# Triac, 800 V, 6 A, TO-220FPAB, 1.3 V, 45 A, 15 mA

![Product image](https://novapart.co/image/farnell:2454732/)

**URL**: https://novapart.co/products/T610T-8FP/triac-800-v-6-a-to-220fpab-13-45-15-ma
**SKU**: T610T-8FP
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.6020
**Stock**: 10+

## Description

Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current IT(rms):6A; Triac Case Style:TO-220FPAB; Gate Trigger Current Max (QI), Igt:10mA; Gate Trigger Voltage Max Vgt:1.3V

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Triac Case Style | TO-220FPAB |
| Thyristor Mounting | Through Hole |
| Holding Current Max | 15mA |
| On State Rms Current | 6A |
| Peak On State Voltage | 1.55V |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 45A |
| Peak Repetitive Off State Voltage | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2454732/)

## **T610T-8FP** 

## 6 A logic level Triac 

− **Datasheet production data** 

## **Description** 

Available in through-hole fullpack package, the T610T-8FP Triac can be used for the on/off or phase angle control function in general purpose AC switching. This device can be directly driven by a microcontroller thanks to its 10 mA gate current requirement. Provide UL certified insulation rated at 2000 VRMS. 

**Table 1. Device summary** 

|**Symbol**|**Value**|**Unit**|
|---|---|---|
|IT(rms)|6|A|
|VDRM, VRRM|800|V|
|VDSM, VRSM|900|V|
|IGT|10|mA|



## **Features** 

- Medium current Triac 

- Three triggering quadrants Triac 

- ECOPACK[®] 2 compliant component 

- Complies with UL standards (File ref: E81734) 

- 6 A high performance Triac: 

   - High Tj family 

   - High dI/dt family 

   - High dV/dt family 

- Insulated package TO-220FPAB: 

   - Insulated voltage: 2000 VRMS 

## **Applications** 

- General purpose AC line load switching 

- Motor control circuits 

- Small home appliances 

- Lighting 

- Inrush current limiting circuits 

- Overvoltage crowbar protection 

February 2015 

DocID025568 Rev 2 

1/9 

This is information on a product in full production. 

_www.st.com_ 

**Characteristics** 

**T610T-8FP** 

## **1 Characteristics** 

## **Table 2. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)** 

|**Symbol**<br>**Parameter**<br>**Value**<br>**Unit**<br>~~ee~~|
|---|
|IT(rms)<br>On-state rms current (full sine wave)<br>Tc= 117 °C<br>6<br>A<br>ITSM<br>Non repetitive surge peak on-state<br>current (full cycle, Tjinitial = 25 °C)<br>F = 50 Hz<br>t = 20 ms<br>45<br>A<br>F = 60 Hz<br>t = 16.7 ms<br>47<br>~~ae~~~~**e**~~<br>~~e~~|
|I²t<br>I²t value for fusing, Tjinitial = 25 °C<br>tp= 10 ms<br>13<br>A²s<br>VDRM,<br>VRRM<br>Repetitive surge peak off-state voltage<br>Tj= 150 °C<br>600<br>V<br>Tj= 125 °C<br>800<br>~~afp~~|
|VDSM,<br>VRSM<br>Non repetitive surge peak off-state voltage<br>tp= 10 ms<br>900<br>V<br>~~a~~|
|dI/dt<br>Critical rate of rise of on-state<br>current IG= 2 x IGT, tr ≤100 ns<br>F = 100 Hz<br>100<br>A/µs|
|IGM<br>Peak gate current<br>tp= 20 µs<br>Tj= 150 °C<br>4<br>A<br>PG(AV)<br>Average gate power dissipation<br>Tj= 150 °C<br>1<br>W<br>Tstg<br>Tj<br>Storage junction temperature range<br>Operating junction temperature range<br>- 40 to + 150<br>- 40 to + 150<br>°C<br>TL<br>Maximum lead temperature for soldering during 10 s<br>260<br>°C<br>~~aee~~<br>~~ee~~<br>~~a~~|
|Vins<br>Insulation rms voltage, 1 minute<br>2<br>kV<br>~~a~~|
|**Table 3. Electrical characteristics(Tj = 25 °C, unless otherwise stated)**<br>**Symbol**<br>**Test conditions**<br>**Quadrant**<br>**Value**<br>**Unit**<br>IGT<br>VD= 12 V, RL= 30Ω<br>I - II - III<br>Min.<br>0.5<br>mA<br>Max.<br>10<br>~~a~~<br>~~ee~~<br>~~ee eee~~<br>~~a~~<br>~~|~~|
|VGT<br>VD= 12 V, RL= 30Ω<br>I - II - III<br>Max.<br>1.3<br>V<br>~~a~~|
|VGD<br>VD= VDRM, RL= 3.3 kΩ, Tj= 150 °C<br>I - II - III<br>Min.<br>0.2<br>V<br>~~a~~|
|IH<br>(1)<br>IT= 500 mA<br>Max.<br>15<br>mA<br>~~a O~~|
|1.<br>For both polarities of A2 referenced to A1<br>IL<br>IG= 1.2 IGT<br>I - III<br>Max.<br>20<br>mA<br>II<br>Max.<br>25<br>mA<br>dV/dt<br>(1)<br>VD= VR= 536 V, gate open<br>Tj= 125 °C<br>Min.<br>250<br>V/µs<br>VD= VR= 402 V, gate open<br>Tj= 150 °C<br>170<br>V/µs<br>(dI/dt)c<br>(1)<br>(dV/dt)c = 0.1 V/µs<br>Tj= 125 °C<br>Min.<br>5.2<br>A/ms<br>Tj= 150 °C<br>3.7<br>(dI/dt)c<br>(1)<br>(dV/dt)c = 10 V/µs<br>Tj= 125 °C<br>Min.<br>2.7<br>A/ms<br>Tj= 150 °C<br>1.2<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~——eEE~~<br>~~po~~<br>~~a~~<br>~~ee ~~ee~~ee~~<br>~~aee eeee~~|



