# Power MOSFET, N Channel, 500 V, 68 A, 0.035 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2807232/)

**URL**: https://novapart.co/products/STW60NM50N/power-mosfet-n-channel-500-v-68-a-0035-ohm-to-247
**SKU**: STW60NM50N
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €11.9800
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh II |
| Power Dissipation | 446W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 446W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.035ohm |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 68A |
| Drain Source On State Resistance | 0.035ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807232/)

## **STW60NM50N** 

## N-channel 500 V, 0.035 Ω , 68 A, MDmesh™ II Power MOSFET in a TO-247 package 

**Datasheet** - **production data** 

## **Features** 

**Order code VDSS (@Tjmax) RDS(on) max ID** STW60NM50N 550 V <0.043 Ω 68 A ~~———E~~ • 100% avalanche tested 

- Low input capacitance and gate charge 

**==> picture [58 x 34] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>1<br>TO-247<br>**----- End of picture text -----**<br>


- Low gate input resistance 

## **Applications** 

- Switching applications 

## **Figure 1.  Internal schematic diagram** 

## **Description** 

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Packages**|**Packaging**|
|---|---|---|---|
|STW60NM50N|60NM50N|TO-247|Tube|



_www.st.com_ 

April 2013 

DocID023157 Rev 2 

1/13 

This is information on a product in full production. 

**Contents** 

**STW60NM50N** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate- source voltage|±25|V|
|ID|Drain current (continuous) at TC= 25 °C|68|A|
|ID|Drain current (continuous) at TC= 100 °C|43|A|
|IDM (1)|Drain current (pulsed)|272|A|
|PTOT|Total dissipation at TC= 25 °C|446|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|Tstg|Storage temperature|–55 to 150|°C|
|Tj|Max. operating junction temperature|150|°C|



1. Pulse width limited by safe operating area. 2. ISD ≤ 68 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS 

**Table 3. Thermal data Symbol Parameter Value Unit** Rthj-case Thermal resistance junction-case max 0.28 °C/W ~~—————~~ Rthj-amb Thermal resistance junction-ambient max 50 °C/W **Table 4. Avalanche characteristics Symbol Parameter Value Unit** Avalanche current, repetitive or not-repetitive IAS (pulse width limited by Tj Max) 11 A Single pulse avalanche energy EAS (starting Tj=25 °C, ID=IAS, VDD=50 V) 551 mJ ~~—~~ 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25 °C unless otherwise specified) 

**Table 5. On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source<br>breakdown voltage|VGS= 0, ID= 1 mA|500|||V|
|IDSS|Zero gate voltage<br>drain current|VGS= 0, VDS= 500 V<br>VGS= 0, VDS= 500 V, Tj= 125 °C|||1<br>100|µA|
|IGSS|Gate-body leakage<br>current|VDS= 0, VGS= ± 20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 34 A||0.035|0.043|Ω|



|**Symbol**<br>~~a~~<br>~~ee~~|**Parameter**<br>~~eee~~<br>~~eee~~|**Test conditions**<br>~~ee~~<br>~~eee~~<br>~~|~~|**Min.**<br>~~e~~<br>~~eee~~<br>~~|~~|**Typ.**<br>~~e~~<br>~~eee~~<br>~~ft~~|**Max.**<br>~~e~~<br>~~eee~~<br>~~ft~~|**Unit**<br>~~e~~<br>~~eee~~<br>~~ft~~|
|---|---|---|---|---|---|---|
|Ciss<br>~~a ~~<br>~~ee~~<br>~~oo~~|Input capacitance<br> ~~eee~~<br>~~eee~~<br>~~oo~~|VDS= 100 V, f = 1 MHz,<br>VGS= 0<br>~~ee~~<br>~~eee~~<br>~~|~~<br>~~oo~~<br>~~one~~|-<br>~~e~~<br>~~eee~~<br>~~|~~<br>~~one~~|5790<br>~~e~~<br>~~eee~~<br>~~ft~~<br>~~one~~|-<br>~~e~~<br>~~eee~~<br>~~ft~~<br>~~one~~|pF<br>~~e~~<br>~~eee~~<br>~~ft~~<br>~~one~~|
|Coss<br>~~ee~~<br>~~oo~~|Output capacitance<br>~~eee~~<br>~~oo~~||-<br>~~eee~~<br>~~|~~<br>~~one~~|365<br>~~eee~~<br>~~ft~~<br>~~one~~|-<br>~~eee~~<br>~~ft~~<br>~~one~~|pF<br>~~eee~~<br>~~ft~~<br>~~one~~|
|Crss<br>~~oo~~|Reverse transfer<br>capacitance<br>~~oo~~||-<br>~~one~~|14<br>~~one~~|-<br>~~one~~|pF<br>~~one~~|
|Coss eq.<br>(1)<br>~~oo~~<br>~~ee~~|Equivalent output<br>capacitance<br>~~oo~~<br>~~eee~~|VGS= 0 V, VDS= 0V to 480 V<br>~~oo~~<br>~~one~~<br>~~Ff~~|-<br>~~one~~<br>~~Ff~~|1008<br>~~one~~<br>~~Ffff~~|-<br>~~one~~<br>~~ff~~|pF<br>~~one~~<br>~~ff~~|
|Qg<br>~~ee~~<br>~~ee~~|Total gate charge<br>~~eee~~<br>~~eee~~|VDD= 480 V, ID= 68 A,<br>VGS= 10 V<br>_(see Figure 14)_<br>~~Ff~~<br>~~|~~|-<br>~~Ff~~<br>~~|~~|178<br>~~Ffff~~<br>~~|~~<br>~~|~~|-<br>~~ff~~<br>~~|~~<br>~~|~~<br>~~ft~~|nC<br>~~ff~~<br>~~|~~<br>~~ft~~|
|Qgs<br>~~ee ~~<br>~~ee~~|Gate-source charge<br> ~~eee~~<br>~~eee~~||-<br>~~Ff~~<br>~~|~~|28<br>~~Ff ff~~<br>~~|~~<br>~~|~~|-<br>~~ff~~<br>~~|~~<br>~~|~~<br>~~ft~~|nC<br>~~ff~~<br>~~|~~<br>~~ft~~|
|Qgd<br>~~ee~~|Gate-drain charge<br>~~eee~~||-<br>~~|~~|95<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~ft~~|nC<br>~~|~~<br>~~ft~~|
|Rg|Gate input resistance|f=1 MHz gate DC bias=0<br>Test signal level = 20 mV<br>open drain|-|2|-|Ω|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 

