# Power MOSFET, N Channel, 600 V, 51 A, 0.047 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2098397/)

**URL**: https://novapart.co/products/STW55NM60ND/power-mosfet-n-channel-600-v-51-a-0047-ohm-to-247
**SKU**: STW55NM60ND
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €11.4900
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 350W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 350W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.047ohm |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 51A |
| Drain Source On State Resistance | 0.047ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098397/)

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## **STW55NM60ND** 

## N-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package 

## **Datasheet — production data** 

## **Features** 

|**Type**|**VDSS**<br>**(@TJmax)**|**RDS(on)**<br>**max**|**ID**|
|---|---|---|---|
|STW55NM60ND|650 V|< 0.060Ω|51 A|



- The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247 

- 100% avalanche tested 

- Low input capacitance and gate charge 

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- Low gate input resistance 

- High dv/dt and avalanche capabilities 

## **Application** 

- Switching applications 

## **Description** 

This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching  performance. It is ideal for bridge topologies and ZVS phase-shift converters. 

## **Figure 1. Internal schematic diagram** 

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**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STW55NM60ND|55NM60ND|TO-247|Tube|



December 2012 

Doc ID 14169 Rev 3 

1/12 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STW55NM60ND** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|



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**STW55NM60ND** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage|600|V|
|VGS|Gate- source voltage|±25|V|
|ID|Drain current (continuous) at TC= 25 °C|51|A|
|ID|Drain current (continuous) at TC= 100 °C|32|A|
|IDM (1)|Drain current (pulsed)|204|A|
|PTOT|Total dissipation at TC= 25 °C|350|W|
|dv/dt(2)|Peak diode recovery voltage slope|40|V/ns|
|Tstg|Storage temperature|–55 to 150|°C|
|Tj|Max. operating junction temperature|150|°C|



1. Pulse width limited by safe operating area 

2. ISD ≤  51 A, di/dt  ≤  600 A/μs, VDD = 80% V(BR)DSS 

## **Table 3. Thermal data** 

|**Table 3.**|**Thermal data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|Rthj-case|Thermal resistance junction-case max|0.36|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|50|°C/W|
|Tl|Maximum lead temperature for soldering<br>purpose|300|°C|



## **Table 4. Avalanche characteristics** 

|**Table 4.**|**Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Max value**|**Unit**|
|IAS|Avalanche current, repetitive or not-<br>repetitive (pulse width limited by Tjmax)|15|A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25 °C, ID= IAS, VDD= 50 V)|1600|mJ|



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**STW55NM60ND** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25°C unless otherwise specified) 

## **Table 5. On/off states** 

|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 1 mA, VGS= 0|600|||V|
|dv/dt(1)|Drain source voltage slope|VDD=480 V,  ID= 51 A,<br>VGS=10 V|30|||V/ns|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 600 V<br>VDS= 600 V, TC= 125 °C|||10<br>100|μA<br>μA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 20 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 μA|3|4|5|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 25.5 A||0.047|0.060|Ω|



1. Characteristic value at turn off on inductive load. 

**Table 6. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|gfs<br>(1)|Forward transconductance|VDS= 15 V,ID= 25.5 A||45||S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS= 50 V, f = 1 MHz,<br>VGS= 0||5800<br>300<br>30||pF<br>pF<br>pF|
|Coss eq.<br>(2)|Equivalent output<br>capacitance|VGS= 0, VDS= 0 to 480 V||900||pF|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|VDD= 300 V, ID= 25.5 A<br>RG= 4.7Ω,VGS= 10 V<br>_(see Figure 19),_<br>_(see Figure 14)_||33<br>68<br>188<br>96||ns<br>ns<br>ns<br>ns|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 480 V, ID= 51 A,<br>VGS= 10 V,<br>_(see Figure 15)_||190<br>30<br>90||nC<br>nC<br>nC|
|Rg|Gate input resistance|f=1 MHz Gate DC Bias = 0<br>Test signal level = 20 mV<br>Open drain||2.5||Ω|



1. Pulsed: pulse duration= 300 μs, duty cycle 1.5% 

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

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**STW55NM60ND** 

**Electrical characteristics** 

## **Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM (1)|Source-drain current<br>Source-drain current (pulsed)||||51<br>204|A<br>A|
|VSD (2)|Forward on voltage|ISD= 51 A, VGS= 0|||1.3|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 51 A, VDD= 60 V<br>di/dt = 100 A/μs<br>_(see Figure 16)_||200<br>1.8<br>18||ns<br>μC<br>A|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 51 A,VDD= 60 V<br>di/dt = 100 A/μs,<br>Tj= 150 °C<br>_(see Figure 16)_||280<br>3.4<br>24||ns<br>μC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%. 

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**STW55NM60ND** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area** 

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**Figure 3. Thermal impedance** 

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## **Figure 4. Output characteristics** 

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## **Figure 5. Transfer characteristics** 

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## **Figure 6. Transconductance** 

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## **Figure 7. Static drain-source on-resistance** 

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**STW55NM60ND** 

**Electrical characteristics** 

## **Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations** 

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## **Figure 10. Normalized gate threshold voltage vs temperature** 

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## **Figure 11. Normalized on resistance vs temperature** 

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**Figure 12. Source-drain diode forward characteristics** 

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**Figure 13. Normalized BVDSS vs temperature** 

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**STW55NM60ND** 

**Test circuits** 

## **3 Test circuits** 

**Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit resistive load** 

**==> picture [450 x 148] intentionally omitted <==**

**Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit** 

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## **Figure 18. Unclamped inductive waveform** 

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## **Figure 19. Switching time waveform** 

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**STW55NM60ND** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: _www.st.com._ ECOPACK is an ST trademark. 

**Table 8. TO-247 mechanical data** 

|**Dim.**|**mm.**|**mm.**|**mm.**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S|5.30|5.50|5.70|



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**STW55NM60ND** 

**Package mechanical data** 

## **Figure 20. TO-247 drawing** 

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0075325_G<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

## **Table 9. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|16-Nov-2007|1|First release.|
|22-Apr-2008|2|Document status promoted from preliminary data to datasheet.|
|19-Dec-2012|3|Title changed on the cover page.<br>Minor text changes.<br>Updated_Section 4: Package mechanical data_.|



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