# Triac, 800 V, 8 A, TO-220FPAB, 1.3 V, 60 A, 15 mA

![Product image](https://novapart.co/image/farnell:3106004/)

**URL**: https://novapart.co/products/T810T-8FP/triac-800-v-8-a-to-220fpab-13-60-15-ma
**SKU**: T810T-8FP
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.5910
**Stock**: 10+

## Description

Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current IT(rms):8A; Triac Case Style:TO-220FPAB; Gate Trigger Current Max (QI), Igt:10mA; Gate Trigger Voltage Max Vgt:1.3V; Peak Ga

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Triac Case Style | TO-220FPAB |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 15mA |
| On State Rms Current | 8A |
| Peak On State Voltage | 1.55V |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 60A |
| Peak Repetitive Off State Voltage | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3106004/)

## **T810T-8FP** 

## 8 A logic level Triac 

− **Datasheet production data** 

## **Description** 

Available in through-hole full pack package, the T810T-8FP Triac can be used for the on/off or phase angle control function in general purpose AC switching. This device can be directly driven by a microcontroller due to its 10 mA gate current requirement. Provide UL certified insulation rated at 2000 VRMS. 

**Table 1. Device summary** 

|**Symbol**|**Value**|**Unit**|
|---|---|---|
|IT(rms)|8|A|
|VDRM, VRRM|800|V|
|VDSM, VRSM|900|V|
|IGT|10|mA|



## **Features** 

- Medium current Triac 

- Three quadrants 

- ECOPACK[®] 2 and RoHS compliant component 

- Complies with UL standards (File ref: E81734) 

- High performance Triac: 

   - High Tj family 

   - High dI/dt family 

   - High dV/dt family 

- Insulated package TO-220FPAB: 

   - Insulated voltage: 2000 VRMS 

## **Applications** 

- General purpose AC line load switching 

- Motor control circuits 

- Small home appliances 

- Lighting 

- Inrush current limiting circuits 

- Overvoltage crowbar protection 

February 2015 

DocID025736 Rev 2 

1/9 

This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**T810T-8FP** 

## **1 Characteristics** 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Value**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|
|IT(rms)<br>~~a~~|On-state rms current (full sine wave)||Tc= 113°C|8|A|
|ITSM|Non repetitive surge peak on-state<br>current (full cycle, Tjinitial = 25 °C)|F = 50 Hz|t = 20 ms|60|A|
|||F = 60 Hz<br>~~ee~~|t = 16.7 ms<br>~~ee~~|63<br>~~ee~~||
|I²t<br>~~a~~|I²t value for fusing, Tjinitial = 25 °C<br>||tp= 10 ms<br>|24<br>|A²s<br>|
|VDRM,<br>VRRM<br>~~ae~~|Repetitive surge peak off-state voltage<br>~~ae~~||Tj= 150 °C<br>~~ae~~|600<br>~~ae~~|V<br>~~ae~~|
||||Tj= 125 °C<br>~~ae~~|800<br>~~ae~~||
|VDSM,<br>VRSM<br>~~a~~|Non repetitive surge peak off-state voltage||tp= 10 ms|900|V|
|dI/dt|Critical rate of rise of on-state<br>current IG= 2 x IGT, tr ≤100 ns|F = 100 Hz||100|A/µs|
|IGM<br>~~a~~|Peak gate current|tp= 20 µs|Tj= 150 °C|4|A|
|PG(AV)<br>~~a~~|Average gate power dissipation||Tj= 150 °C|1|W|
|Tstg<br>Tj|Storage junction temperature range<br>Operating junction temperature range|||- 40 to + 150<br>- 40 to + 150|°C|
|TL<br>~~a~~|Maximum lead temperature for soldering during 10 s|||260|°C|
|Vins<br>~~a~~|Insulation rms voltage, 1 minute|||2|kV|



