# Power MOSFET, Mdmesh DM2, N Channel, 600 V, 50 A, 0.052 ohm, TO-247, Through Hole
**URL**: https://novapart.co/products/STW56N60DM2/power-mosfet-mdmesh-dm2-n-channel-600-v-50-a-0052
**SKU**: STW56N60DM2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €4.2900
**Stock**: 200+
**Lead Time**: 127 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 360W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 50A |
| Drain Source On State Resistance | 0.052ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2531121/)
## **STW56N60DM2**
## N-channel 600 V, 0.052 Ω typ., 50 A MDmesh™ DM2 Power MOSFET in a TO-247 package
Datasheet - production data
## **Features**
|**Order code**|**VDS**|**RDS(on)**
**max.**|**ID**|**PTOT**|
|---|---|---|---|---|
|STW56N60DM2|600 V|0.060 Ω|50 A|360 W|
- Fast-recovery body diode
**==> picture [62 x 53] intentionally omitted <==**
**----- Start of picture text -----**
3
2
1
TO-247
**----- End of picture text -----**
- Extremely low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
**Figure 1: Internal schematic diagram**
## **Applications**
> D(2) • Switching applications **Description** This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode G(1) series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. S(3) AM15572v1_no_tab **Table 1: Device summary Order code Marking Package Packing** STW56N60DM2 56N60DM2 TO-247 Tube ~~es~~
This is information on a product in full production.
_www.st.com_
June 2015 DocID026982 Rev 3
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|**Contents**
**STW56N60DM2**|**Contents**
**STW56N60DM2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1
Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 8**|
|**4**|**Package information ....................................................................... 9**|
||4.1
TO-247 package information ............................................................. 9|
|**5**|**Revision history ............................................................................ 11**|
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**Electrical ratings**
## **1 Electrical ratings**
**Table 2: Absolute maximum ratings**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|±25|V|
|ID|Drain current (continuous) at Tcase= 25 °C|50|A|
||Drain current (continuous) at Tcase= 100 °C|31||
|IDM
_(1)_|Drain current (pulsed)|200|A|
|PTOT|Total dissipation at Tcase= 25 °C|360|W|
|dv/dt_(2)_|Peak diode recoveryvoltage slope|50|V/ns|
|dv/dt_(3)_|MOSFET dv/dt ruggedness|50||
|Tstg|Storage temperature|-55 to 150|°C|
|Tj|Operating junction temperature|||
## **Notes:**
(1) Pulse width is limited by safe operating area.
(2) ISD ≤ 50 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.
(3) VDS ≤ 480 V.
## **Table 3: Thermal data**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case|0.35|°C/W|
|Rthj-amb|Thermal resistancejunction-ambient|50||
## **Table 4: Avalanche characteristics**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAS
_(1)_|Avalanche current, repetitive or not repetitive|12|A|
|EAS
_(2)_|Singlepulse avalanche energy|800|mJ|
## **Notes:**
> (1) Pulse width limited by Tjmax.
> (2) starting Tj = 25 °C, ID = IAS, VDD = 50 V.
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**STW56N60DM2**
**Electrical characteristics**
## **2 Electrical characteristics**
(Tcase = 25 °C unless otherwise specified)
**Table 5: Static**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown
voltage|VGS= 0 V, ID= 1 mA|600|||V|
|IDSS|Zero gate voltage drain
current|VGS= 0 V, VDS= 600 V|||10|µA|
|||VGS= 0 V, VDS= 600 V,
Tcase= 125 °C|||100||
|IGSS|Gate-bodyleakage current|VDS= 0 V, VGS= ±25 V|||±5|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|3|4|5|V|
|RDS(on)|Static drain-source on-
resistance|VGS= 10 V, ID= 25 A||0.052|0.060|Ω|
**Table 6: Dynamic**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,
VGS= 0 V|-|4100|-|pF|
|Coss|Output capacitance||-|190|-||
|Crss|Reverse transfer
capacitance||-|3.2|-||
|Coss eq.|Equivalent output
capacitance|VDS= 0 to 480 V, VGS= 0 V|-|325|-|pF|
|RG|Intrinsicgate resistance|f = 1 MHz, ID= 0 A|-|4.2|-|Ω|
|Qg|Totalgate charge|VDD= 480 V, ID= 50 A,
VGS= 10 V (see_Figure 15:_
_"Gate charge test circuit"_)|-|90|-|nC|
|Qgs|Gate-source charge||-|18|-||
|Qgd|Gate-drain charge||-|44|-||
**Table 7: Switching times**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 300 V, ID= 25 A
RG= 4.7 Ω (see_Figure 14:_
_"Switching times test circuit_
_for resistive load"_and
_Figure 19: "Switching time_
_waveform"_)|-|24|-|ns|
|tr|Rise time||-|60|-||
|td(off)|Turn-off delaytime||-|130|-||
|tf|Fall time||-|12|-||
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**Electrical characteristics**
**Table 8: Source-drain diode**
|**Symbo**
