# Power MOSFET, N Channel, 20 V, 30 A, 6000 µohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1497656/)

**URL**: https://novapart.co/products/SUD50N02-06P-E3/power-mosfet-n-channel-20-v-30-a-6000-ohm-to-252
**SKU**: SUD50N02-06P-E3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7820
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 100mW |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 6000µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1497656/)

# **SUD50N02-06P Vishay Siliconix** ~~a~~ 

## **N-Channel 20-V (D-S) 175 C MOSFET** 

## FEATURES 

PRODUCT SUMMARY TrenchFET Power MOSFET ~~“sl~~ ; 175 C Junction Temperature **VDS (V) rDS(on) ( ) ID (A)[a]** PWM Optimized for High Efficiency ~~ee~~ 0.006 @ VGS = 10 V ~~ee~~ 26 : 100% Rg Tested **20** 0.0095 @ VGS = 4.5 V 21 APPLICATIONS ~~po PEee~~ ° 

Synchronous Buck DC/DC Conversion 

− Desktop 

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TO-252<br>Cc)<br>Drain Connected to Tab<br>5<br>G D S<br>Top View<br>**----- End of picture text -----**<br>


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− Server 

Ordering Information:  SUD50N02-06P 

N-Channel MOSFET 

ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) ~~nn~~ **Parameter Symbol Limit Unit** ~~ee~~ Drain-Source Voltage VDS 20 **V** Gate-Source Voltage VGS 20 ~~Ge—————~~ TA = 25 C 26[a] **Continuous Drain Current[a] ID** TC= 25 C 50[b] ~~a | Po~~ Pulsed Drain Current IDM 100 A ~~sO~~ Continuous Source Current (Diode Conduction)[a] IS 26 ~~Oe~~ Avalanche Current IAS 45 **L = 0** . **1 mH** Single Pulse Avalanche Energy EAS 101 mJ ~~——————_ EE ee ee ee ee~~ TA = 25 C 6.8[a] **Maximum Power Dissipation PD W** TC = 25 C 65 ~~a GC~~ Operating Junction and Storage Temperature Range ~~|~~ TJ, Tstg ~~Po~~ − 55 to 175 C 

THERMAL RESISTANCE RATINGS ~~a~~ **Parameter Symbol Typical Maximum Unit** ~~ee~~ t 10 sec 18 22 **Maximum Junction** - **to** - **Ambient[a] R** thJA ~~ee~~ Steady State 40 50 **C/** W ~~| ee a~~ Maximum Junction-to-Case RthJC 1.9 2.3 Notes a. Surface Mounted on FR4 Board, t 10 sec. b. Limited by package 

