# Power MOSFET, N Channel, 50 V, 30 A, 0.018 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1612654/)

**URL**: https://novapart.co/products/SUD45N05-20L-E3/power-mosfet-n-channel-50-v-30-a-0018-ohm-to-252
**SKU**: SUD45N05-20L-E3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.8200
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:50V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (15-Jun-2015) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 50V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.018ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1612654/)

# **SUD45N05-20L Vishay Siliconix** 

## **N-Channel 50-V (D-S), 175 C MOSFET, Logic Level** 

|PRODUCT SUMMARY|PRODUCT SUMMARY|PRODUCT SUMMARY|
|---|---|---|
|**VDS(V)**<br>~~————e~~|**rDS(on)( )**<br>~~————e~~|**ID (A)a**<br>~~————e~~|
|**50**<br>~~————e~~|0.018 @ VGS= 10 V<br>~~————e~~|30<br>~~————e~~|
||0.020 @ VGS= 4.5 V<br>~~————e~~<br>~~ee~~|30<br>~~————e~~<br>~~ee~~|



## FEATURES 

175TrenchFET | C Maximum Junction Temperature | Power MOSFET 100% R Tested g 

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D<br>TO-252<br>(_)<br>G<br>Drain Connected to Tab<br>o e<br>G D S<br>Top View<br>Order Number:<br>S<br>SUD45N05-20L<br>**----- End of picture text -----**<br>


N-Channel MOSFET 

ABSOLUTE MAXIMUM RATINGS (TC = 25 C UNLESS OTHERWISE NOTED) ~~| es~~ **Parameter Symbol Limit Unit** Drain-Source Voltage VDS 50 ~~QO~~ **V** Gate-Source Voltage VGS 20 ~~Ss~~ TC = 25 C 30 **Continuous Drain Current[a]** TC = 100 C **ID** 30 ~~ee~~ Pulsed Drain Current ~~es~~ IDM ~~ee~~ 100 A ~~eG~~ Continuous Source Current (Diode Conduction)[a] IS 43 Avalanche Current IAR 37 ~~QC~~ Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH EAR ~~OO~~ 93 mJ TC = 25 C 75 **Maximum Power Dissipation PD W** TA = 25 C 2.5[a] ~~GO~~ Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 C 

THERMAL RESISTANCE RATINGS ~~|~~ **Parameter Symbol Limit Unit** ~~ee~~ Free Air, FR4 Board Mount 60 **M** ax mum unc **i J ti** on- o- **t A** m **bi** en **t R** thJA Free Air, Vertical Mount 110 **C/** W ~~————eE EE a~~ Maximum Junction-to-Case ~~POee~~ RthJC ~~eee~~ 2.0 Notes a. Package limited. b. Surface Mounted on FR4 Board, t 10 sec. 

For  SPICE model information via the Worldwide Web:  http://www.vishay.com/www/product/spice.htm 

Document Number:  70271 S-31724—Rev. F, 18-Aug-03 

www.vishay.com 

**1** 

**SUD45N05-20L Vishay Siliconix** ~~a~~ a 

SPECIFICATIONS (TJ = 25 C UNLESS OTHERWISE NOTED) 

