# Power MOSFET, N Channel, 200 V, 35.1 A, 0.0375 ohm, TO-263 (D2PAK), Surface Mount
**URL**: https://novapart.co/products/SUM90330E-GE3/power-mosfet-n-channel-200-v-351-a-00375-ohm-to
**SKU**: SUM90330E-GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5390
**Stock**: 10+
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:35.1A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0312ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;
## Specifications
| Parameter | Value |
|---|---|
| Svhc | Lead (07-Nov-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | TrenchFET |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 35.1A |
| Drain Source On State Resistance | 0.0375ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2785450/)
_**Work-In-Progress**_
**SUM90330E**
Vishay Siliconix
www.vishay.com
## **N-Channel 200 V (D-S) 175 °C MOSFET**
## **FEATURES**
**==> picture [81 x 117] intentionally omitted <==**
**----- Start of picture text -----**
TO-263
S
D
G
Top View
**----- End of picture text -----**
- ThunderFET[®] power MOSFET
- Low RDS - Qg figure-of-merit (FOM)
- Maximum 175 °C junction temperature
- 100 % Rg and UIS tested
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
## **APPLICATIONS**
Top View D • Synchronous rectification • Power supplies **PRODUCT SUMMARY** • DC/AC inverter VDS (V) 200 • DC/DC converter G RDS(on) max. ( ) at VGS = 10 V 0.0375 • Solar micro inverter RDS(on) max. ( ) at VGS = 7.5 V 0.0422 • Motor drive switch Qg typ. (nC) 21 S ID (A) 35.1 N-Channel MOSFET Configuration Single ~~———— 4~~ **ORDERING INFORMATION** Package TO-263 Lead (Pb)-free and halogen-free SUM90330E-GE3
~~OOOO~~ **ABSOLUTE MAXIMUM RATINGS** (TA = 25 °C, unless otherwise noted) ~~a~~ **PARAMETER SYMBOL LIMIT UNIT** Drain-source voltage VDS 200 V Gate-source voltage VGS ± 20 ~~_ a~~ TC = 25 °C 35.1 Continuous drain current ID TC = 125 °C 20.3 ~~**a** eeeee~~ Pulsed drain current (t = 100 μs) IDM 70 A Continuous source-drain diode current IS 12.5 Single pulse avalanche current[a] IAS 33 ~~—— ee~~ L = 0.1 mH ~~e~~ Single pulse avalanche energy ~~e~~[a] EAS 54.45 mJ TC = 25 °C 125[b] Maximum power dissipation PD W ~~ee~~ TC = 125 °C 41.7[b] ~~a~~ Operating junction and storage temperature ran ~~ces~~ ge ~~Oe~~ TJ, Tstg -55 to +175 ~~een ee~~ °C ~~a~~ Soldering recommendations (peak temperature)[c] 260
|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|
|**PARAMETER**||**SYMBOL**|**MAXIMUM**|**UNIT**|
|Maximum junction-to-ambient (PCB mount)c||RthJA|40|°C/W|
|Maximum junction-to-case (drain)|Steady state|RthJC|1.2||
## **Notes**
a. Duty cycle 1 % b. See SOA curve for voltage derating
c. When mounted on 1" square PCB (FR4 material)
SPending-Rev. B, 06-Sep-17
Document Number: 74505
**1**
For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
_**Work-In-Progress**_
**SUM90330E**
Vishay Siliconix
**==> picture [59 x 48] intentionally omitted <==**
www.vishay.com
|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|**Static**|||||||
|Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA|200|-|-|V|
|Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA|2|-|4|V|
|Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 20 V|-|-|250|nA|
|Zero gate voltage drain current|IDSS|VDS= 200 V, VGS= 0 V|-|-|1|μA|
|||VDS= 200 V, VGS= 0 V, TJ= 125 °C|-|-|150||
|||VDS= 200 V, VGS= 0 V, TJ= 175 °C|-|-|5|mA|
|On-state drain currenta|ID(on)|VDS 10 V, VGS= 10 V|20|-|-|A|
