# Power MOSFET, N Channel, 600 V, 68 A, 0.04 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2629761/)

**URL**: https://novapart.co/products/STW70N60M2/power-mosfet-n-channel-600-v-68-a-004-ohm-to-247
**SKU**: STW70N60M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.7300
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:68A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh M2 Series |
| Qualification | - |
| Power Dissipation | 450W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 68A |
| Drain Source On State Resistance | 0.04ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2629761/)

## **STW70N60M2** 

N-channel 600 V, 0.03 Ω typ., 68 A MDmesh™ M2 Power MOSFET in a TO-247 package 

− **Datasheet production data** 

## **Features** 

**Order codes VDS @ TJmax RDS(on) max ID** STW70N60M2 650 V 0.040 Ω 68 A ~~—~~ 

**==> picture [55 x 36] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>1<br>TO-247<br>**----- End of picture text -----**<br>


- Extremely low gate charge 

- Excellent output capacitance (Coss) profile 

- 100% avalanche tested 

- Zener-protected 

## **Applications** 

## **Figure 1. Internal schematic diagram** 

**==> picture [83 x 148] intentionally omitted <==**

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D(2)<br>G(1)<br>S(3)<br>**----- End of picture text -----**<br>


- Switching applications 

## **Description** 

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. 

**==> picture [33 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM01476v1<br>**----- End of picture text -----**<br>


**Table 1. Device summary** 

|~~_——~~||||
|---|---|---|---|
|**Order codes**<br>~~_——~~|**Marking**|**Package**|**Packaging**|
|STW70N60M2<br>~~_——~~|70N60M2|TO-247|Tube|



September 2014 

_www.st.com_ 

DocID024327 Rev 4 1/13 

This is information on a product in full production. 

**Contents** 

**STW70N60M2** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|68|A|
|ID|Drain current (continuous) at TC= 100 °C|43|A|
|IDM<br>(1)|Drain current (pulsed)|272|A|
|PTOT|Total dissipation at TC= 25 °C|450|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|50|V/ns|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|||



1. Pulse width limited by safe operating area. 

2. ISD ≤ 68 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD= 400 V. 3. VDS ≤ 480 V 

**Table 3. Thermal data Symbol Parameter Value Unit** Rthj-case Thermal resistance junction-case max 0.28 °C/W ~~——s~~ Rthj-amb Thermal resistance junction-ambient max 50 °C/W **Table 4. Avalanche characteristics Symbol Parameter Value Unit** Avalanche current, repetitive or not IAR repetitive (pulse width limited by Tjmax ) 10 A Single pulse avalanche energy (starting ~~——e~~ EAS Tj=25°C, ID= 10 A; VDD=50) 1500 mJ 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

|**Table 5. On /off states**|
|---|
|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>V(BR)DSS<br>Drain-source<br>breakdown voltage<br>ID= 1 mA, VGS= 0<br>600<br>V<br>IDSS<br>Zero gate voltage<br>drain current (VGS= 0)<br>VDS= 600 V<br>1<br>µA<br>VDS= 600 V, TC=125 °C<br>100<br>µA<br>~~ee~~<br>~~ee~~<br>ee~~ee~~<br>~~a~~<br>~~ee~~<br>~~rr~~<br>~~a~~|
|IGSS<br>Gate-body leakage<br>current (VDS= 0)<br>VGS= ± 25 V<br>±10<br>µA<br>~~a~~|
|VGS(th)<br>Gate threshold voltage VDS= VGS, ID= 250 µA<br>2<br>3<br>4<br>V<br>RDS(on)<br>Static drain-source<br>on-resistance<br>VGS= 10 V, ID= 34 A<br>0.030<br>0.040<br>Ω<br>~~a~~<br>~~Sa~~|
|**Table 6. Dynamic**|
|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>Ciss<br>Input capacitance<br>VDS= 100 V, f = 1 MHz,<br>VGS= 0<br>-<br>5200<br>-<br>pF<br>Coss<br>Output capacitance<br>-<br>250<br>-<br>pF<br>Crss<br>Reverse transfer<br>capacitance<br>-<br>5<br>-<br>pF<br>Coss eq.<br>(1)<br>1.<br>Coss eq.is defined as a constant equivalent capacitance giving the same charging time as Cosswhen VDS<br>increases from 0 to 80% VDSS<br>Equivalent output<br>capacitance<br>VDS= 0 to 480 V, VGS= 0<br>-<br>395<br>-<br>pF<br>RG<br>Intrinsic gate<br>resistance<br>f = 1 MHz, ID= 0<br>-<br>3.3<br>-<br>Ω<br>Qg<br>Total gate charge<br>VDD= 480 V, ID= 68 A,<br>VGS= 10 V<br>(see_Figure 15_)<br>-<br>118<br>-<br>nC<br>Qgs<br>Gate-source charge<br>-<br>25<br>-<br>nC<br>Qgd<br>Gate-drain charge<br>-<br>47<br>-<br>nC<br>~~es~~<br>~~ee ee eee eee~~<br>~~—_————~~<br>~~=~~<br>~~—Pt~~<br>~~Pt ty~~<br>~~Ps~~<br>~~a———~~<br>~~—_~~<br>~~=~~<br>~~-—_~~<br>~~=~~|



