# Power MOSFET, N Channel, 950 V, 9 A, 1 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3132770/)

**URL**: https://novapart.co/products/STW6N95K5/power-mosfet-n-channel-950-v-9-a-1-ohm-to-247
**SKU**: STW6N95K5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9920
**Stock**: 200+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:950V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh K5 |
| Qualification | - |
| Power Dissipation | 90W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 950V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9A |
| Drain Source On State Resistance | 1ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3132770/)

**STD6N95K5,  STP6N95K5 STU6N95K5,  STW6N95K5** Datasheet 

N-channel 950 V, 1 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220, IPAK and TO-247 packages 

**==> picture [146 x 238] intentionally omitted <==**

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TAB TAB<br>3<br>&<br>DPAK 1<br>TO-220<br>1 [2 3]<br>TAB<br>3<br>IPAK 1 2 3<br>~ @ 2<br>TO-247 1<br>D(2, TAB)<br>G(1)<br>S(3) AM01475V1<br>**----- End of picture text -----**<br>


## **Product status link** ~~ld~~ 

## **Features** 

|**Order codes**<br>~~ee~~|**VDS**<br>~~e~~|**RDS(on) max.**<br>~~ee~~|**ID**<br>~~en~~|**PTOT**|
|---|---|---|---|---|
|STD6N95K5<br>~~ee~~|950 V<br>~~e~~|1.25 Ω<br>~~ee~~|9 A<br>~~en~~|90 W|
|STP6N95K5|||||
|STU6N95K5|||||
|STW6N95K5|||||



- DPAK 950 V worldwide best R DS(on) 

- Worldwide best FOM (figure of merit) 

- Ultra low gate charge 

- 100% avalanche tested 

- Zener-protected 

## **Applications** 

- Switching applications 

## **Description** 

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 

STD6N95K5 STP6N95K5 STU6N95K5 STW6N95K5 

**DS6666** - **Rev 5** - **March 2018** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5** 

**Electrical ratings** 

**1** 

## **Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate- source voltage|± 30|V|
|ID|Drain current (continuous) at TC= 25 °C|9|A|
|ID|Drain current (continuous) at TC= 100 °C|6|A|
|IDM(1)|Drain current (pulsed)|24|A|
|PTOT|Total dissipation at TC= 25 °C|90|W|
|IAR(2)|Max current during repetitive or single pulse avalanche|3|A|
|EAS|Single pulse avalanche energy<br>(starting TJ= 25 °C, ID=IAS, VDD= 50 V)|90|mJ|
|dv/dt(3)|Peak diode recovery voltage slope|4.5|V/ns|
|dv/dt(4)|MOSFET dv/dt ruggedness|50|V/ns|
|Tj|Operating junction temperature range|- 55 to 150|°C|
|Tstg|Storage temperature range|||



_1. Pulse width limited by safe operating area._ 

_2. Pulse width limited by TJmax._ 

_3. ISD ≤ 9 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS_ 

_4. VDS ≤ 760 V_ 

## **Table 2. Thermal data** 

|||**Value**|**Value**|**Value**||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**TO-220,**<br>**IPAK**|**DPAK**|**TO-247**|**Unit**|
|Rthj-case|Thermal resistance junction-case|1.39|||°C/W|
|Rthj-amb|Thermal resistance junction-amb|62.5||50|°C/W|
|Rthj-pcb (1)|Thermal resistance junction-pcb||50||°C/W|



_1. When mounted on 1 inch² FR-4 board, 2 oz Cu_ 

**DS6666** - **Rev 5** 

**page 2/26** 

**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 3. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 1 mA|950|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 950 V|||1|µA|
|||VGS= 0 V, VDS= 950 V, Tc=125 °C(1)|||50|µA|
|IGSS|Gate body leakage current|VDS= 0, VGS= ± 20 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100 µA|3|4|5|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 3 A||1|1.25|Ω|



