SURA8130T3G
Fast / Ultrafast Diode, 300 V, 2 A, Single, 1.1 V, 65 ns, 35 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: AEC-Q101
- Diode Case Style: DO-214AC (SMA)
- Diode Configuration: Single
- Forward Voltage Max: 1.1V
- Forward Surge Current: 35A
- Reverse Recovery Time: 65ns
- Average Forward Current: 2A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 300V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.081 € |
| Current stock | 10+ |
| Lead time | 30 days |
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## Power Rectifier, Ultra-Fast Recovery, 1 A, 300-400 V
## **ULTRAFAST RECTIFIERS 1 AMPERE, 300−400 VOLTS**
## MURA130, SURA8130, MURA140, NRVUA140V, SURA8140
Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.
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SMA<br>CASE 403D<br>**----- End of picture text -----**<br>
## **MARKING DIAGRAM**
## **Features**
- Small Compact Surface Mountable Package with J−Bend Leads
- Rectangular Package for Automated Handling
- High Temperature Glass Passivated Junction
- Low Forward Voltage Drop (0.89 V Max @ 1.0 A, TJ = 150 C)
- NRVUA and SURA8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
## **Mechanical Characteristics:**
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U4x<br>AYWW<br>U4x = Device Code<br>x = F for MURA130<br>= G for MURA140<br>A = Assembly Location**<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br>
** The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank.
- Case: Epoxy, Molded
- Weight: 70 mg (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds
- Polarity: Polarity Band Indicates Cathode Lead
- ESD Protection:
- Human Body Model > 4000 V (Class 3)
- Charged Device Model > 1000 V (Class C5)
## **ORDERING INFORMATION**
|**Device**|**Package**|**Shipping**†|
|---|---|---|
|SURA8130T3G−VF01*|SMA<br>(Pb−Free)|5,000 / Tape<br>& Reel|
|MURA140T3G<br>SURA8130T3G−GA01*|||
|NRVUA140VT3G*|||
|NRVUA140VT3G−GA01*|||
**DISCONTINUED** (Note 1)
MURA130T3G SMA 5,000 / Tape SURA8130T3G* (Pb−Free) & Reel SURA8140T3G* ~~—=~~ | |
- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
1. **DISCONTINUED:** These devices are not recommended for new design. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com.
Publication Order Number: **MURA130T3/D**
**1**
Semiconductor Components Industries, LLC, 2016 **April, 2025 − Rev. 12**
**MURA130, SURA8130, MURA140, NRVUA140V, SURA8140**
## **MAXIMUM RATINGS**
|**Symbol**|**Rating**|**Value**|**Unit**|
|---|---|---|---|
|VRRM<br>VRWM<br>VR|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage<br>MURA130T3G/SURA8130T3G/SURA8130T3G−VF01/SURA8130T3G−GA01<br>MURA140T3G/SURA8140T3G/NRVUA140VT3G/NRVUA140VT3G−GA01|300<br>400|V|
|IF(AV)|Average Rectified Forward Current<br>@ TL= 150C<br>@ TL= 125C|1.0<br>2.0|A|
|IFSM|Non-Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Condtions Halfwave, Single Phase, 60 Hz)|35|A|
|TJ|Operating Junction Temperature Range|−65 to +175|C|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
## **THERMAL CHARACTERISTICS**
**Symbol Characteristic Max Unit** PsiJL Thermal Resistance, Junction−to−Lead (TL = 25C) (Note 1) 24 C/W (Note 2) RJA Thermal Resistance, Junction−to−Ambient (Note 1) 216 JCT Thermal Resistance, Junction−to−Case Top (Note 1) 16 C/W 1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4. 2. In compliance with JEDEC 51, these values (historically represented by RJL) are now referenced as PsiJL. **ELECTRICAL CHARACTERISTICS Symbol Characteristic Max Unit** vF Maximum Instantaneous Forward Voltage (Note 3) V (iF = 1.0 A, TJ = 25C) 1.1 (iF = 1.0 A, TJ = 150C) 0.89 iR Maximum Instantaneous Reverse Current (Note 3) A (Rated DC Voltage, TJ = 25C) 5.0 (Rated DC Voltage, TJ = 150C) 150 trr Maximum Reverse Recovery Time ns (iF = 1.0 A, di/dt = 50 A/s) 65 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. ~~_~~ Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
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**MURA130, SURA8130, MURA140, NRVUA140V, SURA8140**
