# Power MOSFET, N Channel, 150 V, 85 A, 0.019 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2454816/)

**URL**: https://novapart.co/products/SUM85N15-19-E3/power-mosfet-n-channel-150-v-85-a-0019-ohm-to-263
**SKU**: SUM85N15-19-E3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.9400
**Stock**: 10+
**Lead Time**: 335 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 375W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 85A |
| Drain Source On State Resistance | 0.019ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2454816/)

**SUM85N15-19** ~~a~~ **Vishay Siliconix** 

## **N-Channel 150-V (D-S) 175 C MOSFET** 

## FEATURES 

## PRODUCT SUMMARY 

**V(BR)DSS (V) rDS(on) ( ) ID (A)** 

TrenchFET Power MOSFET 175 C Junction Temperature New Low Thermal Resistance Package 100% R Tested g 

~~es~~ 150 0.019 @ VGS = 10 V 85[a] APPLICATIONS Primary Side Switch Automotive D − 42-V EPS and ABS − DC/DC Conversion **TO-263** − Motor Drives G 

G D S Top View S Ordering Information: SUM85N15-19 SUM85N15-19-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C UNLESS OTHERWISE NOTED) ~~a a~~ **Parameter Symbol Limit Unit** Drain-Source Voltage VDS 150 ~~a~~ Gate-Source Voltage VGS 20 V TC = 25 C 85[a] ~~——~~ **Continuous Drain Current (TJ = 175** ~~———————~~ **C) ID** TC = 125 C 50[a] **A** Pulsed Drain Current IDM 180 Avalanche Current IAR 50 ~~CO a~~ Repetitive Avalanche Energy[b] ~~GG~~ L = 0.1 mH EAR 125 mJ TC = 25 C 375[c] **Maximum Power Dissipation[b] PD W** TA = 25 C[d] 3.75 ~~Ge~~ Operating Junction and Storage Temperature Range TJ, Tstg − 55 to 175 C 

THERMAL RESISTANCE RATINGS ~~a~~ **Parameter Symbol Limit Unit** ~~es~~ Junction-to-Ambient PCB Mount (TO-263)[d] RthJA 40 ~~Ge~~ **C/W** Junction-to-Case (Drain) RthJC 0.4 ~~$$~~ 

Notes 

- a. Package limited. 

- b. Duty cycle 1%. 

- c. See SOA curve for voltage derating. 

- d. When mounted on 1” square PCB (FR-4 material). 