Document Number:  71931 S-32425—Rev. C, 24-Nov-03 

www.vishay.com 

**1** 

**SUD50N02-06P** ~~CNIS~~ HAY **Vishay Siliconix** 

|**SUD50N02-06P**<br>,<br>=f<br>~~CNIS~~HAY|**SUD50N02-06P**<br>,<br>=f<br>~~CNIS~~HAY|
|---|---|
|**Vishay Siliconix**<br>SPECIFICATIONS (TJ= 25 C UNLESS OTHERWISE NOTED)<br>**Parameter**<br>**Symbol**<br>**Test Condition**<br>**Min**<br>**Typa**<br>**Max**<br>**Unit**<br>**Static**<br>~~Vv~~<br>~~—RD~~<br>~~Rtn~~<br>~~(OU (I  (~~||
|Drain-Source Breakdown Voltage<br>V(BR)DSS<br>VGS= 0 V, ID= 250 A<br>20<br>**V**||
|Gate Threshold Voltage<br>VGS(th)<br>VDS= VGS, ID= 250 A<br>0.8<br>3.0<br>Gate-Body Leakage<br>IGSS<br>VDS= 0 V, VGS=<br>20 V<br>100<br>nA<br>**Zero Gate Voltage Drain Current**<br>**IDSS**<br>VDS= 20 V, VGS= 0 V<br>1<br>**A**<br>VDS= 20 V, VGS= 0 V, TJ= 125 C<br>50<br>~~TL~~<br>~~Ln DEL LT~~<br>~~ie~~||
|On-State Drain Currentb<br>ID(on)<br>VDS= 5 V, VGS= 10 V<br>50<br>A||
|VGS= 10 V, ID= 20 A<br>0.0046<br>0.006<br>Dr**a**in-**Sou**r**ce** **O**n-**State**R**es**i**sta**n**ce**b<br>r**DS(on)**<br>VGS= 10 V, ID= 20 A, TJ= 125 C<br>0.0084<br>VGS= 4.5 V, ID= 20 A<br>0.0073<br>0.0095<br>Forward Transconductanceb<br>gfs<br>VDS= 15 V, ID= 20 A<br>15<br>S<br>**Dynamica**<br>~~po~~<br>~~|eee~~||
|Input Capacitance<br>Ciss<br>2550<br>Output Capacitance<br>Coss<br>VGS= 0 V, VDS= 10 V, f = 1 MHz<br>900<br>**p**F<br>Reverse Transfer Capacitance<br>Crss<br>415<br>Total Gate Chargec<br>Qg<br>19<br>30<br>Gate-Source Chargec<br>Qgs<br>V**DS**= 1**0**V**,**  V**GS**= 4.**5**V**,**I**D**=**50**A<br>7.5<br>n**C**<br>Gate-Drain Chargec<br>Qgd<br>6.0<br>Gate Resistance<br>Rg<br>0.5<br>1.5<br>2.4<br>Turn-On Delay Timec<br>td(on)<br>11<br>20<br>Rise Timec<br>tr<br>**VDD = 10 V, RL = 0.2**<br>10<br>15<br>**ns**<br>Turn-Off Delay Timec<br>td(off)<br>ID<br>50 A, VGEN= 10 V, RG= 2.5<br>24<br>35<br>Fall Timec<br>tf<br>9<br>15<br>**Source-Drain Diode Ratings and Characteristic (TC = 25 C)**<br>Pulsed Current<br>ISM<br>100<br>A<br>Diode Forward Voltageb<br>VSD<br>IF= 50 A, VGS= 0 V<br>1.2<br>1.5<br>V<br>Source-Drain Reverse Recovery Time<br>trr<br>IF= 50 A, di/dt = 100 A/ s<br>35<br>70<br>ns<br>Notes<br>~~ee~~<br>~~ee eee ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a ee~~<br>~~a~~<br>~~eeee~~<br>~~a se~~<br>~~a~~<br>~~———~~<br>~~Cea~~<br>~~Gs nn~~<br>~~I~~<br>~~CeCe~~<br>~~ef~~<br>~~ef~~||
|a.<br>Guaranteed by design, not subject to production testing.||
|b.<br>Pulse test; pulse width<br>300 s, duty cycle<br>2%.||
|c.<br>Independent of operating temperature.||
|TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)<br>~~Ce~~||
|**Output Characteristics**<br>**Transfer Characteristics**||
|0<br>20<br>40<br>60<br>80<br>100<br>120<br>140<br>160<br>0<br>20<br>40<br>60<br>80<br>100<br>−Drain Current (A)<br>I D<br>−Drain Current (A)<br>I D<br>25 C<br>−55 C<br>2 V<br>TC= 125 C<br>VGS= 10 thru 5 V<br>~~3 V~~<br>4 V<br>~~ne~~<br>~~Seeeeee~~<br>~~a~~<br>~~|__———_~~<br>~~Bae ae~~<br>~~fo~~<br>~~TAT~~<br>~~Pe~~<br>~~fe~~<br>~~—~~<br>~~oD~~||
|0<br>2<br>4<br>6<br>8<br>10<br>0.0<br>0.5<br>1.0<br>1.5<br>2.0<br>2.5<br>3.0<br>3.5<br>4.0<br>4.5||
|VDS −Drain-to-Source Voltage (V)<br>VGS −Gate-to-Source Voltage (V)||



