# Power MOSFET, N Channel, 80 V, 40 A, 0.016 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2335406/)

**URL**: https://novapart.co/products/SUD40N08-16-E3/power-mosfet-n-channel-80-v-40-a-0016-ohm-to-252aa
**SKU**: SUD40N08-16-E3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1700
**Stock**: 1000+
**Lead Time**: 442 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 136W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 80V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 0.016ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2335406/)

## **SUD40N08-16 Vishay Siliconix** ~~a~~ 

## **N-Channel 80-V (D-S) 175 C MOSFET** 

PRODUCT SUMMARY ~~Pn~~ **VDS (V) rDS(on) ( ) ID (A)** 80 0.016 @ VGS = 10 V 40 ~~a ee ee~~ 

## FEATURES 

TrenchFET Power MOSFET 175 C Maximum Junction Temperature 100% R Tested g 

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TO-252<br>au<br>G<br>Drain Connected to Tab<br>ol 7<br>G D S<br>Top View<br>Ordering Information: S<br>SUD40N08-16<br>SUD40N08-16—E3 (Lead Free) N-Channel MOSFET<br>**----- End of picture text -----**<br>


ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) ~~|~~ **Parameter Symbol Limit Unit** ~~es~~ Drain-Source Voltage VDS 80 **V** Gate-Source Voltage VGS 20 ~~eeGO~~ TC = 25 C 40 **Continuous Drain Current (TJ = 175 C)[b] ID** TC = 125 C 30 ~~SS~~ Pulsed Drain Current ~~|~~ IDM ~~Pp~~ 60 A ~~GO~~ Continuous Source Current (Diode Conduction) IS 40 ~~GO~~ Avalanche Current IAR 40 ~~GO GG~~ Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH EAR 80 mJ TC = 25 C 136[b] **Maximum Power Dissipation P** D **W** TA = 25 C 3[a] ~~ee a~~ Operating Junction and Storage Temperature Range ~~oe GG~~ TJ, Tstg ~~oo~~ − 55 to 175 C 

THERMAL RESISTANCE RATINGS ~~|~~ **Parameter Symbol Typical Maximum Unit** ~~GG~~ t 10 sec 15 18 **J** unc **ti** on- o- **t A** m **bi** en **t[a] R** thJA ~~a~~ Steady State 40 50 **C/** W ~~| ee GF~~ Junction-to-Case RthJC 0.85 1.1 

Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. 