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**Electrical characteristics** 

**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD=300 V, ID= 32.5 A<br>RG= 4.7ΩVGS= 10 V<br>_(see Figure 13)_|-|206|-|ns|
|tr|Rise time||-|36|-|ns|
|td(off)|Turn-off delay time||-|40|-|ns|
|tf|Fall time||-|27.5|-|ns|



**Table 8. Source drain diode** 

|**Symbol**<br>~~es~~|**Parameter**<br>~~es~~|**Test conditions**<br>~~es~~|**Min.**<br>~~es~~|**Typ.**<br>~~es~~|**Max.**<br>~~es~~|**Unit**<br>~~es~~|
|---|---|---|---|---|---|---|
|ISD<br>~~es~~<br>~~a~~|Source-drain current<br>Source-drain current (pulsed)<br>~~es~~<br>~~ee~~|~~es~~<br>~~es~~|-<br>~~es~~<br>~~ee~~|~~es~~<br>~~ee~~|68<br>~~es~~<br>~~ee~~|A<br>~~es~~<br>~~ee~~|
|ISDM (1)<br>~~a~~<br>~~a~~<br>~~ee~~|Source-drain current (pulsed)<br>~~ee~~<br>~~eeGee~~|~~es~~<br>~~Gee~~|-<br>~~ee~~<br>~~Gee~~<br>~~ee~~|~~ee~~<br>~~Gee~~<br>~~ee~~|272<br>~~ee~~<br>~~Gee~~|A<br>~~ee~~<br>~~Gee~~|
|VSD (2)<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~ee~~|Forward on voltage<br>~~ee ~~<br>~~eeGee~~<br>~~**ee**~~|ISD= 68 A, VGS= 0<br> ~~es ~~<br>~~Gee~~<br>~~|~~|-<br> ~~ee ~~<br>~~Gee~~<br>~~ee~~<br>~~|~~<br>~~|~~|~~ee ~~<br>~~Gee~~<br>~~ee~~<br>~~|~~|1.6<br> ~~ee ~~<br>~~Gee~~<br>~~[|~~|V<br> ~~ee~~<br>~~Gee~~<br>~~[|~~|
|trr<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse recovery time<br>~~eeGee~~<br>~~**ee**~~|ISD= 68 A, di/dt = 100 A/µs<br>VDD= 100 V<br>_(see Figure 15)_<br>~~Gee~~<br>~~|~~|-<br>~~Gee~~<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~Ft~~|476<br>~~Gee~~<br>~~ee~~<br>~~|~~<br>~~Ft~~<br>~~|~~|~~Gee~~<br>~~[|~~<br>~~Ft~~<br>~~||~~|ns<br>~~Gee~~<br>~~[|~~<br>~~Ft~~<br>~~|~~|
|Qrr<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse recovery charge<br>~~**ee**~~<br>~~ee~~||-<br>~~ee ~~<br>~~|~~<br>~~|~~<br>~~Ft~~<br>~~Ft~~|10.5<br> ~~ee~~<br>~~|~~<br>~~Ft~~<br>~~|~~<br>~~Ft~~<br>~~|~~|~~[|~~<br>~~Ft~~<br>~~||~~<br>~~Ft~~<br>~~|fi~~|nC<br>~~[|~~<br>~~Ft~~<br>~~|~~<br>~~Ft~~<br>~~fi~~|
|IRRM<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse recovery current<br>~~**ee**~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~Ft~~<br>~~Ft~~<br>~~Ft~~|44<br>~~|~~<br>~~Ft~~<br>~~|~~<br>~~Ft~~<br>~~|~~<br>~~Ft~~<br>~~|~~|~~[|~~<br>~~Ft~~<br>~~||~~<br>~~Ft~~<br>~~|fi~~<br>~~Ft~~<br>~~||~~|A<br>~~[|~~<br>~~Ft~~<br>~~|~~<br>~~Ft~~<br>~~fi~~<br>~~Ft~~<br>~~|~~|
