# Power MOSFET, N Channel, 800 V, 6.2 A, 1.5 ohm, TO-247, Through Hole ![Product image](https://novapart.co/image/farnell:9936041/) **URL**: https://novapart.co/products/STW8NK80Z/power-mosfet-n-channel-800-v-62-a-15-ohm-to-247 **SKU**: STW8NK80Z **Manufacturer**: STMICROELECTRONICS **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €0.6890 **Stock**: 10+ ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipatio ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 140W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-247 | | Drain Source Voltage Vds | 800V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 6.2A | | Drain Source On State Resistance | 1.5ohm | | Gate Source Threshold Voltage Max | 3.75V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:9936041/) **STP8NK80Z - STP8NK80ZFP STW8NK80Z** N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET **Features Type VDSS RDS(on) ID** STP8NK80Z 800 V < 1.5 Ω 6.2 A 3 2 STP8NK80ZFP 800 V < 1.5 Ω 6.2 A 1 **TO-220 TO-220FP** STW8NK80Z 800 V < 1.5 Ω 6.2 A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances » **TO-247** ~~a~~ ■ Very good manufacturing repeatability ~~N~~ **Description Figure 1. Internal schematic diagram** The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. ## **Application** ■ Switching applications **Table 1. Device summary Order codes Marking Package Packaging** STP8NK80Z P8NK80Z TO-220 Tube STP8NK80ZFP P8NK80ZFP TO-220FP Tube STW8NK80Z W8NK80Z TO-247 Tube ~~——~~ 1/15 July 2007 Rev 5 _www.st.com_ |**Contents**|**STP8NK80Z - STP8NK80ZFP - STW8NK80Z**| |---|---| |**Contents**|| |**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**| ||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**3**|**Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**| |**5**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**| 2/15 **STP8NK80Z - STP8NK80ZFP - STW8NK80Z** **Electrical ratings** ## **1 Electrical ratings** ## **Table 2. Absolute maximum ratings** |**Table 2.**|**Absolute maximum ratings**|||| |---|---|---|---|---| |**Symbol**|**Parameter**|**Value**||**Unit**| |||**TO-220 - TO-247**|**TO-220FP**|| |VDS|Drain-source voltage (VGS= 0)|800||V| |VGS|Gate- source voltage|± 30||V| |ID|Drain current (continuous) at TC= 25°C|6.2|6.2(1)|A| |ID|Drain current (continuous) at TC= 100°C|3.9|3.9(1)|A| |IDM
(2)|Drain current (pulsed)|24.8|24.8(1)|A| |PTOT|Total dissipation at TC= 25°C|140|30|W| ||Derating factor|1.12|0.24|W/°C| |VESD(G-S)|Gate source ESD(HBM-C=100pF, R=1.5KΩ)|4000||V| |dv/dt
(3)|Peak diode recovery voltage slope|4.5||V/ns| |VISO|Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s; Tc= 25°C)|-|2500|V| |Tj
Tstg|Max operating Junction temperature
Storage temperature|-55 to 150||°C| 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 6.2 A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. ## **Table 3. Thermal data** |**Table 3.**|**Thermal data**||||| |---|---|---|---|---|---| |**Symbol**|**Parameter**|**Value**|||**Unit**| |||**TO-220**|**TO-220FP**|**TO-247**|| |Rthj-case|Thermal resistance junction-case max|0.89|4.2|0.89|°C/W| |Rthj-amb|Thermal resistance junction-ambient max|62.5||50|°C/W| |Tl|Maximum lead temperature for soldering
purpose|300|||°C| ## **Table 4. Avalanche characteristics** |**Table 4.**|**Avalanche characteristics**||| |---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Unit**| |IAR|Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj Max)|6.2|A| |EAS|Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)|300|mJ| 3/15 **STP8NK80Z - STP8NK80ZFP - STW8NK80Z** **Electrical characteristics** ## **2 Electrical characteristics** (TCASE=25°C unless otherwise specified) ## **Table 5. On/off states** |**Table 5.**|**On/off states**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |V(BR)DSS|Drain-source
Breakdown voltage|ID=1mA, VGS= 0|800|||V| |IDSS|Zero gate voltage
Drain current (VGS= 0)|VDS= Max rating
VDS= Max rating, @125°C|||1
50|µA
µA| |IGSS|Gate-body leakage
Current (VDS= 0)|VGS= ± 20 V|||± 10|µA| |VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100 µA|3|3.75|4.5|V| |RDS(on)|Static drain-source on
resistance|VGS= 10 V, ID= 3.1 A||1.3|1.5|Ω| ## **Table 6. Dynamic** |**Table 6.**|**Dynamic**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |gfs
(1)|Forward transconductance|VDS= 15v, ID= 3.1 A||5.2||S| |Ciss
Coss
Crss|Input capacitance
Output capacitance
Reverse transfer capacitance|VDS= 25 V, f = 1 MHz,
VGS= 0||1320
143
27||pF
pF
pF| |Coss eq.
