# Power MOSFET, N Channel, 1.5 kV, 1.3 A, 6 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:1752211/)

**URL**: https://novapart.co/products/STW3N150/power-mosfet-n-channel-15-kv-13-a-6-ohm-to-247
**SKU**: STW3N150
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.7700
**Stock**: 200+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:1.5kV; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 140W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 1.5kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.3A |
| Drain Source On State Resistance | 6ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1752211/)

## **STFW3N150,  STH3N150-2 STP3N150,  STW3N150** Datasheet 

N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H[2] PAK-2, TO-220 and TO247 packages 

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TAB<br>2<br>3<br>1 2 3 H PAK-22 1<br>TO-3PF<br>TAB<br>TO-220 1  2  3 1  2  3<br>TO-247<br>D(2, TAB) D(TAB)<br>G(1) G(1)<br>S(3) S(2, 3)<br>(TO-3PF, TO-220 and TO-247) (H PAK-2)2<br>**----- End of picture text -----**<br>


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AM15557v1<br>**----- End of picture text -----**<br>


## **Features** 

|**Order codes**|**VDS**|**RDS(on) max.**|**ID**|**PTOT**|
|---|---|---|---|---|
|STFW3N150|1500 V|9 Ω|2.5 A|63 W|
|STH3N150-2||||140 W|
|STP3N150|||||
|STW3N150|||||



- 100% avalanche tested 

- Intrinsic capacitances and Qg minimized 

- High speed switching 

- Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) 

## **Applications** 

- Switching applications 

## **Description** 

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. 

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## **Product status link** 

STFW3N150 STH3N150-2 STP3N150 STW3N150 

**DS5052** - **Rev 12** - **May 2020** For further information contact your local STMicroelectronics sales office. 

www.st.com 

**STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical ratings** 

**1** 

## **Electrical ratings** 

**Table 1.** 

|**Sbl**|**P**|**Value**|**Value**|**Value**|**Value**|**Ui**|
|---|---|---|---|---|---|---|
|**ymo**|**arameter**|**TO-3PF**|**H2PAK-2**|**TO-220**|**TO-247**|**nt**|
|VDS|Drain-source voltage|1500||||V|
|VGS|Gate-source voltage|±30||||V|
|ID|Drain current (continuous) at TC= 25 °C|2.5(1)|2.5|||A|
||Drain current (continuous) at TC= 100 °C|1.6(1)|1.6||||
|IDM(2)|Drain current (pulsed)|10||||A|
|PTOT|Total power dissipation at TC= 25 °C|63|140|||W|
|VISO|Insulation withstand voltage (RMS) from all three leads to<br>external heat sink (t = 1 s; TC= 25 °C)|3.5||||kV|
||Derating factor|0.5|1.12|||W/°C|
|Tstg|Storage temperature range|-55 to 150||||°C|
|TJ|Operating junction temperature range||||||



_1. Limited by maximum junction temperature._ 

_2. Pulse width limited by safe operating area._ 

**Table 2. Thermal data** 

|**Sbl**|**P**|**Value**|**Value**|**Value**|**Value**|**Ui**|
|---|---|---|---|---|---|---|
|**ymo**|**arameter**|**TO-3PF**|**H2PAK-2**|**TO-220**|**TO-247**|**nt**|
|Rthj-case|Thermal resistance junction-case|2|0.89|||°C/W|
|Rthj-amb|Thermal resistance junction-ambient|50||62.5|50|°C/W|
|Rthj-pcb(1)|Thermal resistance junction-pcb||35|||°C/W|



_1. When mounted on 1 inch[2] FR-4 board, 2 oz Cu._ 

**Table 3.** 

|**Symbol**|**Parameter**|**Max value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by TJmax)|2.5|A|
|EAS|Single pulse avalanche energy<br>(starting TJ= 25 °C, ID= IAR, VDD= 50 V)|450|mJ|



**DS5052** - **Rev 12** 

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**STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 4. Static** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown voltage|VGS= 0 V, ID= 1 mA|1500|||V|
|IDSS|Zero gate voltage drain current|VGS= 0 V, VDS= 1500 V|||10|µA|
|||VGS= 0 V, VDS= 1500 V, TC= 125 °C(1)|||500||
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ±30 V|||±100|nA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on)|Static drain-source on-resistance|VGS= 10 V, ID= 1.3 A||6|9|Ω|