|trr<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse recovery time<br>~~ee~~<br>~~ee~~<br>~~ee~~|ISD= 68 A, di/dt = 100 A/µs<br>VDD= 100 V, Tj= 150 °C<br>_(see Figure 15)_<br>~~|~~|-<br>~~Ft~~<br>~~Ft~~<br>~~Pt~~|586<br>~~|~~<br>~~Ft~~<br>~~|~~<br>~~Ft~~<br>~~|~~<br>~~Pt~~<br>~~**|**~~|~~| |~~<br>~~Ft~~<br>~~|fi~~<br>~~Ft~~<br>~~||~~<br>~~Pt~~<br>~~**|**fi~~|ns<br>~~|~~<br>~~Ft~~<br>~~fi~~<br>~~Ft~~<br>~~|~~<br>~~Pt~~<br>~~fi~~|
|Qrr<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse recovery charge<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~Ft~~<br>~~Pt~~<br>~~|~~<br>~~|~~|15<br>~~|~~<br>~~Ft~~<br>~~|~~<br>~~Pt~~<br>~~**|**~~<br>~~fi~~|~~| fi~~<br>~~Ft~~<br>~~||~~<br>~~Pt~~<br>~~**|**fi~~<br>~~fi~~|nC<br>~~fi~~<br>~~Ft~~<br>~~|~~<br>~~Pt~~<br>~~fi~~<br>~~fi~~|
|IRRM<br>~~ee~~<br>~~ee~~|Reverse recovery current<br>~~ee~~<br>~~ee~~||-<br>~~Pt~~<br>~~|~~<br>~~|~~|51<br>~~|~~<br>~~Pt~~<br>~~**|**~~<br>~~fi~~|~~| |~~<br>~~Pt~~<br>~~**|**fi~~<br>~~fi~~|A<br>~~|~~<br>~~Pt~~<br>~~fi~~<br>~~fi~~|



1. Pulse width limited by safe operating area. 

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 

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**STW60NM50N** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area Figure 3. Thermal impedance** 

**==> picture [432 x 367] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15736v1 K AM09125v1<br>(A)<br>δ=0.5<br>0.2<br>10µs<br>10<br>Y N 100 µS 0.1 ] 0.05<br>10-1<br>1ms 0.02<br>1 10ms 0.01 Zth=k Rthj-c<br>δ=tp/τ<br>Single pulse<br>Tj=150°C<br>Seas eertit Tc=25°C ean tp<br>Single pulse τ<br>-2<br>0.1 SS crit ceed 10 TAME LAMM cats!<br>0.1 1 10 100 VDS(V) 10-4 10-3 10-2 10-1 tp [(s)]<br>Figure 4. Output characteristics Figure 5. Transfer characteristics<br>AM15737v1 AM15738v1<br>ID ID (A)<br>(A) VGS=7, 8, 9, 10V<br>10080 Pf Se 10080 PTTLease VDS=19V an<br>fo 6V LV EE LL<br>60 60<br>fo PEALE<br>40 | fA | | | 40 TLEELLT<br>5V<br>20 20<br>4V<br>0 0<br>0 5 10 15 20 VDS(V) 0 2 4 6 8 VGS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figure 6. Normalized V(BR)DSS vs temperature** 