Document Number:  71323 S-40272—Rev. C, 23-Feb-04 

www.vishay.com 

**1** 

|SPECIFICATIONS (TJ= 25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ= 25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ= 25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ= 25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ= 25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ= 25 C UNLESS OTHERWISE NOTED)|SPECIFICATIONS (TJ= 25 C UNLESS OTHERWISE NOTED)|
|---|---|---|---|---|---|---|
|**Parameter**<br>~~es~~|**Symbol**<br>~~es~~|**Test Condition**<br>~~es~~|**Min**<br>~~es~~|**Typa**<br>~~es~~|**Max**<br>~~es~~|**Unit**<br>~~es~~|
|**Static**<br>~~|~~<br>~~|__|______+_|~~<br>~~||||~~|||||||
|Drain-Source Breakdown Voltage<br>~~|__|~~|V(BR)DSS<br>~~|__|~~|VGS= 0 V, ID= 250 A<br>~~|__|______+_|~~|80<br>~~______+_|~~<br>~~|~~|~~||~~|~~||~~|**V**<br>~~|||~~|
|Gate Threshold Voltage<br>~~|__|~~<br>~~a~~|VGS(th)<br>~~|__|~~|VDS= VGS, ID= 250 A<br>~~|__|______+_|~~|2.0<br>~~______+_|~~<br>~~|~~|~~||~~|4.0<br>~~||~~||
|Gate-Body Leakage<br>~~|__|~~<br>~~a~~|IGSS<br>~~|__|~~<br>~~OC~~|VDS= 0 V, VGS=<br>20 V<br>~~|__| ______+_|~~<br>~~OC~~|~~______+_|~~<br>~~| ~~<br>~~OC~~|~~||~~<br>~~OC~~|100<br>~~||~~<br>~~OC~~|nA<br>~~|| |~~<br>~~OC~~|
|Zero Gate Volta**g**e Drain Current|I**DSS**|VDS= 80 V, VGS= 0 V<br>~~a~~|~~a~~|~~a~~|1<br>~~a~~|A<br>~~a~~<br>~~a~~|
|||VDS= 80 V, VGS= 0 V, TJ= 125 C|||50||
|||VDS= 80 V, VGS= 0 V, TJ= 175 C<br>~~a~~|~~a~~|~~a~~|250<br>~~a~~||
|On-State Drain Currentb<br>~~a~~|ID(on)<br>~~a~~|VDS= 5 V, VGS= 10 V<br>~~a~~|60<br>~~a~~|~~a~~|~~a~~|A<br>~~a~~|
|Drain-Source On-State Resistanceb<br>~~a~~|r**DS(on)**<br>~~a~~<br>~~a~~|VGS= 10 V, ID= 40 A<br>~~a~~<br>~~a~~|~~a~~<br>~~a~~|0.013<br>~~a~~<br>~~a~~|0.016<br>~~a~~<br>~~a~~|~~a~~<br>~~:~~<br>=<br>~~a~~|
|||VGS= 10 V, ID= 40 A, TJ= 125 C<br>~~:~~<br>~~a~~|~~:~~<br>~~a~~|~~:~~<br>~~a~~|0.027<br>~~:~~<br>~~a~~||
|||VGS= 10 V, ID= 40 A, TJ= 175 C<br>~~a~~|~~a~~|~~a~~|0.037<br>~~a~~||
|Forward Transconductanceb<br>~~a~~|gfs<br>~~A~~|VDS= 15 V, ID= 40 A||45||S|
|**Dynamica**<br>~~P|~~<br>~~eeee~~<br>~~|fT~~|||||||
|Input Capacitance<br>~~ee~~<br>~~OO~~<br>~~OO~~|Ciss<br>~~ee~~|VGS= 0 V, VDS= 25 V, F = 1 MHz<br>~~ee~~<br>~~|~~|~~|fT~~<br>~~ee~~|1960<br>~~fT~~<br>~~ee~~<br>~~a~~|~~ee~~|pF|
|Output Capacitance<br>~~ee ~~<br>~~OO~~<br>~~OO~~|Coss<br> ~~ee~~||~~| fT~~<br>~~ee~~|370<br>~~fT~~<br>~~ee~~<br>~~a~~|~~ee~~||
|Reverse Transfer Capacitance<br>~~OO~~<br>~~OO~~<br>~~OO~~|Crss||~~ee~~<br>~~ee~~|200<br>~~ee~~<br>~~a~~<br>~~ee~~|~~ee~~<br>~~ee~~||
|Total Gate Chargec<br>~~OO~~<br>~~OO~~<br>~~OO~~<br>~~OO~~|Qg|V**DS**= 40 V**,**  V**GS**= 10 V**,**I**D**= 40 A|~~ee~~<br>~~ee~~|42<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~|60<br>~~ee~~<br>~~ee~~|nC|
|Gate-Source Chargec<br>~~OO~~<br>~~OO~~<br>~~OO~~|Qgs||~~ee~~<br>~~ee~~<br>~~ee~~|7<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~|~~ee~~<br>~~ee~~<br>~~ee~~||
|Gate-Drain Chargec<br>~~OO~~<br>~~OO~~|Qgd||~~ee~~<br>~~ee~~|13<br>~~ee~~<br>~~a~~<br>~~ee~~|~~ee~~<br>~~ee~~||
|Gate Resistance<br>~~OO~~<br>~~a~~<br>~~OO~~|Rg<br>~~a ~~|~~CO~~|0.5<br>~~CO~~<br>~~ee~~|~~a~~<br>~~CO~~<br>~~ee~~|2.7<br>~~CO~~<br>~~ee~~|~~CO~~|
|Turn-On Delay Timec<br>~~OO~~<br>~~OO~~|td(on)|**VDD = 40 V, RL = 1.0**<br>ID<br>40 A, VGEN= 10 V, Rg= 2.5<br>0|~~ee~~<br>~~ee~~|12<br>~~ee~~<br>~~ee~~<br>~~a~~|20<br>~~ee~~<br>~~ee~~|**ns**|
|Rise Timec<br>~~OO~~<br>~~OO~~|tr||~~ee~~<br>~~ee~~|52<br>~~ee~~<br>~~ee~~<br>~~a~~|80<br>~~ee~~<br>~~ee~~||
|Turn-Off Delay Timec<br>~~OO~~|td(off)||~~ee~~|25<br>~~ee~~<br>~~a~~<br>~~a~~|38<br>~~ee~~||
|Fall Timec<br>~~—~~|tf<br>~~—~~||~~ee~~|10<br>~~ee~~<br>~~a~~|15<br>~~ee~~||
|**Source-Drain Diode Ratings and Characteristic (TC = 25 C)**<br>~~a~~<br>~~|~~|||||||
|Pulsed Current<br>~~Ge~~|ISM<br>~~Ge~~|~~Ge~~|~~Ge~~|~~Ge~~|60<br>~~Ge~~|A<br>~~Ge~~|
|Diode Forward Voltageb<br>~~aa~~|VSD<br>~~aa~~|IF= 40 A, VGS= 0 V<br>~~aa~~||1.0|1.5|V|
|Source-Drain Reverse Recovery Time<br>~~a~~|trr<br>~~a~~|IF= 40  A, di/dt = 100 A/ s||45|70|ns|



Notes 

a. Guaranteed by design, not subject to production testing. 

b. Pulse test; pulse width 300 s, duty cycle 2%. 

c. Independent of operating temperature. 

