# Power MOSFET, N Channel, 300 V, 30 A, 0.037 ohm, TO-247, Through Hole ![Product image](https://novapart.co/image/farnell:1752218/) **URL**: https://novapart.co/products/STW75NF30/power-mosfet-n-channel-300-v-30-a-0037-ohm-to-247 **SKU**: STW75NF30 **Manufacturer**: STMICROELECTRONICS **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.4300 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Channel Type | N Channel | | Power Dissipation | 320W | | Transistor Mounting | Through Hole | | Transistor Polarity | N Channel | | Power Dissipation Pd | 320W | | Rds(On) Test Voltage | 10V | | On Resistance Rds(On) | 0.037ohm | | Transistor Case Style | TO-247 | | Drain Source Voltage Vds | 300V | | Operating Temperature Max | 150°C | | Continuous Drain Current Id | 30A | | Drain Source On State Resistance | 0.037ohm | | Gate Source Threshold Voltage Max | 3V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1752218/) **==> picture [61 x 39] intentionally omitted <==** ## **STW75NF30** N-channel 300 V, 0.037 Ω , 60 A, TO-247 low gate charge STripFET™ Power MOSFET ## **Features** |**Features**||||| |---|---|---|---|---| |**Type**|**VDSS**|**RDS(on)**
**max**|**ID**|**pW**| |STW75NF30|300 V|< 0.045Ω|60 A|320 W| - Exceptional dv/dt capability - Low gate charge - 100% Avalanche tested ## **Application** **==> picture [108 x 111] intentionally omitted <==** **----- Start of picture text -----**
3
2
1
TO-247
**----- End of picture text -----**
- Switching applications ## **Description** This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters ## **Figure 1. Internal schematic diagram** **==> picture [144 x 152] intentionally omitted <==** **Table 1. Device summary** |**Order code**|**Marking**|**Package**|**Packaging**| |---|---|---|---| |STW75NF30|75NF30|TO-247|Tube| 1/12 July 2008 Rev 3 _www.st.com_ **Contents** **STW75NF30** ## **Contents** |**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |---|---| |**2**|**Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**| ||2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**| |**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**| |**5**|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**| 2/12 **STW75NF30** **Electrical ratings** ## **1 Electrical ratings** ## **Table 1. Absolute maximum ratings** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VDS|Drain-source voltage (VGS= 0)|300|V| |VGS|Gate-source voltage|± 20|V| |ID|Drain current (continuous) at TC= 25 °C|60|A| |ID|Drain current (continuous) at TC= 100 °C|37.8|A| |IDM
(1)|Drain current (pulsed)|240|A| ||Derating factor|2.56|W/°C| |dv/dt(2)|Peak diode recovery voltage slope|12|V/ns| |PTOT|Total dissipation at TC= 25 °C|320|W| |TJ
Tstg|Operating junction temperature
Storage temperature|-55 to 150|°C| 1. Pulse width limited by safe operating area 2. ISD ≤ 60A, di/dt ≤ 200A/µs, VDD ≤ 80% V(BR)DSS ## **Table 2. Thermal resistance** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |Rthj-case|Thermal resistance junction-case max|0.39|°C/W| |Rthj-amb|Thermal resistance junction-ambient max|50|°C/W| |Tl|Maximum lead temperature for soldering
purpose|300|°C| **Table 3. Avalanche characteristics** |**Table 3.**|**Avalanche characteristics**||| |---|---|---|---| |**Symbol**|**Parameter**|**Max. value**|**Unit**| |IAR|Avalanche current, repetitive or not-repetitive
(pulse width limited by TJmax)|50|A| |EAS|Single pulse avalanche energy
(starting TJ= 25 °C, ID= IAR, VDD= 50 V)|400|mJ| 3/12 **STW75NF30** **Electrical characteristics** ## **2 Electrical characteristics** (TCASE=25°C unless otherwise specified) ## **Table 4. On/off states** |**Table 4.**|**On/off states**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |V(BR)DSS|Drain-source breakdown
voltage|ID= 1 mA, VGS= 0|300|||V| |IDSS|Zero gate voltage drain
current (VGS= 0)|VDS= Max rating,
VDS= Max rating @125 °C|||1
10|µA
µA| |IGSS|Gate body leakage current
(VDS= 0)|VDS= ± 20 V|||±100|nA| |VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V| |RDS(on)|Static drain-source on
resistance|VGS= 10 V, ID= 30 A||0.037|0.045|Ω| ## **Table 5. Dynamic** |**Table 5.**|**Dynamic**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |gfs
(1)|Forward transconductance|VDS= 15 V,ID= 30 A||40||S| |Ciss
Coss
Crss|Input capacitance
Output capacitance
Reverse Transfer
Capacitance|VDS= 25 V, f = 1 MHz,
VGS= 0||5930
837
110||pF
pF
pF| |Coss eq.
