# TRIAC, 6A, 800V, TO-220AB-3

![Product image](https://novapart.co/image/farnell:2837951/)

**URL**: https://novapart.co/products/T635T-8T/triac-6a-800v-to-220ab-3
**SKU**: T635T-8T
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Thyristors || Thyristors - TRIACs
**Price**: €0.6200
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | Snubberless Series |
| Peak Gate Power | 1W |
| Triac Case Style | TO-220AB |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 40mA |
| On State Rms Current | 6A |
| Peak On State Voltage | 1.55V |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 45A |
| Peak Repetitive Off State Voltage | 800V |
| Gate Trigger Current Max (Qi), Igt | 35mA |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2837951/)

## **T635T-8T** 

## 6 A Snubberless™ Triac 

− **Datasheet production data** 

## **Features** 

**==> picture [82 x 204] intentionally omitted <==**

**----- Start of picture text -----**<br>
A2<br>G<br>A1<br>A2<br>G<br>A2<br>A1<br>TO-220AB<br>(T635T-8T)<br>**----- End of picture text -----**<br>


- Medium current Triac 

- High static and dynamic commutation 

- Three quadrants 

- ECOPACK[®] 2 compliant component 

## **Applications** 

- General purpose AC line load switching 

- Motor control circuits 

- Small home appliances 

- Lighting 

- Inrush current limiting circuits 

- Overvoltage crowbar protection 

## **Description** 

**Table 1. Device summary** 

|**Symbol**|**Value**|**Unit**|
|---|---|---|
|IT(rms)|6|A|
|VDRM, VRRM|800|V|
|VDSM, VRSM|900|V|
|IGT|35|mA|



Available in through-hole package, the T635T-8T Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber circuit when the limits defined in this datasheet are respected. 

TM: Snubberless is a trademark of STMicroelectronics 

July 2014 

DocID024571 Rev 3 

1/9 

This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**T635T-8T** 

## **1 Characteristics** 

**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)** 

|**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)**|**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)gs (Tj = 25 °C unless otherwise stated)s (Tj = 25 °C unless otherwise stated)(Tj = 25 °C unless otherwise stated)Tj = 25 °C unless otherwise stated)j = 25 °C unless otherwise stated)**|**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)gs (Tj = 25 °C unless otherwise stated)s (Tj = 25 °C unless otherwise stated)(Tj = 25 °C unless otherwise stated)Tj = 25 °C unless otherwise stated)j = 25 °C unless otherwise stated)**|**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)gs (Tj = 25 °C unless otherwise stated)s (Tj = 25 °C unless otherwise stated)(Tj = 25 °C unless otherwise stated)Tj = 25 °C unless otherwise stated)j = 25 °C unless otherwise stated)**|**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)gs (Tj = 25 °C unless otherwise stated)s (Tj = 25 °C unless otherwise stated)(Tj = 25 °C unless otherwise stated)Tj = 25 °C unless otherwise stated)j = 25 °C unless otherwise stated)**<br>~~ee~~|**Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)gs (Tj = 25 °C unless otherwise stated)s (Tj = 25 °C unless otherwise stated)(Tj = 25 °C unless otherwise stated)Tj = 25 °C unless otherwise stated)j = 25 °C unless otherwise stated)**<br>~~ee~~|
|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|||**Value**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~<br>~~ee~~|
|IT(rms)|On-state rms current (full sine wave)<br>~~pf~~||Tc= 135 °C<br>~~pf~~|6<br>~~ee ~~<br>~~pf~~|A<br> ~~ee~~|
|ITSM<br>~~a~~<br>~~a~~|Non repetitive surge peak on-state<br>current (full cycle, Tjinitial = 25 °C)<br>~~pf~~<br>~~a~~<br>|F = 50 Hz<br>~~pf~~<br>~~a~~<br>~~a~~<br>|t = 20 ms<br>~~pf~~<br>~~a~~<br>~~ee~~<br>|45<br>~~pf~~<br>~~a~~<br>~~eee~~<br>|A<br>~~a~~<br>|
|||F = 60 Hz<br>~~a~~<br>~~a~~<br>|t = 16.7 ms<br>~~a~~<br>~~ee~~<br>|47<br>~~a~~<br>~~eee~~<br>||
|I²t<br>~~a~~|I²t value for fusing, Tjinitial = 25 °C<br>~~a~~<br>||tp= 10 ms<br>~~ee~~<br>|13<br>~~eee~~<br>|A²s<br>|
|VDRM,<br>VRRM<br>~~eo~~|Repetitive surge peak off-state voltage<br>~~eo~~||Tj= 150 °C<br>~~eo~~|600<br>~~eo~~|V<br>~~eo~~|
||||Tj= 125 °C<br>~~eo~~|800<br>~~eo~~||
|VDSM,<br>VRSM<br>~~a~~|Non repetitive surge peak off-state voltage<br>~~ee~~||tp= 10 ms<br>~~ee~~|900<br>~~ee~~|V<br>~~ee~~|
|dI/dt|Critical rate of rise of on-state<br>current IG= 2 x IGT, tr ≤100 ns|F = 100 Hz||100|A/µs|
|IGM<br>~~a~~|Peak gate current<br>|tp= 20 µs<br>|Tj= 150 °C<br>|4<br>|A<br>|
|PG(AV)<br><br>~~a~~|Average gate power dissipation<br><br>||Tj= 150 °C<br><br>|1<br><br>~~ee~~<br>|W<br><br>|
|Tstg<br>Tj<br>~~ee~~<br>~~a~~|Storage junction temperature range<br>Operating junction temperature range<br>~~ee~~<br>|||- 40 to + 150<br>- 40 to + 150<br>~~ee~~<br>~~ee~~<br>|°C<br>~~ee~~<br>|
|TL<br>~~a~~|Maximum lead temperature for soldering during 10 s<br>|||260<br>~~ee~~<br>|°C<br>|