_1. Defined by design, not subject to production test._ 

**Table 4. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VGS=0 V, VDS=100 V, f=1 MHz|-|450|-|pF|
|Coss|Output capacitance||-|30|-|pF|
|Crss|Reverse transfer capacitance||-|1.6|-|pF|
|Co(tr) (1)|Equivalent capacitance time<br>related|VGS= 0 V, VDS= 0 to 760 V|-|45|-|pF|
|Co(er) (2)|Equivalent capacitance<br>energy related||-|19|-|pF|
|RG|Intrinsic gate resistance|f = 1 MHz, ID=0 A|-|7|-|Ω|
|Qg|Total gate charge|VDD= 760 V, ID= 6 A,<br>VGS= 0 to 10 V, (seeFigure 17. Test<br>circuit for gate charge behavior)|-|13|-|nC|
|Qgs|Gate-source charge||-|3|-|nC|
|Qgd|Gate-drain charge||-|7|-|nC|



_1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS._ 

_2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS._ 

**Table 5. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 475 V, ID= 3 A, RG=4.7 Ω,<br>VGS=10 V<br>(seeFigure 16. Test circuit for<br>resistive load switching timesand<br>Figure 21. Switching time waveform)|-|12|-|ns|
|tr|Rise time||-|12|-|ns|
|td(off)|Turn-off delay time||-|33|-|ns|
|tf|Fall time||-|21|-|ns|



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**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Electrical characteristics** 

## **Table 6. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||9|A|
|ISDM(1)|Source-drain current (pulsed)||-||24|A|
|VSD (2)|Forward on voltage|ISD= 6 A, VGS=0 V|-||1.6|V|
|trr|Reverse recovery time|ISD= 6 A, VDD= 60 V<br>di/dt = 100 A/µs,<br>(seeFigure 18. Test circuit for<br>inductive load switching and diode<br>recovery times)|-|372||ns|
|Qrr|Reverse recovery charge||-|4||µC|
|IRRM|Reverse recovery current||-|22||A|
|trr|Reverse recovery time|ISD= 6 A,VDD= 60 V<br>di/dt=100 A/µs, Tj=150 °C<br>(seeFigure 18. Test circuit for<br>inductive load switching and diode<br>recovery times)|-|522||ns|
|Qrr|Reverse recovery charge||-|5||µC|
|IRRM|Reverse recovery current||-|20||A|



_1. Pulse width limited by safe operating area._ 

_2. Pulsed: pulse duration = 300µs, duty cycle 1.5%_ 

## **Table 7. Gate-source Zener diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown<br>voltage|IGS= ± 1mA, ID= 0 A|±30|-|-|V|



The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. 

**DS6666** - **Rev 5** 

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**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

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**----- Start of picture text -----**<br>
Figure 1. Safe operating area for DPAK and IPAK Figure 2. Thermal impedance for DPAK and IPAK<br>AM07105v1<br>ID K GC20460<br>(A) Tj=150°C<br>Tc=25°C<br>Single pulse<br>10  10µs<br>10 [0]<br>100µs<br>1<br>1ms<br>10ms<br>10 [-1]<br>0.1<br>0.01 10 [-2]<br>0.1  1  10  100  VDS(V)  10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp (s)<br>Figure 3. Safe operating area for TO-220 and TO-247 Figure 4. Thermal impedance for TO-220 and TO-247<br>ID AM07107v1<br>(A) Tj=150°C<br>Tc=25°C<br>Single pulse<br>10<br>10µs<br>100µs<br>1<br>1ms<br>10ms<br>0.1<br>0.01<br>0.1  1  10  100  VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


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Figure 5. Output characteristics Figure 6. Transfer characteristics<br>ID(A)  AM07108v1 ID AM07109v1<br>VGS=10V  (A)  VDS=15V<br>12<br>8<br>10<br>6<br>8<br>7V<br>6<br>4<br>4<br>6V  2<br>2<br>5V<br>0  0<br>0  5  10  15  20  25  VDS(V)  0  2  4  6  8  VGS(V)<br>**----- End of picture text -----**<br>


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**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Electrical characteristics (curves)** 

