SUP60020E-GE3

Power MOSFET, N Channel, 80 V, 150 A, 2400 µohm, TO-220AB, Through Hole

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:
MSL: MSL 1 - Unlimited
SVHC: Lead (07-Nov-2024)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: TrenchFET
Qualification: -
Power Dissipation: 375W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-220AB
Drain Source Voltage Vds: 80V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 150A
Drain Source On State Resistance: 2400µohm
Gate Source Threshold Voltage Max: 4V

Delivery and price
Units per pack	1000
Price	1.2 €
Current stock	200+
Lead time	7 days

Datasheet

Updated at March 27, 2026