**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)** 

|**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)**<br>**Symbol**<br>~~a~~|**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)(Tj = 25 °C, unless otherwise stated)Tj = 25 °C, unless otherwise stated)j = 25 °C, unless otherwise stated)**<br>**Test conditions**<br>~~a~~|**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)(Tj = 25 °C, unless otherwise stated)Tj = 25 °C, unless otherwise stated)j = 25 °C, unless otherwise stated)**<br>**Quadrant**<br>~~a~~|**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)(Tj = 25 °C, unless otherwise stated)Tj = 25 °C, unless otherwise stated)j = 25 °C, unless otherwise stated)**<br>~~a~~|**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)(Tj = 25 °C, unless otherwise stated)Tj = 25 °C, unless otherwise stated)j = 25 °C, unless otherwise stated)**<br>**Value**<br>~~a~~|**Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise stated)(Tj = 25 °C, unless otherwise stated)Tj = 25 °C, unless otherwise stated)j = 25 °C, unless otherwise stated)**<br>**Unit**<br>~~a~~|
|---|---|---|---|---|---|
|IGT<br>(1)<br>~~a~~|VD= 12 V, RL= 30Ω<br>~~a~~|I - II - III<br>~~a~~|Min.<br>~~a~~|1.75<br>~~a~~|mA<br>~~a~~|
||||Max.<br>~~a~~<br>~~|~~|35<br>~~a~~<br>~~|~~||
|VGT<br>~~a~~|VD= 12 V, RL= 30Ω|I - II - III|Max.|1.3|V|
|VGD<br>~~a~~|VD= VDRM, RL= 3.3 kΩ, Tj= 150 °C|I - II - III|Min.|0.2|V|
|IH<br>(1)<br>~~a~~|IT= 500 mA||Max.|40|mA|
|IL<br>~~——~~|IG= 1.2 IGT<br>~~———e~~|I - III|Max.<br>~~ee~~|60<br>~~ee~~|mA<br>~~ee~~|
|||II<br>~~ee~~<br>~~—e~~|Max.<br>~~ee~~<br>~~ee~~<br>~~—e~~|65<br>~~ee~~<br>~~ee~~<br>~~—e~~|mA<br>~~ee~~<br>~~ee~~<br>~~—e~~|
|dV/dt<br>(1)<br>~~——~~|VD= 536 V, gate open<br>~~———e~~|Tj= 125 °C<br>~~—e~~|Min.<br>~~ee~~<br>~~—e~~<br>~~ee~~<br>~~a~~|2000<br>~~ee ~~<br>~~—e~~|V/µs<br> ~~ee~~<br>~~—e~~|
||VD= 402 V, gate open<br>~~———e~~<br>~~ee~~|Tj= 150 °C<br>~~—e~~<br>~~ee~~<br>~~a~~||1000<br>~~—e~~<br>~~ee~~<br>~~a~~|V/µs<br>~~—e~~<br>~~ee~~<br>~~a~~|
|(dI/dt)c<br>(1)<br>~~——~~<br>~~a~~|Without snubber (dV/dt)c≥20 V/µs)<br>~~———e~~<br>~~a~~|Tj= 125 °C<br>~~—e~~<br>~~a~~<br>~~a~~|Min.<br>~~—e~~<br>~~a~~<br>~~a~~|6<br>~~—e~~<br>~~a~~<br>~~a~~|A/ms<br>~~—e~~<br>~~a~~<br>~~a~~|
|||Tj= 150 °C<br>~~a~~<br>~~a~~||3<br>~~a~~<br>~~a~~<br>~~eee~~||



