# Power MOSFET, N Channel, 60 V, 21.4 A, 0.031 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2646406/)

**URL**: https://novapart.co/products/SUD23N06-31-GE3/power-mosfet-n-channel-60-v-214-a-0031-ohm-to
**SKU**: SUD23N06-31-GE3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3370
**Stock**: 500+
**Lead Time**: 120 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:21.4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | TrenchFET |
| Qualification | - |
| Power Dissipation | 31.25W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 21.4A |
| Drain Source On State Resistance | 0.031ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2646406/)

**SUD23N06-31** 

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## Vishay Siliconix 

## **N-Channel 60 V (D-S), MOSFET** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|---|
|**VDS (V)**|**RDS(on) (****)**|**ID (A)a**|**Qg (Typ.)**|
|60|0.031 at VGS= 10 V|9.1|6.5 nC|
||0.045 at VGS= 4.5 V|7.6||



## **FEATURES** 

- **Halogen-free According to IEC 61249-2-21 Definition** 

- TrenchFET[®] Power MOSFET 

- 100 % R and UIS Tested g 

- Compliant to RoHS Directive 2002/95/EC 

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## **APPLICATIONS** 

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**----- Start of picture text -----**<br>
TO-252<br>Drain Connected to Tab<br>G D S<br>Top View<br>**----- End of picture text -----**<br>


**Ordering Information:** SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free) 

- DC/DC Converters 

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D<br>G<br>S<br>**----- End of picture text -----**<br>


N-Channel MOSFET 

|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)||
|---|---|---|---|---|
|**Parameter**||**Symbol**|**Limit**|**Unit**|
|Drain-Source Voltage||VDS|60|V|
|Gate-Source Voltage||VGS|± 20||
|Continuous Drain Current (TJ= 150 °C)|TC= 25 °C|ID|21.4|A|
||TC= 70 °C||17.1||
||TA= 25 °C||9.1a||
||TA= 70 °C||7.6a||
|Pulsed Drain Current||IDM|50||
|Continuous Source-Drain Diode Current|TC= 25 °C|IS|20.8||
||TA= 25 °C||3.8a||
|Single Pulse Avalanche Current|L = 0.1 mH|IAS|20||
|Avalanche Energy||EAS|20|mJ|
|Maximum Power Dissipation|TC= 25 °C|PD|31.25|W|
||TC= 70 °C||20||
||TA= 25 °C||5.7a||
||TA= 70 °C||3.6a||
|Operating Junction and Storage Temperature Range||TJ, Tstg|- 55 to 150|°C|



## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|
|---|---|---|---|---|---|
|**Parameter**||**Symbol**|**Typical**|**Maximum**|**Unit**|
|Maximum Junction-to-Ambienta|t10 s|RthJA|18|22|°C/W|
|Maximum Junction-to-Case|Steady State|RthJC|3.2|4.0||



Notes: a. Surface mounted on 1" x 1" FR4 board, t  10 s. 

