# Power MOSFET, N Channel, 800 V, 19.5 A, 0.19 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2807322/)

**URL**: https://novapart.co/products/STW25N80K5/power-mosfet-n-channel-800-v-195-a-019-ohm-to-247
**SKU**: STW25N80K5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.4500
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh K5 |
| Qualification | - |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 800V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 19.5A |
| Drain Source On State Resistance | 0.19ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807322/)

## **STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D[2] PAK, TO-220FP, TO-220 and TO-247 packages 

− **Datasheet production data** 

## **Features** 

**==> picture [188 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>1 2 3<br>D [2] PAK 1<br>TO-220FP<br>TAB A |<br>3<br>2 3<br>1 e 2<br>TO-220 1<br>TO-247<br>**----- End of picture text -----**<br>


**Figure 1. Internal schematic diagram** 

|**Order code**|**VDS@ **<br>**TJmax**|**RDS(on)**<br>**max**|**ID**|**PTOT**|
|---|---|---|---|---|
|STB25N80K5|800 V|< 0.260Ω|19.5 A|250 W|
|STF25N80K5||||40 W|
|STP25N80K5||||250 W|
|STW25N80K5|||||



- Industry’s lowest RDS(on) x area 

- Industry’s best figure of merit (FoM 

- Ultra low gate charge 

- 100% avalanche tested 

- Zener-protected 

## **Applications** 

- Switching applications 

## **Description** 

**==> picture [31 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM01476v1<br>**----- End of picture text -----**<br>


These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 

**Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB25N80K5|25N80K5|D2PAK|Tape and reel|
|STF25N80K5||TO-220FP|Tube|
|STP25N80K5||TO-220||
|STW25N80K5||TO-247||



October 2014 

DocID023466 Rev 3 

1/23 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
||4.1<br>STB25N80K5, D2PAK  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11|
||4.2<br>STF25N80K5, TO-220FP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
||4.3<br>STP25N80K5, TO-220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16|
||4.4<br>STW25N80K5, TO-247  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18|
|**5**|**Packaging information  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22**|



2/23 

DocID023466 Rev 3 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**<br>~~—_—~~|**Parameter**<br>~~—_—~~|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**D2PAK,**<br>**TO-220, TO-247**|**TO-220FP**||
|VGS<br>~~—_—~~|Gate- source voltage<br>~~—_—~~|± 30||V|
|ID<br>~~—_—~~<br>~~a~~|Drain current (continuous) at TC= 25 °C<br>~~—_—~~<br>~~a~~|19.5<br>~~a~~|19.5(1)<br>~~a~~|A<br>~~a~~|
|ID<br>~~a~~|Drain current (continuous) at TC= 100 °C<br>~~a~~|12.3<br>~~a~~|12.3(1)<br>~~a~~|A<br>~~a~~|
|IDM<br>(2)<br>~~a~~|Drain current (pulsed)<br>~~a~~|78<br>~~a~~|78(1)<br>~~a~~|A<br>~~a~~|
|PTOT<br>~~a~~|Total dissipation at TC= 25 °C<br>~~a~~|250<br>~~a~~|40<br>~~a~~|W<br>~~a~~|
|IAR|Max current during repetitive or single<br>pulse avalanche<br>(pulse width limited by Tjmax)|6.5||A|
|EAS|Single pulse avalanche energy<br>(starting TJ= 25 °C, ID=IAS, VDD= 50 V)|200||mJ|
|Viso|Insulation withstand voltage (RMS) from<br>all three leads to external heat sink<br>(t=1 s;TC=25 °C)||2500|V|
|dv/dt(3)<br>~~ee~~|Peak diode recovery voltage slope<br>~~ee~~|6<br>~~ee~~||V/ns|
|Tj<br>Tstg<br>~~ee~~|Operating junction temperature<br>Storage temperature<br>~~ee~~|-55 to 150<br>~~ee~~||°C|



2. Pulse width limited by safe operating area. 

3. ISD ≤ 19.5 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS 

**Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
|||**TO-220 **|**TO-247**|**D2PAK**|**TO-220FP**||
|Rthj-case|Thermal resistance junction-case max|0.5|||3.1|°C/W|
|Rthj-amb|Thermal resistance junction-amb max|62.5|50||62.5||
|Rthj-pcb<br>(1)|Thermal resistance junction-pcb max|||30|||



1. When mounted on 1inch² FR-4 board, 2 oz Cu. 

DocID023466 Rev 3 3/23 ~~Be~~ 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified). 