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**Characteristics** 

**T635T-8T** 

**Table 4. Static characteristics** 

||**Table 4. Static characteristics**|**Table 4. Static characteristics**|**Table 4. Static characteristics**|||
|---|---|---|---|---|---|
|**Symbol**|**Test conditions**|||**Value**<br>**Unit**|**Unit**|
|VT<br>(1)|ITM= 8.5 A, tp= 380 µs|Tj= 25 °C|Max.|1.55|V|
|Vt0<br>(1)|Threshold voltage|Tj= 150 °C|Max.|0.85|V|
|Rd<br>(1)|Dynamic resistance|Tj= 150 °C|Max.|75|mΩ|
|IDRM<br>IRRM|VDRM= VRRM= 800 V|Tj= 25 °C|Max.|5<br>0.6<br>2.0|µA|
|||Tj= 125 °C|||mA|
||VDRM= VRRM= 600 V|Tj= 150 °C|Max.|||



1. For both polarities of A2 referenced to A1 

**Table 5. Thermal resistance** 

||**Table 5. Thermal resistance**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**<br>**Unit**|**Unit**|
|Rth(j-c)|Junction to case (AC)|2.1<br>°C/W|°C/W|
|Rth(j-a)|Junction to ambient|60<br>°C/W|°C/W|



**Figure 1. Maximum power dissipation versus on-state rms current (full cycle)** 

**Figure 2. On-state rms current versus case temperature (full cycle)** 

**==> picture [444 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
8 P(W) 7 IT(RMS)(A)<br>=180°<br>=180° 6<br>6 +.) ttt ttt)4 CEPTtt<br>5<br>—-H--HEH+e< | FEE<br>4<br>4 EERE EE |  RAR<br>3<br>Feet} EEE<br>2 PeLeIePeereers| 2 LETT<br>180°<br>1<br>0 heer IT(RMS)(A) 0 CEEET ET TC(°C) T T T y<br>0 Peg 1 [te)] 2 3 TY 4 5 ms 6 0 Pi 25 ttt 50 TT 75 Tt 100  Tt 125 yy 150<br>**----- End of picture text -----**<br>


**Figure 3. On-state rms current versus ambient temperature (free air convection)** 

**Figure 4. Relative variation of thermal impedance versus pulse duration** 

**==> picture [444 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.0 IT(RMS)(A) 1.0E+00 K = [Zth / Rth]<br>= 180° Zth(j-c)<br>2.5<br>2.0 Z th(j-a)<br>1.5 1.0E-01<br>=EEBRSEEEEES | CUMICAC wT<br>1.00.5 SESE EES | AIEEE| |<br>0.0 aeor Ta(°C) 1.0E-02 ||| TH||oH tp (s)<br>0 25 50 75 100 125 150 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03<br>**----- End of picture text -----**<br>


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**Characteristics** 

**T635T-8T** 

**Figure 5. On-state characteristics (maximum values)** 

**Figure 6. Surge peak on-state current versus number of cycles** 

**==> picture [445 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 ITM(A) 50 ITSM(A)<br>45<br>=== SSSSSEEESSSS | CTL Cum<br>40 t = 20 ms<br>35 Non repetitive One cycle<br>FPeerreeeeeereAI VtoTj= 0.85 Vmax : | 30 Cott Tj initial=25 °C So<br>10 Rd = 75 m 25<br>Sl ut ail l<br>20<br>SESS | 15 Hetilit<br>Tj = 150 °C<br>10<br>BO EE T j = 25  SSSEEEEEEESS °C SESS | 5 Repetitive CIM eeeSh<br>1 P| | jaf | PL| { |]{tt po VTM(V) tt 0 PR TC= 135 °C 0 A0 Number of cycles |<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 10 100 1000<br>**----- End of picture text -----**<br>