_1. Defined by design, not subject to production test._ 

**Table 5. Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 25 V, f = 1 MHz, VGS= 0 V|-|939|-|pF|
|Coss|Output capacitance||-|102|-||
|Crss|Reverse transfer capacitance||-|13.2|-||
|Coss eq.(1)|Equivalent output capacitance|VDS= 0 to 1200 V, VGS= 0 V|-|100|-|pF|
|Rg|Gate input resistance|f = 1 MHz, gate DC Bias = 0,<br>test signal level = 20 mV, ID= 0 A|-|4|-|Ω|
|Qg|Total gate charge|VDD= 1200 V, ID= 2.5 A, VGS= 0 to 10 V<br>(seeFigure 18. Test circuit for gate<br>charge behavior)|-|29.3|-|nC|
|Qgs|Gate-source charge||-|4.6|-||
|Qgd|Gate-drain charge||-|17|-||



_1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS._ 

**Table 6. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 750 V, ID= 1.25 A,<br>RG= 4.7 Ω, VGS= 10 V<br>(seeFigure 17. Test circuit for resistive<br>load switching timesand<br>Figure 22. Switching time waveform)|-|24|-|ns|
|tr|Rise time||-|47|-||
|td(off)|Turn-off delay time||-|45|-||
|tf|Fall time||-|61|-||



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**STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics** 

## **Table 7. Source-drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain current||-||2.5|A|
|ISDM (1)|Source-drain current (pulsed)||-||10|A|
|VSD(2)|Forward on voltage|VGS= 0 V, ISD= 2.5 A|-||1.6|V|
|trr|Reverse recovery time|ISD= 2.5 A, di/dt = 100 A/µs,<br>VDD= 60 V<br>(seeFigure 19. Test circuit for inductive<br>load switching and diode recovery times)|-|410||ns|
|Qrr|Reverse recovery charge||-|2.4||µC|
|IRRM|Reverse recovery current||-|11.7||A|
|trr|Reverse recovery time|ISD= 2.5 A, di/dt = 100 A/µs,<br>VDD= 60 V, TJ= 150 °C<br>(seeFigure 19. Test circuit for inductive<br>load switching and diode recovery times)|-|540||ns|
|Qrr|Reverse recovery charge||-|3.3||µC|
|IRRM|Reverse recovery current||-|12.3||A|



_1. Pulse width is limited by safe operating area._ 

_2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%._ 

**DS5052** - **Rev 12** 

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**STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics (curves)** 

## **2.1 Electrical characteristics (curves)** 

**Figure 1. Safe operating area for TO-3PF** 

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**----- Start of picture text -----**<br>
ID AM03941v1<br>(A)<br>10<br>10µs<br>1<br>100µs<br>1ms<br>0.1 Tj=150°C  10ms<br>Tc=25°C<br>Sinlge<br>pulse<br>0.01<br>0.1  1  10  100  1000 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 3. Safe operating area for H[2] PAK-2 and TO-220** 

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HV37430<br>**----- End of picture text -----**<br>


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**Figure 5. Safe operating area for TO-247** 

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HV37440<br>**----- End of picture text -----**<br>


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**Figure 2. Thermal impedance for TO-3PF** 

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K  ZTH_TO3PF<br>10 [-1] Zth=k*Rthj-c<br>10 [-2]<br>10  [-5] 10  [-4] 10  [-3] 10  [-2] 10  [-1] 10  [0] t p (s)<br>**----- End of picture text -----**<br>


**Figure 4. Thermal impedance for H[2] PAK-2 and TO-220** 

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GC20540<br>**----- End of picture text -----**<br>


**Figure 6. Thermal impedance for TO-247** 

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GC20530<br>**----- End of picture text -----**<br>


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**STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics (curves)** 

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Figure 7. Output characteristics<br>HV37460<br>**----- End of picture text -----**<br>


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Figure 8. Transfer characteristics<br>HV37465<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 9. Normalized V(BR)DSS vs temperature Figure 10. Static drain-source on-resistance<br>HV37470 HV37480<br>**----- End of picture text -----**<br>


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Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations<br>HV37490 HV37500<br>**----- End of picture text -----**<br>


**DS5052** - **Rev 12** 

**page 6/22** 

**STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics (curves)** 

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**----- Start of picture text -----**<br>
Figure 13. Normalized gate threshold voltage vs<br>Figure 14. Normalized on resistance vs temperature<br>temperature<br>HV37520<br>HV37510<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 15. Source-drain diode forward characteristics Figure 16. Maximum avalanche energy vs TJ<br>HV37540 HV37530<br>**----- End of picture text -----**<br>