**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 34 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 14_and<br>_Figure 19_)|-|32|-|ns|
|tr|Rise time||-|17|-|ns|
|td(off)|Turn-off-delay time||-|155|-|ns|
|tf|Fall time||-|9|-|ns|



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**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|ISD<br>~~a~~|Source-drain current||-||68|A|
|ISDM (1)<br>~~a~~<br>~~a~~|Source-drain current (pulsed)<br>~~Ge~~|~~Ge~~|-<br>~~Ge~~|~~Ge~~|272<br>~~Ge~~|A<br>~~Ge~~|
|VSD (2)<br>~~a~~<br>~~a~~<br>~~es~~|Forward on voltage<br>~~Ge~~<br>~~ee~~|ISD= 68 A, VGS= 0<br>~~Ge~~|-<br>~~Ge~~<br>~~|~~|0.98<br>~~Ge~~<br>~~|~~<br>~~|~~|1.6<br>~~Ge~~<br>~~|~~|V<br>~~Ge~~|
|trr<br>~~a~~<br>~~es~~<br>~~ee~~|Reverse recovery time<br>~~ee~~<br>~~ee~~|ISD= 68 A, di/dt = 100 A/µs<br>VDD= 60 V (see_Figure 18_)|-<br>~~|~~<br>~~|~~|520<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~|ns|
|Qrr<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~es~~|Reverse recovery charge<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~|12<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~<br>~~|~~<br>~~||~~|µC<br>~~|~~<br>~~|~~|
|IRRM<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|Reverse recovery current<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~|45<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~<br>~~||~~<br>~~|~~<br>~~||~~|A<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|trr<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~es~~|Reverse recovery time<br>~~ee~~<br>~~ee~~|ISD= 68 A, di/dt = 100 A/µs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 18_)|-<br>~~|~~<br>~~|~~|680<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~|~~|~~<br>~~||~~<br>~~|~~<br>~~||~~<br>~~**||**~~|ns<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~|
|Qrr<br>~~es~~<br>~~ee~~<br>~~es~~|Reverse recovery charge<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~|18<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~|~~|~~| |~~<br>~~|~~<br>~~||~~<br>~~|~~<br>~~**||**~~<br>~~|~~|µC<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~|~~|
|IRRM<br>~~ee~~<br>~~es~~|Reverse recovery current<br>~~ee~~||-<br>~~|~~|50<br>~~|~~<br>~~**|**~~<br>~~|~~|~~| |~~<br>~~**||**~~<br>~~|~~|A<br>~~|~~<br>~~**|**~~<br>~~|~~|



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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

## **Figure 3. Thermal impedance** 

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**----- Start of picture text -----**<br>
(A)ID AM17966v1 K o> sapeetee AM09125v1<br>Sr δ=0.5 amet<br>ase<br>T S KN,<br>100 — > 0.2<br>10µs a ffse oct a<br>s 0.1 ai Leathe at<br>ceSN, N 100µs -1 Yo 0.05<br>10 10<br>1ms 0.02 Ere<br>fi eeBees 0.01 ait Zth=k Rthj-c<br>10ms Goo d=tp/t<br>1 Single pulse I<br>Tj=150°C |<br>Tc=25°C tp<br>Single pulse t<br>-2<br>0.1 10 HH Bilin<br>0.1 1 10 100 VDS(V) 10-4 10-3 10-2 10-1 tp [(s)]<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figure 4. Output characteristics** 

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**----- Start of picture text -----**<br>
AM17967v1<br>ID(A)<br>VGS=7, 8, 9, 10V<br>150<br>6V<br>120<br>90<br>5V<br>60<br>30<br>4V<br>3V<br>0<br>0 4 8 12 16 VDS(V)<br>**----- End of picture text -----**<br>


## **Figure 5. Transfer characteristics** 

**==> picture [196 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM17968v1<br>ID<br>(A)<br>VDS=17V<br>150<br>120<br>90<br>60<br>30<br>0<br>0 2 4 6 8 VGS(V)<br>**----- End of picture text -----**<br>