2/9 

DocID025568 Rev 2 

**Characteristics** 

**T610T-8FP** 

**Table 4. Static characteristics** 

||**Table 4. Static characteristics**|**Table 4. Static characteristics**|**Table 4. Static characteristics**|||
|---|---|---|---|---|---|
|**Symbol**|**Test conditions**|||**Value**|**Unit**|
|VT<br>(1)|ITM= 8.5 A, tp= 380 µs|Tj= 25 °C|Max.|1.55|V|
|Vt0<br>(1)|Threshold voltage|Tj= 150 °C|Max.|0.85|V|
|Rd<br>(1)|Dynamic resistance|Tj= 150 °C|Max.|75|mΩ|
|IDRM<br>IRRM|VDRM= VRRM= 800 V|Tj= 25 °C<br>Tj= 125 °C|Max.|5|µA|
|||||0.6|mA|
||VDRM= VRRM= 600 V|Tj= 150 °C|Max.|2.0||



1. For both polarities of A2 referenced to A1 

**Table 5. Thermal resistance** 

||**Table 5. Thermal resistance**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rth(j-c)|Junction to case (AC)|4.5|°C/W|
|Rth(j-a)|Junction to ambient (DC)|60|°C/W|



**Figure 1. Maximum power dissipation versus on-state rms current (full cycle)** 

**Figure 2. On-state rms current versus case temperature (full cycle)** 

**==> picture [438 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
P(W)<br>8 7 IT(RMS)(A)<br>=180 =180°<br>6<br>6<br>BEE | 5 Se<br>Seer errr | HEE AH<br>4<br>4<br>FEE erry} AE<br>FCELLE 3 AA<br> ere} EEE EEL<br>2 PPPrrryey y y 2 EEEEA<br>180°<br>eet 1 EE<br>IT(RMS)(A) TC(°C)<br>0 eo ttPfey 0 P t} itte t t yette Ly<br>0 1 2 3 4 5 6 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 3. On-state rms current versus ambient temperature (free air convection)** 

**Figure 4. Relative variation of thermal impedance versus pulse duration** 

**==> picture [438 x 133] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.0 IT(RMS)(A) 1.0E+00 K = [Zth / Rth]<br>2.5 =180° Zth(j-c)<br>ee Se aa ee<br>2.0 Zth(j-a)<br>1.5 ee ee 1.0E-01 P IMUTIN TT TTTRTNT Il (TU<br>1.0<br>0.5<br>0.0 RSE Ta(°C) EES 1.0E-02 Ue a tp (s)<br>0 25 50 75 100 125 150 1.0E-03 1.0E-02 [1.0E-01] 1.0E+00 [1.0E+01 ] 1.0E+02 [1.0E+03]<br>**----- End of picture text -----**<br>


