# Power MOSFET, N Channel, 650 V, 46 A, 0.041 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2807330/)

**URL**: https://novapart.co/products/STW62N65M5/power-mosfet-n-channel-650-v-46-a-0041-ohm-to-247
**SKU**: STW62N65M5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €6.3200
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.041ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh M5 |
| Qualification | - |
| Power Dissipation | 330W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 650V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 46A |
| Drain Source On State Resistance | 0.041ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807330/)

## **STW62N65M5** 

Automotive-grade N-channel 650 V, 0.041 Ω typ., 46 A MDmesh™ M5 Power MOSFET in a TO-247 package 

**Datasheet** - **production data** 

## **Features** 

|**Order code**|**VDS@ TJmax**|**RDS(on) max**|**ID**|
|---|---|---|---|
|STW62N65M5|710 V|0.049Ω|46 A|



- Designed for automotive applications and AEC-Q101 qualified 

**==> picture [57 x 41] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>1<br>TO-247<br>**----- End of picture text -----**<br>


- Extremely low RDS(on) 

- Low gate charge and input capacitance 

- Excellent switching performance 

- 100% avalanche tested 

## **Applications** 

## **Figure 1. Internal schematic diagram** 

- Switching applications 

## **Description** 

This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STW62N65M5|62N65M5|TO-247|Tube|



_www.st.com_ 

July 2014 

DocID024837 Rev 3 

1/14 

This is information on a product in full production. 

**Contents** 

**STW62N65M5** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13**|



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**STW62N65M5** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|46|A|
|ID|Drain current (continuous) at TC= 100 °C|26|A|
|IDM<br>(1)|Drain current (pulsed)|184|A|
|PTOT|Total dissipation at TC= 25 °C|330|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|50|V/ns|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|150|°C|



1. Pulse width limited by safe operating area 

2. ISD ≤ 46 A, di/dt ≤ 200 A/µs; VDS peak < V(BR)DSS, VDD=400 V 

3. VDS ≤ 520 V 

**Table 3. Thermal data** 

||**Table 3. Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-case|Thermal resistance junction-case max|0.38|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|50|°C/W|



**Table 4. Avalanche characteristics** 

||**Table 4. Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|IAR|Avalanche current, repetitive or not repetitive<br>(pulse width limited by Tjmax)|12|A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 50 V)|1400|mJ|



DocID024837 Rev 3 

3/14 

**STW62N65M5** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5. On /off states** 

|||**Table 5. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|VGS= 0, ID= 1 mA|650|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0, VDS= 650 V|||1|µA|
|||VGS= 0, VDS= 650 V,<br>TC=125 °C|||100|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0, VGS= ± 25 V|||± 100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 23 A||0.041|0.049|Ω|



**Table 6. Dynamic** 

|||**Table 6. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VGS= 0, VDS= 100 V,<br>f = 1 MHz,|-|6420|-|pF|
|Coss|Output capacitance||-|170|-|pF|
|Crss|Reverse transfer<br>capacitance||-|11|-|pF|
|Co(tr)<br>(1)|Equivalent<br>capacitance time<br>related|VGS= 0, VDS= 0 to 520 V|-|536|-|pF|
|Co(er)<br>(2)|Equivalent<br>capacitance energy<br>related||-|146|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz, ID= 0|-|1.2|-|Ω|
|Qg|Total gate charge|VDD= 520 V, ID= 23 A,<br>VGS= 10 V<br>(see_Figure 16_)|-|142|-|nC|
|Qgs|Gate-source charge||-|34|-|nC|
|Qgd|Gate-drain charge||-|58|-|nC|



1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 

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**STW62N65M5** 

**Electrical characteristics** 

**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|td(V)|Voltage delay time|VDD= 400 V, ID= 30 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 17_and<br>_Figure 20_)|-|101|-|ns|
|tr(V)|Voltage rise time||-|11|-|ns|
|tc(off)|Crossing time||-|14|-|ns|
|tf(i)|Current fall time||-|8|-|ns|



**Table 8. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||46|A|
|ISDM (1)|Source-drain current (pulsed)||||184|A|
|VSD (2)|Forward on voltage|VGS= 0, ISD= 46 A|-||1.5|V|
|trr|Reverse recovery time|ISD= 46 A, di/dt = 100 A/µs<br>VDD= 100 V (see_Figure 17_)|-|448||ns|
|Qrr|Reverse recovery charge||-|10||µC|
|IRRM|Reverse recovery current||-|43||A|
|trr|Reverse recovery time|ISD= 46 A, di/dt = 100 A/µs<br>VDD= 100 V, Tj= 150 °C<br>(see_Figure 17_)|-|548||ns|
|Qrr|Reverse recovery charge||-|14||µC|
|IRRM|Reverse recovery current||-|51||A|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