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Figure 7. Gate charge vs gate-source voltage<br>VGS AM07110v1VDS<br>(V)<br>(V)<br>VDS  VDD=760V  700<br>12<br>ID=6A<br>600<br>10<br>500<br>8<br>400<br>6<br>300<br>4<br>200<br>2  100<br>0  0<br>0  2  4  6  8  10  12 14  Qg(nC)<br>**----- End of picture text -----**<br>


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Figure 8. Static drain-source on-resistance<br>AM07111v1<br>RDS(on)<br>(Ohm)<br>1.03 VGS=10V<br>1.01<br>0.99<br>0.97<br>0.95<br>0.93<br>0.91<br>0.89<br>0.87<br>0.5  1.0  1.5  2.0  2.5  3.0  ID(A)<br>**----- End of picture text -----**<br>


**Figure 9. Capacitance variations** 

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C  AM07112v1<br>(pF)<br>1000<br>Ciss<br>100<br>f = 1 MHz Coss<br>10<br>Crss<br>1<br>0.1  1  10  100  VDS(V)<br>**----- End of picture text -----**<br>


**Figure 10. Output capacitance storage energy** 

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AM07113v1<br>Eoss (µJ)<br>22<br>20<br>1 8<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0  100  200 300  400  500  600  700  800  900 VDS(V)<br>**----- End of picture text -----**<br>


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Figure 11. Normalized gate threshold voltage vs Figure 12. Normalized on-resistance vs temperature<br>temperature RDS(on) AM07115v1<br>VGS(th)(norm) AM07114v1 (norm)  VGS=10V<br>1.2 ID=100 µA 2.5 ID=3A<br>1.1<br>2.0<br>1.0<br>1.5<br>0.9<br>0.8<br>1.0<br>0.7<br>0.6  0.5<br>0.5<br>0<br>0.4  -75  -25  25  75  125  TJ(°C)<br>-75  -25  25  75  125  TJ(°C)<br>**----- End of picture text -----**<br>


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**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5** 

**Electrical characteristics (curves)** 

**==> picture [513 x 201] intentionally omitted <==**

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Figure 13. Source-drain diode forward characteristics Figure 14. Normalized V(BR)DSS vs temperature<br>VSD AM07118v1 V(BR)DSS AM07116v1<br>(V)  (norm)  ID=1 mA<br>TJ=-50°C 1.2<br>0.95<br>1.1<br>0.85<br>TJ=25°C<br>1.0<br>0.75<br>0.9<br>TJ=150 ° C<br>0.65  0.8<br>0.7<br>0.55<br>2.0  3.0  4.0  5.0  6.0  ISD(A)  -75  -25  25  75  125  TJ(°C)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 15.  Maximum avalanche energy vs starting Tj<br>AM07117v1<br>EAS (mJ)<br>100 I D =3 A<br>90  VDD=50 V<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0  20  40  60  80  100  120 140 TJ(°C)<br>**----- End of picture text -----**<br>


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**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5** 

**Test circuits** 

**3 Test circuits** 

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**----- Start of picture text -----**<br>
Figure 16. Test circuit for resistive load switching times Figure 17. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 18. Test circuit for inductive load switching and Figure 19. Unclamped inductive load test circuit<br>diode recovery times<br>L<br>D A A A VD<br>G D.U.T. fastdiode 100 µH + 2200µF 3.3µF VDD<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


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Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform<br>V(BR)DSS<br>VD ton toff<br>td(on) tr td(off) tf<br>IDM 90% 90%<br>10%<br>ID 0 10% VDS<br>VDD VDD<br>VGS 90%<br>0 10%<br>AM01472v1<br>AM01473v1<br>**----- End of picture text -----**<br>


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**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. 

