# Power MOSFET, N Channel, 500 V, 30 A, 0.12 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:1468007/)

**URL**: https://novapart.co/products/STW26NM50/power-mosfet-n-channel-500-v-30-a-012-ohm-to-247
**SKU**: STW26NM50
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €5.5200
**Stock**: 500+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STW |
| Qualification | - |
| Power Dissipation | 313W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.12ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1468007/)

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## **STW26NM50** N-channel 500 V, 0.10 Ω, 30 A TO-247 MDmesh™ Power MOSFET 

## **Features** 

|**Type**|**VDSS**|**RDS(on)**<br>**max**|**ID**|
|---|---|---|---|
|STW26NM50|500 V|< 0.12Ω|30 A|



- High dv/dt and avalanche capabilities 

- Improved ESD capability 

- Low input capacitance and gate charge 

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## **Application** 

- Switching applications 

## **Description** 

MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics. 

## **Figure 1. Internal schematic diagram** 

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**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STW26NM50|W26NM50|TO-247|Tube|



October 2009 

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_www.st.com_ 

**Contents** 

**STW26NM50** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VDS|Drain-source voltage (VGS= 0)|500|V|
|VGS|Gate-source voltage|±30|V|
|ID|Drain current (continuous) at TC= 25 °C|30|A|
|ID|Drain current (continuous) at TC= 100 °C|18.9|A|
|IDM (1)|Drain current (pulsed)|120|A|
|PTOT|Total dissipation at TC= 25 °C|313|W|
||Derating factor|2.5|W/°C|
|VESD(G-S)|Gate source ESD (HBM-C=100 pF, R=1.5<br>kΩ)|6000|V|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|Tstg|Storage temperature|-55 to 150|°C|
|Tj|Max. operating junction temperature|150|°C|



1. Pulse width limited by safe operating area 

2. ISD ≤  26 A, di/dt  ≤  200 A/µs, VDD ≤ V(BR)DSS, TJ ≤TJMAX 

## **Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case max|0.4|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|62.5|°C/W|
|Tl|Maximum lead temperature for soldering<br>purpose|300|°C|



## **Table 4. Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by Tj max)|13|A|
|EAS|Single pulse avalanche energy<br>(starting TJ=25 °C, ID=IAR, VDD=50 V)|740|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

## **Table 5. On/off states** 

|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown voltage|ID= 250 µA, VGS= 0|500|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= Max rating<br>VDS= Max rating, TC=125 °C|||10<br>100|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 20 V|||± 10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250 µA|3|4|5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10 V, ID= 13 A||0.10|0.12|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward transconductance|VDS=15 V, ID=13 A|-|20|-|S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>Capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0|-|3000<br>700<br>50|-|pF<br>pF<br>pF|
|Coss eq.<br>(2)|Equivalent output<br>capacitance|VGS= 0, VDS= 0 to 400 V|-|300|-|pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 400 V, ID= 26 A,<br>VGS= 10 V,<br>_(see Figure 15)_|-|76<br>20<br>36|-|nC<br>nC<br>nC|



1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 

## **Table 7. Switching times** 

|**Table 7.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off-delay time<br>Fall time|VDD= 250 V, ID= 13 A,<br>RG= 4.7Ω, VGS=10 V,<br>_(see Figure 15)_|-|28<br>15<br>13<br>19|-|ns<br>ns<br>ns<br>ns|



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**Electrical characteristics** 

## **Table 8. Source drain diode** 

|**Table 8.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max**|**Unit**|
|ISD<br>ISDM (1)|Source-drain current<br>Source-drain current (pulsed)||-||26<br>104|A<br>A|
|VSD (2)|Forward on voltage|ISD= 26 A, VGS= 0|-||1.5|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 26 A, di/dt = 100 A/µs<br>VDD= 100 V<br>_(see Figure 16)_|-|400<br>5.5<br>27.8||ns<br>µC<br>A|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 26 A, di/dt = 100 A/µs<br>VDD= 100 V, Tj= 150 °C<br>_(see Figure 16)_|-|492<br>7<br>28.8||ns<br>µC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

## **Table 9. Gate-source Zener diode** 

|**Table 9.**|**Gate-source Zener diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|BVGSO|Gate-source breakdown<br>voltage|Igs=± 1 mA (open drain)|30|-|-|V|



The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

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**Figure 3. Thermal impedance** 

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## **Figure 4. Output characteristics** 

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## **Figure 5. Transfer characteristics** 

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## **Figure 6. Transconductance** 

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**Figure 7. Static drain-source on resistance** 

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**Electrical characteristics** 

## **Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations** 

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**Figure 10. Normalized gate threshold voltage vs temperature** 

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**Figure 11. Normalized on resistance vs temperature** 

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**Figure 12. Source-drain diode forward characteristics** 

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**Figure 13. Normalized BVDSS vs temperature** 

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BVDSS AM03838v1<br>(norm)<br>1.08<br>ID = 1 mA<br>1.04<br>1.00<br>0.96<br>0.92<br>-75 -50 -25 0 25 50 75 100 125 TJ(°C)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit resistive load** 

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VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>µF µF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. µF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>Figure 16. Test circuit for inductive load  Figure 17. Unclamped inductive load test<br>switching and diode recovery times circuit<br>**----- End of picture text -----**<br>


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L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100µH VD 2200 3.3<br>S B 3.3 1000 µF µF VDD<br>25 Ω B B D µF µF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

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**Package mechanical data** 

## **TO-247 mechanical data** 

|**TO-247 mechanical data**|**TO-247 mechanical data**|**TO-247 mechanical data**|**TO-247 mechanical data**|
|---|---|---|---|
|||||
|||||
|**Dim.**|**mm.**<br>**Min.**<br>**Typ.**<br>**Max.**|||
|||**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e||5.45||
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|øP|3.55||3.65|
|øR|4.50||5.50|
|S||5.50||



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**Revision history** 

## **5 Revision history** 

## **Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|24-Jun-2004|9|New stylesheet.|
|07-Feb-2005|10|IDvalue changed|
|02-Oct-2009|11|Modified: test condition of V(BR)DSSin_Table 5_|



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