|SPECIFICATIONS (TJ = 25J = 25= 25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ = 25J = 25= 25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ = 25J = 25= 25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ = 25J = 25= 25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ = 25J = 25= 25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ = 25J = 25= 25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ = 25J = 25= 25 C UNLESS OTHERWISE NOTED)|
|---|---|---|---|---|---|---|
|**Parameter**<br>~~es~~|**Symbol**<br>~~es~~|**Test Condition**<br>~~es~~|**Min**<br>~~es~~|**Typa**<br>~~es~~|**Max**<br>~~es~~|**Unit**<br>~~es~~|
|**Static**<br>~~ee eeoeee~~|||||||
|Drain-Source Breakdown Voltage<br>~~ee ee~~|V(BR)DSS<br>~~ee~~|VGS= 0 V, ID= 250 A<br>~~ee~~|50<br>~~oe~~|~~ee~~|~~ee~~|**V**<br>~~ee~~|
|Gate Threshold Voltage<br>~~ee ee~~<br>~~a~~|VGS(th)<br>~~ee~~|VDS= VGS, ID= 250 A<br>~~ee~~|1.0<br>~~oe~~|2.0<br>~~ee~~|~~ee~~||
|Gate-Body Leakage<br>~~ee ee~~<br>~~a~~|IGSS<br>~~ee~~<br>~~OC~~|VDS= 0 V, VGS=<br>20 V<br>~~ee ~~<br>~~OC~~|~~oe~~<br>~~OC~~|~~ee~~<br>~~OC~~|100<br>~~ee~~<br>~~OC~~|nA<br>~~ee~~<br>~~OC~~|
|Zero Gate Volta**g**e Drain Current|I**DSS**|VDS= 50 V, VGS= 0 V<br>~~a~~|~~a~~|~~a~~|1<br>~~a~~|A<br>~~a~~<br>~~a~~|
|||VDS= 50 V, VGS= 0 V, TJ= 125 C|||50||
|||VDS= 50 V, VGS= 0 V, TJ= 175 C<br>~~a~~|~~a~~|~~a~~|150<br>~~a~~||
|On-State Drain Currentb<br>~~a~~|ID(on)<br>~~a~~|VDS= 5 V, VGS= 10 V<br>~~a~~|43<br>~~a~~|~~a~~|~~a~~|A<br>~~a~~|
|**Drain** **Source On** **State Resistanceb**<br>-<br>-<br>~~a~~<br>~~|~~<br>eg|**rDS(**<br>**)**<br>on<br>~~a~~<br>~~|~~<br>eg ~~a~~<br>~~a~~|VGS= 10 V, ID= 20 A<br>~~a~~<br>~~|~~<br>~~a~~|~~a~~<br>~~|~~<br>~~a~~|~~a~~<br>~~|~~<br>~~a~~|0.018<br>~~a~~<br>~~|~~<br>~~a~~|~~a~~<br>~~|~~<br>~~a~~<br>~~7~~<br>~~a~~|
|||VGS= 10 V, ID= 20 A, TJ= 125 C<br>~~|~~<br>~~a~~|~~|~~<br>~~a~~|~~|~~<br>~~a~~|0.036<br>~~|~~<br>~~a~~||
|||VGS= 10 V, ID= 43 A, TJ= 125 C<br>~~7~~<br>~~a~~|~~7~~<br>~~a~~|~~7~~<br>~~a~~|0.040<br>~~7~~<br>~~a~~||
|||VGS= 4.5 V, ID= 43 A<br>~~a~~|~~a~~|~~a~~|0.020<br>~~a~~||
