# Triac, 800 V, 12 A, TO-263 (D2PAK), 1.3 V, 90 A, 40 mA

![Product image](https://novapart.co/image/farnell:3105997/)

**URL**: https://novapart.co/products/T1235T-8G-TR/triac-800-v-12-a-to-263-d2pak-13-90-40-ma
**SKU**: T1235T-8G-TR
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.2310
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Product Range | Snubberless |
| Triac Case Style | TO-263 (D2PAK) |
| Thyristor Mounting | Surface Mount |
| Holding Current Max | 40mA |
| On State Rms Current | 12A |
| Peak On State Voltage | 1.6V |
| Gate Trigger Voltage Max | 1.3V |
| Operating Temperature Max | 150°C |
| Peak Non Repetitive Surge Current | 90A |
| Peak Repetitive Off State Voltage | 800V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3105997/)

## **T1235T-8G** 

## 12 A Snubberless™ Triac 

Datasheet -production data 

## **Description** 

**==> picture [93 x 119] intentionally omitted <==**

**----- Start of picture text -----**<br>
A2<br>A2<br>A1<br>G<br>D²PAK<br>**----- End of picture text -----**<br>


## **Features** 

- High static dV/dt 

Available in SMD, the T1235T-8G Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber RC circuit when the limits defined are respected. 

D²PAK package is UL94-V0 flammability resin compliance. 

Package environmentally friendly Ecopack[®] 2 graded (RoHS and Halogen Free compliance). 

Snubberless™ is a trademark of STMicroelectronics. 

**Figure 1: Functional diagram** 

- High dynamic turn-off commutation (dl/dt)c 

- 150 °C maximum Tj 

- Three quadrants 

- Surge capability VDSM, VRSM = 900 V 

## **Benefits** 

- High immunity to turn-on thanks to high static dV/dt 

- Better turn-off in high temperature environments thanks to (dI/dt)c 

- Increase of thermal margin due to extended working Tj up to 150 °C 

- Good thermal resistance due to non-insulated tab 

## **Applications** 

- General purpose AC line load switching 

- Motor control circuits 

- Home appliances 

- Heating 

- Lighting 

**==> picture [140 x 100] intentionally omitted <==**

**----- Start of picture text -----**<br>
A2<br>A2: Anode2<br>A1: Anode1<br>G: Gate<br>G<br>A1<br>**----- End of picture text -----**<br>


**Table 1: Device summary** 

|**Symbol**|**Value**|**Unit**|
|---|---|---|
|IT(RMS)|12|A|
|VDRM/VRRM|800|V|
|VDSM/VRSM|900|V|
|IGT|35|mA|



- Inrush current limiting circuits 

- Overvoltage crowbar protection 

This is information on a product in full production. 

December 2017 

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_www.st.com_ 

**Characteristics** 

**T1235T-8G** 

## **1 Characteristics** 

**Table 2: Absolute maximum ratings (limiting values)** 

|**Symbol**|**Parameter**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IT(RMS)|RMS on-state current (full sine wave)||Tc= 124 °C|12|A|
|ITSM|Non repetitive surge peak on-state current,<br>Tjinitial = 25 °C||tp= 16.7 ms|95|A|
||||tp= 20 ms|90||
|I2t|I2t value for fusing||Tjinitial = 25 °C|54|A2s|
|dl/dt|Critical rate of rise of on-state current,<br>IG= 2 x IGT, tr ≤ 100 ns||f = 100 Hz|100|A/µs|
|VDRM/VRRM|Repetitive peak off-state voltage||Tj= 150 °C|600|V|
||||Tj= 125 °C|800|V|
|VDSM/VRSM|Non Repetitivepeak off-state voltage||tp= 10 ms|900|V|
|IGM|Peakgate current|tp= 20µs|Tj= 150 °C|4|A|
|PG(AV)|Averagegatepower dissipation||Tj= 150 °C|1|W|
|Tstg|Storagejunction temperature range|||-40 to +150|°C|
|Tj|Operating junction temperature range|||-40 to +150|°C|



**Table 3: Electrical characteristics (Tj = 25 °C, unless otherwise specified)** 

|**Symbol**|**Testconditions**|**Quadrants; Tj**||**Value**|**Unit**|
|---|---|---|---|---|---|
|IGT|VD= 12 V, RL= 33 Ω|I - II - III|Min.|1.75|mA|
||VD= 12 V, RL= 33 Ω|I - II - III|Max.|35|mA|
|VGT|VD= 12 V, RL= 33 Ω|I - II - III|Max.|1.3|V|
|VGD|VD= VDRM, RL= 3.3 kΩ, Tj= 150 °C|I - II - III|Min.|0.2|V|
|IL|IG= 1.2 x IGT|I - III|Max.|60|mA|
||IG= 1.2 x IGT|II|Max.|80|mA|
|IH_(1)_|IT= 500 mA,gate open||Max.|40|mA|
|dV/dt_(1)_|VD= 536 V,gate open|Tj= 125 °C|Min.|2000|V/µs|
||VD= 402 V,gate open|Tj= 150 °C|Min.|1000|V/µs|
|(dl/dt)c_(1)_|Without snubber, (dV/dt)c > 20 V/µs|Tj= 125 °C|Min.|12|A/ms|
|||Tj= 150 °C|Min.|6|A/ms|



## **Notes:** 

(1)For both polarities of A2 referenced to A1. 