Document Number: 68857 S11-0181-Rev. B, 07-Feb-11 

www.vishay.com 1 

**SUD23N06-31** 

## Vishay Siliconix 

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|**SPECIFICATIONS** (TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS** (TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS** (TJ= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|**Static**|||||||
|Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250 µA|60|||V|
|VDSTemperature Coefficient|VDS/TJ|ID= 250 µA||65||mV/°C|
|VGS(th) Temperature Coefficient|VGS(th)/TJ|||- 6.3|||
|Gate-Source Threshold Voltage|VGS(th)|VDS= VGS, ID= 250 µA|1.0||3.0|V|
|Gate-Source Leakage|IGSS|VDS= 0 V, VGS= ± 20 V|||± 100|nA|
|Zero Gate Voltage Drain Current|IDSS|VDS= 60 V, VGS= 0 V|||1|µA|
|||VDS= 60 V, VGS= 0 V, TJ= 70 °C|||20||
|On-State Drain Currenta|ID(on)|VDS5 V, VGS= 10 V|50|||A|
|Drain-Source On-State Resistancea|RDS(on)|VGS= 10 V, ID= 15 A||0.025|0.031||
|||VGS= 4.5 V, ID= 10 A||0.037|0.045||
|Forward Transconductancea|gfs|VDS= 15 V, ID= 15 A||20||S|
|**Dynamicb**|||||||
|Input Capacitance|Ciss|VDS= 25 V, VGS= 0 V, f = 1 MHz||670||pF|
|Output Capacitance|Coss|||140|||
|Reverse Transfer Capacitance|Crss|||60|||
|Total Gate Charge|Qg|VDS= 30 V, VGS= 10 V, ID= 23 A||11|17|nC|
|||VDS= 30 V, VGS= 4.5 V, ID= 23 A||6.5|13||
|Gate-Source Charge|Qgs|||3.0|||
|Gate-Drain Charge|Qgd|||3.0|||
|Gate Resistance|Rg|f = 1 MHz||1.6|3.2||
|Turn-On Delay Time|td(on)|VDD= 30 V, RL= 1.3<br>ID 23 A, VGEN= 4.5 V, Rg= 1||18|30|ns|
|Rise Time|tr|||250|400||
|Turn-Off Delay Time|td(off)|||35|55||
|Fall Time|tf|||68|110||
|Turn-On Delay Time|td(on)|VDD= 30 V, RL= 1.3<br>ID 23 A, VGEN= 10 V, Rg= 1||8|15||
|Rise Time|tr|||15|25||
|Turn-Off Delay Time|td(off)|||30|45||
|Fall Time|tf|||25|40||
|**Drain-Source Body Diode Characteristics**|||||||
|Continuous Source-Drain Diode Current|IS|TC= 25 °C|||20.8|A|
|Pulse Diode Forward Currenta|ISM||||50||
|Body Diode Voltage|VSD|IS= 15 A||1.0|1.5|V|
|Body Diode Reverse Recovery Time|trr|IF= 15 A, dI/dt = 100 A/µs, TJ= 25 °C||30|60|ns|
|Body Diode Reverse Recovery Charge|Qrr|||35|70|nC|
|Reverse Recovery Fall Time|ta|||20||ns|
|Reverse Recovery Rise Time|tb|||10|||



Notes: 

a. Pulse test; pulse width  300 µs, duty cycle  2 %. 

b. Guaranteed by design, not subject to production testing. 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

www.vishay.com 2 

Document Number: 68857 S11-0181-Rev. B, 07-Feb-11 

**SUD23N06-31** 

Vishay Siliconix 

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## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
50<br>V GS  = 10 V thru 6 V 5 V<br>40<br>30<br>20  4 V<br>10<br>3 V<br>0<br>0  2 4 6 8  10<br>VDS  -  Drain-to-Source Voltage (V)<br>Output Characteristics<br>32<br>TC = - 55 °C<br>25 °C<br>24<br>125 °C<br>16<br>8<br>0<br>0 5 10 15 20 25<br>ID  -  Drain Current (A)<br>Transconductance<br>-  Drain Current (A)<br>I D<br>-  Transconductance (S)<br>fs<br>g<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10<br>8<br>6<br>4<br>TC = 25 °C<br>2<br>TC = 125 °C<br>TC = - 55 °C<br>0<br>0 1 2 3 4 5<br>VGS - Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>0.10<br>0.08<br>0.06<br>VGS = 4.5 V<br>0.04<br>VGS = 10 V<br>0.02<br>0.00<br>0 10 20 30 40 50<br>ID  -  Drain Current (A)<br>- Drain Current (A)<br>I D<br>) <br>- On-Resistance (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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On-Resistance vs. Drain Current<br>**----- End of picture text -----**<br>