|Drain-source on-state resistancea|RDS(on)|VGS= 10 V, ID= 12.2 A|-|0.0312|0.0375||
|||VGS= 7.5 V, ID= 11.5 A|-|0.0337|0.0422||
|Forward transconductancea|gfs|VDS= 15 V, ID= 10 A|-|28|-|S|
|**Dynamicb**|||||||
|Input capacitance|Ciss|VDS= 100 V, VGS= 0 V, f = 1 MHz|-|1172|-|pF|
|Output capacitance|Coss||-|150|-||
|Reverse transfer capacitance|Crss||-|11|-||
|Totalgate charge|Qg|VDS= 100 V, VGS=10 V, ID= 12.2 A|-|21|32|nC|
|Gate-source charge|Qgs||-|6|-||
|Gate-drain charge|Qgd||-|5.3|-||
|Gate resistance|Rg|f = 1 MHz|0.76|3.8|7.6||
|Turn-on delay time|td(on)|VDD= 100 V, RL= 14.2, ID 7 A,
VGEN= 10 V, Rg= 1|-|12|24|ns|
|Rise time|tr||-|25|50||
|Turn-off delay time|td(off)||-|30|50||
|Fall time|tf||-|22|44||
|**Drain-Source Body Diode Characteristics**|||||||
|Pulse diode forward current (t = 100 μs)|ISM||-|-|70|A|
|Body diode voltage|VSD|IF= 7 A, VGS= 0 V|-|0.8|1.5|V|
|Body diode reverse recovery time|trr|IF= 7 A, di/dt = 100 A/μs|-|111|170|ns|
|Body diode reverse recovery charge|Qrr||-|0.51|1|μC|
|Reverse recovery fall time|ta||-|94|-|ns|
|Reverse recovery rise time|tb||-|17|-||
|Body diode peak reverse recovery charge|IRM(REC)||-|8.5|17|A|
## **Notes**
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._
SPending-Rev. B, 06-Sep-17
Document Number: 74505
**2**
For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
_**Work-In-Progress**_
**SUM90330E**
**==> picture [59 x 48] intentionally omitted <==**
www.vishay.com
## Vishay Siliconix
## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted)
**==> picture [504 x 591] intentionally omitted <==**
**----- Start of picture text -----**
Axis Title
Axis Title
70 10000 70 10000
VGS = 10 V thru 7 V
56 56
VGS = 6 V
1000 1000
42 42
28 28
100 TC = 25 °C 100
VGS = 5 V
14 14
TC = 125 °C TC = -55 °C
0 10 0 10
0 1 2 3 4 0 2 4 6 8
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)2nd line
2nd line
Output Characteristics Transfer Characteristics
Axis Title Axis Title
0.06 10000 2500 10000
0.05 2000
1000 1000
0.04 VGS = 7.5 V 1500
Ciss
0.03 VGS = 10 V 1000
100 Coss 100
0.02 500
Crss
0.01 10 0 10
0 14 28 42 56 70 0 20 40 60 80 100
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
2nd line 2nd line
On-Resistance vs. Drain Current and Gate Voltage Capacitance
Axis Title Axis Title
10 10000 2.8 10000
ID = 12.2 A VDS = 100 V VGS = 10 V, ID = 12.2 A
8
2.2
VDS = 50 V 1000 1000
6 VGS = 7.5 V,
ID = 11.5 A
VDS = 160 V 1.6
4
100 100
1.0
2
0 10 0.4
0 5.5 11 16.5 22 -50 -25 0 25 50 75 100 125 150 175
Qg - Total Gate Charge (nC)2nd line TJ - Junction Temperature (°C)2nd line
2nd line
2nd line 1st line 2nd line Drain Current (A)- 1st line 2nd line
ID
- Drain Current (A)
ID
2nd line
2nd line 1st line 2nd line 1st line 2nd line
- On-Resistance (Ω) C - Capacitance (pF)
DS(on)
R
2nd line 1st line 2nd line 2nd line 1st line 2nd line
- On-Resistance (Normalized)
- Gate-to-Source Voltage (V)
GS
V DS(on)
R
**----- End of picture text -----**
**Gate Charge**
## **On-Resistance vs. Junction Temperature**
Document Number: 74505
SPending-Rev. B, 06-Sep-17
**3**
For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
_**Work-In-Progress**_
**SUM90330E**
**==> picture [59 x 48] intentionally omitted <==**
www.vishay.com
## Vishay Siliconix
## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted)
**==> picture [504 x 171] intentionally omitted <==**
**----- Start of picture text -----**
Axis Title Axis Title
100 10000 0.15 10000
