# Power MOSFET, N Channel, 600 V, 52 A, 0.045 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3129783/)

**URL**: https://novapart.co/products/STW56N60M2/power-mosfet-n-channel-600-v-52-a-0045-ohm-to-247
**SKU**: STW56N60M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.4500
**Stock**: 200+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 350W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 52A |
| Drain Source On State Resistance | 0.045ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3129783/)

## **STW56N60M2** 

N-channel 600 V, 0.045 Ω typ., 52 A MDmesh™ M2 Power MOSFET in a TO-247 package 

**Datasheet** - **production data** 

## **Features** 

|**Features**||||
|---|---|---|---|
|**Order code**|**VDS@ TJmax**|**RDS(on)**<br>**max**|**ID**|
|STW56N60M2|650 V|0.055Ω|52 A|



- Extremely low gate charge 

- Excellent output capacitance (Coss) profile 

- 100% avalanche tested 

- Zener-protected 

## **Applications** 

## **Figure 1. Internal schematic diagram** 

- Switching applications 

## **Description** 

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STW56N60M2|56N60M2|TO-247|Tube|



_www.st.com_ 

December 2014 

DocID027243 Rev2 1/12 

This is information on a product in full production. 

**Contents** 

**STW56N60M2** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate- source voltage|±25|V|
|ID|Drain current (continuous) at TC= 25 °C|52|A|
|ID|Drain current (continuous) at TC= 100 °C|33|A|
|IDM<br>(1)|Drain current (pulsed)|208|A|
|PTOT|Total dissipation at TC= 25 °C|350|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|50|V/ns|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|150|°C|



1. Pulse width limited by safe operating area 

2. ISD ≤ 52 A, di/dt = 400 A/µs, peak VDS < V(BR)DSS, VDD = 400 V 

3. VDS ≤ 480 V 

**Table 3. Thermal data** 

||**Table 3. Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-amb|Thermal resistance junction-ambient max|50|°C/W|
|Rthj-case|Thermal resistance junction-case max|0.36|°C/W|



**Table 4. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Max current during repetitive or single pulse<br>avalanche (pulse width limited by TJMAX)|7.5|A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 50 V)|1100|mJ|



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**STW56N60M2** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5. On /off states** 

|||**Table 5. On /off states**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|600|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 600 V<br>VDS= 600 V, TC=125 °C|||1<br>100|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 25 V|||± 10|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|2|3|4|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 26 A||0.045|0.055|Ω|



**Table 6. Dynamic** 

|||**Table 6. Dynamic**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0|-|3750|-|pF|
|Coss|Output capacitance||-|175|-|pF|
|Crss|Reverse transfer<br>capacitance||-|6.6|-|pF|
|Co(er)<br>(1)|Equivalent Output<br>Capacitance|VGS= 0, VDS= 0 to 480V|-|740|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|-|4.7|-|Ω|
|Qg|Total gate charge|VDD= 480 V, ID= 52 A,<br>VGS= 10 V, (see_Figure 15_)|-|91|-|nC|
|Qgs|Gate-source charge||-|13.5|-|nC|
|Qgd|Gate-drain charge||-|41|-|nC|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

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**STW56N60M2** 

**Electrical characteristics** 

**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 26 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 16_and<br>_Figure 19_)|-|18|-|ns|
|tr|Rise time||-|26.5|-|ns|
|td(off)|Turn-off delay time||-|119|-|ns|
|tf|Fall time||-|14|-|ns|



**Table 8. Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||52|A|
|ISDM (1)|Source-drain current (pulsed)||-||208|A|
|VSD (2)|Forward on voltage|ISD= 52 A, VGS= 0|-||1.6|V|
|trr|Reverse recovery time|ISD= 52 A,<br>di/dt = 100 A/µs<br>VDD= 100 V (see_Figure 16_)|-|496||ns|
|Qrr|Reverse recovery charge||-|10||µC|
|IRRM|Reverse recovery current||-|41||A|
|trr|Reverse recovery time|ISD= 52 A,<br>di/dt = 100 A/µs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 16_)|-|632||ns|
|Qrr|Reverse recovery charge||-|14||µC|
|IRRM|Reverse recovery current||-|45||A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

DocID027243 Rev2 

5/12 

**STW56N60M2** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

**Figure 3. Thermal impedance** 

**Figure 4. Output characteristics** 

**Figure 5. Transfer characteristics** 

**Figure 6. Normalized gate threshold voltage vs. temperature** 

**Figure 7. Normalized V(BR)DSS vs. temperature** 

**==> picture [210 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
GIPD180920141442FSR<br>VGS(th)<br>(norm)<br>ID = 250 µA<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>-75 -25 25 75 125 Tj(°C)<br>**----- End of picture text -----**<br>


**==> picture [79 x 8] intentionally omitted <==**

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DocID027243 Rev2<br>**----- End of picture text -----**<br>


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**STW56N60M2** 

**Electrical characteristics** 

**Figure 8. Static drain-source on-resistance** 

**Figure 10. Gate charge vs. gate-source voltage** 

**Figure 12. Output capacitance stored energy** 

**Figure 9. Normalized on-resistance vs. temperature** 

**Figure 11. Capacitance variations** 

**Figure 13. Source-drain diode forward characteristics** 

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**STW56N60M2** 

**Test circuits** 

## **3 Test circuits** 

**Figure 14. Switching times test circuit for resistive load** 

**Figure 15. Gate charge test circuit** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>**----- End of picture text -----**<br>


## **Figure 18. Unclamped inductive waveform** 

## **Figure 19. Switching time waveform** 

**==> picture [462 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
�������� ton toff<br>�� tdon tr tdoff tf<br>90% 90%<br>���<br>10%<br>�� 0 10% VDS<br>��� ��� 90%<br>VGS<br>��������� 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

**==> picture [126 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 20. TO-247 drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_H<br>**----- End of picture text -----**<br>


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**STW56N60M2** 

**Package mechanical data** 

**Table 9. TO-247 mechanical data** 

||**Table 9. TO-247 mechanical data**|**Table 9. TO-247 mechanical data**|**Table 9. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**|**mm.**|||
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S|5.30|5.50|5.70|



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**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|01-Dec-2014|1|Initial release.|
|10-Dec-2014|2|Updated_Section 3: Test circuits_.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

12/12 DocID027243 Rev2 



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