## **TYPICAL CHARACTERISTICS**
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100 1000<br>TJ = 175C<br>=== — ———————————<br>= es es ee ee | s Ee es<br>10 TJ = 175C<br>100<br>——————— ———<br>TJ = 100 C<br>1 SEESes e e i Es es —es|<br>——————— 10 ee TJ = 100C<br>0.1 po | —————<br>ee TJ = 25C ee TJ = 25C |<br>0.01 es ee 1 a ee eeee<br>50 100 150 200 250 300 350 400 50 100 150 200 250 300 350 400<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 1. Typical Reverse Current Figure 2. Maximum Reverse Current<br>10 10<br>== — — T a C = 175C 100C — =SSS TC = 175C 100C<br>or 25C SS 25C<br>1 1<br>pf | | Ae pf Se | |e e<br>0.1 pi fff | | | | || 0.1 PZ AZfl<br>| fife fe fs 7 f f o<br>| A VY [7 | | f[ ft ft ft yy i7 [7] 7A | [| ft ft tT<br>0.01 fF | | | | | | | | ff | 0.01 | {| | | [| | [ | [| | |<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5<br>VF, INSTANTANEOUS VOLTAGE (VOLTS) VF, INSTANTANEOUS VOLTAGE (VOLTS)<br>Figure 3. Typical Forward Voltage Figure 4. Maximum Forward Voltage<br>A) A)<br>, REVERSE CURRENT ( , REVERSE CURRENT (<br>IR IR<br>, INSTANTANEOUS FORWARD CURRENT (A)<br>, INSTANTANEOUS FORWARD CURRENT (A)IF IF<br>**----- End of picture text -----**<br>
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30 30<br>NOTE: TYPICAL NOTE: MAXIMUM<br>25 CAPACITANCE AT 25 CAPACITANCE AT<br>0 V = 26 pF 0 V = 29 pF<br>po po<br>20 20<br>15 15<br>105 S S S 105 [if<br>0 CCRBCEEe 0 ECR<br>0 4 8 12 16 20 24 28 32 36 40 0 4 8 12 16 20 24 28 32 36 40<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF) C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
**Figure 5. Typical Capacitance**
**Figure 6. Maximum Capacitance**
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**MURA130, SURA8130, MURA140, NRVUA140V, SURA8140**
## **TYPICAL CHARACTERISTICS** (continued)
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5 1<br>dc<br>THIIIh<br>4<br>0.75<br>dc<br>3<br>SQUARE WAVE<br>C or Se<br>0.5<br>2 CA SQUARE WAVE RE C EEE) «= LSS<e<br>0.25<br>1<br>Por PsSA LEE PNET<br>0 PETERS) OL 0 E LEN<br>80 90 100 110 120 130 140 150 160 170 180 0 20 40 60 80 100 120 140 160 180<br>TL, LEAD TEMPERATURE (C) TA, AMBIENT TEMPERATURE (C)<br>Figure 7. Current Derating, Lead Figure 8. Current Derating, Ambient<br>(FR−4 Board with Minimum Pad)<br>3.54 fof | tf<br>dc<br>3 PF | fl flff lt OK<br>2.5 ee ee ee<br>SQUARE WAVE<br>1.52 Poof eA OK]<br>1 Ae<br>0.50 |Cae|AF | |<br>0 0.5 1 1.5 2 2.5 3 3.5<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>, AVERAGE FORWARD CURRENT (A) , AVERAGE FORWARD CURRENT (A)<br>IF(AV) IF(AV)<br>, AVERAGE POWER DISSIPATION (W)<br>F<br>P<br>**----- End of picture text -----**<br>
**Figure 9. Power Dissipation**
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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
## **SMA**
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STYLE 1 STYLE 2<br>SCALE 1:1<br>**----- End of picture text -----**<br>
CASE 403D ISSUE J
DATE 22 OCT 2021
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STYLE 1: STYLE 2:<br>PIN 1. CATHODE (POLARITY BAND) NO POLARITY<br>2. ANODE<br>**----- End of picture text -----**<br>
## **GENERIC**
## **MARKING DIAGRAM***
XXXX XXXX AYWW � AYWW � STYLE 1 STYLE 2 XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week � = Pb−Free Package
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking.
## **DOCUMENT NUMBER: 98AON04079D DESCRIPTION: SMA**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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© Semiconductor Components Industries, LLC, 2019
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Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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