|Forward Transconductanceb<br>~~a~~|gfs<br>~~A ~~|VDS= 15 V, ID= 43 A<br> ~~CC~~|20<br>~~CC~~|~~CC~~|~~CC~~|S<br>~~CC~~|
|**Dynamica**<br>~~eeee~~<br>~~|fT~~|||||||
|Input Capacitance<br>~~ee~~<br>~~OO~~<br>~~OO~~|Ciss<br>~~ee~~|VGS= 0 V, VDS= 25 V, f = 1 MHz<br>~~ee~~<br>~~|~~|~~|fT~~<br>~~ee~~|1800<br>~~fT~~<br>~~ee~~<br>~~a~~|3600<br>~~ee~~|pF|
|Output Capacitance<br>~~ee ~~<br>~~OO~~<br>~~OO~~|Coss<br> ~~ee~~||~~| fT~~<br>~~ee~~|370<br>~~fT~~<br>~~ee~~<br>~~a~~|~~ee~~||
|Reverse Transfer Capacitance<br>~~OO~~<br>~~OO~~<br>~~OO~~|Crss||~~ee~~<br>~~ee~~|130<br>~~ee~~<br>~~a~~<br>~~ee~~|~~ee~~<br>~~ee~~||
|Total Gate Chargec<br>~~OO~~<br>~~OO~~<br>~~OO~~<br>~~OO~~|Qg|V**DS**= 25 V**,**  V**GS**= 10 V**,**I**D**= 43 A|~~ee~~<br>~~ee~~|43<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~|60<br>~~ee~~<br>~~ee~~|nC|
|Gate-Source Chargec<br>~~OO~~<br>~~OO~~<br>~~OO~~|Qgs||~~ee~~<br>~~ee~~<br>~~ee~~|7<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~|~~ee~~<br>~~ee~~<br>~~ee~~||
|Gate-Drain Chargec<br>~~OO~~<br>~~OO~~|Qgd||~~ee~~<br>~~ee~~|10<br>~~ee~~<br>~~a~~<br>~~ee~~|~~ee~~<br>~~ee~~||
|Gate Resistance<br>~~OO~~<br>~~a~~<br>~~OO~~|Rg<br>~~a ~~|~~CO~~|0.5<br>~~CO~~<br>~~ee~~|~~a~~<br>~~CO~~<br>~~ee~~|3.6<br>~~CO~~<br>~~ee~~|~~CO~~|
|Turn-On Delay Timec<br>~~OO~~|td(on)|**VDD = 25 V, RL = 0.6**<br>ID<br>43 A, VGEN= 10 V, RG= 2.5<br>0|~~ee~~|10<br>~~ee~~<br>~~a~~|20<br>~~ee~~|**ns**|
|Rise Timec<br>~~OO~~<br>~~a~~|tr<br>~~a~~||~~ee~~<br>~~ee~~|10<br>~~ee~~<br>~~ee~~<br>~~a~~|20<br>~~ee~~<br>~~ee~~||
|Turn-Off Delay Timec|td(off)|||32<br>~~a~~<br>~~a~~|60||
|Fall Timec<br>~~—~~|tf<br>~~—~~||~~ee~~|7<br>~~ee~~<br>~~a~~|15<br>~~ee~~||
|**Source-Drain Diode Ratings and Characteristic (TC = 25 C)**<br>~~a~~|||||||
|Pulsed Current<br>~~Ge~~|ISM<br>~~Ge~~|~~Ge~~|~~Ge~~|~~Ge~~|43<br>~~Ge~~|A<br>~~Ge~~|
|Diode Forward Voltageb<br>~~a~~|VSD<br>~~a~~<br>~~a~~|IF= 43 A, VGS= 0 V<br>~~a~~<br>~~a~~|~~a~~<br>~~a~~|~~a~~<br>~~a~~|1.5<br>~~a~~<br>~~a~~|V<br>~~a~~<br>~~a~~|
|Source-Drain Reverse Recovery Time<br>~~a~~|trr<br>~~a~~|IF= 43 A, di/dt = 100 A/ s<br>~~a~~|~~a~~|49<br>~~a~~|100<br>~~a~~|ns<br>~~a~~|



