# Zener Single Diode, 33 V, 250 mW, SOT-23, 3 Pins, 150 °C, Surface Mount ![Product image](https://novapart.co/image/farnell:3607250/) **URL**: https://novapart.co/products/SZBZX84C33ET1G/zener-single-diode-33-v-250-mw-sot-23-3-pins-150-c **SKU**: SZBZX84C33ET1G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Diodes & Rectifiers || Zener Single Diodes **Price**: €0.0170 **Stock**: 10+ **Lead Time**: 92 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | SZBZX84CxxxET1G Series | | Qualification | AEC-Q101 | | Diode Mounting | Surface Mount | | Diode Case Style | SOT-23 | | Power Dissipation | 250mW | | Zener Voltage Nom | 33V | | Operating Temperature Max | 150°C | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3607250/) **Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ ## Zener Voltage Regulators ## **250 mW SOT−23 Surface Mount** ## BZX84CxxxET1G Series, SZBZX84CxxxET1G Series This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. **==> picture [38 x 27] intentionally omitted <==** **----- Start of picture text -----**
SOT−23
CASE 318
STYLE 8
**----- End of picture text -----**
**==> picture [126 x 17] intentionally omitted <==** **----- Start of picture text -----**
3 1
Cathode Anode
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## **MARKING DIAGRAM** ## **Specification Features** **==> picture [104 x 81] intentionally omitted <==** **----- Start of picture text -----**
xxx M
1
xxx = Device Code
M = Date Code*
= Pb−Free Package
**----- End of picture text -----**
- 250 mW Rating on FR−4 or FR−5 Board - Zener Breakdown Voltage Range − 2.4 V to 75 V - Package Designed for Optimal Automated Board Assembly - Small Package Size for High Density Applications - ESD Rating of Class 3 (> 16 kV) per Human Body Model - Peak Power − 225 W (8 X 20 s) (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. - SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free and are RoHS Compliant **ORDERING INFORMATION** ## **Mechanical Characteristics** |These Devices are Pb−Free and are RoHS Compliant
**Mechanical Characteristics**|**ORDERING INFORMATION**| |---|---| |**Mechanical Characteristics**
**CASE: **Void-free, transfer-molded, thermosetting plastic case
**FINISH: **Corrosion resistant finish, easily solderable
**MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:**
260C for 10 Seconds
**POLARITY: **Cathode indicated by polarity band
**FLAMMABILITY RATING: **UL 94 V−0
**MAXIMUM RATINGS**
**Rating**
**Symbol**
**Max**
**Unit**
Peak Power Dissipation @ 20 s (Note 1)
@ TL 25C
Ppk
225
W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA= 25C
Derated above 25C
Thermal Resistance, Junction−to−Ambient
PD
R JA
250
2.0
500
mW
mW/C
C/W
Total Power Dissipation on Alumina
Substrate, (Note 3) @ TA= 25C
Derated above 25C
Thermal Resistance, Junction−to−Ambient
PD
R JA
300
2.4
417
mW
mW/C
C/W
Junction and Storage Temperature Range
TJ, Tstg
−65 to
+150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
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~~es~~|**Device**
**Package**
**Shipping**†
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
**DEVICE MARKING INFORMATION**
BZX84CxxxET1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BZX84CxxxET3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
SZBZX84CxxxET1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SZBZX84CxxxET3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