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1000<br>800<br>Ciss<br>600<br>400<br>200 Coss<br>Crss<br>0<br>0 10 20 30 40 50 60<br>VDS  -  Drain-to-Source Voltage (V)<br>Capacitance<br>C  -  Capacitance (pF)<br>**----- End of picture text -----**<br>


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10<br>ID = 23 A<br>VDS = 30 V<br>8<br>VDS = 15 V<br>6<br>VDS = 45 V<br>4<br>2<br>0<br>0 2 4 6 8 10 12<br>Qg - Total Gate Charge (nC)<br>Gate Charge<br>- Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


Document Number: 68857 S11-0181-Rev. B, 07-Feb-11 

www.vishay.com 

3 

**SUD23N06-31** 

## Vishay Siliconix 

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## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
2.1<br>ID = 15 A<br>VGS = 10 V<br>1.8<br>1.5<br>VGS = 4.5 V<br>1.2<br>0.9<br>0.6<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>- On-Resistance<br>(Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
0.08<br>0.06<br>TJ = 125 °C<br>0.04<br>0.02 T J = 25 °C<br>0.00<br>0 1 2 3 4 5 6 7 8 9 10<br>VGS - Gate-to-Source Voltage (V)<br>)Ω<br>- On-Resistance (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**On-Resistance vs. Gate-to-Source Voltage** 

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**----- Start of picture text -----**<br>
100<br>10<br>TJ = 150 °C<br>T J = 25 °C<br>1<br>0.1<br>T J = - 50 °C<br>0.01<br>0.001<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br>Source-Drain Diode Forward Voltage<br>0.5<br>0.2<br>- 0.1<br>ID = 1 mA<br>- 0.4<br>ID = 250 µA<br>- 0.7<br>- 1.0<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br>- Source Current (A)<br>I S<br>Variance (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br>


## **Threshold Voltage** 

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**----- Start of picture text -----**<br>
500 100<br>Limited by RDS(on) * 10  µs<br>400 10 100 µs<br>300 1 m s<br>1<br>10  ms<br>100  ms, DC<br>200<br>0.1<br>100 TC = 25 °C<br>Single Pulse<br>BVDSS Limited<br>0 0.01<br>0.001 0.01 0.1 1 10 0.1 1 10 100<br>Time (s) VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Single Pulse Power, Junction-to-Ambient<br>Single Pulse Power, Junction-to-Case<br>(W)<br>Power Drain Current (A)<br>-<br>ID<br>**----- End of picture text -----**<br>


www.vishay.com 4 

Document Number: 68857 S11-0181-Rev. B, 07-Feb-11 

**SUD23N06-31** 

Vishay Siliconix 

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## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
25<br>20<br>15<br>10<br>5<br>0<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>Drain Current (A)<br>-<br>I D<br>**----- End of picture text -----**<br>


## **Current Derating*, Junction-to-Case** 

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**----- Start of picture text -----**<br>
40 3.0<br>2.5<br>30<br>2.0<br>20 1.5<br>1.0<br>10<br>0.5<br>0 0.0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>TC - Case Temperature (°C) TA - Ambient Temperature (°C)<br>Power, Junction-to-Case Power, Junction-to-Ambient<br>Power (W) Power (W)<br>**----- End of picture text -----**<br>


* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 

Document Number: 68857 S11-0181-Rev. B, 07-Feb-11 

www.vishay.com 5 

**SUD23N06-31** 

## Vishay Siliconix 

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## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) 

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**----- Start of picture text -----**<br>
1<br>Duty Cycle = 0.5<br>0.2<br>0.1 Notes:<br>0.1<br>0.05 P DM<br>t1<br>t2 t1<br>0.02 1. Duty Cycle, D = t2<br>2. Per Unit Base = RthJA = 50 °C/W<br>3. TJM - TA = PDMZthJA [(t)]<br>Single Pulse 4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1 0.05<br>0.02<br>Single Pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Case<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68857._ 