Notes a. Guaranteed by design, not subject to production testing. 

b. Pulse test; pulse width 300 s, duty cycle 2%. 

c. Independent of operating temperature. 

Document Number:  70271 S-31724—Rev. F, 18-Aug-03 

www.vishay.com **2** 

**SUD45N05-20L Vishay Siliconix** ~~TTT~~ 

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**----- Start of picture text -----**<br>
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)<br>|<br>Output Characteristics Transfer Characteristics<br>100 60<br>VGS = 10, 9, 8, 7, 6 V<br>50<br>80<br>YY 5 V ne<br>40<br>60<br>FT 30<br>40<br>4 V<br>20<br>20 | aune i 10 ece TC = -125 C r<br>3 V 25 C<br>0 foe 0 2 -55 C<br>0 2 4 6 8 10 0 1 2 3 4 5<br>VDS  -  Drain-to-Source Voltage (V) VGS  -  Gate-to-Source Voltage (V)<br>Transconductance On-Resistance vs. Drain Current<br>80 0.04<br>TC = -55 C<br>60 0.03<br>EEREES<br>25 C<br>40 125 C 0.02 VGS = 4.5 V<br>per<br>VGS = 10 V<br>20 0.01<br>=<br>0 [ 0.00<br>0 10 20 30 40 50 60 0 20 40 60<br>ID  -  Drain Current (A) ID  -  Drain Current (A)<br>Capacitance Gate Charge<br>3000 10<br>2500 VDS = 25 V<br>8 I D  = 43 A<br>2000 Ee Ciss<br>6<br>1500 a<br>4<br>1000 a<br>Coss<br>2<br>500 Crss<br>Waa<br>0 eS 0<br>0 10 20 30 40 50 0 10 20 30 40 50<br>VDS  -  Drain-to-Source Voltage (V) Qg  -  Total Gate Charge (nC)<br>-  Drain Current (A) -  Drain Current (A)<br>D D<br>I I<br>)<br>Ω<br>-  On-Resistance (<br>- Transconductance (S)<br>fs<br>g rDS(on)<br>C  -  Capacitance (pF)<br>-  Gate-to-Source Voltage (V)<br> GS<br>V<br>**----- End of picture text -----**<br>


Document Number:  70271 S-31724—Rev. F, 18-Aug-03 

www.vishay.com 

**3** 

**SUD45N05-20L** ~~ee~~ **Vishay Siliconix** 

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TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)<br>[nT<br>**----- End of picture text -----**<br>


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On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage<br>2.25 100 es ae<br>2.00 VGS = 10 V —<br>ID = 20 A<br>1.75<br>TJ = 150 C<br>1.50<br>PPT Fra<br>1.25 TJ = 25 C<br>10<br>1.00 | Z| TTeeer /_ Ah | Vf l ak<br>0.75<br>pet tt | tT = f<br>0.50<br>ft tt —Fo<br>0.25 FEL EELE LL<br>0.00 FPP re el 1 ee<br>-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5<br>TJ  -  Junction Temperature ( C) VSD  -  Source-to-Drain Voltage (V)<br>THERMAL RATINGS<br>[I<br>Maximum Drain Current vs. CaseTemperature Safe Operating Area<br>50 200<br>100<br>40 PTT] Td. CT<br>Limited<br>by rDS(on) 100 s<br>30 10<br>1 ms<br>20<br>: At ty TP NCNG il<br>10 ms<br>1<br>100 ms<br>10 SaaeeaN I Single PulseTC = 25 C TEN, dc, 1 s<br>PT ETTE T<br>0 0.1 aee<br>0 25 50 75 100 125 150 175 0.1 1 10 100<br>TC - Case Temperature ( C) VDS  -  Drain-to-Source Voltage (V)<br>Normalized Thermal Transient Impedance, Junction-to-Case<br>2<br>1<br>Duty Cycle = 0.5<br>0.2<br>= emrer tA<br>A 0.1 R<br>mi p. TT TT<br>0.1<br>0.02<br>el TNE fd<br>| 0.05 a ee ee Be OG GG GGG FG OG<br>m~ | | Pitti yt tT Te<br>Single Pulse<br>0.01 E STA<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 30<br>Square Wave Pulse Duration (sec)<br>)<br>Ω<br>(Normalized)<br>-  On-Resistance (<br>-  Source Current (A)<br>S<br>I<br>rDS(on)<br>- Drain Current (A) - Drain Current (A)<br>I D I D<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


## THERMAL RATINGS ~~[I~~ 

Document Number:  70271 S-31724—Rev. F, 18-Aug-03 

www.vishay.com 

**4** 

**Legal Disclaimer Notice** 

Vishay 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

All product specifications and data are subject to change without notice. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. 

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

Product names and markings noted herein may be trademarks of their respective owners. 

Document Number: 91000 Revision: 18-Jul-08 

www.vishay.com 1 



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