(2)|Equivalent output
capacitance|VDS= 0 to 240 V, VGS= 0||462||pF| |RG|Intrinsic gate resistance|f = 1 MHz open drain||1.55||Ω| |Qg
Qgs
Qgd|Total gate charge
Gate-source charge
Gate-drain charge|VDD= 240 V, ID= 30 A,
VGS= 10 V
_(see Figure 15)_||164
36
69||nC
nC
nC| 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/12 **STW75NF30** **Electrical characteristics** **Table 6. Switching times** |**Table 6.**|**Switching times**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |td(on)
tr
td(off)
tf|Turn-on delay time
Rise time
Turn-off delay time
Fall time|VDD= 150 V, ID= 30 A
RG= 4.7Ω, VGS= 10 V,
_(see Figure 14)_||115
87
141
101||ns
ns
ns
ns| **Table 7. Source drain diode** |**Table 7.**|**Source drain diode**|||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |ISD
ISDM
(1)|Source-drain current
Source-drain current
(pulsed)||||60
240|A
A| |VSD
(2)|Forward on voltage|ISD= 60 A, VGS= 0|||1.6|V| |trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD= 60 A,VDD= 60 V
di/dt = 100 A/µs
_(see Figure 19)_||252
2.5
20||ns
µC
A| |trr
Qrr
IRRM|Reverse recovery time
Reverse recovery charge
Reverse recovery current|ISD=60 A, VDD= 60 V
di/dt = 100 A/µs
Tj= 150°C_(see Figure 19)_||316
3.7
23.2||ns
µC
A| 1. Pulse with limited by maximum temperature 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/12 **STW75NF30** **Electrical characteristics** ## **2.1 Electrical characteristics (curves)** **Figure 2. Safe operating area Figure 3. Thermal impedance** **==> picture [460 x 171] intentionally omitted <==** **----- Start of picture text -----**
AM00116v1
ID
(A)
10µs
10 [2]
100µs
10 [1]
1ms
10ms
10 [0]
10 [-1]
10 [-1] 10 [0] 10 [1] 10 [2] VDS(V)
DS(on)
Operation in this area is
limited by max R
**----- End of picture text -----**
**Figure 4. Output characteristics** **Figure 5. Transfer characteristics** **==> picture [461 x 171] intentionally omitted <==** **----- Start of picture text -----**
AM00117v1 AM00118v1
ID(A) ID(A)
VGS=10V
180 180
160 160
140 140
6V
120 120
100 100
80 80
5V
60 60
40 40
20 20
4V
0 10 20 VDS(V) 0 2 4 6 VGS(V)
**----- End of picture text -----**
**Figure 6. Normalized BVDSS vs temperature** **Figure 7. Static drain-source on resistance** **==> picture [461 x 171] intentionally omitted <==** **----- Start of picture text -----**
BVDSS AM00124v1 AM00122v1
(norm) RDS(on)
(Ω)
1.15
0.035
1.05
1.0
0.0345
0.95
0.9
0.034
0.85
0.8
0.0335
-75 -50 -25 0 25 50 75 100 125 150 TJ(°C) 5 10 15 20 25 30 ID(A)
**----- End of picture text -----**
6/12 **STW75NF30** **Electrical characteristics** **Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations** **==> picture [462 x 597] intentionally omitted <==** **----- Start of picture text -----**
AM00119v1 AM00120v1
VGS C
(V) (pF)
VGS=10V
12 ID=60A
VDD=240V
10 [4] Ciss
10
8
10 [3]
6 Coss
4
10 [2] Crss
2
10 [1]
0 50 100 150 200 Qg(nC) 10 [-1] 10 [0] 10 [1] 10 [2] V [DS] (V)
Figure 10. Normalized gate threshold volatge Figure 11. Normalized on resistancevs
vs temperature temperature
VGS(th) AM00125v1 RDS(on) AM00126v1
(norm)
1.1 2.5
1.0
2.0
0.9
1.5
0.8
1.0
0.7
0.6 0.5
0.5
0
-75 -50 -25 0 25 50 75 100 125 150 TJ(°C) -75 -50 -25 0 25 50 75 100 125 150 TJ(°C)
Figure 12. Source-drain diode forward Figure 13. Maximum avalanche energy vs
characteristics temperature
AM00123v1 AM00121v1
VDS
EAS
(V) TJ=-50°C (mJ)
0.9 400
25°C 350
0.8
300
150°C
0.7 250
200
0.6
150
100
0.5
50
0.4 0
0 10 20 30 40 50 60 ISD(A) 0 30 60 90 120 TJ(°C)
**----- End of picture text -----**
7/12 **STW75NF30** **Test circuits** ## **3 Test circuits** **Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit resistive load** **==> picture [209 x 88] intentionally omitted <==** **==> picture [179 x 121] intentionally omitted <==** **Figure 16. Test circuit for inductive load switching and diode recovery times** **Figure 17. Unclamped inductive load test circuit** **==> picture [200 x 117] intentionally omitted <==** **==> picture [179 x 119] intentionally omitted <==** **Figure 18. Unclamped inductive waveform** **Figure 19. Switching time waveform** **==> picture [164 x 134] intentionally omitted <==** **==> picture [192 x 151] intentionally omitted <==** 8/12 **STW75NF30** **Package mechanical data** ## **4 Package mechanical data** In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: _www.st.com_ 9/12 **STW75NF30** **Package mechanical data** ## **TO-247 Mechanical data** |**Dim.**||**mm.**|| |---|---|---|---| ||**Min.**|**Typ**|**Max.**| |A|4.85||5.15| |A1|2.20||2.60| |b|1.0||1.40| |b1|2.0||2.40| |b2|3.0||3.40| |c|0.40||0.80| |D|19.85||20.15| |E|15.45||15.75| |e||5.45|| |L|14.20||14.80| |L1|3.70||4.30| |L2||18.50|| |øP|3.55||3.65| |øR|4.50||5.50| |S||5.50|| **==> picture [403 x 260] intentionally omitted <==** 10/12 **STW75NF30** **Revision history** ## **5 Revision history** **Table 8. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |23-Oct-2007|1|First release| |27-May-2008|2|New value inserted in_Table 5: Dynamic_| |15-Jul-2008|3|Document status promoted from preliminary data to datasheet| 11/12 **STW75NF30** ## **Please Read Carefully:** Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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