# Power MOSFET, N Channel, 150 V, 15 A, 0.095 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1779255/)

**URL**: https://novapart.co/products/SUD15N15-95-E3/power-mosfet-n-channel-150-v-15-a-0095-ohm-to-252
**SKU**: SUD15N15-95-E3
**Manufacturer**: VISHAY
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9130
**Stock**: 1000+
**Lead Time**: 442 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | Lead (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 62W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 15A |
| Drain Source On State Resistance | 0.095ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1779255/)

**SUD15N15-95** 

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## Vishay Siliconix 

## **N-Channel 150 V (D-S) 175 °C MOSFET** 

|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|
|---|---|---|
|**VDS (V)**|**RDS(on) (****)**|**ID (A)**|
|150|0.095 at VGS= 10 V|15|
||0.100 at VGS= 6 V|15|



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## **FEATURES** 

- TrenchFET[®] Power MOSFETS 

- 175 °C Junction Temperature 

- 100 % R Tested g 

- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 

## **APPLICATIONS** 

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**----- Start of picture text -----**<br>
TO-252<br>Drain Connected to Tab<br>G D S<br>Top View<br>Ordering Information:   SUD15N15-95-E3 (Lead (Pb) free)<br>**----- End of picture text -----**<br>


- Primary Side Switch 

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**----- Start of picture text -----**<br>
D<br>G<br>S<br>N-Channel MOSFET<br>**----- End of picture text -----**<br>


|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TC= 25 °C, unless otherwise noted)|||
|---|---|---|---|---|
|**Parameter**||**Symbol**|**Limit**|**Unit**|
|Drain-Source Voltage||VDS|150|V|
|Gate-Source Voltage||VGS|± 20||
|Continuous Drain Current (TJ= 175 °C)b|TC= 25 °C|ID|15|A|
||TC= 125 °C||8.7||
|Pulsed Drain Current||IDM|25||
|Continuous Source Current (Diode Conduction)||IS|15||
|Avalanche Current||IAR|15||
|Repetitive Avalanche Energy (Duty Cycle1 %)|L = 0.1 mH|EAR|11.3|mJ|
|Maximum Power Dissipation|TC= 25 °C|PD|62b|W|
||TA= 25 °C||2.7a||
|Operating Junction and Storage Temperature Range||TJ, Tstg|- 55 to 175|°C|



|**THERMAL RESISTANCE RATINGS**||||||
|---|---|---|---|---|---|
|**Parameter**||**Symbol**|**Typical**|**Maximum**|**Unit**|
|Junction-to-Ambienta|t10 s|RthJA|16|20|°C/W|
||Steady State||45|55||
|Junction-to-Case||RthJC|2|2.4||



Notes: 

a. Surface mounted on 1" x 1" FR4 board. 

b. See SOA curve for voltage derating. 

Document Number: 71641 S13-0104-Rev. D, 21-Jan-13 

www.vishay.com 1 

For technical questions, contact: pmostechsupport@vishay.com 

This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SUD15N15-95** 

## Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C, unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ.a**|**Max.**|**Unit**|
|**Static**|||||||
|Drain-Source Breakdown Voltage|VDS|VGS= 0 V, ID= 250 µA|150|||V|
|Gate Threshold Voltage|VGS(th)|VDS= VGS, ID= 250 µA|2||||
|Gate-Body Leakage|IGSS|VDS= 0 V, VGS= ± 20 V|||± 100|nA|
|Zero Gate Voltage Drain Current|IDSS|VDS= 120 V, VGS= 0 V|||1|µA|
|||VDS= 120 V, VGS= 0 V, TJ= 125 °C|||50||
|||VDS= 120 V, VGS= 0 V, TJ= 175 °C|||250||
|On-State Drain Currentb|ID(on)|VDS=5 V, VGS= 10 V|25|||A|
|Drain-Source On-State Resistanceb|RDS(on)|VGS= 10 V, ID= 15 A||0.077|0.095||
|||VGS= 10 V, ID= 15 A, TJ= 125 °C|||0.190||
|||VGS= 10 V, ID= 15 A, TJ= 175 °C|||0.250||
|||VGS= 6 V, ID= 10 A||0.081|0.100||
|Forward Transconductanceb|gfs|VDS= 15 V, ID= 15 A||25||S|
|**Dynamic**a|||||||
|Input Capacitance|Ciss|VGS= 0 V, VDS= 25 V, f = 1 MHz||900||pF|
|Output Capacitance|Coss|||115|||
|Reverse Transfer Capacitance|Crss|||70|||
|Total Gate Chargec|Qg|VDS= 75 V, VGS= 10 V, ID= 15 A||20|25|nC|
|Gate-Source Chargec|Qgs|||5.5|||
|Gate-Drain Chargec|Qgd|||7|||
|Gate Resistance|Rg||1||3.2||
|Turn-On Delay Timec|td(on)|VDD= 75 V, RL= 5<br>ID 15 A, VGEN= 10 V, RG= 2.5||8|12|ns|
|Rise Timec|tr|||35|55||
|Turn-Off Delay Timec|td(off)|||17|25||
|Fall Timec|tf|||30|45||
|**Source-Drain Diode Ratings and Characteristic**(TC= 25 °C)|||||||
|Pulsed Current|ISM||||25|A|
|Diode Forward Voltageb|VSD|IF= 15 A, VGS= 0 V||0.9|1.5|V|
|Source-Drain Reverse Recovery Time|trr|IF= 15 A, dI/dt = 100 A/µs||55|85|ns|