ID = 12.2 A
10 0.12
T J = 150 °C 1000 1000
1 0.09
TJ = 25 ° C TJ = 150 °C
0.1 0.06
100 100
TJ = 25 °C
0.01 0.03
0.001 10 0 10
0 0.2 0.4 0.6 0.8 1.0 1.2 4 5 6 7 8 9 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
2nd line 2nd line
2nd line 1st line 2nd line 2nd line 1st line 2nd line
- On-Resistance (Ω)
- Source Current (A)
IS DS(on)
R
**----- End of picture text -----**
## **Source-Drain Diode Forward Voltage**
## **On-Resistance vs. Gate-to-Source Voltage**
**==> picture [238 x 382] intentionally omitted <==**
**----- Start of picture text -----**
Axis Title
3.7 10000
ID = 250 μA
3.1
1000
2.5
100
1.9
1.3 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
2nd line
Threshold Voltage
Axis Title
100 10000
I DM limited
10
Limited by RDS(on) (1) 1000
100 μs
1 1ms
DC, 10 s ,
1 s, 100 ms
100
0.1
T C = 25 °C BVDSS limited
Single pulse
0.01 10
0.1 1 10 100 1000
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
(V)
2nd line VGS(th)
1st line 2nd line
2nd line 1st line 2nd line
- Drain Current (A)
ID
**----- End of picture text -----**
**Safe Operating Area, Junction-to-Ambient**
**==> picture [238 x 377] intentionally omitted <==**
**----- Start of picture text -----**
Axis Title
60 10000
TC = -55 °C
45
TC = 25 °C
1000
30 TC = 125 °C
100
15
0 10
0 5 10 15 20 25
ID - Drain Current (A)
2nd line
Transconductance
100
25 °C
150 °C
10
1
0.00001 0.0001 0.001 0.01
Time (s)
2nd line
2nd line 1st line 2nd line
- Transconductance (S)
fs
g
(A)
2nd line IDAV
**----- End of picture text -----**
## **Avalanche vs. Time**
Document Number: 74505
SPending-Rev. B, 06-Sep-17
**4**
For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
_**Work-In-Progress**_
**SUM90330E**
**==> picture [59 x 48] intentionally omitted <==**
www.vishay.com
Vishay Siliconix
## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted)
**==> picture [238 x 186] intentionally omitted <==**
**----- Start of picture text -----**
Axis Title
40 10000
30
1000
20
100
10
0 10
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
2nd line
Current Derating [a]
2nd line 1st line 2nd line
- Drain Current (A)
ID
**----- End of picture text -----**
**==> picture [238 x 171] intentionally omitted <==**
**----- Start of picture text -----**
Axis Title
250 10000
ID = 10 mA
240
1000
230
100
220
210 10
-50 -25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
2nd line
2nd line 1st line 2nd line
- Drain-to-Source Voltage (V)
DS
V
**----- End of picture text -----**
**==> picture [196 x 8] intentionally omitted <==**
**----- Start of picture text -----**
Drain Source Breakdown vs. Junction Temperature
**----- End of picture text -----**
## **Note**
a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit
**==> picture [434 x 188] intentionally omitted <==**
**----- Start of picture text -----**
1
Duty Cycle = 0.5
0.2
0.1 Notes:
0.05 PDM
0.02 t1
Single Pulse 1. Duty Cycle, D =t 2 t t12
2. Per Unit Base = RthJC = 1.2 °C/W
3. TJM - TA = PDMZthJA [(t)]
4. Surface Mounted
0.1
0.0001 0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Thermal Impedance
Normalized Effective Transient
**----- End of picture text -----**
_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74505._
SPending-Rev. B, 06-Sep-17
Document Number: 74505
**5**
For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**Package Information**
Vishay Siliconix
www.vishay.com