|**Symbol**<br>~~a~~|**Test conditions**<br>~~ee~~|**Quadrant**<br>~~ee~~|~~ee~~|**Value**<br>~~eee~~|**Unit**<br>~~eee~~|
|---|---|---|---|---|---|
|IGT<br>(1)<br>~~a~~|VD= 12 V, RL= 30Ω<br>~~ee~~<br>~~a~~|I - II - III<br>~~ee~~<br>~~a~~|Min.<br>~~ee ~~<br>~~a~~|0.5<br> ~~eee~~<br>~~a~~|mA<br>~~eee~~<br>~~a~~|
||||Max.<br>~~a~~<br>~~|~~|10<br>~~a~~<br>~~|~~||
|VGT<br>~~a~~|VD= 12 V, RL= 30Ω|I - II - III|Max.|1.3|V|
|VGD<br>~~a~~|VD= VDRM, RL= 3.3 kΩ,Tj= 150 °C|I - II - III|Min.|0.2|V|
|IH<br>(1)<br>~~a~~|IT= 500 mA<br>~~O~~||Max.<br>~~O~~|15<br>~~O~~|mA<br>~~O~~|
|IL<br>~~/~~|IG= 1.2 IGT|I - III|Max.<br>~~ee~~|20<br>~~ee~~|mA<br>~~ee~~|
|||II<br>~~ee~~|Max.<br>~~ee~~<br>~~ee~~|25<br>~~ee~~<br>~~ee~~|mA<br>~~ee~~<br>~~ee~~|
|dV/dt<br>(1)<br>~~/~~|VD= VR= 536 V, gate open<br>~~f+}~~|Tj= 125 °C<br>~~f+}~~|Min.<br>~~ee~~<br>~~f+}~~<br>~~a~~|250<br>~~ee~~<br>~~f+}~~|V/µs<br>~~ee~~<br>~~—~~|
||VD= VR= 402 V, gate open<br>~~f+}~~<br>~~a~~|Tj= 150 °C<br>~~f+}~~<br>~~a~~||170<br>~~ee~~<br>~~f+} ~~<br>~~a~~|V/µs<br>~~ee~~<br> ~~—~~<br>~~a~~|
|(dI/dt)c<br>(1)<br>~~/~~<br>~~a~~|(dV/dt)c=0.1 V/µs<br>~~a~~|Tj= 125 °C<br>~~a~~|Min.<br>~~ee~~<br>~~a~~|6.0<br>~~ee~~<br>~~a~~|A/ms<br>~~ee~~<br>~~a~~|
|||Tj= 150 °C<br>~~a~~<br>~~a~~||4.2<br>~~a~~<br>~~ee~~||
|(dI/dt)c<br>(1)<br>~~es~~|(dV/dt)c=10 V/µs<br>~~es~~|Tj= 125 °C<br>~~a~~|Min.<br>~~ee~~|3.2|A/ms|
|||Tj= 150 °C<br>~~a~~||1.4||



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DocID025736 Rev 2 

**Characteristics** 

**T810T-8FP** 

**Table 4. Static characteristics** 

||**Table 4. Static characteristics**|**Table 4. Static characteristics**|**Table 4. Static characteristics**|||
|---|---|---|---|---|---|
|**Symbol**|**Test conditions**|||**Value**|**Unit**|
|VT<br>(1)|ITM= 11.3 A, tp= 380 µs|Tj= 25 °C|Max.|1.55|V|
|Vt0<br>(1)|Threshold voltage|Tj= 150 °C|Max.|0.85|V|
|Rd<br>(1)|Dynamic resistance|Tj= 150 °C|Max.|57|mΩ|
|IDRM<br>IRRM|VDRM= VRRM= 800 V|Tj= 25 °C<br>Tj= 125 °C|Max.|5|µA|
|||||0.8|mA|
||VDRM= VRRM= 600 V|Tj= 150 °C|Max.|2.4||



1. For both polarities of A2 referenced to A1 

**Table 5. Thermal resistance** 

||**Table 5. Thermal resistance**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rth(j-c)|Junction to case (AC)|3.8|°C/W|
|Rth(j-a)|Junction to ambient (DC)|60|°C/W|



**Figure 2. On-state rms current versus case temperature (full cycle)** 

**Figure 1. Maximum power dissipation versus on-state rms current (full cycle)** 

**==> picture [447 x 318] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 a P(W) a OO02 98 IT(RMS)(A) =180  [°]<br>8<br>7<br>SE | 6 Seo<br>6 ee<br>iee} 5 EE<br>4 Poet rr] 4 FEE EE EE EE TAA<br>3<br>ce Se<br>2 180° 2<br>I T(RMS) (A) 1 TC(°C)<br>0 SEEsate"| paoo e fod || 0  SeFEERREEE AEry<br>0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150<br>Figure 3. On-state rms current versus ambient  Figure 4. Relative variation of thermal<br>temperature (free air convection)perature (free air convection)erature (free air convection)(free air convection)free air convection)) impedance versus pulse duration<br>3.0 IT(RMS)(A) 1.0E+00 K = [Zth / Rth]<br>α  = 180°<br>2.5 Zth(j-c)<br>2.0 Zth(j-a)<br>1.5 1.0E-01<br>EERE | CTC<br>1.0<br>a Sieetttieetttt<br>0.5<br>t+ mati maitiimaetit<br>Ta(°C) tp (s)<br>0.0 0 SSS 25 EE)++ 50 75 ++SSRIS 100 +4 125 HJ 150 1.0E-021.0E-03 a UII 1.0E-02 ETT [1.0E-01] LIMEUM 1.0E+00 [1.0E+01 ]  Tl 1.0E+02 [1.0E+03]<br>**----- End of picture text -----**<br>