**Figure 7. Non repetitive surge peak on-state current and corresponding values of I[2] t** 

**Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values)** 

**==> picture [445 x 139] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 ITSM(A), I²t (A²s) Tj initial=25  ° C 2.0 IGT[Tj] / IGT[Tj = 25 °C], VGT[Tj] / VGT[Tj = 25 °C]<br>dI/dt limitation: 100 A/µs<br>IGT Q1-Q2<br>ITSM 1.5 IGT Q3<br>COI<br>eea. soy<br>100 UI EINon || 1.0 FSSSS VGT<br>0.5<br>Sinusoidal pulse with I²t<br>10 S width tp<10 ms H tp(ms) H | 0.0 ESS Tj(°C)<br>0.01 EE 0.10 1.00 10.00 | -50 ES! -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**==> picture [447 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 9. Relative variation of static dV/dt  Figure 10. Relative variation of holding current<br>immunity versus junction temperature (typical  and latching current versus junction<br>values) temperature (typical values)perature (typical values)erature (typical values)(typical values)typical values)ypical values)ical values))<br>5 dV/dt [Tj] / dV/dt [Tj = 150 °C] 2.0 IH, IL[Tj] / IH, IL[Tj = 25 °C]<br>pt VD=VR=402V<br>(dV/dt) > 5 kV/µs<br>4<br>CELL 1.5 IH TTT<br>3 ELK IL<br>Pi 1.0 OSE<br>2<br>PEERS) 0.5 CCE<br>1<br>Tj (°C) Tj(°C)<br>0 0.0<br>25 FEEEEECESS) 50 75 100 125 150 | -50 EECEEF -25 0 25 50 75  PS 100 125 150<br>**----- End of picture text -----**<br>


**Figure 10. Relative variation of holding current and latching current versus junction temperature (typical values)perature (typical values)erature (typical values)(typical values)typical values)ypical values)ical values))** 

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**Characteristics** 

**T635T-8T** 

**Figure 11. Relative variation of critical rate of decrease of main current (dI/dt)c versus reapplied (dV/dt)c (typical values)** 

**Figure 12. Relative variation of critical rate of decrease of main current (dI/dt)c versus junction temperature (typical values)** 

**==> picture [444 x 137] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 (dI/dt)c [(dV/dt)] / Specified (dI/dt)c 8 (dl / dt)c [Tj] / (dl / dt)c [Tj = 150 °C]<br>Tj =150 °C<br>(TO To | 7 CEE pe<br>4<br>3 RCITeRe 0 TT | 65 To~<br>4<br>2 SE 3<br>NE on Err | PS<br>2<br>1 a | se ee<br>eee 1 So eS<br>0 rrrFA EC (dV/dt)c (V/µs) I 0 Ft | | | | ft ft ft Tj _ (°C)<br>0.1 1.0 10.0 100.0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values)** 

**==> picture [214 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0E+00 IDRM   RRM, I @ [T ]; Vj DRM, VRRM] / IDRM   RRM , I [@ [] Tjmax []][*]<br>V DRM =V RRM =800 V<br>==<br>1.0E-01 ee ee<br>i VDRM=VRRM=600 V<br>1.0E-02 iaoe<br>VDRM=VRRM=400 V<br>[| AT | ~FPTT<br>1.0E-03 *IDRM, IRRM @:<br>1.0E-04 oerT [Tjmax = 125 °C; 800 V][Tjmax = 150  ° C; 600 V] on T (°C)j<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


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**Package information** 

**T635T-8T** 

## **2 Package information** 

- Epoxy meets UL94, V0 

- Lead-free package 

- Recommended torque: 0.4 to 0.6 N·m 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

## **Figure 14. TO-220AB dimension definitions** 

**==> picture [195 x 209] intentionally omitted <==**

**----- Start of picture text -----**<br>
E A<br>Resin gate ∅ P F<br>0.5 mm max.<br>protrusion [(1)] ore a Q<br>H1<br>D D1<br>L20 L30<br>D 4<br>b1 L1 J1<br>L<br>b<br>e Resin gate c<br>0.5 mm max.<br>protrusion [(1)]<br>e1<br>(1) Resin gate position accepted in each of the two<br>position shown as well as the symmetrical opposites<br>**----- End of picture text -----**<br>