**l**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||50|A|
|ISDM|Source-drain current
(pulsed)||-||200|A|
|VSD
_(1)_|Forward on voltage|VGS= 0 V, ISD= 50 A|-||1.6|V|
|trr|Reverse recoverytime|ISD= 50 A,
di/dt = 100 A/µs,
VDD= 60 V (see_Figure 16:_
_"Test circuit for inductive_
_load switching and diode_
_recovery times"_)|-|140||ns|
|Qrr|Reverse recoverycharge||-|0.7||µC|
|IRRM|Reverse recovery current||-|10.6||A|
|trr|Reverse recoverytime|ISD= 50 A,
di/dt = 100 A/µs,
VDD= 60 V, Tj= 150 °C
(see_Figure 16: "Test circuit_
_for inductive load switching_
_and diode recovery times"_)|-|245||ns|
|Qrr|Reverse recoverycharge||-|2.6||µC|
|IRRM|Reverse recovery current||-|21||A|
## **Notes:**
(1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
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**Electrical characteristics**
## **2.1 Electrical characteristics (curves)**
**==> picture [389 x 185] intentionally omitted <==**
**----- Start of picture text -----**
Figure 3: Thermal impedance
Figure 2: Safe operating area
**----- End of picture text -----**
**Figure 4: Output characteristics**
**==> picture [155 x 142] intentionally omitted <==**
**==> picture [146 x 10] intentionally omitted <==**
**----- Start of picture text -----**
Figure 5: Transfer characteristics
**----- End of picture text -----**
**==> picture [157 x 143] intentionally omitted <==**
**Figure 6: Gate charge vs gate-source voltage**
**==> picture [156 x 142] intentionally omitted <==**
**Figure 7: Static drain-source on-resistance**
**==> picture [162 x 143] intentionally omitted <==**
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**Electrical characteristics**
**Figure 9: Normalized gate threshold voltage Figure 8: Capacitance variations vs temperature**
**==> picture [156 x 143] intentionally omitted <==**
**==> picture [155 x 143] intentionally omitted <==**
**==> picture [398 x 179] intentionally omitted <==**
**----- Start of picture text -----**
Figure 10: Normalized on-resistance vs Figure 11: Normalized V(BR)DSS vs
temperature temperature
**----- End of picture text -----**
**Figure 13: Source- drain diode forward Figure 12: Output capacitance stored energy characteristics**
**==> picture [162 x 142] intentionally omitted <==**
**==> picture [158 x 143] intentionally omitted <==**
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**Test circuits**
## **3 Test circuits**
**Figure 14: Switching times test circuit for resistive load**
**Figure 15: Gate charge test circuit**
**==> picture [442 x 153] intentionally omitted <==**
**Figure 16: Test circuit for inductive load switching and diode recovery times**
**Figure 17: Unclamped inductive load test circuit**
**Figure 18: Unclamped inductive waveform**
**==> picture [62 x 33] intentionally omitted <==**
**Figure 19: Switching time waveform**
**==> picture [87 x 119] intentionally omitted <==**
**==> picture [92 x 160] intentionally omitted <==**
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**Package information**
## **4 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
## **4.1 TO-247 package information**
**Figure 20: TO-247 package outline**
**==> picture [406 x 400] intentionally omitted <==**
**----- Start of picture text -----**
0075325_H
**----- End of picture text -----**
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**Package information**
**Table 9: TO-247 package mechanical data**
|**Dim.**||**mm.**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|ØP|3.55||3.65|
|ØR|4.50||5.50|
|S|5.30|5.50|5.70|
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**Revision history**
## **5 Revision history**
**Table 10: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|08-Oct-2014|1|First release.|
|09-Jun-2015|2|Text and formatting changes throughout document.
On cover page:
- updated title description and features
In Section 1 Electrcial ratings:
- updated Table 2. Absolute maximum ratings
- updated Table 4. Avalanche characteristics
In Section 2 Electrical characteristics:
- updated and renamed Table 5. Static (was On /off states)
- updated Table 6. Dynamic
- updated Table 7. Switching times
- updated Table 8. Source drain diode
Added Section 2.1 Electrical characteristics (curves)|
|15-Jun-2015|3|Datasheetpromoted frompreliminarydata toproduction data|
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**STW56N60DM2**
## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2015 STMicroelectronics – All rights reserved
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## Links
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- [Supplier page](https://es.farnell.com/stmicroelectronics/stw56n60dm2/mosfet-n-ch-600v-50a-to-247/dp/2531121)
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