**Figure 3. On-state rms current versus ambient temperature (free air convection)perature (free air convection)erature (free air convection)(free air convection)free air convection))** 

DocID025736 Rev 2 

3/9 

**Characteristics** 

**T810T-8FP** 

**==> picture [215 x 23] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 5. On-state characteristics (maximum<br>values)<br>**----- End of picture text -----**<br>


**Figure 6. Surge peak on-state current versus number of cycles** 

**==> picture [448 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 ITM(A) ITSM(A)<br>70<br>60<br>t = 20 ms<br>aoeSe e eer | Oa<br>eee Tj er max : | 50 tod li Non repetitive {TTI One cycle |<br>RVtod = 57 m = 0.85 V 40 Tj initial=25°C<br>10 Eee<br>30<br>See | ta<br>Tj = 150 °C 7See 20 TAS TT Tt<br>Tj = 25 °C 10 Repetitive<br>1 FLEETOCGAEESSEEEEEEe!ELLEACG VTM(V) | 0 ailHifi TC= 113 °C [TT Number of cycles ne<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 10 100 1000<br>**----- End of picture text -----**<br>


**Figure 7. Non repetitive surge peak on-state current and corresponding values of I[2] t** 

**Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values)** 

**==> picture [441 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000ITSM(A), I²t  dI/dt limitation: 100 A/µs (A²s) Tj initial=25 ° C 2.5 IGT,VGT [Tj] / IGT,VGT [Tj=25 °C]<br>2.0 IGT Q1-Q2<br>ITSM IGT Q3<br>HE | HH ro Y ee<br>rest Tt 1.5 tot), St + 4<br>100<br>CCU CELUI | 1.0 SFP V GT<br>I²t 0.5<br>a | | | EL<br>Pp esa<br>10 | Sinusoidal pulse with width tp<10 ms tp(ms) 0.0-50 a -25 a 0 25 50 75 100Tj(°C) 125 150<br>0.01 0.10 1.00 10.00<br>**----- End of picture text -----**<br>


**Figure 9. Relative variation of static dV/dt immunity versus junction temperature (typical values)** 

**Figure 10. Relative variation of holding and latching current versus junction temperature (typical values)** 

**==> picture [433 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 dV/dt [Tj ] / dV/dt [Tj =150 °C] 2.0 IH, IL [Tj ] / IH, IL [Tj =25 °C]<br>VD = VR = 402 V ;  150°C<br>4 VD = VR = 536 V ;  125°C IH<br>INU TP) 1.5 Qe ey<br>IL<br>3<br>1.0<br>HANI | SECC<br>2<br>0.5<br>1<br>Feces | EEPRBED<br>T (°C)j<br>025 PEELE 50 75 100 125T (°C)j 150 | 0.0-50 GEES -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


4/9 DocID025736 Rev 2 ~~YS 77~~ 

**Characteristics** 

**T810T-8FP** 

**Figure 11. Relative variation of critical rate of decrease of main current (di/dt)c versus reapplied (dV/dt)c (typical values)** 

**Figure 12. Relative variation of critical rate of decrease of main current (di/dt)c versus junction temperature (typical values)** 

**==> picture [434 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c (dI/dt)C [Tj] / (dI/dt)c [Tj=150 °C]<br>3 8<br>T j = 150°C 7 (dV/dt)c = 10 V/µs<br>6<br>2<br>NUM\ crconn |  ESSE 5 SE<br>4<br>NTE ENT ETT esPSEes<br>3<br>1 Tj = 125 PPT °C ETT pty pp [eee]<br>2<br>AL EET EE jj fff {oP<br>0 PLE ET (dV/dt)c (V/µs) 10 PtSSStT ff ftPNY T (°C)j oo<br>0.1 1.0 10.0 100.0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values)** 