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**Characteristics** 

## **Table 4: Static characteristics** 

|**Symbol**|**Test conditions**|**Tj**||**Value**|**Unit**|
|---|---|---|---|---|---|
|VTM_(1)_|IT= 17 A, tp= 380 µs|25 °C|Max.|1.6|V|
|VTO_(1)_|Threshold on-state voltage|150 °C|Max.|0.85|V|
|RD_(1)_|Dynamic resistance|150 °C|Max.|50|mΩ|
|IDRM/IRRM|VDRM= VRRM= 800 V|25 °C|Max.|5|µA|
|||125°C||1|mA|
||VDRM= VRRM= 600 V|150 °C|Max.|3.1|mA|



## **Notes:** 

(1)For both polarities of A2 referenced to A1. 

**Table 5: Thermal resistance** 

|**Symbol**|**Parameter**|**Parameter**||**Value**|**Unit**|
|---|---|---|---|---|---|
|Rth(j-c)|Junction to case (AC)|D²PAK|Max.|1.6|°C/W|



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**Characteristics** 

**T1235T-8G** 

## **1.1 Characteristics (curves)** 

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Figure 2: Maximum power dissipation versus on- Figure 3: On-state RMS current versus case<br>state RMS current  temperature<br>P(W) IT(RMS)(A)<br>18 16<br>16 a ee α = 180° | α = 180°<br>SHES |<br>14 GGpfTO 12 ,<br>12<br>SESS SE<br>108 eeee ee oe ot 8 \<br>6 a<br>a Gs ee> 4<br>4<br>2 eea 180° Tc(°C) \<br>IT(RMS)(A) 0<br>0 Sessa) | 0 LTT 25 50 75 TTT 100 125 150<br>0 2 4 6 8 10 12<br>**----- End of picture text -----**<br>


**Figure 4: On-state RMS current versus ambient temperature (free air convection)** 

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Figure 5: Relative variation of thermal impedance<br>temperature (free air convection)  versus pulse duration<br>IT(RMS)(A)<br>4.0 K = [Zth/Rth]<br>a A 1.0E+00 ———————————————<br>3.5 α = 180<br>D [2] PAK Z th(j-c)<br>3.0 Scu = 1 cm [2]<br>eo Epoxy PCB FR4 copper thickness = 35 µm r++ em a VV<br>2.5 SS cit<br>2.01.5 esONSO 1.0E-01 aSereee eatee eeeeett eeeaet aSHE rE<br>1.0<br>ee Fern - ee CH CeroCC<br>0.5 a LETTE TRAIT (TATE ETE ETI PT TT<br>0.0 ee Ta(°C) EES 1.0E-02 UVM UIT TTSU7MN tp(s)<br>RTS UTNE CI<br>0 25 50 75 100 125 150 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03<br>**----- End of picture text -----**<br>


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Figure 6: Relative variation of gate trigger voltage  Figure 7: Relative variation of holding current and<br>and current versus junction temperature  latching current versus junction temperature<br> (typical values)  (typical values)<br>IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C] IH,IL [Tj] / IH,IL [Tj = 25 °C]<br>2.0 Ns ee 2.0<br>1.5 IGT Q1-Q2 1.5<br>oe Pot | |<br>SN a ee<br>1.0 ir ee ee ee VGT Q1-Q2-Q3 1.0<br>IL<br>0.5 a a a a IGT Q3 0.5<br>Tj (°C) Tj (°C) IH<br>0.0 | te | fC ppeeFS 0.0 FTee ee PtFoto<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