DocID024837 Rev 3 

5/14 

**STW62N65M5** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

## **Figure 3. Thermal impedance** 

**Figure 4. Output characteristics** 

**Figure 5. Transfer characteristics** 

**Figure 6. Gate charge vs gate-source voltage** 

**Figure 7. Static drain-source on-resistance** 

**==> picture [202 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15919v1<br>RDS(on)<br>(Ω)<br>VGS=10 V<br>0.044<br>0.043<br>0.042<br>0.041<br>0.040<br>0.039<br>0.038<br>0 10 20 30 40 ID(A)<br>**----- End of picture text -----**<br>


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**STW62N65M5** 

**Electrical characteristics** 

**Figure 8. Capacitance variations** 

**Figure 9. Output capacitance stored energy** 

**Figure 10. Normalized gate threshold voltage vs** 

**temperature** 

**==> picture [204 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM05459v2<br>(norm)<br>1.10 P|| | ID=250 µA<br>VDS=VGS<br>PS|<br>1.00 aNP| | NET TT<br>0.90 P| | | IN TT<br>SeeeeNee<br>0.80 P| tT | | | AT<br>P| Pt ET [TN]<br>0.70 Pit<br>| ET IN<br>-50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 11. Normalized on-resistance vs temperature** 

**==> picture [201 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
RDS(on) AM15497v1<br>(norm)<br>VGS=10 V<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>-55 -25 5 35 65 95 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 12. Source-drain diode forward characteristics** 

**Figure 13. Normalized V(BR)DSS vs temperature** 

**==> picture [423 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD AM05461v1 V(BR)DSS AM10399v1<br>(V) TJ=-50°C (norm)<br>1.08<br>| | | | | | | A<br>1.2 ID = 1mA<br>1.06 P |<br>1.0<br>1.04<br>P| | | dT yy<br>0.8 1.02<br>pt} i | yy |<br>TJ=25°C<br>0.6 1.00 || | Yi | |<br>TJ=150°C 0.98 P| ye | tt<br>0.4<br>0.96 PIA<br>0.2<br>0.94 fA tT | tt<br>0 0.92<br>0 10 20 30 40 50 ISD(A) -50 yi -25 lt| 0 | 25 | 50 || 75 tt 100 TJ(°C)<br>**----- End of picture text -----**<br>


DocID024837 Rev 3 

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**STW62N65M5** 

**Electrical characteristics** 

**Figure 14. Switching losses vs gate resistance[(1)]** 

**==> picture [228 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
E AM12258v1<br>(µJ) Eon<br>ID=38A<br>1000 V DD =400V<br>VGS=10V<br>800<br>600<br>Eoff<br>400<br>200<br>0<br>0 10 20 30 40 RG(Ω)<br>**----- End of picture text -----**<br>


1. Eon including reverse recovery of a SiC diode 

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**STW62N65M5** 

**Test circuits** 

## **3 Test circuits** 

**Figure 15. Switching times test circuit for resistive load** 

**Figure 16. Gate charge test circuit** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


## **Figure 19. Unclamped inductive waveform** 

## **Figure 20. Switching time waveform** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
�������� Id Inductive Load Turn - off<br>��<br>90%Vds 90%Id<br>td(v)<br>���<br>Vgs<br>90%Vgs on<br>��<br>Vgs(I(t ))<br>��� ��� 10%Vds 10%Id<br>Vds<br>tr(v) tf(i)<br>��������� tc(off) AM05540v1<br>**----- End of picture text -----**<br>


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**STW62N65M5** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**STW62N65M5** 

**Package mechanical data** 

## **Figure 21. TO-247 drawing** 

**==> picture [401 x 394] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


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**STW62N65M5** 

**Package mechanical data** 

**Table 9. TO-247 mechanical data** 

||**Table 9. TO-247 mechanical data**|**Table 9. TO-247 mechanical data**|**Table 9. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**|**mm.**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S|5.30|5.50|5.70|



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**STW62N65M5** 

**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|19-Jun-2013|1|First release.|
|23-May-2014|2|– Modified:_Features_in cover page<br>– Minor text changes|
|25-Jul-2014|3|– Modified:note _2_in_Table 2_<br>– Modified: symbol, parameters, tc(off)and tf(i)in_Table 7_<br>– Minor text changes|



DocID024837 Rev 3 

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**STW62N65M5** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

14/14 DocID024837 Rev 3 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/stw62n65m5/mosfet-n-ch-auto-650v-46a-to-247/dp/2807330)
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