**==> picture [214 x 141] intentionally omitted <==**

**----- Start of picture text -----**<br>
IDRM   RRM, I @ [T ; Vj DRM, VRRM     DRM   RRM] / I , I<br>1.0E+00<br>==SaeeS V DRM =V RRM =800 V ===<br>1.0E-01<br>VDRM=VRRM=600 V<br>1.0E-02<br>=er ean<br>VDRM=VRRM=400 V<br>=a<br>1.0E-03 *IDRM, IRRM @:<br>[Tjmax = 125 °C; 800 V]<br>1.0E-04 easeFS [Tjmax = 150 °C; 600 V] —— T (°C) j<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


DocID025736 Rev 2 5/9 ~~Bo~~ 

**Package information** 

**T810T-8FP** 

## **2 Package information** 

- Epoxy meets UL94, V0 

- Lead-free package 

- Recommended torque: 0.4 to 0.6 N·m 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com._ ECOPACK[®] is an ST trademark. 

## **Figure 14. TO-220FPAB dimension definitions** 

**==> picture [193 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>H B<br>Dia<br>L6<br>L2 L7<br>L3<br>L5<br>D<br>F1<br>L4<br>F2<br>‘i F E<br>G1<br>G<br>**----- End of picture text -----**<br>


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DocID025736 Rev 2 

**T810T-8FP** 

**Package information** 

**Table 6. TO-220FPAB dimension values** 

||**Table 6. TO-220FPAB dimension values**|**Table 6. TO-220FPAB dimension values**|**Table 6. TO-220FPAB dimension values**|**Table 6. TO-220FPAB dimension values**|
|---|---|---|---|---|
|**Ref.**<br>~~a~~|**Dimensions**<br>~~a~~||||
||**Millimeters**<br>~~a~~<br>~~ee~~||**Inches**<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
||**Min.**<br>~~ee~~|**Max.**<br>~~ee~~|**Min.**<br>~~ee~~<br>~~ee~~|**Max.**<br>~~ee~~<br>~~ee~~|
|A<br>~~a~~<br>~~ee~~|4.4|4.6|0.173<br>~~ee~~|0.181<br>~~ee~~|
|B<br>~~a~~<br>~~ee~~|2.5|2.7|0.098<br>~~ee~~|0.106<br>~~ee~~|
|D<br>~~ee~~<br>~~a~~|2.5|2.75|0.098|0.108|
|E<br>~~a~~|0.45|0.70|0.018|0.027|
|F<br>~~a~~|0.75<br>|1<br>|0.030<br>|0.039<br>|
|F1<br>~~ss~~|1.15<br>~~ss~~|1.70<br>~~ss~~|0.045<br>~~ss~~|0.067<br>~~ss~~|
|F2<br>~~ss~~<br>~~ee~~|1.15<br>~~ss~~|1.70<br>~~ss~~|0.045<br>~~ss~~|0.067<br>~~ss~~|
|G<br>~~ee~~|4.95|5.20|0.195|0.205|
|G1<br>~~ee~~<br>~~a~~|2.4|2.7|0.094|0.106|
|H<br>~~a~~|10|10.4|0.393|0.409|
|L2<br>~~a~~|16 Typ.||0.63 Typ.||
|L3<br>~~a~~|28.6<br>|30.6<br>|1.126<br>|1.205<br>|
|L4<br>~~ss~~<br>~~ee~~|9.8<br>~~ss~~|10.6<br>~~ss~~|0.386<br>~~ss~~|0.417<br>~~ss~~|
|L5<br>~~ee~~|2.9|3.6|0.114|0.142|
|L6<br>~~ee~~<br>~~a~~|15.9|16.4|0.626|0.646|
|L7<br>~~a~~|9.00|9.30|0.354|0.366|
|Dia.<br>~~a~~|3.00|3.20|0.118|0.126|



DocID025736 Rev 2 

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**Ordering information** 

**T810T-8FP** 

**3 Ordering information Figure 15. Ordering information scheme** T 8      10 T -    8       FP Triac Current 8 = 8 A Gate sensitivity 10 = 10 mA Specific application T = Increased (dI/dt)c and dV/dt producing reduced ITSM Voltage (VDRM, VRRM) 8 = 800 V Package FP = TO-220FPAB ~~=~~ **Table 7. Ordering information Order code Marking Package Weight Base qty Delivery mode** T810T-8FP T810T-8FP TO-220FPAB 2.0 g 50 Tube **4 Revision history Table 8. Document revision history Date Revision Changes** 05-Feb-2014 1 Initial release. 12-Feb-2015 2 Updated _Features_ and _Table 2_ . ~~rs~~ 

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**T810T-8FP** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

DocID025736 Rev 2 

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## Links

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- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/t810t-8fp/triac-8a-800v-to-220fpab/dp/3106004)
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