NOTE: Some of the devices on this data sheet have been
**DISCONTINUED**. Please refer to the table on page 2.
~~=~~| |device. If any of these limits are exceeded, device functionality should not be|| |assumed, damage may occur and reliability may be affected.|| 1. Nonrepetitive current pulse per Figure 9. 2. FR−5 = 1.0 X 0.75 X 0.62 in. 3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina. Publication Order Number: **1**  Semiconductor Components Industries, LLC, 2003 **August, 2024 − Rev. 11** **BZX84C2V4ET1/D** **BZX84CxxxET1G Series, SZBZX84CxxxET1G Series** ## **ELECTRICAL CHARACTERISTICS** (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) |unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)|unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)F = 0.90 V Max. @ IF = 10 mA)= 0.90 V Max. @ IF = 10 mA)F = 10 mA)= 10 mA)| |---|---| |**Symbol**|**Parameter**| |VZ|Reverse Zener Voltage @ IZT| |IZT|Reverse Current| |ZZT|Maximum Zener Impedance @ IZT| |IR|Reverse Leakage Current @ VR| |VR|Reverse Voltage| |IF|Forward Current| |VF|Forward Voltage @ IF| |VZ|Maximum Temperature Coefficient of VZ| |C|Max. Capacitance @ VR= 0 and f = 1 MHz| **==> picture [156 x 170] intentionally omitted <==** **----- Start of picture text -----**
I
IF
VZ VR
V
IR VF
IZT
Zener Voltage Regulator
**----- End of picture text -----**
## **ELECTRICAL CHARACTERISTICS** (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) |**DISCONTINUED**(Note 5)|(Note 5)|||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |BZX84C2V7ET1G|BA2|2.5|2.7|2.9|100|1.9|2.4|600|3.0|3.6|50|20|1.0|−3.5|0|450| |BZX84C13ET1G|BC2|12.4|13|14.1|30|12.3|14|170|12.5|14.2|15|0.1|8.0|7.0|11|120| |BZX84C16ET1G|BC4|15.3|16|17.1|40|15.2|17|200|15.4|17.2|20|0.05|11.2|10.4|14|105| |BZX84C22ET1G|BC7|20.8|22|23.3|55|20.7|23.2|250|20.9|23.4|25|0.05|15.4|16.4|20|85| |BZX84C10ET1G|BB8|9.4|10|10.6|20|9.3|10.6|150|9.4|10.7|10|0.2|7.0|4.5|8.0|130| |BZX84C7V5ET1G|BB5|7.0|7.5|7.9|15|6.9|7.9|80|7.0|8.0|6|1.0|5.0|2.5|5.3|140| |BZX84C5V1ET1G|BB1|4.8|5.1|5.4|60|4.2|5.3|480|5.0|5.9|15|2.0|2.0|−2.7|1.2|225| |BZX84C4V3ET1G|BA7|4.0|4.3|4.6|90|3.3|4.0|600|4.4|5.1|30|3.0|1.0|−3.5|0|450| |BZX84C6V8ET1G|BB4|6.4|6.8|7.2|15|6.3|7.2|80|6.4|7.4|6|2.0|4.0|1.2|4.5|155| |BZX84C3V3ET1G|BA4|3.1|3.3|3.5|95|2.3|2.9|600|3.6|4.2|40|5.0|1.0|−3.5|0|450| |BZX84C18ET1G|BC5|16.8|18|19.1|45|16.7|19|225|16.9|19.2|20|0.05|12.6|12.4|16|100| |BZX84C5V6ET1G|BB2|5.2|5.6|6.0|40|4.8|6.0|400|5.2|6.3|10|1.0|2.0|−2|2.5|200| |BZX84C3V0ET1G|BA3|2.8|3.0|3.2|95|2.1|2.7|600|3.3|3.9|50|10|1.0|−3.5|0|450| |BZX84C8V2ET1G|BB6|7.7|8.2|8.7|15|7.6|8.7|80|7.7|8.8|6|0.7|5.0|3.2|6.2|135| |BZX84C15ET1G|BC3|13.8|15|15.6|30|13.7|15.5|200|13.9|15.7|20|0.05|10.5|9.2|13|110| |BZX84C11ET1G|BB9|10.4|11|11.6|20|10.2|11.6|150|10.4|11.8|10|0.1|8.0|5.4|9.0|130| |BZX84C20ET1G|BC6|18.8|20|21.2|55|18.7|21.1|225|18.9|21.4|20|0.05|14|14.4|18|85| |BZX84C24ET1G|BC8|22.8|24|25.6|70|22.7|25.5|250|22.9|25.7|25|0.05|16.8|18.4|22|80| |BZX84C3V6ET1G|BA5|3.4|3.6|3.8|90|2.7|3.3|600|3.9|4.5|40|5.0|1.0|−3.5|0|450| |BZX84C4V7ET1G|BA9|4.4|4.7|5.0|80|3.7|4.7|500|4.5|5.4|15|3.0|2.0|−3.5|0.2|260| |BZX84C9V1ET1G|BB7|8.5|9.1|9.6|15|8.4|9.6|100|8.5|9.7|8|0.5|6.0|3.8|7.0|130| |BZX84C3V9ET1G|BA6|3.7|3.9|4.1|90|2.9|3.5|600|4.1|4.7|30|3.0|1.0|−3.5|−2.5|450| ## **DISCONTINUED** (Note 5) **www.onsemi.com** **Share Feedback** Your Opinion Matters **2** ## **BZX84CxxxET1G Series, SZBZX84CxxxET1G Series** ## **ELECTRICAL CHARACTERISTICS** (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) |**ELECTRICAL CHARACTERISTICS**
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)A = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)= 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)F = 0.90 V Max. @ IF = 10 mA)= 0.90 V Max. @ IF = 10 mA)F = 10 mA)= 10 mA)|**ELECTRICAL CHARACTERISTICS**