**DS5052** - **Rev 12** 

**page 7/22** 

**STFW3N150, STH3N150-2, STP3N150, STW3N150 Test circuits** 

**3 Test circuits** 

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Figure 17. Test circuit for resistive load switching times Figure 18. Test circuit for gate charge behavior<br>VDD<br>12 V 47 kΩ<br>1 kΩ<br>100 nF<br>RL 2200 3.3<br>+ μF μF VDD<br>VD VGS IG= CONST 100 Ω D.U.T.<br>VGS RG D.U.T. pulse width 2200 + 2.7 kΩ VG<br>pulse width μF<br>47 kΩ<br>1 kΩ<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 19. Test circuit for inductive load switching and<br>Figure 20. Unclamped inductive load test circuit<br>diode recovery times<br>A A A L<br>G D D.U.T. fastdiode 100 µH VD 2200 3.3<br>25 Ω S B B B D µF3.3 + 1000µF VDD ID + µF µF VDD<br>G D.U.T.<br>+ RG S Vi D.U.T.<br>_ pulse width<br>AM01471v1<br>AM01470v1<br>**----- End of picture text -----**<br>


**==> picture [513 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 22. Switching time waveform<br>Figure 21. Unclamped inductive waveform<br>ton toff<br>V(BR)DSS<br>td(on) tr td(off) tf<br>VD<br>90% 90%<br>IDM<br>ID 0 10% VDS 10%<br>VDD VDD VGS 90%<br>AM01472v1 0 10%<br>AM01473v1<br>**----- End of picture text -----**<br>


**DS5052** - **Rev 12** 

**page 8/22** 

**STFW3N150, STH3N150-2, STP3N150, STW3N150 Package information** 

**4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

**4.1 TO-220 type A package information** 

**Figure 23. TO-220 type A package outline** 

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0015988_typeA_Rev_23<br>**----- End of picture text -----**<br>


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**STFW3N150, STH3N150-2, STP3N150, STW3N150 TO-220 type A package information** 

## **Table 8. TO-220 type A package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.55|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10.00||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13.00||14.00|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|
|Slug flatness||0.03|0.10|



**DS5052** - **Rev 12** 

**page 10/22** 

**STFW3N150, STH3N150-2, STP3N150, STW3N150 H²PAK-2 package information** 

## **4.2 H²PAK-2 package information** 

**Figure 24. H²PAK-2 package outline** 

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8159712_9<br>**----- End of picture text -----**<br>


**DS5052** - **Rev 12** 

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**STFW3N150, STH3N150-2, STP3N150, STW3N150 H²PAK-2 package information** 

**Table 9. H²PAK-2 package mechanical data** 

|**Di**|**mm**|**mm**||
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.30|-|4.70|
|A1|0.03||0.20|
|C|1.17||1.37|
|D|8.95||9.35|
|e|4.98||5.18|
|E|0.50||0.90|
|F|0.78||0.85|
|F2|1.14||1.70|
|H|10.00||10.40|
|H1|7.40||7.80|
|J1|2.49||2.69|
|L|15.30||15.80|
|L1|1.27||1.40|
|L2|4.93||5.23|
|L3|6.85||7.25|
|L4|1.50||1.70|
|M|2.60||2.90|
|R|0.20||0.60|
|V|0°||8°|



**Figure 25. H²PAK-2 recommended footprint** 

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8159712_9<br>**----- End of picture text -----**<br>


_Note: Dimensions are in mm._ 

**DS5052** - **Rev 12** 

**page 12/22** 

**STFW3N150, STH3N150-2, STP3N150, STW3N150 TO-247 package information** 

## **4.3 TO-247 package information** 

## **Figure 26. TO-247 package outline** 

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0075325_9<br>**----- End of picture text -----**<br>


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**STFW3N150, STH3N150-2, STP3N150, STW3N150 TO-247 package information** 

## **Table 10. TO-247 package mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|ØP|3.55||3.65|
|ØR|4.50||5.50|
|S|5.30|5.50|5.70|



**DS5052** - **Rev 12** 

**page 14/22** 

**STFW3N150, STH3N150-2, STP3N150, STW3N150 TO-3PF package information** 

## **4.4 TO-3PF package information** 

**Figure 27. TO-3PF package outline** 

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**----- Start of picture text -----**<br>
7627132_6<br>**----- End of picture text -----**<br>


**DS5052** - **Rev 12** 

**page 15/22** 

**STFW3N150, STH3N150-2, STP3N150, STW3N150 TO-3PF package information** 

## **Table 11. TO-3PF mechanical data** 

|**Di**|**mm**|**mm**|**mm**|
|---|---|---|---|
|**m.**|**Min.**|**Typ.**|**Max.**|
|A|5.30||5.70|
|C|2.80||3.20|
|D|3.10||3.50|
|D1|1.80||2.20|
|E|0.80||1.10|
|F|0.65||0.95|
|F2|1.80||2.20|
|G|10.30||11.50|
|G1||5.45||
|H|15.30||15.70|
|L|9.80|10.00|10.20|
|L2|22.80||23.20|
|L3|26.30||26.70|
|L4|43.20||44.40|
|L5|4.30||4.70|
|L6|24.30||24.70|
|L7|14.60||15.00|
|N|1.80||2.20|
|R|3.80||4.20|
|Dia|3.40||3.80|