Document Number:  71703 S-32523—Rev. B, 08-Dec-03 

www.vishay.com 

**1** 

**SUM85N15-19** 

## **Vishay Siliconix** 

## SPECIFICATIONS (TJ =25 C UNLESS OTHERWISE NOTED) 

|SPECIFICATIONS (TJ =25J =25=25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ =25J =25=25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ =25J =25=25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ =25J =25=25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ =25J =25=25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ =25J =25=25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ =25J =25=25 C UNLESS OTHERWISE NOTED)|
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|**Static**|||||||
|Drain-Source Breakdown Voltage<br>~~a~~|V(BR)DSS<br>~~a~~|VDS= 0 V, ID= 250 A<br>~~a~~|150<br>~~a~~|~~a~~|~~a~~|**V**<br>~~a~~|
|Gate-Threshold Voltage<br>~~GG~~|VGS(th)<br>~~GG~~|VDS= VGS, ID= 250 A<br>~~GG~~<br>~~Ge~~|2<br>~~GG~~|~~GG~~|4<br>~~GG~~||
|Gate-Body Leakage<br>~~es~~|IGSS<br>~~es~~|VDS= 0 V, VGS=<br>20 V<br>~~es~~<br>~~Ge~~|~~es~~|~~es~~|100<br>~~es~~|nA<br>~~es~~|
|Zero Gate Volta**g**e Drain Current|I**DSS**|VDS= 150 V, VGS= 0 V<br>~~Ge~~<br>~~a~~|~~a~~|~~a~~|1<br>~~a~~|A|
|||VDS= 150 V, VGS= 0 V, TJ= 125 C<br>~~a~~|~~a~~|~~a~~|50<br>~~a~~||
|||VDS= 150 V, VGS= 0 V, TJ= 175 C<br>~~a~~|~~a~~|~~a~~|250<br>~~a~~||
|On-State Drain Currenta<br>~~a~~|ID(on)<br>~~Rn anne~~|VDS<br>5 V, VGS= 10 V<br>~~anne~~|120|||A|
|Drain-Source On-State Resistancea<br>~~a~~|r**DS(on)**<br>~~Rn anne~~<br>~~a~~|VGS= 10 V, ID= 30 A<br>~~anne~~||0.015|0.019|~~a~~|
|||VGS= 10 V, ID= 30 A, TJ= 125 C<br>~~anne~~<br>~~a~~|~~a~~|~~a~~|0.038<br>~~a~~||
|||VGS= 10 V, ID= 30 A, TJ= 175 C<br>~~a~~|~~a~~|~~a~~|0.050<br>~~a~~||
|Forward Transconductancea<br>~~Ge~~|gfs<br>~~Ge~~|VDS= 15 V, ID= 30 A<br>~~Ge~~|25<br>~~Ge~~|~~Ge~~|~~Ge~~|S<br>~~Ge~~|
|**Dynamicb**<br>~~ee~~<br>~~ee~~<br>~~aa~~|||||||
|Input Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|Ciss<br>~~ee~~|VGS= 0 V, VDS= 25 V, f = 1 MHz|~~a~~<br>~~es~~|4750<br>~~a~~<br>~~es~~<br>~~ee~~|~~es~~|pF|
|Output Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Coss<br>~~ee~~||~~a ~~<br>~~es~~<br>~~a~~|530<br> ~~a~~<br>~~es~~<br>~~ee~~<br>~~ee~~|~~es~~||
|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|Crss||~~es~~<br>~~a~~|220<br>~~es~~<br>~~ee~~<br>~~ee~~|~~es~~||
|Total Gate Chargec<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Qg|V**DS**= 75 V**,**  V**GS**= 10 V**,**I**D**= 85 A|~~a~~<br>~~ee~~|76<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|110<br>~~ee~~|nC|
|Gate-Source Chargec<br>~~ee~~<br>~~ee~~<br>~~ee~~|Qgs||~~a~~<br>~~ee~~<br>~~es~~<br>~~a~~|21<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~**ee**~~|~~ee~~<br>~~es~~||
|Gate-Drain Chargec<br>~~ee~~<br>~~ee~~<br>~~ee~~|Qgd||~~ee~~<br>~~a~~<br>~~GO~~|26<br>~~ee~~<br>~~**ee**~~<br>~~GO~~|~~ee~~||
|Gate Resistance<br>~~ee~~<br>~~GG~~<br>~~ee~~|Rg<br>~~GG~~|~~GG~~|0.5<br>~~a~~<br>~~GG~~<br>~~GO~~|1.8<br>~~**ee**~~<br>~~GG~~<br>~~GO~~|3.0<br>~~GG~~|~~GG~~|
|Turn-On Delay Timec<br>~~ee~~<br>~~ee~~|td(on)|**VDD = 75 V, RL = 0.9**<br>ID<br>85 A, VGEN= 10 V, Rg= 2.5<br>Q|~~GO~~<br>~~ee~~|22<br>~~GO~~<br>~~ee~~<br>~~ee~~|35<br>~~ee~~|**ns**|
|Rise Timec<br>~~ee~~<br>~~ee~~|tr||~~GO~~<br>~~ee~~<br>~~es~~|170<br>~~GO~~<br>~~ee~~<br>~~es~~<br>~~ee~~|250<br>~~ee~~<br>~~es~~||
|Turn-Off Delay Timec<br>~~ee~~<br>~~ee~~|td(off)||~~ee~~<br>~~ee~~|40<br>~~ee~~<br>~~ee~~<br>~~ee~~|60<br>~~ee~~<br>~~ee~~||
|Fall Timec<br>~~ee~~|tf||~~ee~~|170<br>~~ee~~|250<br>~~ee~~||
|**Source-Drain Diode Ratings and Characteristics (TC = 25 C)b**<br>~~ee~~<br>~~ee~~<br>~~**e**e~~<br>~~eeoeee a~~|||||||
|Continuous Current<br>~~**e**e~~|IS|~~ee~~|~~ee~~|~~oe~~|85<br>~~ee a~~|**A**<br>~~a~~|
|Pulsed Current<br>~~**e**e~~<br>~~Rs~~|ISM<br>~~Rs~~|~~ee~~<br>~~Rs~~|~~ee~~<br>~~Rs~~|~~oe~~<br>~~Rs~~|180<br>~~ee a~~<br>~~Rs~~||
|Forward Voltagea<br>~~**e**e~~<br>~~G~~<br>~~ee~~|VSD<br>~~G~~|IF = 85 A, VGS= 0 V<br>~~ee~~<br>~~OO~~|~~ee ~~<br>~~OO~~<br>~~ee~~|1.0<br> ~~oe ~~<br>~~OO~~<br>~~ee~~|1.5<br> ~~ee a~~<br>~~OO~~<br>~~ee~~|V<br>~~a~~<br>~~ee~~|
|Reverse Recovery Time<br>~~ee~~<br>~~ee~~|trr|IF = 50 A, di/dt = 100 A/ s<br>K|~~ee~~<br>~~ee~~|130<br>~~ee~~<br>~~ee~~|200<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|
|Peak Reverse Recovery Current<br>~~ee~~<br>~~ee~~<br>~~po~~|IRM(REC)<br>~~po~~||~~ee~~<br>~~ee~~<br>~~ee~~|8<br>~~ee~~<br>~~ee~~<br>~~ee~~|12<br>~~ee ~~<br>~~ee~~<br>~~ee~~|A<br> ~~ee~~<br>~~ee~~<br>~~eee~~|
|Reverse Recovery Charge<br>~~ee~~<br>~~po~~|Qrr<br>~~po~~||~~ee~~<br>~~ee~~|0.52<br>~~ee~~<br>~~ee~~|1.2<br>~~ee ~~<br>~~ee~~|C<br> ~~ee~~<br>~~eee~~|