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DocID024571 Rev 3 

**T635T-8T** 

**Package information** 

**Table 6. TO-220AB dimension values** 

||**Table 6. TO-220AB dimension values**|**Table 6. TO-220AB dimension values**|**Table 6. TO-220AB dimension values**|**Table 6. TO-220AB dimension values**|
|---|---|---|---|---|
|**Ref.**<br>~~a~~|**Dimensions**<br>~~a~~||||
||**Millimeters**<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~es~~||**Inches**<br>~~a~~<br>~~ee~~<br>~~ee~~||
||**Min.**<br>~~ee~~<br>~~a~~|**Max.**<br>~~ee~~<br>~~es~~|**Min.**<br>~~ee~~<br>~~ee~~|**Max.**<br>~~ee~~<br>~~ee~~|
|A<br>~~a~~<br>~~es~~|4.40<br>~~a~~|4.60<br>~~es~~|0.17<br>~~ee~~|0.18<br>~~ee~~|
|b<br>~~a~~<br>~~es~~<br>~~es~~|0.61<br>~~a~~|0.88<br>~~es~~|0.024<br>~~ee~~|0.035<br>~~ee~~|
|b1<br>~~es~~<br>~~es~~<br>~~es~~|1.14|1.70|0.045|0.067|
|c<br>~~es~~<br>~~es~~|0.48|0.70|0.019|0.027|
|D<br>~~es~~<br>~~|~~|15.25<br>~~po~~|15.75<br>~~po~~|0.60<br>~~po~~|0.62<br>~~po~~|
|D1<br>~~|~~|1.27 typ.<br>~~po~~||0.05 typ.<br>~~po~~||
|E<br>~~| ~~<br>~~a~~|10<br> ~~po~~<br>|10.40<br>~~po~~<br>|0.39<br>~~po~~<br>|0.41<br>~~po~~<br>|
|e<br>~~Ce~~<br>~~es~~|2.40<br>~~Ce~~|2.70<br>~~Ce~~|0.094<br>~~Ce~~|0.106<br>~~Ce~~|
|e1<br>~~es~~<br>~~es~~|4.95|5.15|0.19|0.20|
|F<br>~~es~~<br>~~es~~<br>~~es~~|1.23|1.32|0.048|0.052|
|H1<br>~~es~~<br>~~es~~<br>~~es~~|6.20|6.60|0.24|0.26|
|J1<br>~~es~~<br>~~es~~<br>~~es~~|2.40|2.72|0.094|0.107|
|L<br>~~es~~<br>~~es~~|13|14|0.51|0.55|
|L1<br>~~es~~<br>~~se~~<br>~~es~~|3.50<br>~~se~~|3.93<br>~~se~~|0.137<br>~~se~~|0.154<br>~~se~~|
|L20<br>~~es~~<br>~~es~~|16.40 typ.||0.64 typ.||
|L30<br>~~es~~<br>~~es~~<br>~~es~~|28.90 typ.||1.13 typ.||
|∅P<br>~~es~~<br>~~es~~<br>~~es~~|3.75|3.85|0.147|0.151|
|Q<br>~~es~~<br>~~es~~|2.65|2.95|0.104|0.116|



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**Ordering information** 

**T635T-8T** 

|**3**|**Ordering information**|
|---|---|
||**Figure 15. Ordering information scheme**|
|**4**|**Revision history**<br>**Table 7. Ordering information**<br>**Order code**<br>**Marking**<br>**Package**<br>**Weight**<br>**Base qty**<br>**Delivery mode**<br>T635T-8T<br>T635T-8T<br>TO-220AB<br>2.0 g<br>50<br>Tube<br>**T       6      35    T   -    8       T**<br>**Triac**<br>**Current**<br>6 = 6 A<br>**Gate sensitivity**<br>35 = 35 mA<br>**Specific application**<br>T = Increased (dI/dt)c and dV/dt producing reduced ITSM<br>**Voltage (V**<br>**, V**<br>**)**<br>**DRM**<br>**RRM**<br>8 = 800 V<br>**Package**<br>T = TO-220AB<br>**Table 8. Document revision history**<br>**Date**<br>**Revision**<br>**Changes**<br>05-Aug-2013<br>1<br>Initial release.<br>01-Jul-2014<br>2<br>Updated_Table 2_.<br>28-Jul-2014<br>3<br>Updated_Table 5_.<br>~~=~~<br>~~=~~|
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**T635T-8T** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

DocID024571 Rev 3 

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