## **Figure 6. Gate charge vs gate-source voltage** 

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**----- Start of picture text -----**<br>
VGS AM17969v1<br>VDS<br>(V)<br>V DD =480V (V)<br>10 VDS ID=68A 500<br>8 400<br>6 300<br>4 200<br>2 100<br>0 0<br>0 ee 20 40 60 80 100 120 Qg(nC)<br>**----- End of picture text -----**<br>


## **Figure 7. Static drain-source on-resistance** 

**==> picture [203 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM17970v1<br>RDS(on)<br>(Ω)<br>VGS=10V<br>0.0315<br>0.031<br>0.0305<br>0.03<br>0.0295<br>0.029<br>0 10 20 30 40 50 60 ID(A)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**==> picture [460 x 396] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. Capacitance variations Figure 9. Output capacitance stored energy<br>C AM17971v1 Eoss AM17972v1<br>(pF) (µJ)<br>10000<br>Ciss 30<br>1000<br>20<br>Coss<br>100<br>10<br>10<br>Crss<br>1 0<br>Ee 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 VDS(V)<br>Figure 10. Normalized gate threshold voltage vs  Figure 11. Normalized on-resistance vs<br>temperature temperature<br>VGS(th) AM17973v1 RDS(on) AM17974v1<br>(norm) (norm)<br>ID=250µA ID=34A<br>1.1 2.2<br>1 1.8<br>0.9 1.4<br>0.8 1<br>0.7 0.6<br>0.6 0.2<br>-50 0 50 100 TJ(°C) -50 0 50 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 12. Normalized VDS vs temperature** 

**Figure 13. Source-drain diode forward characteristics** 

**==> picture [427 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
(norm)VDS AM15975v1 VSD (V) AM17976v1<br>ID=1mA TJ=-50°C<br>1.09 1<br>1.05 0.9 TJ=25 ° C<br>1.01 0.8<br>0.97 0.7 T J =150°C<br>0.93 0.6<br>0.89 0.5<br>-50 0 50 100 TJ(°C) 0 10 20 30 40 50 60 ISD(A)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 14. Switching times test circuit for resistive load** 

**Figure 15. Gate charge test circuit** 

**==> picture [452 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>JL RG D.U.T. 2200μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [443 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


**Figure 18. Unclamped inductive waveform** 

## **Figure 19. Switching time waveform** 

**==> picture [210 x 153] intentionally omitted <==**

**----- Start of picture text -----**<br>
ton toff<br>tdon tr tdoff tf<br>90% 90%<br>10%<br>0 10% VDS<br>90%<br>VGS<br>0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK is an ST trademark. 

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**Package mechanical data** 

## **Figure 20. TO-247 drawing** 

**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 9. TO-247 mechanical data** 

||**Table 9. TO-247 mechanical data**|**Table 9. TO-247 mechanical data**|**Table 9. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~ee~~|||
||**Min.**<br>~~a~~|**Typ.**<br>~~a~~<br>~~ee~~|**Max.**<br>~~a~~|
|A<br>~~a~~|4.85|~~ee~~|5.15|
|A1<br>~~a~~|2.20||2.60|
|b<br>~~a~~|1.0||1.40|
|b1<br>~~a~~|2.0||2.40|
|b2<br>~~a~~|3.0||3.40|
|c<br>~~a~~<br>~~es~~|0.40||0.80|
|D<br>~~es~~|19.85||20.15|
|E<br>~~es~~<br>~~a~~|15.45||15.75|
|e<br>~~a~~|5.30|5.45|5.60|
|L<br>~~a~~|14.20||14.80|
|L1<br>~~a~~|3.70||4.30|
|L2<br>~~a~~<br>~~es~~||18.50||
|∅P<br>~~es~~|3.55||3.65|
|∅R<br>~~es~~<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



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**STW70N60M2** 

**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|28-Feb-2013|1|First release.|
|13-Mar-2013|2|– Minor text changes<br>– Modified: test condition in_Table 7_|
|12-Dec-2013|3|– Modified: title<br>– Modified:_Table 4_, RDS(on)typical value in_Table 5_, the entire typical<br>values in_Table 6_,_7_and_8_<br>– Updated:_Section 3: Test circuits_<br>– Added:_Section 2.1: Electrical characteristics (curves)_<br>– Minor text changes|
|01-Sep-2014|4|– Updated values in_Table 4_<br>– Updated description and features in cover page<br>– Minor text changes|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

DocID024327 Rev 4 

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## Links

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stw70n60m2/mosfet-n-ch-600v-68a-to-247-3/dp/2629761)
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