Notes a. Pulse test; pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. 

c. Independent of operating temperature. 

Document Number:  71703 S-32523—Rev. B, 08-Dec-03 

www.vishay.com 

**2** 

**SUM85N15-19** 

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**----- Start of picture text -----**<br>
Vishay Siliconix<br>vV<br>TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)<br>|<br>Output Characteristics Transfer Characteristics<br>180 180<br>VGS = 10 thru 7 V<br>150 fe 150 eee<br>6 V<br>120 120 fe<br>_f-— 2<br>90 90<br>60 fifo 60 ee)ie<br>TC = 125 C<br>5 V<br>30 fo 30 ff<br>25 C<br>4 V − 55 C<br>0 A 0 —OD<br>0 2 4 6 8 10 0 1 2 3 4 5 6 7<br>VDS −   Drain-to-Source Voltage (V) VGS −   Gate-to-Source Voltage (V)<br>Transconductance On-Resistance vs. Drain Current<br>180 0.04<br>TC =  − 55 C<br>150 |||<br>25 C 0.03<br>120<br>a<br>125 C<br>90 fA 0.02 V GS  = 10 V<br>60<br>Za<br>0.01<br>30<br>oo<br>0 Ae 0.00<br>0 20 40 60 80 100 120 0 20 40 60 80 100 120<br>ID −   Drain Current (A) ID −   Drain Current (A)<br>Capacitance Gate Charge<br>7000 20<br>6000 PT Ty C [Ty] iss 16 I VDDS  = 85 A  = 75 V<br>5000 Gna<br>4000 = T——— 12<br>3000 PT<br>2000 a 8<br>4<br>1000 Crss C oss<br>0 0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>SEnEs= VDS −   Drain-to-Source Voltage (V) Le Qg −   Total Gate Charge (nC)<br>Document Number:  71703 www.vishay.com<br>S-32523—Rev. B, 08-Dec-03  3<br>  Drain Current (A)   Drain Current (A)<br>− −<br>D D<br>I I<br>)<br>  On-Resistance (<br>−<br> Transconductance (S)<br>−<br>gfs rDS(on)<br>  Capacitance (pF)<br>−<br>C     Gate-to-Source Voltage (V)<br>−<br> GS<br>V<br>**----- End of picture text -----**<br>