(2)|Equivalent output
capacitance|VDS=0V, VDS= 0V to 640V||58||pF| |td(on)
tr
tr(off)
tr|Turn-on delay time
Rise time
Turn-off delay time
Fall time|VDD= 400 V, ID= 3.1 A,
RG= 4.7Ω,VGS= 10 V
(see_Figure 21_)||17
30
48
28||ns
ns
ns
ns| |Qg
Qgs
Qgd|Total gate charge
Gate-source charge
Gate-drain charge|VDD= 640 V, ID= 6.2 A,
VGS= 10 V||46
8.5
25||nC
nC
nC| |tr(Voff)
tr
tc|Off-voltage rise time
Fall time
Cross-over time|VDD= 640 V, ID= 6.2 A,
RG= 4.7Ω,VGS= 10 V
(see_Figure 23_)||9
9
18||ns
ns
ns| 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 4/15 **STP8NK80Z - STP8NK80ZFP - STW8NK80Z** **Electrical characteristics** ## **Table 7. Source drain diode** |**Table 7.**|**Source drain diode**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |ISD
ISDM
(1)|Source-drain current
Source-drain current (pulsed)||||6.2
24.8|A
A| |VSD
(2)|Forward on voltage|ISD= 6.2 A, VGS= 0|||1.6|V| |trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD= 6.2 A, di/dt = 100 A/µs
VDD= 50 V, Tj = 150°C
(see_Figure 23_)||460
2990
13||ns
nC
A| 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Pulse width limited by safe operating area |**Table 8.**
**Gate-source zener diode**|**Table 8.**
**Gate-source zener diode**|**Table 8.**
**Gate-source zener diode**|**Table 8.**
**Gate-source zener diode**|**Table 8.**
**Gate-source zener diode**|**Table 8.**
**Gate-source zener diode**|**Table 8.**
**Gate-source zener diode**| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |BVGSO
(1)|Gate-source breakdown voltage|Igs=± 1mA (Open Drain)|30|||V| 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 5/15 **STP8NK80Z - STP8NK80ZFP - STW8NK80Z** **Electrical characteristics** ## **2.1 Electrical characteristics (curves)** **Figure 2. Safe operating area for TO-220** **Figure 3. Thermal impedance for TO-220** **==> picture [155 x 153] intentionally omitted <==** **==> picture [149 x 149] intentionally omitted <==** **Figure 4. Safe operating area for TO-220FP** **Figure 5. Thermal impedance for TO-220FP** **==> picture [155 x 153] intentionally omitted <==** **==> picture [149 x 149] intentionally omitted <==** **Figure 6. Safe operating area for TO-247** **Figure 7. Thermal impedance for TO-247** **==> picture [155 x 152] intentionally omitted <==** **==> picture [149 x 149] intentionally omitted <==** 6/15 **STP8NK80Z - STP8NK80ZFP - STW8NK80Z** **Electrical characteristics** ## **Figure 8. Output characteristics** **==> picture [148 x 149] intentionally omitted <==** **Figure 10. Transconductance** **==> picture [150 x 149] intentionally omitted <==** **Figure 12. Gate charge vs gate-source voltage** **==> picture [150 x 151] intentionally omitted <==** ## **Figure 9. Transfer characteristics** **==> picture [151 x 151] intentionally omitted <==** **Figure 11. Static drain-source on resistance** **==> picture [149 x 149] intentionally omitted <==** **Figure 13. Capacitance variations** **==> picture [149 x 149] intentionally omitted <==** 7/15 **STP8NK80Z - STP8NK80ZFP - STW8NK80Z** **Electrical characteristics** **Figure 14. Normalized gate threshold voltage vs temperature** **==> picture [149 x 149] intentionally omitted <==** **Figure 16. Source-drain diode forward characteristic** **==> picture [147 x 147] intentionally omitted <==** **Figure 15. Normalized on resistance vs temperature** **==> picture [147 x 147] intentionally omitted <==** **Figure 17. Normalized BVDSS vs temperature** **==> picture [149 x 149] intentionally omitted <==** **Figure 18. Maximum avalanche