DocID025568 Rev 2 3/9 ~~OC~~ 

**Characteristics** 

**T610T-8FP** 

**Figure 5. On-state characteristics (maximum values)** 

**Figure 6. Surge peak on-state current versus number of cycles** 

**==> picture [439 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 ITM(A) ITSM(A)<br>50<br>ee a ee 45 o_o |<br>40<br>t = 20 ms<br>PeoPES VtoT = 0.85 Vj max : 3530 a TNon repetitive j initial=25 | °C o\9 One cycle |<br>10 Toe e e Rd = 75 m Ω | 25 ootat HH1 — SI<br>20<br>15<br>SSS Tj = 150 °C T j = 25 °C | 105 CN T Repetitive C= 117 °C<br>1 SEPT E R LIALoeY ogeeeeenne LTE LEE VTM(V) 0 OGSoiONiiierscttiesea:Se Number of cycles<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 10 100 1000<br>**----- End of picture text -----**<br>


**Figure 7. Non repetitive surge peak on-state current and corresponding values of I[2] t** 

**==> picture [209 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 ITSM(A), I²t (A²s)<br>=a dI/dt limitation: 100 A/µs a Tj initial = 25 ee ° C<br>ITSM<br>100 etna eee taal<br>Half cycle sinusoidal pulse with I²t<br>10 ST width tp < 10 ms eeeTRE tp(ms) EAE<br>0.01 0.10 1.00 10.00<br>**----- End of picture text -----**<br>


**Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values)** 

**==> picture [205 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
IGT, VGT [ Tj] / IGT ,VGT [ Tj = 25 °C []]<br>2.5<br>I GT Q1-Q2<br>2.0 I GT Q3<br>1.5 = Pt<br>1.0 V GT<br>0.5<br>0.0 e ee Tj(°C) e<br>-50 -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 9. Relative variation of static dV/dt immunity versus junction temperature (typical values)** 

**Figure 10. Relative variation of holding current and latching current versus junction temperature (typical values)** 

**==> picture [437 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 dV/dt [Tj ] / dV/dt [Tj =150 °C] 2.0 IH, IL [Tj ] / IH, IL [T j = 25°C]<br>VD = VR = 402 V ;  150°C<br>4 {NET VD = VR = 536 V ;  125°C IH<br>1.5<br>P OO } ft IL pp yy<br>3<br>1.0<br>2 PEERSFETT NU |  ESS S E<br>0.5<br>1 TPs |  LEE<br>0 PAPEETE T (°C)j 0.0 Pe Tj(°C) KL<br>25 50 75 100 125 150 |  L -50 -25 0 E 25 C 50 75 ErL 100 125 150<br>**----- End of picture text -----**<br>


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DocID025568 Rev 2 

**Characteristics** 

**T610T-8FP** 

**Figure 11. Relative variation of critical rate of Figure 12. Relative variation of critical rate of decrease of main current (dI/dt)c versus decrease of main current (dI/dt)c versus reapplied (dV/dt)c (typical values) junction temperature (typical values)** 

**==> picture [434 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
3 (dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c 8 (dI/dt)C [Tj] / (dI/dt)c [Tj=150 °C]<br>T j = 150°C 7 (dV/dt)c = 10 V/µs<br>6<br>2 RITA] SSE<br>5<br>NOTE' | 4 BEEEEETSC<br>1 Tj = 125 SSMU °C CUE T IET T TTl 3 SEEPeeee<br>2<br>1 {fff}} Pt<br>1<br>0 | (dV/dt)c (V/µs) 0 PEPETITIES to T (°C)j<br>0.1 1.0 10.0 100.0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values)** 

**==> picture [209 x 139] intentionally omitted <==**

**----- Start of picture text -----**<br>
IDRM,IRRM [Tj;V DRM,V RRM] / IDRM,IRRM<br>1.0E+00<br>VDRM = VRRM = 800 V<br>SSS ==<br>PER eee<br>1.0E-01 VDRM = VRRM = 600 V<br>aeee<br>1.0E-02<br>VDRM = VRRM = 400 V<br>1.0E-03 Se<br>Tj(°C) [T[Tj = 150j = 125 ° ° C; 800 V] ;C; 600 V]<br>1.0E-04 ee ee<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


DocID025568 Rev 2 5/9 ~~Sw———~~ 

**Package information** 

**T610T-8FP** 

## **2 Package information** 

- Epoxy meets UL94, V0 

- Lead-free package 

- Recommended torque: 0.4 to 0.6 N·m 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com._ ECOPACK[®] is an ST trademark. 

