (dI/dt)c 5 dV/dt [Tj] / dV/dt [Tj= 150 °C]<br>3 VD = VR = 402 V; 150 (°C)<br>4<br>2 3<br>Tj = 150 (°C)<br>2<br>1<br>Tj = 125 (°C) 1<br>Tj (°C)<br>(dV/dt)c (V/µs) 0<br>0 25 50 75 100 125 150<br>0.1 1.0 10.0 100.0<br>**----- End of picture text -----**<br>


**DS13366** - **Rev 2** 

**page 5/12** 

**T810T-8G Characteristics (curves)** 

**==> picture [513 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13. Relative variation of leakage current versus Figure 14. Thermal resistance junction to ambient versus<br>junction temperature for different values of blocking copper surface under tab<br>voltage (typical values)<br>IDRM, IRRM [ Tj; VDRM, VRRM] / IDRM, IRRM 80 Rth(j-a) (°C/W)<br>1.0E+00 Epoxy printed circuit board FR4, eCu = 35 µm D²PAK<br>VDRM = VRRM = 800 V 70<br>60<br>1.0E-01 VDRM = VRRM = 600 V<br>50<br>1.0E-02 VDRM = VRRM = 400 V 40<br>30<br>1.0E-03 20<br>Tj ( ° C) [[TTj = 150 °Cj = 125 °C;; 600 V800 V]] 10 SCu(cm²)<br>1.0E-04 0<br>0 5 10 15 20 25 30 35 40<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**DS13366** - **Rev 2** 

**page 6/12** 

**T810T-8G Package information** 

**2** 

## **Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

## **2.1** 

## **D²PAK package information** 

- ECOPACK2 compliant 

- Lead-free package leads finishing 

- Molding compound resin is halogen-free and meets UL standard level V0 

## **Figure 15. D²PAK package outline** 

**==> picture [320 x 312] intentionally omitted <==**

**----- Start of picture text -----**<br>
E A E1<br>c2 E2<br>1 2 3<br>b2<br>e<br>b Max resin gate protrusion: 0.5 mm (1)<br>G<br>A1<br>A2<br>A3<br>R<br>Gauge Plane<br>c<br>V2<br>L2<br>D1<br>D<br>H<br>D2<br>L3<br>L<br>**----- End of picture text -----**<br>


- (1) Resin gate is accepted in each of position shown on the drawing, or their symmetrical. 

**DS13366** - **Rev 2** 

**page 7/12** 

**T810T-8G D²PAK package information** 

## **Table 5. D²PAK package mechanical data** 

||**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|**Dimensions**|
|---|---|---|---|---|---|---|
|**Ref.**|**Millimeters**|||**Inches(1)**|||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|4.30||4.60|0.1693||0.1811|
|A1|2.49||2.69|0.0980||0.1059|
|A2|0.03||0.23|0.0012||0.0091|
|A3||0.25|||0.0098||
|b|0.70||0.93|0.0276||0.0366|
|b2|1.25||1.7|0.0492||0.0669|
|c|0.45||0.60|0.0177||0.0236|
|c2|1.21||1.36|0.0476||0.0535|
|D|8.95||9.35|0.3524||0.3681|
|D1|7.50||8.00|0.2953||0.3150|
|D2|1.30||1.70|0.0512||0.0669|
|e||2.54|||0.1||
|E|10.00||10.28|0.3937||0.4047|
|E1|8.30||8.70|0.3268||0.3425|
|E2|6.85||7.25|0.2697||0.2854|
|G|4.88||5.28|0.1921||0.2079|
|H|15||15.85|0.5906||0.6240|
|L|1.78||2.28|0.0701||0.0898|
|L2|1.19||1.40|0.0468||0.0551|
|L3|1.40||1.75|0.0551||0.0689|
|R||0.40|||0.0157||
|V2(2)|0°||8°|0°||8°|



_1. Dimensions in inches are given for reference only_ 

_2. Degrees_ 

**DS13366** - **Rev 2** 

**page 8/12** 

**T810T-8G D²PAK package information** 

**Figure 16. D²PAK recommended footprint (dimensions are in mm)** 

**==> picture [311 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
16.90<br>10.30 5.08<br>=<br>1.30<br>ye. t a<br>3.70<br>8.90<br>**----- End of picture text -----**<br>


**Figure 17. D²PAK stencil definitions(dimensions are in mm)** 

**DS13366** - **Rev 2** 

**page 9/12** 

**T810T-8G Ordering information** 

**3** 

## **Ordering information** 

**Figure 18. Ordering information scheme** 

**==> picture [322 x 220] intentionally omitted <==**

**----- Start of picture text -----**<br>
T     8   10       T   -     8       G     TR<br>Snubberless TRIAC<br>T = Triac<br>Current (RMS) / Type<br>8 = 8 A<br>Gate Current<br>10 = 10 mA<br>Series<br>T = T-series Triac<br>Voltage<br>8 = 800 V<br>Package<br>G = D²PAK<br>Packing<br>Blank = Tube<br>TR = Tape and reel<br>**----- End of picture text -----**<br>


**Table 6. Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|T810T-8G-TR|T810T-8G|D²PAK|1.6 g|1000|Tape and reel|
|T810T-8G||||50|Tube|



**DS13366** - **Rev 2** 

**page 10/12** 

**T810T-8G** 

## **Revision history** 

**Table 7. Document revision history** 

|**Date**|**Version**|**Changes**|
|---|---|---|
|04-Jun-2020|1|Initial release.|
|20-Oct-2020|2|UpdatedTable 5.|



**DS13366** - **Rev 2** 

**page 11/12** 

**T810T-8G** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2020 STMicroelectronics – All rights reserved 

**DS13366** - **Rev 2** 

**page 12/12** 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/t810t-8g-tr/triac-800v-8a-to-263/dp/3585958)
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