energy vs temperature** **==> picture [147 x 147] intentionally omitted <==** 8/15 **STP8NK80Z - STP8NK80ZFP - STW8NK80Z** **Test circuit** ## **3 Test circuit** **Figure 19. Unclamped inductive load test circuit** **Figure 20. Unclamped inductive waveform** **==> picture [192 x 127] intentionally omitted <==** **==> picture [179 x 147] intentionally omitted <==** **Figure 21. Switching times test circuit for resistive load** **Figure 22. Gate charge test circuit** **==> picture [443 x 143] intentionally omitted <==** **Figure 23. Test circuit for inductive load switching and diode recovery times** **==> picture [208 x 122] intentionally omitted <==** 9/15 **STP8NK80Z - STP8NK80ZFP - STW8NK80Z** **Package mechanical data** ## **4 Package mechanical data** In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: _www.st.com_ 10/15 **STP8NK80Z - STP8NK80ZFP - STW8NK80Z** **Package mechanical data** ## **TO-220 mechanical data** |**Dim**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**| |---|---|---|---|---|---|---| ||**Min**|**Typ**|**Max**|**Min**|**Typ**|**Max**| |A|4.40||4.60|0.173||0.181| |b|0.61||0.88|0.024||0.034| |b1|1.14||1.70|0.044||0.066| |c|0.49||0.70|0.019||0.027| |D|15.25||15.75|0.6||0.62| |D1||1.27|||0.050|| |E|10||10.40|0.393||0.409| |e|2.40||2.70|0.094||0.106| |e1|4.95||5.15|0.194||0.202| |F|1.23||1.32|0.048||0.051| |H1|6.20||6.60|0.244||0.256| |J1|2.40||2.72|0.094||0.107| |L|13||14|0.511||0.551| |L1|3.50||3.93|0.137||0.154| |L20||16.40|||0.645|| |L30||28.90|||1.137|| |∅P|3.75||3.85|0.147||0.151| |Q|2.65||2.95|0.104||0.116| **==> picture [286 x 241] intentionally omitted <==** 11/15 **STP8NK80Z - STP8NK80ZFP - STW8NK80Z** **Package mechanical data** **==> picture [405 x 566] intentionally omitted <==** **----- Start of picture text -----**
TO-220FP MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L3
L6
L7
1 2 3
L5
L2 L4
F1 F
G
F2
E
A
D
B
G1
H
**----- End of picture text -----**
12/15 **STP8NK80Z - STP8NK80ZFP - STW8NK80Z** **Package mechanical data** |||||||||||**inch**
**TYP.**
**MAX.**
0.20
0.102
0.055
0.094
0.134
0.03
0.793
0.620
0.214
0.582
0.17
0.728
0.143
0.216
0.216|**inch**
**TYP.**
**MAX.**
0.20
0.102
0.055
0.094
0.134
0.03
0.793
0.620
0.214
0.582
0.17
0.728
0.143
0.216
0.216| |---|---|---|---|---|---|---|---|---|---|---|---| |||||**T**|**O-247 MECHANICAL DATA**||||||| ||||||||||||| ||**DIM.**||||**mm.**|||||**inch**|| |||**M**|**I**|**N.**
|**TYP**||**MAX.**||**MIN.**|**TYP.**|**MAX.**| ||A|4|.8|5|||5.15||0.19||0.20| ||A1|2|.2|0|||2.60||0.086||0.102| ||b||1.|0|||1.40||0.039||0.055| ||b1||2.|0|||2.40||0.079||0.094| ||b2||3.|0|||3.40||0.118||0.134| ||c|0|.4|0|||0.80||0.015||0.03| ||D|1|9.|85|||20.15||0.781||0.793| ||E|1|5.|45|||15.75||0.608||0.620| ||e|||5|.45|||||0.214|| ||L|1|4.|20|||14.80||0.560||0.582| ||L1|3|.7|0|||4.30||0.14||0.17| ||L2|||1|8.50|||||0.728|| ||øP|3|.5|5|||3.65||0.140||0.143| ||øR|4|.5|0|||5.50||0.177||0.216| ||S|||5|.50|||||0.216|| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| ||||||||||||| 13/15 **STP8NK80Z - STP8NK80ZFP - STW8NK80Z** **Revision history** ## **5 Revision history** ## **Table 9. Revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |09-Sep-2004|2|Complete version| |17-Aug-2006|3|New template, no content change| |20-Apr-2007|4|Typo errors on_Table 6_| |02-Jul-2007|5|_Table 2_has been updated| 14/15 **STP8NK80Z - STP8NK80ZFP - STW8NK80Z** ## **Please Read Carefully:** Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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