## **TO-263 (D[2] PAK): 3-LEAD**
## **VERSION 1: FACILITY CODE = T**
**==> picture [332 x 153] intentionally omitted <==**
**----- Start of picture text -----**
-B-
A
E c2
E1 6
-A- K
E3
A A
e bb2 Detail “A” c E2
0.010 M A M
2 PL
L2 D3
D2
D4
1
D
D
L
L3
**----- End of picture text -----**
**==> picture [95 x 152] intentionally omitted <==**
**----- Start of picture text -----**
L1
DETAIL A (ROTATED 90°)
b
b1
SECTION A-A
0° - 5° L4
M
c1 c
**----- End of picture text -----**
## **Notes**
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
|**DIM.**|**DIM.**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|---|---|---|
|||**MIN.**|**MAX.**|**MIN.**|**MAX.**|
|A||0.160|0.190|4.064|4.826|
|b||0.020|0.039|0.508|0.990|
|b1||0.020|0.035|0.508|0.889|
|b2||0.045|0.055|1.143|1.397|
|Thin lead||0.013|0.018|0.330|0.457|
|Thick lead||0.023|0.028|0.584|0.711|
|Thin lead||0.013|0.017|0.330|0.431|
|Thick lead||0.023|0.027|0.584|0.685|
|c2||0.045|0.055|1.143|1.397|
|D||0.340|0.380|8.636|9.652|
|D1||0.220|0.240|5.588|6.096|
|D2||0.038|0.042|0.965|1.067|
|D3||0.045|0.055|1.143|1.397|
|D4||0.044|0.052|1.118|1.321|
|E||0.380|0.410|9.652|10.414|
|E1||0.245|-|6.223|-|
|E2||0.355|0.375|9.017|9.525|
|E3||0.072|0.078|1.829|1.981|
|e||0.100 BSC||2.54 BSC||
|K||0.045|0.055|1.143|1.397|
|L||0.575|0.625|14.605|15.875|
|L1||0.090|0.110|2.286|2.794|
|L2||0.040|0.055|1.016|1.397|
|L3||0.050|0.070|1.270|1.778|
|L4||0.010 BSC||0.254 BSC||
|M||-|0.002|-|0.050|
Revison: 28-Oct-2024
Document Number: 71198
**1**
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**Package Information**
Vishay Siliconix
www.vishay.com
## **VERSION 2: FACILITY CODE = N**
**==> picture [492 x 232] intentionally omitted <==**
**----- Start of picture text -----**
E A E
c2 E1
Gauge
plane
L
L4
Plating b1, b3 Base metal
2x b2 J1 (b, b2)
e 2x b SECTION G - G and T - T
0.25 A B
OPTION 1 OPTION 2
2 leads 3 leads
c
L1 0°~ 8°
D1
D L3 A1
H
L2 (c)
c1
**----- End of picture text -----**
|**DIM.**|**MIN.**|**MAX.**|
|---|---|---|
|A|4.36|4.56|
|A1|0|0.25|
|b|0.70|0.90|
|b1|0.51|0.89|
|b2|1.20|1.46|
|b3|1.17|1.37|
|c|0.38|0.694|
|c1|0.38|0.534|
|c2|1.19|1.34|
|D|8.60|9.00|
|D1|6.9|7.5|
|E|10.15|10.55|
|E1|8.1|8.7|
|e|2.54 BSC||
|H|15.0|15.6|
|L|1.9|2.5|
|L1|-|1.65|
|L2|-|1.78|
|L3|0.25 typ.||
|L4|4.78|5.28|
|J1|2.56|2.96|
|ECN: S24-1080-Rev. L, 28-Oct-2024
DWG: 5843|||
Document Number: 71198
Revison: 28-Oct-2024
**2**
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
**AN826**
## **Vishay Siliconix**
## RECOMMENDED MINIMUM PADS FOR D[2] PAK: 3-Lead
**==> picture [238 x 323] intentionally omitted <==**
**----- Start of picture text -----**
0.420
(10.668)
mil
0.145
(3.683)
0.135
(3.429)
0.200 0.050
| rt
— (5.080) (1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.355 (9.017)
0.635
(16.129)
**----- End of picture text -----**
Return to Index
Document Number: 73397 11-Apr-05
www.vishay.com
**1**
**Legal Disclaimer Notice** Vishay
www.vishay.com
## **Disclaimer**
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
Vishay products are not designed for use in life-saving or life-sustaining applications or any application in which the failure of the Vishay product could result in personal injury or death unless specifically qualified in writing by Vishay. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
_**© 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_
Revision: 01-Jul-2024
**1**
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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