## **Figure 7. Static drain-source on-resistance** 

**==> picture [425 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS AM09028v1 RDS(on) AM15739v1<br>(norm) ID=1mA (Ω)<br>1.10 P| | tt |<br>0.035 V GS =10V<br>1.08<br>oe 0.035 EEE<br>1.06 P| | tt LK i 4CEP<br>0.034<br>1.04 ae RRRUURRDZA0EEE<br>1.02 a 0.034 LTT PT TT<br>1.00<br>0.033<br>aee7eeee A<br>0.98<br>0.033<br>0.96<br>Yep 0.032 TALL<br>0.94 fT | LEE<br>0.92 0ylt|eet i ft td 0.032 LEEA<br>-50 -25 0 25 50 75 100 TJ(°C) 0 10 20 30 40 50 60 ID(A)<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**==> picture [448 x 395] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations<br>VGS AM15740v1 C AM15741v1<br>VDS<br>(V) VDS VDD=400V (V) (pF)<br>12<br>ID=68A 10000<br>350<br>Ciss<br>10 at J | =e<br>300<br>8 Aaie 71ae ] 1000 B<br>250<br>6 ieee 200 Coss<br>100<br>150<br>4 PAyt<br>100 10 Crss<br>2 ae<br>20<br>0 pv 0 1<br>0 50 100 150 200 Qg(nC) 0.1 1 10 100 VDS(V)DS(V)(V)<br>Figure 10. Normalized gate threshold voltage vs  Figure 11. Normalized on-resistance vs<br>temperatureperatureerature temperature<br>VGS(th) AM15742v1 RDS(on) AM15743v1<br>(norm) (norm)<br>1.05 2.1 ID=34 A<br>ID=250µA<br>1.00 P|Se| | | | | | | 1.9 |—+| , ++}| 4<br>0.95 aN 1.7 F | it | ft | Yl |<br>0.95 P| | NEL | 1.5 fF | | |tif<br>0.90 ewe 1.3 [<br>0.85 PT 1.1 Pt tT | JA |<br>0.80 P| | || || AL| KLTE 0.9 |Plof)Ti A7t | ll<br>0.75 | | | | | | EN | 0.7 Pix7t|<br>0.70 TF] | tt tN 0.5 7 | | tl | dt |<br>-50 -25 0 25 50 75 100 125 TJ(°C) -50 -25 0 25 50 75 100 125 TJ(°C)<br>**----- End of picture text -----**<br>


**==> picture [203 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
C AM15741v1<br>(pF)<br>10000<br>Ciss<br>=e<br>1000<br>B<br>Coss<br>100<br>Crss<br>10<br>1<br>0.1 1 10 100 VDS(V)DS(V)(V)<br>**----- End of picture text -----**<br>


**Figure 10. Normalized gate threshold voltage vs temperatureperatureerature** 

**Figure 12. Source-drain diode forward characteristics** 

**==> picture [199 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15744v1<br>VSD 1.4(V) TOO T J =-50°C TT<br>1.2<br>HELE oeeeett<br>1 TJ=25 ° C<br>el<br>0.8<br>Ze TJ=150°C<br>0.6 oa<br>0.4 PCE<br>0.2 CECE<br>0 CCE<br>0 10 20 30 40 50 60 ISD(A)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 13. Switching times test circuit for resistive load** 

**Figure 15. Test circuit for inductive load switching and diode recovery times** 

**Figure 17. Unclamped inductive waveform** 

**Figure 14. Gate charge test circuit** 

**Figure 16. Unclamped Inductive load test circuit** 

**Figure 18. Switching time waveform** 

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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

DocID023157 Rev 2 

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**STW60NM50N** 

**Package mechanical data** 

**Table 9. TO-247 mechanical data** 

||**Table 9. TO-247 mechanical data**|**Table 9. TO-247 mechanical data**|**Table 9. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~ee~~|||
||**Min.**<br>~~a~~|**Typ.**<br>~~a~~<br>~~ee~~|**Max.**<br>~~a~~|
|A<br>~~a~~|4.85|~~ee~~|5.15|
|A1<br>~~a~~|2.20||2.60|
|b<br>~~a~~|1.0||1.40|
|b1<br>~~a~~|2.0||2.40|
|b2<br>~~a~~|3.0||3.40|
|c<br>~~a~~<br>~~es~~|0.40||0.80|
|D<br>~~es~~|19.85||20.15|
|E<br>~~es~~<br>~~a~~|15.45||15.75|
|e<br>~~a~~|5.30|5.45|5.60|
|L<br>~~a~~|14.20||14.80|
|L1<br>~~a~~|3.70||4.30|
|L2<br>~~a~~<br>~~es~~||18.50||
|∅P<br>~~es~~|3.55||3.65|
|∅R<br>~~es~~<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



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**Package mechanical data** 

## **Figure 19. TO-247 drawing** 

**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|26-Apr-2012|1|First release.|
|16-Apr-2013|2|– Inserted:_Section 2.1: Electrical characteristics (curves)_<br>– Modified: IASvalue on_Table 4_<br>– Minor text changes|



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## **www.st.com** 

DocID023157 Rev 2 

13/13 



## Links

- [View this product on Novapart](https://novapart.co/products/STW60NM50N/power-mosfet-n-channel-500-v-68-a-0035-ohm-to-247)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/stmicroelectronics/stw60nm50n/mosfet-n-ch-500v-68a-to-247/dp/2807232)
---

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