**DS6666** - **Rev 5** 

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**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 DPAK (TO-252) type A2 package information** 

**4.1 DPAK (TO-252) type A2 package information** 

**Figure 22. DPAK (TO-252) type A2 package outline** 

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0068772_type-A2_rev24<br>**----- End of picture text -----**<br>


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**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 DPAK (TO-252) type A2 package information** 

**Table 8. DPAK (TO-252) type A2 mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|A2|0.03||0.23|
|b|0.64||0.90|
|b4|5.20||5.40|
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|D1|4.95|5.10|5.25|
|E|6.40||6.60|
|E1|5.10|5.20|5.30|
|e|2.16|2.28|2.40|
|e1|4.40||4.60|
|H|9.35||10.10|
|L|1.00||1.50|
|L1|2.60|2.80|3.00|
|L2|0.65|0.80|0.95|
|L4|0.60||1.00|
|R||0.20||
|V2|0°||8°|



**DS6666** - **Rev 5** 

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**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 DPAK (TO-252) type C2 package information** 

**4.2 DPAK (TO-252) type C2 package information** 

**Figure 23. DPAK (TO-252) type C2 package outline** 

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0068772_C2_24<br>**----- End of picture text -----**<br>


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**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 DPAK (TO-252) type C2 package information** 

**Table 9. DPAK (TO-252) type C2 mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20|2.30|2.38|
|A1|0.90|1.01|1.10|
|A2|0.00||0.10|
|b|0.72||0.85|
|b4|5.13|5.33|5.46|
|c|0.47||0.60|
|c2|0.47||0.60|
|D|6.00|6.10|6.20|
|D1|5.10||5.60|
|E|6.50|6.60|6.70|
|E1|5.20||5.50|
|e|2.186|2.286|2.386|
|H|9.80|10.10|10.40|
|L|1.40|1.50|1.70|
|L1|2.90 REF|||
|L2|0.90||1.25|
|L3|0.51 BSC|||
|L4|0.60|0.80|1.00|
|L6|1.80 BSC|||
|θ1|5°|7°|9°|
|θ2|5°|7°|9°|
|V2|0°||8°|



**DS6666** - **Rev 5** 

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**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 DPAK (TO-252) type C2 package information** 

**Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm)** 

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FP_0068772_24 

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**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5** 

**DPAK (TO-252) packing information** 

## **4.3** 

## **DPAK (TO-252) packing information** 

## **Figure 25. DPAK (TO-252) tape outline** 

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**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>|) paces do c s<br>K0 W<br>B1 B0<br>A HEEIRIGIafafalaBItetEH<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0<br>User direction of feed<br>——_———— Bending radius<br>User direction of feed<br>**----- End of picture text -----**<br>


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R<br>Bending radius<br>AM08852v1<br>**----- End of picture text -----**<br>


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**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 DPAK (TO-252) packing information** 

**Figure 26. DPAK (TO-252) reel outline** 

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**----- Start of picture text -----**<br>
T<br>40mm min.<br>access hole<br>at slot location<br>B<br>D<br>C<br>N<br>A<br>Tape slot  G measured<br>in core for  at hub<br>Full radius  tape start<br>2.5mm min.width<br>**----- End of picture text -----**<br>


AM06038v1 

**Table 10. DPAK (TO-252) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|6.8|7|A||330|
|B0|10.4|10.6|B|1.5||
|B1||12.1|C|12.8|13.2|
|D|1.5|1.6|D|20.2||
|D1|1.5||G|16.4|18.4|
|E|1.65|1.85|N|50||
|F|7.4|7.6|T||22.4|
|K0|2.55|2.75||||
|P0|3.9|4.1|Base qty.||2500|
|P1|7.9|8.1|Bulk qty.||2500|
|P2|1.9|2.1||||
|R|40|||||
|T|0.25|0.35||||
|W|15.7|16.3||||



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**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 TO-220 type A package information** 

## **4.4 TO-220 type A package information** 

**Figure 27. TO-220 type A package outline** 

**==> picture [305 x 435] intentionally omitted <==**

0015988_typeA_Rev_21 

**DS6666** - **Rev 5** 

**page 17/26** 

**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 TO-220 type A package information** 

## **Table 11. TO-220 type A package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



**DS6666** - **Rev 5** 

**page 18/26** 

**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 IPAK (TO-251) type A package information** 

**4.5 IPAK (TO-251) type A package information** 

**Figure 28. IPAK (TO-251) type A package outline** 

**==> picture [70 x 31] intentionally omitted <==**

**==> picture [70 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068771_IK_typeA_rev14<br>**----- End of picture text -----**<br>