Notes: 

a. Guaranteed by design, not subject to production testing. 

b. Pulse test; pulse width  300 µs, duty cycle  2 %. 

c. Independent of operating temperature. 

_Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ 

www.vishay.com 2 

Document Number: 71641 S13-0104-Rev. D, 21-Jan-13 

For technical questions, contact: pmostechsupport@vishay.com 

This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SUD15N15-95** 

Vishay Siliconix 

**==> picture [59 x 49] intentionally omitted <==**

## **TYPICAL CHARACTERISTICS** (25 °C unless noted) 

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**----- Start of picture text -----**<br>
25<br>VGS = 10 thru 6 V<br>20<br>15<br>5 V<br>10<br>5<br>3 V 4 V<br>0<br>0 2 4 6 8 10<br>VDS  -  Drain-to-Source Voltage (V)<br>Output Characteristics<br>40<br>TC = - 55 °C<br>32<br>25 °C<br>24 125 °C<br>16<br>8<br>0<br>0 5 10 15 20 25<br>ID  -  Drain Current (A)<br>Transconductance<br>1500<br>1200<br>Ciss<br>900<br>600<br>300 C rss<br>Coss<br>0<br>0 20 40 60 80 100<br>VDS  -  Drain-to-Source Voltage (V)<br>Capacitance<br>-  Drain Current (A)<br>I D<br>- Transconductance (S)<br>g fs<br>C  -  Capacitance (pF)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
25<br>20<br>15<br>10<br>TC = 125 °C<br>5<br>25 °C<br>- 55 °C<br>0<br>0 1 2 3 4 5 6<br>VGS  -  Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>0.14<br>0.12<br>0.10<br>VGS = 6 V<br>0.08<br>VGS = 10 V<br>0.06<br>0.04<br>0.02<br>0.00<br>0 5 10 15 20 25<br>ID  -  Drain Current (A)<br>On-Resistance vs. Drain Current<br>20<br>VDS = 75 V<br>16 I D  = 15 A<br>12<br>8<br>4<br>0<br>0 8 16 24 32 40<br>Qg  -  Total Gate Charge (nC)<br>Gate Charge<br>-  Drain Current (A)<br>I D<br>) <br>-  On-Resistance (<br>RDS(on)<br>-  Gate-to-Source Voltage (V)<br>V GS<br>**----- End of picture text -----**<br>


Document Number: 71641 S13-0104-Rev. D, 21-Jan-13 

www.vishay.com 3 

For technical questions, contact: pmostechsupport@vishay.com 

This document is subject to change without notice. 

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**SUD15N15-95** 

## Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

## **TYPICAL CHARACTERISTICS** (25 °C unless noted) 

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**----- Start of picture text -----**<br>
2.8<br>VGS = 10 V<br>2.4 ID = 15 A<br>2.0<br>1.6<br>1.2<br>0.8<br>0.4<br>0.0<br>- 50 - 25 0 25 50 75 100 125 150 175<br>TJ  -  Junction Temperature (°C)<br>(Normalized)<br>-  On-Resistance<br>RDS(on)<br>**----- End of picture text -----**<br>


**On-Resistance vs. Junction Temperature** 

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**----- Start of picture text -----**<br>
100<br>TJ = 150 °C<br>10<br>TJ = 25 °C<br>1<br>0 0.3 0.6 0.9 1.2<br>VSD  -  Source-to-Drain Voltage (V)<br>Source-Drain Diode Forward Voltage<br>-  Source Current (A)<br>I S<br>**----- End of picture text -----**<br>


## **THERMAL RATINGS** 

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**----- Start of picture text -----**<br>
20 100<br>15 Limited by R DS(on) * 10 µs<br>10 100 µs<br>10<br>1 1 ms<br>5 T C = 25 °C 10 ms100 ms<br>Single Pulse<br>1 s, DC<br>0<br>0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000<br>TC - Case Temperature (°C) VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Maximum Avalanche Drain Current Safe Operating Area<br>vs. Case Temperature<br>2<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.02<br>0.05<br>Single Pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>Square Wave Pulse Duration (sec)<br>Normalized Thermal Transient Impedance, Junction-to-Case<br>- Drain Current (A) - Drain Current (A)<br>I D I D<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


_Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71641._ 

www.vishay.com 4 

Document Number: 71641 S13-0104-Rev. D, 21-Jan-13 

For technical questions, contact: pmostechsupport@vishay.com 

This document is subject to change without notice. 