**3** 

**SUM85N15-19** 

**Vishay Siliconix** 

**==> picture [513 x 473] intentionally omitted <==**

**----- Start of picture text -----**<br>
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)<br>|<br>On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage<br>2.8 100<br>VGS = 10 V<br>2.4 ID = 30 A<br>2.0<br>a 1.6 TJ = 150 C TJ = 25 C<br>10<br>YO ey a<br>1.2<br>AT ff<br>0.8<br>at —<br>0.40.0 mTCCEttt tL 1 feeee p e<br>− 50 − 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2<br>TJ −   Junction Temperature ( C) VSD −   Source-to-Drain Voltage (V)<br>Drain Source Breakdown vs.<br>Avalanche Current vs. Time Junction Temperature<br>1000 190<br>180 I D  = 1.0 mA<br>100<br>170<br>10 IAV (A) @ TA = 25 C<br>160<br>1<br>150<br>IAV (A) @ TA = 150 C<br>0.1 140<br>− 50 − 25 0 25 50 75 100 125 150 175<br>0.00001 0.0001 0.001 0.01 0.1 1<br>tin  (Sec) TJ −   Junction Temperature ( C)<br>)<br>  On-Resistance  (Normalized)<br>−<br>  Source Current (A)<br>−<br>S<br>I<br>rDS(on)<br>(V)<br>(a)I Dav V(BR)DSS<br>**----- End of picture text -----**<br>


Document Number:  71703 S-32523—Rev. B, 08-Dec-03 

www.vishay.com 

**4** 

**SUM85N15-19 Vishay Siliconix** ~~TT~~ 

## THERMAL RATINGS ~~Po~~ 

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**----- Start of picture text -----**<br>
Maximum Avalanche and Drain Current<br>vs. Case Temperature Safe Operating Area<br>90 1000<br>Limited<br>by rDS(on)<br>75<br>10 s<br>100<br>6045 ON 10 Fe [tHthtbeAHHENS][ SHEro] 100 s<br>1 ms<br>10 ms<br>30 100 ms<br>dc<br>1 TC = 25 C<br>15 Single Pulse<br>0 0.1<br>ET ETIIN TT PTIT TTT EET<br>0 25 50 75 100 125 150 175 0.1 1 10 100 1000<br>TC −  Ambient Temperature ( C) VDS −   Drain-to-Source Voltage (V)<br> Drain Current (A)  Drain Current (A)<br>− −<br>I D I D<br>**----- End of picture text -----**<br>


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Normalized Thermal Transient Impedance, Junction-to-Case<br>2<br>1 Duty Cycle = 0.5<br>C TT<br>0.2<br>e rt<br>0.1<br>S a<br>0.1 fe 0.05<br>0.02<br>Single Pulse<br>a a ee ee<br>0.01 a<br>10 [−] [4] 10 [−] [3] 10 [−] [2] 10 [−] [1] 1<br>Square Wave Pulse Duration (sec)<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


Document Number:  71703 S-32523—Rev. B, 08-Dec-03 

www.vishay.com 

**5** 

**Legal Disclaimer Notice** 

Vishay 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

All product specifications and data are subject to change without notice. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. 

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

Product names and markings noted herein may be trademarks of their respective owners. 

Document Number: 91000 Revision: 18-Jul-08 

www.vishay.com 1 



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