Document Number:  71931 S-32425—Rev. C, 24-Nov-03 

www.vishay.com 

**2** 

**SUD50N02-06P Vishay Siliconix** 

## **Vishay Siliconix** Vv TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) ~~|~~ 

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Transconductance On-Resistance vs. Drain Current<br>100 0.010<br>TC =  − 55 C<br>80 0.008<br>25 C<br>VGS = 4.5 V<br>=<br>125 C<br>60 0.006<br>VGS = 6.3 V<br>7S pti} fe<br>40 Can 0.004 E—ET——<br>VGS = 10 V<br>20 0.002<br>Vo | | tt<br>0 0.000<br>Po P| tt ft<br>0 10 20 30 40 50 0 20 40 60 80 100<br>ID −   Drain Current (A) ID −   Drain Current (A)<br>Capacitance Gate Charge<br>3500 10<br>3000 a VDS = 10 V<br>Ciss 8 I D  = 50 A<br>2500 SS<br>2000 ee 6<br>1500<br>A 4<br>Coss<br>1000<br>Sane<br>Crss 2<br>500<br>NT<br>0 | ttt 0<br>0 4 8 12 16 20 0 8 16 24 32 40<br>VDS −   Drain-to-Source Voltage (V) Qg −   Total Gate Charge (nC)<br>On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage<br>1.6 100<br>VGS = 10 V<br>ID = 30 A<br>1.4<br>;<br>1.2 y ee2 on<br>TJ = 150 C TJ = 25 C<br>10<br>1.0<br>0.8<br>va I<br>0.6 PP EEL ELLE 1 |PP<br>− 50 − 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5<br>TJ −   Junction Temperature ( C) VSD −   Source-to-Drain Voltage (V)<br>)<br>  On-Resistance (<br>−<br> Transconductance (S)<br>−<br>g fs rDS(on)<br>  Capacitance (pF)<br>−<br>C     Gate-to-Source Voltage (V) −<br>V GS<br>)<br>  On-Resistance ( (Normalized)<br>−   Source Current (A)<br>−<br>I S<br>rDS(on)<br>**----- End of picture text -----**<br>


Document Number:  71931 S-32425—Rev. C, 24-Nov-03 

www.vishay.com 

**3** 

**SUD50N02-06P Vishay Siliconix** ~~ee~~ 

## THERMAL RATINGS 

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Maximum Drain Current vs.<br>Ambiemt Temperature Safe Operating Area<br>40 1000<br>Limited<br>by rDS(on)<br>32<br>100 10, 100 s<br>Se a [Satiine]  A<br>1 ms<br>24 ~ 10 ESTRUS<br>10 ms<br>100 ms<br>16 eeeN 1 PEISIS TON| 1 s<br>NSS TR<br>10 s<br>100 s<br>8 \ 0.1 pot Py TA = 25 C ee ~AT dc<br>Single Pulse<br>=e<br>a ee<br>0 0.01 eee<br>0 25 50 75 100 125 150 175 0.1 1 10 100<br>TA −  Ambient Temperature ( C) VDS −   Drain-to-Source Voltage (V)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>2<br>1 CTO<br>BS ee Duty Cycle = 0.5 ee ee DD ate ae ee ee enn es HHH<br>a 8<br>0.2<br>mr<br>CC EE OTee<br>0.1<br>|Z |<br>0.1<br>0.02<br>ES He<br>e r<br>0.05<br>a ci<br>ee Se<br>Single Pulse<br>re eeT NE CONE nn CTC CT<br>0.01<br>10 [−] [4] 10 [−] [3] 10 [−] [2] 10 [−] [1] 1 10 100 1000<br>Square Wave Pulse Duration (sec)<br>Normalized Thermal Transient Impedance, Junction-to-Case<br>2<br>1 Duty Cycle = 0.5<br>TT a [ oeogETC at EEeett EteeEEAee ee<br>0.2<br>tH TT TEE<br>etm | TT Ot PY<br>0.1 gp,<br>ip”AA LAUIE<br>0.1 —- 42. —— == — = = ——ee<br>0.02<br>ioWha osa a aeeoe oe se ee ee eee asl ee<br>[A 0.05 [HTT EE TTTTTTee<br>Single Pulse<br>A tae<br>0.01<br>10 [−] [4] 10 [−] [3] 10 [−] [2] 10 [−] [1] 1 10 100<br>Square Wave Pulse Duration (sec)<br> Drain Current (A)  Drain Current (A)<br>− −<br>I D I D<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


Document Number:  71931 S-32425—Rev. C, 24-Nov-03 

www.vishay.com 

**4** 

**Legal Disclaimer Notice** 

Vishay 

**==> picture [60 x 50] intentionally omitted <==**

## **Disclaimer** 

All product specifications and data are subject to change without notice. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. 

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

Product names and markings noted herein may be trademarks of their respective owners. 

Document Number: 91000 Revision: 18-Jul-08 

www.vishay.com 1 



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