## **Figure 14. TO-220FPAB dimension definitions** 

**==> picture [193 x 205] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>H B<br>Dia<br>L6<br>L2 L7<br>L3<br>L5<br>D<br>F1<br>L4<br>F2<br>‘i F E<br>G1<br>G<br>**----- End of picture text -----**<br>


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DocID025568 Rev 2 

**T610T-8FP** 

**Package information** 

**Table 6. TO-220FPAB dimensions** 

||**Table 6. TO-220FPAB dimensions**|**Table 6. TO-220FPAB dimensions**|**Table 6. TO-220FPAB dimensions**|**Table 6. TO-220FPAB dimensions**|
|---|---|---|---|---|
|**Ref.**<br>~~a~~|**Dimensions**<br>~~a~~||||
||**Millimeters**<br>~~a~~<br>~~ee~~||**Inches**<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
||**Min.**<br>~~ee~~|**Max.**<br>~~ee~~|**Min.**<br>~~ee~~<br>~~ee~~|**Max.**<br>~~ee~~<br>~~ee~~|
|A<br>~~a~~<br>~~ee~~|4.4|4.6|0.173<br>~~ee~~|0.181<br>~~ee~~|
|B<br>~~a~~<br>~~ee~~|2.5|2.7|0.098<br>~~ee~~|0.106<br>~~ee~~|
|D<br>~~ee~~<br>~~a~~|2.5|2.75|0.098|0.108|
|E<br>~~a~~|0.45|0.70|0.018|0.027|
|F<br>~~a~~|0.75<br>|1<br>|0.030<br>|0.039<br>|
|F1<br>~~ss~~|1.15<br>~~ss~~|1.70<br>~~ss~~|0.045<br>~~ss~~|0.067<br>~~ss~~|
|F2<br>~~ss~~<br>~~ee~~|1.15<br>~~ss~~|1.70<br>~~ss~~|0.045<br>~~ss~~|0.067<br>~~ss~~|
|G<br>~~ee~~|4.95|5.20|0.195|0.205|
|G1<br>~~ee~~<br>~~a~~|2.4|2.7|0.094|0.106|
|H<br>~~a~~|10|10.4|0.393|0.409|
|L2<br>~~a~~|16 Typ.||0.63 Typ.||
|L3<br>~~a~~|28.6<br>|30.6<br>|1.126<br>|1.205<br>|
|L4<br>~~ss~~<br>~~ee~~|9.8<br>~~ss~~|10.6<br>~~ss~~|0.386<br>~~ss~~|0.417<br>~~ss~~|
|L5<br>~~ee~~|2.9|3.6|0.114|0.142|
|L6<br>~~ee~~<br>~~a~~|15.9|16.4|0.626|0.646|
|L7<br>~~a~~|9.00|9.30|0.354|0.366|
|Dia.<br>~~a~~|3.00|3.20|0.118|0.126|



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**Ordering information** 

**T610T-8FP** 

**3 Ordering information Figure 15. Ordering information scheme T       6      10    T   -    8       FP Triac Current** 6 = 6 A **Gate sensitivity** 10 = 10 mA **Specific application** T = Increased (dI/dt)c and dV/dt producing reduced ITSM **Voltage (VDRM, VRRM)** 8 = 800 V **Package** FP = TO-220FPAB =] **Table 7. Ordering information Order code Marking Package Weight Base qty Delivery mode** T610T-8FP T610T-8FP TO-220FPAB 2.0 g 50 Tube 

## **4 Revision history** 

|**Date**<br>~~rs~~|**Revision**<br>~~rs~~|**Changes**<br>~~rs~~|
|---|---|---|
|05-Feb-2014<br>~~rs~~|1<br>~~rs~~|Initial release.<br>~~rs~~|
|12-Feb-2015<br>~~rs~~|2<br>~~rs~~|Updated_Features_and_Table 2_.<br>~~rs~~|



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**T610T-8FP** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2015 STMicroelectronics – All rights reserved 

DocID025568 Rev 2 

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