# Power MOSFET, N Channel, 40 V, 33 A, 0.019 ohm, TO-252 (DPAK), Surface Mount ![Product image](https://novapart.co/image/farnell:3616834/) **URL**: https://novapart.co/products/SVD5806NT4G/power-mosfet-n-channel-40-v-33-a-0019-ohm-to-252 **SKU**: SVD5806NT4G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.2770 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (15-Jan-2018) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | AEC-Q101 | | Power Dissipation | 40W | | Transistor Mounting | Surface Mount | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-252 (DPAK) | | Drain Source Voltage Vds | 40V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 33A | | Drain Source On State Resistance | 0.019ohm | | Gate Source Threshold Voltage Max | 2.5V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3616834/) ## NTD5806N, NVD5806N ## Power MOSFET ## **40 V, 33 A, Single N−Channel, DPAK/IPAK** ## **Features** - Low RDS(on) - High Current Capability ## **www.onsemi.com** - Avalanche Energy Specified - NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **==> picture [492 x 461] intentionally omitted <==** **----- Start of picture text -----**
Requiring Unique Site and Control Change Requirements; ee V(BR)DSS RDS(on) ee MAX ID MAX ee
AEC−Q101 Qualified and PPAP Capable 40 V 26 m @ 4.5 V 33 A
• These Devices are Pb−Free and are RoHS Compliant 19 m @ 10 V
D
Applications
• CCFL Backlight
• DC Motor Control N−CHANNEL MOSFET
• Power Supply Secondary Side Synchronous Rectification G
MAXIMUM RATINGS (TJ = 25 ° C unless otherwise noted) S
Parameter Symbol Value Unit
ee 4
Drain−to−Source Voltage VDSS 40 V
Gate−to−Source Voltage − Continuous VGS ± 20 V 4
NN ee ee
Gate−to−Source Voltage VGS ± 30 V
− Non−Repetitive (tp < 10 S) 1 [2] 1
ee a ae bd
Continuous Drain TC = 25 ° C ID 33 A 3 2 3
(Note 1)Current (R JC) Steady TC = 100 ° C 23 CASE 369CDPAK CASE 369DIPAK
Power Dissipation State TC = 25 ° C PD 40 W (Surface Mount)STYLE 2 (Straight Lead DPAK)STYLE 2
(R JC) (Note 1)
—-_|nN...» ¢ Grdo \ ea be
a Pulsed Drain Current a \ tp = 10 s a w x Kaasoe IDM DSA 67 A MARKING DIAGRAMS
Operating Junction and Storage Temperature TJ, Tstg −55 to ° C & PIN ASSIGNMENT
175 4
TAT AoOCS ma Drain
Source Current (Body Diode) IS 33 A
awn oO) A ee
4
Single Pulse Drain−to−Source Avalanche EAS 39 mJ Drain
Energy (VDD = 50 V, VGS = 10 V, RG = 25
IL(pk) = 28 A, L = 0.1 mH, VDS = 40 V)
Lead Temperature for Soldering Purposes TL 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be we]Po = 2 7
assumed, damage may occur and reliability may be affected. 1 Drain 3 1 2 3
Gate Source Gate Drain Source
THERMAL RESISTANCE MAXIMUM RATINGS
A = Assembly Location*
es Parameter Symbol ee ee Value Unit YWW = Work Week= Year
Junction−to−Case (Drain) R JC 3.7 ° C/W 5806N = Device Code
Junction−to−Ambient − Steady State (Note 1) R JA 57.5 G = Pb−Free Package
AYWW 58 06NG
AYWW 58 06NG
**----- End of picture text -----**
||~~ee ee ee~~|~~ee ee ee~~|| |---|---|---|---| |**Parameter**
~~es~~|**Symbol**
~~es~~
~~ee ee ee~~|**Value**
~~es~~
~~ee ee ee~~|**Unit**
~~es~~| |Junction−to−Case (Drain)|R JC
~~ee ee ee~~|3.7