**DS6666** - **Rev 5** 

**page 19/26** 

**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 IPAK (TO-251) type A package information** 

## **Table 12. IPAK (TO-251) type A package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|2.20||2.40|
|A1|0.90||1.10|
|b|0.64||0.90|
|b2|||0.95|
|b4|5.20||5.40|
|B5||0.30||
|c|0.45||0.60|
|c2|0.48||0.60|
|D|6.00||6.20|
|E|6.40||6.60|
|e||2.28||
|e1|4.40||4.60|
|H||16.10||
|L|9.00||9.40|
|L1|0.80||1.20|
|L2||0.80|1.00|
|V1||10°||



**DS6666** - **Rev 5** 

**page 20/26** 

**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 TO-247 package information** 

**4.6 TO-247 package information** 

**Figure 29. TO-247 package outline** 

**==> picture [34 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_9<br>**----- End of picture text -----**<br>


**DS6666** - **Rev 5** 

**page 21/26** 

**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 TO-247 package information** 

## **Table 13. TO-247 package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|ØP|3.55||3.65|
|ØR|4.50||5.50|
|S|5.30|5.50|5.70|



**DS6666** - **Rev 5** 

**page 22/26** 

**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5 Ordering information** 

## **5** 

## **Ordering information** 

**Table 14. Ordering information** 

|**Order code**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STD6N95K5|6N95K5|DPAK|Tape and reel|
|STP6N95K5|6N95K5|TO-220|Tube|
|STU6N95K5|6N95K5|IPAK|Tube|
|STW6N95K5|6N95K5|TO-247|Tube|



**DS6666** - **Rev 5** 

**page 23/26** 

**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5** 

## **Revision history** 

## **Table 15. Document revision history** 

|**Date**|**Revision **|**Changes**|
|---|---|---|
|12-Jan-2010|1|First release.|
|01-Jul-2010|2|Document status promoted from preliminary data to datasheet.|
|31-Aug-2012|3|Inserted new device in IPAK.<br>Updated_Table 1: Device summary_,_Table 2: Absolute maximum ratings_, and_Table 3: Thermal data._<br>Updated_Section 4: Package mechanical data_and_Section 5: Packaging mechanical data_.<br>Minor text changes in the cover page.|
|16-May-2014|4|The part number STF6N95K5 has been moved to a separate datasheet.<br>Added: MOSFET dv/dt ruggedness parameter in_Table 2_<br>Updated:_Section 4: Package mechanical data_<br>Minor text changes|
|22-Mar-2018|5|Removed maturity status indication and updated title and description from cover page.<br>The document status is production data.<br>UpdatedSection 1 Electrical ratings,Section 2 Electrical characteristics.<br>UpdatedFigure 9. Capacitance variationsandFigure 12. Normalized on-resistance vs temperature.<br>UpdatedSection 4 Package information.<br>Minor text changes.|



**DS6666** - **Rev 5** 

**page 24/26** 

**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5** 

**Contents** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**|
||**4.1**<br>DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10|
||**4.2**<br>DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12|
||**4.3**<br>DPAK (TO-252) packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15|
||**4.4**<br>TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17|
||**4.5**<br>IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19|
||**4.6**<br>TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21|
|**5**|**Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23**|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24**||



**DS6666** - **Rev 5** 

**page 25/26** 

**STD6N95K5, STP6N95K5, STU6N95K5, STW6N95K5** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2018 STMicroelectronics – All rights reserved 

**DS6666** - **Rev 5** 

**page 26/26** 



## Links

- [View this product on Novapart](https://novapart.co/products/STW6N95K5/power-mosfet-n-channel-950-v-9-a-1-ohm-to-247)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stw6n95k5/mosfet-n-ch-950v-9a-150deg-c-90w/dp/3132770)
---

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