www.vishay.com 6 

Document Number: 68857 S11-0181-Rev. B, 07-Feb-11 

**Package Information** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **TO-252AA Case Outline** 

## **VERSION 1: FACILITY CODE = Y** 

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**----- Start of picture text -----**<br>
E A<br>C2<br>b3<br>E1<br>b b2 C<br>e<br>A1<br>e1<br>L3<br>D1<br>D<br>H<br>L4<br>L5 L<br>gage plane height (0.5 mm)<br>**----- End of picture text -----**<br>


|b|b2<br>e1<br>gage plane height (0.5 mm)<br>e|b2<br>e1<br>gage plane height (0.5 mm)<br>e|
|---|---|---|
||**MILLIMETERS**||
|**DIM.**|**MIN.**|**MAX.**|
|A|2.18|2.38|
|A1|-|0.127|
|b|0.64|0.88|
|b2|0.76|1.14|
|b3|4.95|5.46|
|C|0.46|0.61|
|C2|0.46|0.89|
|D|5.97|6.22|
|D1|4.10|-|
|E|6.35|6.73|
|E1|4.32|-|
|H|9.40|10.41|
|e|2.28 BSC||
|e1|4.56 BSC||
|L|1.40|1.78|
|L3|0.89|1.27|
|L4|-|1.02|
|L5|1.01|1.52|



## **Note** 

- Dimension L3 is for reference only 

Revision: 16-Dec-2019 

Document Number: 71197 

**1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **VERSION 2: FACILITY CODE = N** 

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**----- Start of picture text -----**<br>
e<br>E A<br>b3<br>E1<br>e c2 E1/2<br>2x b2<br>2x e 3x b 0.25 C A B DETAIL "B" (b)<br>H<br>C<br>b1<br>GAUGE<br>PLANE SEATING DETAIL "B"<br>C C<br>L PLANE<br>(L1)<br>(3°) (3°)<br>θ<br>θ<br>L3 D1<br>D<br>H<br>L6<br>L5<br>L4<br>c<br>c1<br>L2 A1<br>θ<br>**----- End of picture text -----**<br>


||**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|
|**DIM.**|**MIN.**|**MAX.**|
|A|2.18|2.39|
|A1|-|0.13|
|b|0.65|0.89|
|b1|0.64|0.79|
|b2|0.76|1.13|
|b3|4.95|5.46|
|c|0.46|0.61|
|c1|0.41|0.56|
|c2|0.46|0.60|
|D|5.97|6.22|
|D1|5.21|-|
|E|6.35|6.73|
|E1|4.32|-|
|e|2.29 BSC||
|H|9.94|10.34|



||**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|
|**DIM.**|**MIN.**|**MAX.**|
|L|1.50|1.78|
|L1|2.74 ref.||
|L2|0.51 BSC||
|L3|0.89|1.27|
|L4|-|1.02|
|L5|1.14|1.49|
|L6|0.65|0.85|
||0°|10°|
|1|0°|15°|
|2|25°|35°|



## **Notes** 

- Dimensioning and tolerance confirm to ASME Y14.5M-1994 

- All dimensions are in millimeters. Angles are in degrees 

- Heat sink side flash is max. 0.8 mm 

- Radius on terminal is optional 

ECN: E19-0649-Rev. Q, 16-Dec-2019 DWG: 5347 

Revision: 16-Dec-2019 

Document Number: 71197 

**2** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Application Note 826** 

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## Vishay Siliconix 

## **RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)** 

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**----- Start of picture text -----**<br>
0.224<br>(5.690)<br>0.180 0.055<br>(4.572) (1.397)<br>0.243 (6.180)<br>0.420<br>(10.668)<br>0.087 (2.202)<br>0.090 (2.286)<br>**----- End of picture text -----**<br>


Recommended Minimum Pads Dimensions in Inches/(mm) 

> Return to Index Return to Index 

Document Number: 72594 Revision: 21-Jan-08 

www.vishay.com 

3 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

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## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2019 

Document Number: 91000 

**1** 



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---

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