# Power MOSFET, N Channel, 600 V, 20 A, 0.15 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2784049/)

**URL**: https://novapart.co/products/STW27N60M2-EP/power-mosfet-n-channel-600-v-20-a-015-ohm-to-247
**SKU**: STW27N60M2-EP
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.5400
**Stock**: 200+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh, M2 |
| Qualification | - |
| Power Dissipation | 170W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 20A |
| Drain Source On State Resistance | 0.15ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2784049/)

## **STP27N60M2-EP, STW27N60M2-EP** 

N-channel 600 V, 0.150 Ω typ., 20 A MDmesh™ M2 EP Power MOSFETs in TO-220 and TO-247 packages 

Datasheet - production data 

**==> picture [207 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3 3<br>2<br>2<br>1<br>1<br>TO-220 TO-247<br>**----- End of picture text -----**<br>


## **Features** 

|**Order code**<br>~~OC~~|**V DS**|**RDS(on) max**|**ID**|
|---|---|---|---|
|STP27N60M2-EP<br>~~OC~~|600 V|0.163 Ω|20 A|
|STW27N60M2-EP<br>~~OC~~|600 V|0.163 Ω|20 A|



- Extremely low gate charge 

- Excellent output capacitance (COSS) profile 

- Very low turn-off switching losses 

- 100% avalanche tested 

- Zener-protected 

**Figure 1: Internal schematic diagram** 

## **Applications** 

- Switching applications 

- Tailored for very high frequency converters (f > 150 kHz) 

## **Description** 

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and an improved vertical structure, these devices exhibit low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. 

**Table 1: Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STP27N60M2-EP|27N60M2EP|TO-220|Tube|
|STW27N60M2-EP||TO-247||



December 2015 

DocID028723 Rev 1 

1/16 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**<br>**STP27N60M2-EP, STW27N60M2-EP**|**Contents**<br>**STP27N60M2-EP, STW27N60M2-EP**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package information ..................................................................... 10**|
||4.1<br>TO-220 type A package information ................................................ 11|
||4.2<br>TO-247 package information ........................................................... 13|
|**5**|**Revision history ............................................................................ 15**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|20|A|
|ID|Drain current (continuous) at TC= 100 °C|13|A|
|IDM_(1)_|Drain current (pulsed)|80|A|
|PTOT|Total dissipation at TC= 25 °C|170|W|
|dv/dt_(2)_|Peak diode recoveryvoltage slope|15|V/ns|
|dv/dt_(3)_|MOSFET dv/dt ruggedness|50|V/ns|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Operating junction temperature|||



## **Notes:** 

(1)Pulse width limited by safe operating area. 

(2)ISD ≤ 20 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V. 

(3)VDS ≤ 480 V 

**Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**TO-220**|**TO-247**||
|Rthj-case|Thermal resistancejunction-case max|0.74||°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|62.5|50|°C/W|



## **Table 4: Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetetive or not repetetive<br>(pulse width limited byTjmax)|3.6|A|
|EAS|Singlepulse avalanche energy(startingTj= 25 °C, ID= IAR; VDD= 50 V)|260|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

TC = 25 °C unless otherwise specified 

**Table 5: On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 1 mA|600|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 600 V|||1|µA|
|||VGS= 0 V, VDS= 600 V,<br>TC= 125 °C|||100|µA|
|IGSS|Gate-body leakage current|VDS= 0 V, VGS= ±25 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|2|3|4|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 10 A||0.150|0.163|Ω|



**Table 6: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VDS= 100 V, f = 1 MHz,<br>VGS= 0 V|-|1320|-|pF|
|Coss|Output capacitance||-|70|-|pF|
|Crss|Reverse transfer<br>capacitance||-|1|-|pF|
|Coss eq._(1)_|Equivalent output<br>capacitance|VDS= 0 to 480 V, VGS= 0 V|-|146|-|pF|
|RG|Intrinsicgate resistance|f = 1 MHz, ID= 0 A|-|4|-|Ω|
|Qg|Totalgate charge|VDD= 480 V, ID= 20 A,<br>VGS= 10 V (see_Figure 17:_<br>_"Test circuit for gate charge_<br>_behavior"_)|-|33|-|nC|
|Qgs|Gate-source charge||-|5.2|-|nC|
|Qgd|Gate-drain charge||-|16|-|nC|