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**Characteristics** 

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**----- Start of picture text -----**<br>
Figure 8: Surge peak on-state current versus  Figure 9: Non repetitive surge peak on-state<br>number of cycles  current for a sinusoidal pulse with width tp < 10 ms<br>ITSM(A) ITSM(A)<br>100 10000<br>dI/dt limitation: T initial=25°Cj<br>100A/µs<br>t=20ms<br>Non repetitive� O ne cycle<br>Tj initial = 25 °C 1000<br>50<br>Repetitive� 100<br>T c = 124°C<br>Number of cycles 10 t p (ms)<br>0<br>0.01 0.10 1.00 10.00<br>1 10 100 1000<br>Figure 10: On-state characteristics  Figure 11: Relative variation of critical rate of<br> (maximum values)  decrease of main current versus junction<br>temperature<br>(dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]<br>ITM(A)<br>14<br>100<br>13<br>12<br>T j  = 25 °C 11<br>10<br>T j  = 150 °C 9<br>8<br>10 7<br>6<br>5<br>4<br>Tj max. 3<br>VTM(V) V Rdto = = 50 0.85 mΩ V 21 Tj(°C)<br>1<br>0<br>0 1 2 3 4 5 25 50 75 100 125 150<br>Figure 12: Relative variation of static dV/dt  Figure 13: Relative variation of leakage current<br>immunity versus junction temperature  versus junction temperature for different values of<br>blocking voltage<br>IDRM, IRRM at [Tj] / IDRM, IRRM at [Tj max.]*<br>dV/dt [Tj] / dV/dt [Tj = 150 °C]<br>6 1.0E+00<br>VD = VR = 402 V<br>5<br>VDRM = VRRM = 800 V<br>4 1.0E-01<br>3<br>VDRM = VRRM = 600 V<br>2 1.0E-02<br>1<br>*[Tj max = 125 °C; VDRM, VRRM = 800 V]<br>Tj(°C) [Tj max = 150 °C; VDRM, VRRM = 600 V] Tj(°C)<br>0 1.0E-03<br>25 50 75 100 125 150 25 50 75 100 125 150<br>DocID031279 Rev 1  5/10<br>**----- End of picture text -----**<br>


**T1235T-8G** 

**Package** information 

## **2 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

- ECOPACK[®] 2 compliant 

- Lead-free package leads finishing 

- Molding compound resin is halogen-free and meets UL standard level V0 

## **2.1 D²PAK package information** 

**Figure 14: D²PAK package outline** 

**==> picture [425 x 297] intentionally omitted <==**

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**Package** information 

**Table 6: D²PAK package mechanical data** 

|**Ref.**|||**Dimensions**|**Dimensions**|||
|---|---|---|---|---|---|---|
|||**Millimeters**|||**Inches****_(1)_**||
||**Min.**|**Typ.**|**Max.**|**Min.**|**Typ.**|**Max.**|
|A|4.30||4.60|0.1693||0.1811|
|A1|2.49||2.69|0.0980||0.1059|
|A2|0.03||0.23|0.0012||0.0091|
|A3||0.25|||0.0098||
|b|0.70||0.93|0.0276||0.0366|
|b2|1.25||1.7|0.0492||0.0669|
|c|0.45||0.60|0.0177||0.0236|
|c2|1.21||1.36|0.0476||0.0535|
|D|8.95||9.35|0.3524||0.3681|
|D1|7.50||8.00|0.2953||0.3150|
|D2|1.30||1.70|0.0512||0.0669|
|e|2.54|||0.1|||
|E|10.00||10.28|0.3937||0.4047|
|E1|8.30||8.70|0.3268||0.3425|
|E2|6.85||7.25|0.2697||0.2854|
|G|4.88||5.28|0.1921||0.2079|
|H|15||15.85|0.5906||0.6240|
|L|1.78||2.28|0.0701||0.0898|
|L2|1.27||1.40|0.0500||0.0551|
|L3|1.40||1.75|0.0551||0.0689|
|R||0.40|||0.0157||
|V2|0°||8°|0°||8°|



## **Notes:** 

(1)Dimensions in inches are given for reference only 

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**Package** information 

**Figure 15: D²PAK recommended footprint (dimensions are in mm)** 

**Figure 16: D²PAK stencil definitions (dimensions are in mm)** 

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**Ordering** information 

**T1235T-8G** 

## **3 Ordering information** 

**Figure 17: Ordering information scheme** 

**==> picture [406 x 230] intentionally omitted <==**

**----- Start of picture text -----**<br>
T 12 35 T - 8 G - TR<br>Snubberless™TRIAC<br>RMS current<br>12 = 12 A<br>IGT current<br>35 = 35 mA<br>Specific application<br>T = increased (dl/dt) and dV/dt producing reduced ITSM<br>Voltage<br>8 = 800 V<br>Package<br>G = D²PAK<br>Packing<br>Blank = Tube<br>-TR = Tape and reel<br>**----- End of picture text -----**<br>


**Table 7: Ordering information** 

|**Order code**|**Marking**|**Package**|**Weight**|**Base qty.**|**Delivery mode**|
|---|---|---|---|---|---|
|T1235T-8G-TR|T1235T-8G|D²PAK|1.38 g|1000|Tape and reel|
|T1235T-8G||||50|Tube|



## **4 Revision history** 

**Table 8: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|19-Dec-2017|1|Initial release.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2017 STMicroelectronics – All rights reserved 

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