# Power MOSFET, N Channel, 1.5 kV, 8 A, 1.8 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2098402/)

**URL**: https://novapart.co/products/STW9N150/power-mosfet-n-channel-15-kv-8-a-18-ohm-to-247
**SKU**: STW9N150
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.1200
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:1.5kV; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 320W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 1.5kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8A |
| Drain Source On State Resistance | 1.8ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098402/)

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## **STW9N150** N-channel 1500 V - 1.8 Ω - 8 A - TO-247 ver hi h volta e PowerMESH™ Power MOSFET y g g 

## **Features** 

|**Type**|**VDSS**|**RDS(on)**|**ID**|**Pw**|
|---|---|---|---|---|
|STW9N150|1500 V|< 2.5Ω|8 A|320 W|



- 100% avalanche tested 

- Avalanche ruggedness 

- Gate charge minimized 

- Very low intrinsic capacitances 

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3<br>2<br>1<br>TO-247<br>**----- End of picture text -----**<br>


- High speed switching 

- Very low on-resistance 

## **Application** 

- Switching applications 

## **Description** 

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. 

## **Figure 1. Internal schematic diagram** 

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## **Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STW9N150|9N150|TO-247|Tube|



1/12 

January 2008 

Rev 2 

_www.st.com_ 

**Contents** 

**STW9N150** 

## **Contents** 

|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|---|---|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|



2/12 

**STW9N150** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage (VGS= 0)|1500|V|
|VGS|Gate- source voltage|± 30|V|
|ID|Drain current (continuous) at TC= 25 °C|8|A|
|ID|Drain current (continuous) at TC= 100 °C|5|A|
|IDM<br>(1)|Drain current (pulsed)|32|A|
|PTOT|Total dissipation at TC= 25 °C|320|W|
||Derating factor|2.56|W/°C|
|TJ<br>Tstg|Operating junction temperature<br>Storage temperature|-55 to 150|°C|



1. Pulse width limited by safe operating area 

## **Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case max|0.39|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|50|°C/W|
|TJ|Maximum lead temperature for soldering purpose|300|°C/W|



## **Table 4. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Max value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by TJmax)|8|A|
|EAS|Single pulse avalanche energy<br>(starting TJ= 25 °C, ID= IAR, VDD= 50 V)|720|mJ|



3/12 

**STW9N150** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(Tcase =25°C unless otherwise specified) 

## **Table 5. On /off states** 

|**Table 5.**|**On /off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|1500|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= Max rating<br>VDS= Max rating, TC=125 °C|||10<br>500|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 30 V|||± 100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on|Static drain-source on<br>resistance|VGS= 10 V, ID= 4 A||1.8|2.5|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward<br>transconductance|VDS= 15 V, ID= 4 A||7.5||S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 25 V, f = 1 MHz, VGS= 0||3255<br>294<br>22.4||pF<br>pF<br>pF|
|Coss eq.|Equivalent Output<br>capacitance|VGS= 0, VDS= 0 to 1200 V||118||pF|
|Rg|Gate input resistance|f=1MHz Gate DC Bias=0<br>Test signal level=20 mV<br>open drain||2.4||Ω|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 1200 V, ID= 8 A,<br>VGS= 10 V<br>_(see Figure 15)_||89.3<br>15.8<br>50.4||nC<br>nC<br>nC|



1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 

4/12 

**STW9N150** 

**Electrical characteristics** 

## **Table 7. Switching times** 

|**Table 7.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off-delay time<br>Fall time|VDD= 750 V, ID= 4 A,<br>RG= 4.7Ω,VGS= 10 V<br>_(see Figure 14)_||41<br>14.7<br>86<br>52||ns<br>ns<br>ns<br>ns|



## **Table 8. Source drain diode** 

|**Table 8.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|ISD<br>ISDM<br>(1)|Source-drain current<br>Source-drain current (pulsed)||||8<br>32|A<br>A|
|VSD<br>(2)|Forward on voltage|ISD= 8 A, VGS= 0|||1.6|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 8 A, di/dt = 100 A/µs<br>VDD= 60 V<br>_(see Figure 16)_||988<br>9.5<br>19.3||ns<br>µC<br>A|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 8 A, di/dt = 100 A/µs<br>VDD= 60 V TJ= 150 °C<br>_(see Figure 16)_||884<br>8.2<br>18.6||ns<br>µC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

5/12 

**STW9N150** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area Figure 3. Thermal impedance** 

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**Figure 4. Output characteristics** 

**Figure 5. Transfer characteristics** 

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**Figure 6. Normalized BVDSS vs temperature** 

**Figure 7. Static drain-source on resistance** 

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**----- Start of picture text -----**<br>
RDS(on) HV41520<br>(Ω)<br>1.9<br>VGS =10V<br>1.8<br>1.7<br>1.6<br>1.5<br>0 1 2 3 4 5 6 ID(A)<br>**----- End of picture text -----**<br>


6/12 

**STW9N150** 

**Electrical characteristics** 

## **Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations** 

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**----- Start of picture text -----**<br>
HV41500<br>VGS VDD =1200V<br>(V) ID =8A<br>VGS =10V<br>10<br>8<br>6<br>4<br>2<br>0<br>0 20 40 60 80 100 Qg (nC)<br>**----- End of picture text -----**<br>


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**Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature** 

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**Figure 12. Source-drain diode forward characteristics** 

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**Figure 13. Maximum avalanche energy vs temperature** 

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**----- Start of picture text -----**<br>
HV41480<br>EAS<br>(mJ)<br>700<br>ID = 8A<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 25 50 75 100 125 TJ (˚C)<br>**----- End of picture text -----**<br>


7/12 

**STW9N150** 

**Test circuits** 

## **3 Test circuits** 

**Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit resistive load** 

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**Figure 16. Test circuit for inductive load switching and diode recovery times** 

**Figure 17. Unclamped Inductive load test circuit** 

**==> picture [215 x 126] intentionally omitted <==**

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**Figure 18. Unclamped inductive waveform** 

**Figure 19. Switching time waveform** 

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8/12 

**STW9N150** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: _www.st.com_ 

9/12 

**STW9N150** 

**Package mechanical data** 

## **TO-247 MECHANICAL DATA** 

|**TO-247 MECHANICAL DATA**|**TO-247 MECHANICAL DATA**|**TO-247 MECHANICAL DATA**|**TO-247 MECHANICAL DATA**|**TO-247 MECHANICAL DATA**|**TO-247 MECHANICAL DATA**|**TO-247 MECHANICAL DATA**|
|---|---|---|---|---|---|---|
||||||||
|**DIM.**|**mm.**|||**inch**|||
||**MIN.**|**TYP**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.85||5.15|0.19||0.20|
|A1|2.20||2.60|0.086||0.102|
|b|1.0||1.40|0.039||0.055|
|b1|2.0||2.40|0.079||0.094|
|b2|3.0||3.40|0.118||0.134|
|c|0.40||0.80|0.015||0.03|
|D|19.85||20.15|0.781||0.793|
|E|15.45||15.75|0.608||0.620|
|e||5.45|||0.214||
|L|14.20||14.80|0.560||0.582|
|L1|3.70||4.30|0.14||0.17|
|L2||18.50|||0.728||
|øP|3.55||3.65|0.140||0.143|
|øR|4.50||5.50|0.177||0.216|
|S||5.50|||0.216||
||||||||



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**STW9N150** 

**Revision history** 

## **5 Revision history** 

**Table 9.** 

**Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|24-May-2007|1|First release|
|04-Jan-2007|2|Document status promoted from preliminary data to datasheet|



11/12 

**STW9N150** 

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12/12 



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