**DS5052** - **Rev 12** 

**page 16/22** 

**STFW3N150, STH3N150-2, STP3N150, STW3N150 Packing information** 

## **4.5 Packing information** 

**Figure 28. Tape outline** 

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**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>F<br>iy: pS<br>K0 W<br>B0<br>‘aac :<br>A0 P1 D1<br>—_<br>User direction of feed<br>rn Bending radius<br>User direction of feed<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
R<br>Bending radius<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
AM08852v2<br>**----- End of picture text -----**<br>


**DS5052** - **Rev 12** 

**page 17/22** 

**STFW3N150, STH3N150-2, STP3N150, STW3N150 Packing information** 

**Figure 29. Reel outline** 

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**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40 mm min.<br>Access hole<br>At slot location<br>B<br>D<br>C<br>N<br>A<br>G measured<br>Tape slot<br>In core for<br>Full radius At hub<br>Tape start<br>**----- End of picture text -----**<br>


**Table 12. Tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Di**|**mm**||**Di**|**mm**||
|**m.**|**Min.**|**Max.**|**m.**|**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1|Base quantity||1000|
|P2|1.9|2.1|Bulk quantity||1000|
|R|50|0.35<br>24.3||||
|T|0.25|||||
|W|23.7|||||



**DS5052** - **Rev 12** 

**page 18/22** 

**STFW3N150, STH3N150-2, STP3N150, STW3N150 Ordering information** 

## **5** 

## **Ordering information** 

## **Table 13. Order codes** 

|**Order codes**|**Marking**|**Package**|**Packing**|
|---|---|---|---|
|STFW3N150|3N150|TO-3PF|Tube|
|STH3N150-2|H3N150|H2PAK-2|Tape and reel|
|STP3N150|P3N150|TO-220|Tube|
|STW3N150|3N150|TO-247||



**DS5052** - **Rev 12** 

**page 19/22** 

**STFW3N150, STH3N150-2, STP3N150, STW3N150** 

## **Revision history** 

## **Table 14. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|12-Jan-2007|1|First release|
|17-Apr-2007|2|Added new value on_Table 6_.|
|14-May-2007|3|The document has been reformatted|
|29-Aug-2007|4|RDS(on) value changed, updated_Figure 15_|
|09-Apr-2008|5|Added new package: TO-3PF|
|13-Feb-2009|6|Added PTOT value for TO-3PF (_Table 2: Absolute maximum ratings_)|
|01-Dec-2009|7|– Document status promoted from preliminary data to datasheet<br>– Removed TO-220FH package and mechanical data|
|10-Dec-2009|8|Corrected VISO value in_Table 2: Absolute maximum ratings_|
|29-Jun-2010|9|Corrected unit in_Table 3_.|
|08-Feb-2013|10|– Minor text changes<br>– Modified:_Table 3_<br>– Changed:_Figure 1_<br>– Added: H2PAK-2 package|
|18-Feb-2014|11|– Modified:_Figure 1_<br>– Updated:_Figure 18_,_19_,_20_and_21_<br>– Updated:_Figure 27_and_Table 11_<br>– Updated:_Section 4: Package mechanical data_<br>– Minor text changes|
|12-May-2020|12|UpdatedSection  5  Ordering information.<br>Minor text changes.|



**DS5052** - **Rev 12** 

**page 20/22** 

**STFW3N150, STH3N150-2, STP3N150, STW3N150** 

**Contents** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|
|**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**|
||**2.1**<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**|
|**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**|
||**4.1**<br>TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||**4.2**<br>H²PAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
||**4.3**<br>TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13|
||**4.4**<br>TO-3PF package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15|
||**4.5**<br>Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17|
|**5**|**Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19**|
|**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20**||



**DS5052** - **Rev 12** 

**page 21/22** 

**STFW3N150, STH3N150-2, STP3N150, STW3N150** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2020 STMicroelectronics – All rights reserved 

**DS5052** - **Rev 12** 

**page 22/22** 



## Links

- [View this product on Novapart](https://novapart.co/products/STW3N150/power-mosfet-n-channel-15-kv-13-a-6-ohm-to-247)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stw3n150/mosfet-n-ch-1500v-2-5a-to-247/dp/1752211)
---

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