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)A = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)= 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)F = 0.90 V Max. @ IF = 10 mA)= 0.90 V Max. @ IF = 10 mA)F = 10 mA)= 10 mA)| |---|---| |**Device***
**Device**
**Marking**
**VZ1 Below**
**@ IZT1 = 2 mA**
**ZZT1**
**Below**
**@ IZT1**
**=**
**2 mA**
**VZ2 Below**
**@ IZT2 =**
**0.1 mA**
**ZZT2**
**Below**
**@ IZT4**
**=**
**0.5 mA**
**VZ3 Below**
**@ IZT3 = 10 m-**
**A**
**ZZT3**
**Below**
**@ IZT3**
**=**
**10 mA**
**Max**
**Reverse**
**Leakage**
**Current**
**VZ**
**(mV/k)**
**Below**
**@ IZT1 = 2**
**mA**
**C (pF)**
**@ VR =**
**0**
**f =**
**1 MHz**
**Min**
**Nom**
**Max**
**Min**
**Max**
**Min**
**Max**
**VR**
**(V)**
**IR**
**A @**
**Min**
**Max**
BZX84C30ET1G
BD1
28
30
32
80
27.8
32
300
28.1
32.4
50
0.05
21
24.4
29.4
70
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BD5
44
47
50
170
43.7
50
375
44.1
50.5
90
0.05
32.9
42
51.8
40
BZX84C56ET1G
BD7
52
56
60
200
51.5
60
425
52.1
60.8
110
0.05
39.2
52.2
63.8
40
BZX84C62ET1G
BD8
58
62
66
215
57.4
66
450
58.2
67
120
0.05
43.4
58.8
71.6
35
BZX84C43ET1G
BK6
40
43
46
150
39.7
46
375
40.1
46.5
80
0.05
30.1
37.6
46.6
40
BZX84C36ET1G
BD3
34
36
38
90
33.8
38
350
34.1
38.4
60
0.05
25.2
30.4
37.4
70
BZX84C27ET1G
BC9
25.1
27
28.9
80
25
28.9
300
25.2
29.3
45
0.05
18.9
21.4
25.3
70
BZX84C39ET1G
BD4
37
39
41
130
36.7
41
350
37.1
41.5
70
0.05
27.3
33.4
41.2
45
BZX84C33ET1G
BD2
31
33
35
80
30.8
35
325
31.1
35.4
55
0.05
23.1
27.4
33.4
70
BZX84C12ET1G
BC1
11.4
12
12.7
25
11.2
12.7
150
11.4
12.9
10
0.1
8.0
6.0
10
130
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~~pT~~|| |BZX84C51ET1G
BD6
48
51
54
180
47.6
54
400
48.1
54.6
100
0.05
35.7
46.6
57.2
40
BZX84C75ET1G
BE1
70
75
79
255
69.4
79
500
70.3
80.2
140
0.05
52.5
73.4
88.6
35
BZX84C68ET1G
BD9
64
68
72
240
63.4
72
475
64.2
73.2
130
0.05
47.6
65.6
79.8
35
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
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~~po~~|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. * Include SZ-prefix devices where applicable. 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C 5. **DISCONTINUED:** These devices are not recommended for new design. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com. **www.onsemi.com** ~~—_—~~ **www.onsemi.com 3** **Share Feedback** Your Opinion Matters **BZX84CxxxET1G Series, SZBZX84CxxxET1G Series** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 402] intentionally omitted <==** **----- Start of picture text -----**
8 100
7 TYPICAL T C VALUES TYPICAL TC VALUES
6
5 ee
4 V Z @ I ZT V Z @ I ZT
3 ee cH
Pe | 10 |
2
a |
1 A) 4 _LTeeil
0 PA
−1 a aee
−2
−32 | SSSEEEEEEE) 3 tT 4 tT 5 | tT 6 tl 7 ht 8 9 10 11 12 1 10 FT TTT 100
VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients Figure 2. Temperature Coefficients
(Temperature Range −55  C to +150  C) (Temperature Range −55  C to +150  C)
1000 1000
TJ = 255C 75 V (MMBZ5267BLT1)
I Z = 1 mA IZ(AC) = 0.1 IZ(DC) 91 V (MMBZ5270BLT1)
f = 1 kHz
NE TTT Ly > aa
100 ENE ey 100 EEE er
5 mA
BS ree 7A 7 yy
20 mA
10 FP IW TTT 10 Pi | YS PAF |) i] do
\A7 Fg 150C 75C 25C 0C
1 1
Pe La ey a |
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V)
C)VZ, TEMPERATURE COEFFICIENT (mV/  C) 
 VZ, TEMPERATURE COEFFICIENT (mV/

)  IF, FORWARD CURRENT (mA)
ZZT, DYNAMIC IMPEDANCE (