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **TO-252AA Case Outline** 

## **VERSION 1: FACILITY CODE = Y** 

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**----- Start of picture text -----**<br>
E A<br>C2<br>b3<br>E1<br>b b2 C<br>e<br>A1<br>e1<br>L3<br>D1<br>D<br>H<br>L4<br>L5 L<br>gage plane height (0.5 mm)<br>**----- End of picture text -----**<br>


|b|b2<br>e1<br>gage plane height (0.5 mm)<br>e|b2<br>e1<br>gage plane height (0.5 mm)<br>e|
|---|---|---|
||**MILLIMETERS**||
|**DIM.**|**MIN.**|**MAX.**|
|A|2.18|2.38|
|A1|-|0.127|
|b|0.64|0.88|
|b2|0.76|1.14|
|b3|4.95|5.46|
|C|0.46|0.61|
|C2|0.46|0.89|
|D|5.97|6.22|
|D1|4.10|-|
|E|6.35|6.73|
|E1|4.32|-|
|H|9.40|10.41|
|e|2.28 BSC||
|e1|4.56 BSC||
|L|1.40|1.78|
|L3|0.89|1.27|
|L4|-|1.02|
|L5|1.01|1.52|



## **Note** 

- Dimension L3 is for reference only 

Revision: 16-Dec-2019 

Document Number: 71197 

**1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Package Information** 

Vishay Siliconix 

**==> picture [59 x 48] intentionally omitted <==**

www.vishay.com 

## **VERSION 2: FACILITY CODE = N** 

**==> picture [338 x 254] intentionally omitted <==**

**----- Start of picture text -----**<br>
e<br>E A<br>b3<br>E1<br>e c2 E1/2<br>2x b2<br>2x e 3x b 0.25 C A B DETAIL "B" (b)<br>H<br>C<br>b1<br>GAUGE<br>PLANE SEATING DETAIL "B"<br>C C<br>L PLANE<br>(L1)<br>(3°) (3°)<br>θ<br>θ<br>L3 D1<br>D<br>H<br>L6<br>L5<br>L4<br>c<br>c1<br>L2 A1<br>θ<br>**----- End of picture text -----**<br>


||**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|
|**DIM.**|**MIN.**|**MAX.**|
|A|2.18|2.39|
|A1|-|0.13|
|b|0.65|0.89|
|b1|0.64|0.79|
|b2|0.76|1.13|
|b3|4.95|5.46|
|c|0.46|0.61|
|c1|0.41|0.56|
|c2|0.46|0.60|
|D|5.97|6.22|
|D1|5.21|-|
|E|6.35|6.73|
|E1|4.32|-|
|e|2.29 BSC||
|H|9.94|10.34|



||**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|
|**DIM.**|**MIN.**|**MAX.**|
|L|1.50|1.78|
|L1|2.74 ref.||
|L2|0.51 BSC||
|L3|0.89|1.27|
|L4|-|1.02|
|L5|1.14|1.49|
|L6|0.65|0.85|
||0°|10°|
|1|0°|15°|
|2|25°|35°|



## **Notes** 

- Dimensioning and tolerance confirm to ASME Y14.5M-1994 

- All dimensions are in millimeters. Angles are in degrees 

- Heat sink side flash is max. 0.8 mm 

- Radius on terminal is optional 

ECN: E19-0649-Rev. Q, 16-Dec-2019 DWG: 5347 

Revision: 16-Dec-2019 

Document Number: 71197 

**2** 

For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 

**Application Note 826** 

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## Vishay Siliconix 

## **RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)** 

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**----- Start of picture text -----**<br>
0.224<br>(5.690)<br>0.180 0.055<br>(4.572) (1.397)<br>0.243 (6.180)<br>0.420<br>(10.668)<br>0.087 (2.202)<br>0.090 (2.286)<br>**----- End of picture text -----**<br>


Recommended Minimum Pads Dimensions in Inches/(mm) 

> Return to Index Return to Index 

Document Number: 72594 Revision: 21-Jan-08 

www.vishay.com 

3 

**Legal Disclaimer Notice** Vishay 

www.vishay.com 

**==> picture [59 x 48] intentionally omitted <==**

## **Disclaimer** 

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.  To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications.  Such statements are not binding statements about the suitability of products for a particular application.  It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time.  All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.  Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. 

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. 

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.  Product names and markings noted herein may be trademarks of their respective owners. 

_**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ 

Revision: 01-Jan-2019 

Document Number: 91000 

**1** 



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- [Supplier page](https://es.farnell.com/vishay/sud15n15-95-e3/mosfet-n-ch-150v-15a-to-252/dp/1779255)
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