## **Notes:** 

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

**Table 7: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delaytime|VDD= 300 V, ID= 10 A,<br>RG= 4.7 Ω, VGS= 10 V (see<br>_Figure 16: "Test circuit for_<br>_resistive load switching times"_<br>and_Figure 21: "Switching time_<br>_waveform"_)|-<br>-<br>-<br>-|13.4|-|ns|
|tr|Rise time|||8.1|-|ns|
|td(off)|Turn-off-delaytime|||55.6|-|ns|
|tf|Fall time|||6.3|-|ns|



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**Electrical characteristics** 

||**Table 8: Source-drain diode**|**Table 8: Source-drain diode**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD|Source-drain current||-||20|A|
|ISDM_(1)_|Source-drain current<br>(pulsed)||-||80|A|
|VSD_(2)_|Forward on voltage|VGS= 0 V, ISD= 20 A|-||1.6|V|
|trr|Reverse recoverytime|ISD= 20 A, di/dt = 100 A/µs,<br>VDD= 60 V (see_Figure 21:_<br>_"Switching time waveform"_)|-|271||ns|
|Qrr|Reverse recoverycharge||-|3.44||µC|
|IRRM|Reverse recoverycurrent||-|25.4||A|
|trr|Reverse recoverytime|ISD= 20 A, di/dt = 100 A/µs,<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 21: "Switching time_<br>_waveform"_)|-|352||ns|
|Qrr|Reverse recoverycharge||-|4.82||µC|
|IRRM|Reverse recovery current||-|27.4||A|



## **Notes:** 

(1)Pulse width is limited by safe operating area 

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2: Safe operating area for TO-220** 

**==> picture [176 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 3: Thermal impedance for TO-220<br>**----- End of picture text -----**<br>


**==> picture [153 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
K<br>δ=0.5<br>0.2<br>0.1<br>10 [-1] 0.05<br>0.02<br>Z th = K*R thj-c<br>δ= tp/ Ƭ<br>0.01<br>;<br>Single pulse<br>tp  Ƭ<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tP(s)<br>**----- End of picture text -----**<br>


**Figure 4: Safe operating area for TO-247** 

**Figure 5: Thermal impedance for TO-247** 

**==> picture [350 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6: Output characteristics  Figure 7: Transfer characteristics<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**Figure 8: Gate charge vs gate-source voltage Figure 9: Static drain-source on-resistance** 

**==> picture [161 x 142] intentionally omitted <==**

**==> picture [162 x 142] intentionally omitted <==**

**Figure 10: Capacitance variations** 

**==> picture [159 x 144] intentionally omitted <==**

**Figure 11: Output capacitance stored energy** 

**==> picture [162 x 143] intentionally omitted <==**

**Figure 12: Normalized V(BR)DSS vs Figure 13: Normalized gate threshold voltage temperature vs temperature** 

**==> picture [169 x 142] intentionally omitted <==**

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## **Electrical characteristics** 

**==> picture [398 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14: Normalized on-resistance vs  Figure 15: Source-drain diode forward<br>temperature  characteristics<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**==> picture [416 x 622] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 16: Test circuit for resistive load  Figure 17: Test circuit for gate charge<br>switching times  behavior<br>Figure 18: Test circuit for inductive load  Figure 19: Unclamped inductive load test<br>switching and diode recovery times  circuit<br>Figure 21: Switching time waveform<br>Figure 20: Unclamped inductive waveform<br>DocID028723 Rev 1  9/16<br>**----- End of picture text -----**<br>


**STP27N60M2-EP, STW27N60M2-EP** 

**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

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**Package information** 

## **4.1 TO-220 type A package information** 

**Figure 22: TO-220 type A package outline** 

**==> picture [407 x 570] intentionally omitted <==**

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**Package information STP27N60M2-EP, STW27N60M2-EP** 

**Table 9: TO-220 type A mechanical data** 

|**Dim.**||**mm**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|øP|3.75||3.85|
|Q|2.65||2.95|



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**Package information** 

## **4.2 TO-247 package information** 

**Figure 23: TO-247 package outline** 

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**Package information STP27N60M2-EP, STW27N60M2-EP** 

**Table 10: TO-247 package mechanical data** 

|**Dim.**||**mm.**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|ØP|3.55||3.65|
|ØR|4.50||5.50|
|S|5.30|5.50|5.70|



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**Revision history** 

## **5 Revision history** 

**Table 11: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|15-Dec-2015|1|First release.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2015 STMicroelectronics – All rights reserved 

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