# Power MOSFET, N Channel, 650 V, 138 A, 0.012 ohm, MAX-247, Through Hole
**URL**: https://novapart.co/products/STY145N65M5/power-mosfet-n-channel-650-v-138-a-0012-ohm-max
**SKU**: STY145N65M5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €24.0900
**Stock**: 1000+
**Lead Time**: 127 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:138A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh M5 |
| Qualification | - |
| Power Dissipation | 625W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | MAX-247 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 138A |
| Drain Source On State Resistance | 0.012ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2807335/)
## **STY145N65M5**
## N-channel 650 V, 0.012 Ω typ., 138 A MDmesh™ M5 Power MOSFET in a Max247 package
Datasheet - production data
## **Features**
|**Order code**|**VDS @ TJmax**|**RDS(on) max.**|**ID**|
|---|---|---|---|
|STY145N65M5|710 V|0.015 Ω|138 A|
- Extremely low RDS(on)
- Low gate charge and input capacitance
- • Excellent switching performance
**==> picture [93 x 37] intentionally omitted <==**
**----- Start of picture text -----**
3
2
1
Max247
**----- End of picture text -----**
- 100% avalanche tested
## **Applications**
- Switching applications
**Figure 1: Internal schematic diagram**
## **Description**
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STY145N65M5|145N65M5|Max247|Tube|
This is information on a product in full production.
_www.st.com_
November 2015
DocID023718 Rev 3
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|**Contents**
**STY145N65M5**|**Contents**
**STY145N65M5**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 8**|
|**4**|**Package information ....................................................................... 9**|
||4.1
Max247 package information ............................................................ 9|
|**5**|**Revision history ............................................................................ 11**|
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**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|138|A|
|ID|Drain current (continuous) at TC= 100 °C|87|A|
|IDM
_(1)_|Drain current (pulsed)|552|A|
|PTOT|Total dissipation at TC= 25 °C|625|W|
|IAR|Avalanche current, repetitive or not repetitive (pulse width
limited byTjmax)|12|A|
|EAS|Single pulse avalanche energy (starting Tj= 25 °C, ID= IAR,
VDD= 50 V)|2420|mJ|
|dv/dt_(2)_|Peak diode recoveryvoltage slope|15|V/ns|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|150||
## **Notes:**
(1) Pulse width limited by safe operating area.
(2) ISD ≤ 138 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V.
**Table 3: Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case max|0.2|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|30|°C/W|
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**Electrical characteristics**
## **2 Electrical characteristics**
TC = 25 °C unless otherwise specified
**Table 4: On/off states**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown
voltage|VGS= 0 V, ID= 1 mA|650|||V|
|IDSS|Zero gate voltage drain
current|VGS= 0 V, VDS= 650 V|||10|µA|
|||VGS= 0 V, VDS= 650 V,
TC= 125 °C|||100|µA|
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ±25 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|3|4|5|V|
|RDS(on)|Static drain-source
on-resistance|VGS= 10 V, ID= 69 A||0.012|0.015|Ω|
**Table 5: Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,
VGS= 0 V|-|18500|-|pF|
|Coss|Output capacitance||-|413|-|pF|
|Crss|Reverse transfer
capacitance||-|11|-|pF|
|Co(er)
_(1)_|Equivalent output
capacitance energy
related|VGS= 0, VDS= 0 to 520 V|-|415|-|pF|
|Co(tr)
_(2)_|Equivalent output
capacitance time related||-|1950|-|pF|
|RG|Intrinsicgate resistance|f = 1 MHz, open drain|-|0.7|-|Ω|
|Qg|Totalgate charge|VDD= 520 V, ID= 69 A,
VGS= 10 V (see_Figure 15:_
_"Test circuit for gate charge_
_behavior"_)|-|414|-|nC|
|Qgs|Gate-source charge||-|114|-|nC|
|Qgd|Gate-drain charge||-|164|-|nC|
## **Notes:**
(1)Co(er) is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS
(2)Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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**Electrical characteristics**
**Table 6: Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(V)|Voltage delaytime|VDD= 400 V, ID= 85 A
RG= 4.7 Ω, VGS= 10 V
(see_Figure 16: "Test circuit_
_for inductive load switching_
_and diode recovery times"_
and_Figure 19: "Switching_
_time waveform"_)|-|255|-|ns|
|tr(V)|Voltage rise time||-|11|-|ns|
|tf(i)|Current fall time||-|82|-|ns|
|tC(off)|Crossing time||-|88|-|ns|
**Table 7: Source drain diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||138|A|
|ISDM,_(1)_|Source-drain current (pulsed)||-||552|A|
|VSD
_(2)_|Forward on voltage|VGS= 0 V, ISD= 138 A|-||1.5|V|
|trr|Reverse recoverytime|ISD= 138 A,
di/dt = 100 A/µs,
VDD= 100 V (see_Figure_
_16: "Test circuit for_
_inductive load switching_
_and diode recovery times"_)|-|568||ns|
|Qrr|Reverse recoverycharge||-|14.5||µC|
|IRRM|Reverse recovery current||-|51||A|
|trr|Reverse recoverytime|ISD= 138 A,
di/dt = 100 A/µs,