~~ee ee ee~~|°C/W| |Junction−to−Ambient − Steady State (Note 1)y State (Note 1)State (Note 1)(Note 1)Note 1))|R JA|57.5|| 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces. * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: **NTD5806N/D** **1** © Semiconductor Components Industries, LLC, 2016 **October, 2024 − Rev. 8** **NTD5806N, NVD5806N** ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C un|less otherwise noted)|less otherwise noted)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|40|45.5||V| |Drain−to−Source Breakdown Voltage
Temperature Coefficient|V(BR)DSS/TJ||||29.5||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,
VDS= 40 V|TJ= 25°C|||1.0|�A| ||||TJ= 150°C|||100|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||||±100|nA| |**ON CHARACTERISTICS**(Note 2)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.4||2.5|V| |Negative Threshold Temperature Co-
efficient|VGS(TH)/TJ||||5.8||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 15 A|||12.7|19|m�| |||VGS= 4.5 V, ID= 10 A|||17.8|26|| |**CHARGES, CAPACITANCES AND GATE RESISTANCES**|||||||| |Input Capacitance|Ciss|VGS= 0 V, f = 1.0 MHz,
VDS= 25 V|||860||pF| |Output Capacitance|Coss||||130||| |Reverse Transfer Capacitance|Crss||||100||| |Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 20 V,
ID= 30 A|||17|38|nC| |Threshold Gate Charge|QG(TH)||||0.95||| |Gate−to−Source Charge|QGS||||3.4||| |Gate−to−Drain Charge|QGD||||4.5||| |**SWITCHING CHARACTERISTICS**(Note 3)|||||||| |Turn−On Delay Time|td(on)|VGS= 4.5 V, VDD= 20 V,
ID= 30 A, RG= 2.5�|||10.6||ns| |Rise Time|tr||||93.7||| |Turn−Off Delay Time|td(off)||||14.2||| |Fall Time|tf||||4.3||| |Turn−On Delay Time|td(on)|VGS= 10 V, VDD= 20 V,
ID= 30 A, RG= 2.5�|||8.0||ns| |Rise Time|tr||||49||| |Turn−Off Delay Time|td(off)||||19.8||| |Fall Time|tf||||2.6||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,
IS= 10 A|TJ= 25°C||0.86|1.2|V| ||||TJ= 150°C||0.69||| |Reverse Recovery Time|tRR|VGS= 0 V, dIs/dt
IS= 30|= 100 A/�s,
A||18.8||ns| |Charge Time|ta||||11.8||| |Discharge Time|tb||||7.0||| |Reverse Recovery Charge|QRR||||10.9||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTD5806N, NVD5806N** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [492 x 620] intentionally omitted <==** **----- Start of picture text -----**
70 70
10 V TJ = 25 ° C VDS ≥ 10 V
60 60
4.5 V
50 50
VGS = 7, 6, 5.8, 5.5, 5.2, 5 V
40 40
4.0 V
30 30
20 20 TJ = 100 ° C
3.5 V TJ = 25 ° C
10 10
0 0 TJ = −55 ° C
0 0.5 1 1.5 2 2.5 3 2 3 4 5 6
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.021 0.05
ID = 15 A TJ = 25 ° C
0.019 TJ = 25 ° C 0.04
0.017 0.03
VGS = 4.5 V
0.015 0.02
0.013 0.01 VGS = 10 V
0.011 0
4 5 6 7 8 9 10 10 20 30 40 50 60 70
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0 10,000
1.9 ID = 30 A VGS = 0 V
1.81.7 VGS = 10 V TJ = 150 ° C
1.6
1000
1.5
1.4
1.3
1.2
1.1 100 TJ = 100 ° C
1.0
0.9
0.8
0.7 10
−50 −25 0 25 50 75 100 125 150 175 2 12 22 32 42
TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage
, DRAIN CURRENT (A) , DRAIN CURRENT (A)
ID ID
) � ) �
, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (
DS(on) DS(on)
R R
, LEAKAGE (nA)
IDSS
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
DS(on)
R
**----- End of picture text -----**
**www.onsemi.com** **3** **NTD5806N, NVD5806N** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [493 x 605] intentionally omitted <==** **----- Start of picture text -----**
2000 15 30
VGS = 0 V
TJ = 25 ° C
1500
QT
10 20
1000 Ciss VDS VGS
5 Qg s Q gd 10
500
Coss
ID = 30 A
Crss TJ = 25 ° C
0 0 0
10 5 0 5 10 15 20 25 30 35 40 0 5 10 15 20