Document Number:  71323 S-40272—Rev. C, 23-Feb-04 

www.vishay.com 

**2** 

**SUD40N08-16 Vishay Siliconix** ~~a~~ 

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TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)<br>|<br>Output Characteristics Transfer Characteristics<br>100 100<br>VGS = 10 thru 7 V<br>80 80<br>vw fF<br>60 | 6 V 60 eeeen<br>40 [| 40 fese<br>TC = 125 C<br>20 20 25 C<br>3, 4 V 5 V<br>− 55 C<br>0 |—___..—— { 0 aDDa<br>0 2 4 6 8 10 0 1 2 3 4 5 6 7<br>VDS −   Drain-to-Source Voltage (V) VGS −   Gate-to-Source Voltage (V)<br>Transconductance On-Resistance vs. Drain Current<br>80 0.04<br>TC =  − 55 C<br>60 25 C 0.03<br>125 C<br>40 ee] 0.02<br>Za VGS = 10 V<br>20 [Fo 0.01<br>0 fo 0.00<br>0 20 40 60 80 100 0 20 40 60 80 100<br>ID −   Drain Current (A) ID −   Drain Current (A)<br>Capacitance Gate Charge<br>3000 20<br>2500 VDS = 10 V<br>16 I D  = 40 A<br>2000 C iss<br>12<br>1500 SS tat<br>8<br>1000<br>aaa pt Af<br>Crss 4<br>500 Coss<br>KK<br>0 0<br>—S— Ji | tl<br>0 20 40 60 80 0 15 30 45 60 75<br>VDS −   Drain-to-Source Voltage (V) Qg −   Total Gate Charge (nC)<br>  Drain Current (A)   Drain Current (A)<br>− −<br>I D I D<br>)<br>  On-Resistance (<br>−<br> Transconductance (S)<br>−<br>g fs<br>rDS(on)<br>  Capacitance (pF)<br>−<br>C     Gate-to-Source Voltage (V)<br>−<br>V GS<br>**----- End of picture text -----**<br>


Document Number:  71323 S-40272—Rev. C, 23-Feb-04 

www.vishay.com 

**3** 

## **SUD40N08-16 Vishay Siliconix** ~~a~~ wy 

## TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) 

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On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage<br>2.4 100<br>VGS = 10 V<br>2.0 ID = 40 A / eS<br>10<br>TJ = 150 C<br>1.6 Sf npo ew<br>A ae oe<br>1.2 BaapZ4aaea 1 ——+_f- ee rs i 4 ey f+ ACs TJ = 25 es C  |<br>0.8 |Peer— | Ses ey AsAe S ey eee esGs |<br>0.1<br>0.4 Saaaeeee eS s ffey A eyA<br>0.0 SaReeee 0.01 ——————ey——f—_ey f+ |e J<br>− 50 − 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2<br>TJ −   Junction Temperature ( C) VSD −   Source-to-Drain Voltage (V)<br>THERMAL RATINGS<br>Maximum Avalanche Drain Current<br>vs. Case Temperature Safe Operating Area<br>50 1000<br>rT TU TTTTTT<br>40 ~ 100 ee<br>10 s<br>Limited by rDS(on)<br>30 aN ! tt KNSNS SHH S 100 s<br>10<br>1 ms<br>20<br>10 ms<br>1 100 ms<br>10 et ] pL NY Pot| | tA TC = 25  Tt C HE | TUN . 1 s, dc<br>Single Pulse<br>a<br>0 0.1 ee [eH] ee ee ee<br>0 25 50 75 100 125 150 175 0.1 1 10 100<br>TC −  Case Temperature ( C) VDS −   Drain-to-Source Voltage (V)<br>Normalized Thermal Transient Impedance, Junction-to-Case<br>2<br>1<br>Duty Cycle = 0.5<br>ST ee<br>Se ee ee<br>0.2 a ne<br>Sasa<br>0.1<br>i<br>0.1 Fe | | |<br>| | 0.02 ks Re OO Os eG Oe OO QQ GG GQ OGG OO<br>=4 eS [TT ET<br>0.05<br>LZ ee Oe ee Oe eG OOOO GG GG<br>Single Pulse<br>0.01<br>10 [−] [4] 10 [−] [3] 10 [−] [2] 10 [−] [1] 1 10 30<br>Square Wave Pulse Duration (sec)<br> On-Resiistance<br>−<br>(Normalized)<br>  Source Current (A)<br>−<br>rDS(on) I S<br> Drain Current (A)  Drain Current (A)<br>− −<br>I D I D<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


Document Number:  71323 S-40272—Rev. C, 23-Feb-04 

www.vishay.com 

**4** 

**Legal Disclaimer Notice** 

Vishay 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

All product specifications and data are subject to change without notice. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. 

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. 

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

Product names and markings noted herein may be trademarks of their respective owners. 

Document Number: 91000 Revision: 18-Jul-08 

www.vishay.com 1 



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