**----- End of picture text -----**
**Figure 3. Effect of Zener Voltage on Zener Impedance** **Figure 4. Typical Forward Voltage** **www.onsemi.com** **Share Feedback** Your Opinion Matters **4** **BZX84CxxxET1G Series, SZBZX84CxxxET1G Series** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 377] intentionally omitted <==** **----- Start of picture text -----**
1000 1000
TA = 25  C
2 0 V BIAS —~---)——2 ee 100 SSS == SaaS SS See
100 1 V BIAS Sa 10 a22eae
Ma [SSC] 1
——— e e eee
;t—“—C;CCSTSC(RNNN CSYCOC‘éCWN’SCCNSCS:“ “NN NT) JJ) SNRelSRT 2OE 2eeee ee |
+150C
BIAS AT PSRPP SESENNN 0.1 == = =
50% OF V Z NOM
0.01
10
——— eea Sell 0.001 =poee +25C
ee 0.0001 —_———————— −55  C
Pr eo =,
1 ft fT TU EE TI 0.00001 =========—==>>S>=
1 10 100 0 10 20 30 40 50 60 70 80 90
VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance Figure 6. Typical Leakage Current
100 100
TA = 25C TA = 25C
=== ==ee
10 fe 10
1 fe 1
0.1 jf 0.1
| toe EET _
0.01 0 2 4 6 8 10 12 0.0110 30 50 70 90
VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V)
A)

C, CAPACITANCE (pF) IR, LEAKAGE CURRENT (
IZ, ZENER CURRENT (mA) IZ, ZENER CURRENT (mA)
**----- End of picture text -----**
**Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V)** **Figure 8. Zener Voltage versus Zener Current (12 V to 91 V)** **==> picture [237 x 173] intentionally omitted <==** **----- Start of picture text -----**
100
a tr PEAK VALUE IRSM @ 8 s |
9080 iwi PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
70 TIN Lf PEAK CURRENT DECAY = 8 s
60
| {| \t "
50 HALF VALUE IRSM/2 @ 20 s
40 oN f/| A
30
e t e P Ne eee
20
fH — = NI] | | ft
10 yo} | |he
0 P| | | |eet
0 20 40 60 80
t, TIME ( uw s)
% OF PEAK PULSE CURRENT
**----- End of picture text -----**
**Figure 9. 8**  **20 s Pulse Waveform** Uy **www.onsemi.com** **Share Feedback** Your Opinion Matters **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [326 x 39] intentionally omitted <==** **----- Start of picture text -----**
SOT−23 (TO−236) 2.90x1.30x1.00 1.90P
CASE 318
ISSUE AU
DATE 14 AUG 2024
**----- End of picture text -----**
**SCALE 4:1** **==> picture [102 x 112] intentionally omitted <==** **----- Start of picture text -----**
GENERIC
MARKING DIAGRAM*
XXXM �
�
1
XXX = Specific Device Code
M = Date Code
� = Pb−Free Package
**----- End of picture text -----**
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. ## **STYLES ON PAGE 2** Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42226B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 DATE 14 AUG 2024 ## **SOT−23 (TO−236) 2.90x1.30x1.00 1.90P** CASE 318 ISSUE AU **==> picture [489 x 178] intentionally omitted <==** **----- Start of picture text -----**
STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:
CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE
2. EMITTER 2. BASE 2. NO CONNECTION
3. COLLECTOR 3. COLLECTOR 3. CATHODE
STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:
PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE
2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE
3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE
STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:
PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE
2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE
3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE
STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:
PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE
2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE
3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION
STYLE 27: STYLE 28:
PIN 1. CATHODE PIN 1. ANODE
2. CATHODE 2. ANODE
3. CATHODE 3. ANODE
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Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 2 OF 2
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