Vgs Vds Qg, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Gate−to−Source and
Figure 7. Capacitance Variation Drain−to−Source Voltage vs. Total Charge
1000 15
VIDDD = 30 A = 32 V VTJGS = 25 = 0 V ° C
VGS = 10 V tf
100 10
td(off)
tr
10 td(on) 5
1 0
1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000
100
10 � s
10 100 � s
VGS = 10 V 1 ms
Single Pulse
1 TC = 25 ° C 10 msdc
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1 1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
C, CAPACITANCE (pF)
, GATE−TO−SOURCE VOLTAGE (V)
GS
V , DRAIN−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
, SOURCE CURRENT (A)
IS
, DRAIN CURRENT (A)
ID
**----- End of picture text -----**
**Figure 11. Maximum Rated Forward Biased Safe Operating Area** **www.onsemi.com** **4** **NTD5806N, NVD5806N** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [494 x 204] intentionally omitted <==** **----- Start of picture text -----**
10
D = 0.5
0.2
1
0.1
0.05
0.02
0.01
Single Pulse
0.1
0.00001 0.0001 0.001 0.01 0.1 1
t, PULSE TIME (s)
Figure 12. Thermal Response
C/W)
( °
r(t), Effective Transient Thermal Resistance
**----- End of picture text -----**
|**ORDERING INFORMATION**||| |---|---|---| |**Order Number**|**Package**|**Shipping**†| |NTD5806NG|IPAK (Straight Lead DPAK)
(Pb−Free)|75 Units / Rail| |NTD5806NT4G|DPAK
(Pb−Free)|2500 / Tape & Reel| |NVD5806NT4G*|DPAK
(Pb−Free)|2500 / Tape & Reel| |SVD5806NT4G*|DPAK
(Pb−Free)|2500 / Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - *NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. **www.onsemi.com** **5** **NTD5806N, NVD5806N** ## **PACKAGE DIMENSIONS** **DPAK (SINGLE GAUGE)** CASE 369C ISSUE E **==> picture [481 x 413] intentionally omitted <==** **----- Start of picture text -----**
NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D DETAIL A H OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.
L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX
b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38
e SIDE VIEW A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
H Z Z D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L L3 0.035 0.050 0.89 1.27
A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01
L1 CONSTRUCTIONSALTERNATE Z 0.155 −−− 3.93 −−−
DETAIL A
ROTATED 90 CW � STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
SOLDERING FOOTPRINT* 4. DRAIN
6.20 3.00
0.244 0.118
2.58
0.102
5.80
1.60 6.17
0.228
0.063 0.243
SCALE 3:1
� inches [mm] �
**----- End of picture text -----**
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **6** **NTD5806N, NVD5806N** ## **PACKAGE DIMENSIONS** **==> picture [432 x 238] intentionally omitted <==** **----- Start of picture text -----**
IPAK
CASE 369D
ISSUE C
B C NOTES:
1. DIMENSIONING AND TOLERANCING PER
V R E ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
4 Z DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.35
S A B 0.250 0.265 6.35 6.73
HF 1 2 3 o t eee C 0.086 0.094 2.19 2.38
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
−T− F 0.037 0.045 0.94 1.14
SEATING G 0.090 BSC 2.29 BSC
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
J S 0.025 0.040 0.63 1.01
F
H V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
D 3 PL
G 0.13 (0.005) M T STYLE 2:PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
**----- End of picture text -----**
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