VDD= 100 V, Tj= 150 °C
(see_Figure 16: "Test circuit_
_for inductive load switching_
_and diode recovery times"_)|-|728||ns|
|Qrr|Reverse recoverycharge||-|24.5||µC|
|IRRM|Reverse recovery current||-|67||A|
## **Notes:**
(1) Pulse width is limited by safe operating area
(2) Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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**Electrical characteristics**
## **2.2 Electrical characteristics (curves)**
**==> picture [416 x 362] intentionally omitted <==**
**----- Start of picture text -----**
Figure 2: Safe operating area Figure 3: Thermal impedance
AM09125v1
K
δ =0.5
0.2
0.1
0.05
10 -1
0.02
0.01 Zth=k Rthj-c
Single pulse d=tp/t
tp
t
1010-2 -4 10 -3 10 -2 10 -1 tp [(s)]
Figure 4: Output characteristics Figure 5: Transfer characteristics
AM17901v1 AM17902v1
ID (A) ID
VGS=10V 9V (A) VDS=30V
300 300
8V
250 250
200 200
150 150
7V
100 100
50 50
6V
0 0
0 5 10 15 20 25 VDS(V) 0 1 2 3 4 5 6 7 8 VGS(V)
**----- End of picture text -----**
**Figure 6: Gate charge vs gate-source voltage**
**==> picture [163 x 145] intentionally omitted <==**
**Figure 7: Static drain-source on-resistance**
**==> picture [170 x 146] intentionally omitted <==**
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**Electrical characteristics**
**==> picture [394 x 177] intentionally omitted <==**
**----- Start of picture text -----**
Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage
vs temperature
C AM15553v1 VGS(th) AM08899v1
(pF) (norm)
1.10
100000 ID= 250µA
V DS = V GS
Ciss
10000 1.00
1000
0.90
Coss
100 f=1 MHz
0.80
10 Crss
1 0.70
0.1 1 10 100 VDS(V) -50 -25 0 25 50 75 100 TJ(°C)
**----- End of picture text -----**
**Figure 10: Normalized on-resistance vs Figure 11: Normalized V(BR)DSS vs temperature temperature**
**==> picture [383 x 145] intentionally omitted <==**
**----- Start of picture text -----**
RDS(on) AM08900v1 V(BR)DSS AM10399v1
(norm) (norm)
2.1 1.08
ID = 69A ID = 1mA
1.06
VGS= 10V
1.7 1.04
1.02
1.3 1.00
0.98
0.9
0.96
0.94
0.5 0.92
-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)
**----- End of picture text -----**
**Figure 12: Output capacitance stored energy**
**==> picture [166 x 147] intentionally omitted <==**
**Figure 13: Switching losses vs gate resistance**
**==> picture [167 x 145] intentionally omitted <==**
**----- Start of picture text -----**
AM15555v1
E (µJ)
9000 VDD=400 V Eon
VGS=10 V
8000 ID=85 A
7000
6000
5000
4000 Eoff
3000
2000
1000
0
0 10 20 30 40 RG(W)
**----- End of picture text -----**
The previous figure Eon includes reverse recovery of a SiC diode.
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**Test circuits**
## **3 Test circuits**
**==> picture [416 x 375] intentionally omitted <==**
**----- Start of picture text -----**
Figure 14: Test circuit for resistive load Figure 15: Test circuit for gate charge
switching times behavior
Figure 16: Test circuit for inductive load Figure 17: Unclamped inductive load test
switching and diode recovery times circuit
**----- End of picture text -----**
**==> picture [403 x 169] intentionally omitted <==**
**----- Start of picture text -----**
Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform
Concept waveform for Indu ctive Load Turn-off
Id
90%Vds 90%Id
Tdelay -off
Vgs
90%Vgs on
Vgs(I(t ))
10%Vds 10%Id
Vds
Trise Tfall
Tcross - over AM05540v2_for_M5
**----- End of picture text -----**
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**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
## **4.1 Max247 package information**
**Figure 20: Max247 package outline**
**==> picture [406 x 482] intentionally omitted <==**
**----- Start of picture text -----**
0094330_Rev_D
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**Package information**
**Table 8: Max247 package mechanical data**
|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.70|-|5.30|
|A1|2.20|-|2.60|
|b|1.00|-|1.40|
|b1|2.00|-|2.40|
|b2|3.00|-|3.40|
|c|0.40|-|0.80|
|D|19.70|-|20.30|
|e|5.35|-|5.55|
|E|15.30|-|15.90|
|L|14.20|-|15.20|
|L1|3.70|-|4.30|
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**Revision history**
## **5 Revision history**
**Table 9: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|25-Sep-2012|1|First release.|
|17-Jan-2013|2|Modified: IARand EASvalues
Modified: typical values on Table 5, 6 and 7|
|13-Nov-2015|3|Updated title, features and description on cover page.
Document status promoted from preliminary to production data.
Modified:_Table 2: "Absolute maximum ratings"_and_Table 3: "Thermal_
_data"_
Updated:_Figure 4: "Output characteristics"_and_Figure 5: "Transfer_
_characteristics"_
Minor text changes.|
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**STY145N65M5**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved
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## Links
- [View this product on Novapart](https://novapart.co/products/STY145N65M5/power-mosfet-n-channel-650-v-138-a-0012-ohm-max)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/sty145n65m5/mosfet-n-ch-650v-138a-max-247/dp/2807335)
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