**Table 4. On/off states** 

|**Symbol**<br>~~ee~~<br>~~a~~|**Parameter**<br>~~ee~~<br>~~es~~|**Test conditions**<br>~~ee~~<br>~~ee~~|**Min.**<br>~~ee~~<br>ee|**Typ.**<br>~~ee~~<br>~~ee~~|**Max.**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~<br>~~ee~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~|Drain-source breakdown<br>voltage (VGS= 0)<br>~~es~~|ID= 1 mA<br>~~ee~~|800<br>ee|~~ee~~|~~ee~~|V<br>~~ee~~|
|IDSS<br>~~ee~~|Zero gate voltage drain<br>current (VGS= 0)<br>~~es~~<br>~~ee~~|VDS= 800 V<br>~~ee~~|~~ee~~|~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
|||VDS= 800 V, Tc=125 °C<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~|50<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~|
|IGSS<br>~~i~~<br>~~a~~|Gate body leakage current<br>(VDS= 0)<br>~~i~~|VGS= ± 20 V<br>~~ee~~<br>~~a~~|~~ee~~|~~ee~~|±10<br>~~ee~~|µA<br>~~ee~~|
|VGS(th)<br>~~a~~<br>~~a~~|Gate threshold voltage<br>~~a~~<br>~~es~~|VDS= VGS, ID= 100 µA<br>~~a~~<br>~~a~~|3<br>~~a~~|4<br>~~a~~|5<br>~~a~~|V<br>~~a~~|
|RDS(on)<br>~~a~~|Static drain-source on<br>resistance<br>~~es~~|VGS= 10 V, ID= 10 A<br>~~a~~||0.19|0.260|Ω|



**Table 5. Dynamic** 

|**Symbol**<br>~~a~~<br>~~——~~|**Parameter**<br>~~ee~~<br>~~——~~|**Test conditions**<br>~~ee eee~~<br>~~_oxARRR:~~|**Min.**<br>~~eee~~<br>~~_oxARRR:~~|**Typ.**<br>~~eee~~<br>~~_oxARRR:~~|**Max.**<br>~~eee~~<br>~~_oxARRR:~~|**Unit**<br>~~eee~~<br>~~_oxARRR:~~|
|---|---|---|---|---|---|---|
|Ciss<br>~~a~~<br>~~|~~<br>~~——~~|Input capacitance<br>~~ee ~~<br>~~|~~<br>~~——~~|VDS=100 V, f=1 MHz, VGS=0<br> ~~ee eee~~<br>~~|~~<br>~~=~~<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|-<br>~~eee~~<br>~~|~~<br>~~=~~<br>~~_oxARRR:~~|1600<br>~~eee~~<br>~~|~~<br>~~=~~<br>~~_oxARRR:~~|-<br>~~eee~~<br>~~|~~<br>~~=~~<br>~~_oxARRR:~~|pF<br>~~eee~~<br>~~|~~<br>~~=~~<br>~~_oxARRR:~~|
|Coss<br>~~>~~<br>~~——~~|Output capacitance<br>~~>~~<br>~~——~~||-<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|130<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|-<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|pF<br>~~>~~<br>~~=~~<br>~~_oxARRR:~~|
|Crss<br>~~——~~|Reverse transfer<br>capacitance<br>~~——~~||-<br>~~_oxARRR:~~|2<br>~~_oxARRR:~~|-<br>~~_oxARRR:~~|pF<br>~~_oxARRR:~~|
|Co(tr)<br>(1)<br>~~——~~<br>~~of~~|Equivalent capacitance time<br>related<br>~~——~~<br>~~ee~~<br>~~of~~|VGS= 0, VDS= 0 to 640 V<br>~~_oxARRR:~~<br>~~ee~~<br>~~an~~|-<br>~~_oxARRR:~~<br>~~ee~~|185<br>~~_oxARRR:~~<br>~~ee~~|-<br>~~_oxARRR:~~<br>~~ee~~|pF<br>~~_oxARRR:~~<br>~~ee~~|
|Co(er)<br>(2)<br>~~of~~|Equivalent capacitance<br>energy related<br>~~ee~~<br>~~of~~||-<br>~~ee~~<br>~~an~~|300<br>~~ee~~<br>~~an~~|-<br>~~ee~~<br>~~an~~|pF<br>~~ee~~<br>~~an~~|
|RG<br>~~a~~|Intrinsic gate resistance<br>~~a~~|f = 1 MHz open drain<br>~~a~~|-<br>~~a~~|4<br>~~a~~|-<br>~~a~~|Ω<br>~~a~~|
|Qg<br>~~——~~<br>~~———~~|Total gate charge<br>~~——~~<br>~~———~~|VDD= 640 V, ID= 19.5 A<br>VGS=10 V<br>_(seeFigure 19)_<br>~~=~~<br>~~=~~|-<br>~~=~~|40<br>~~=~~|-<br>~~=~~|nC<br>~~=~~|
|Qgs<br>~~———~~|Gate-source charge<br>~~———~~||-<br>~~=~~|10<br>~~=~~|~~=~~|nC<br>~~=~~|
|Qgd<br>~~———~~<br>~~TT~~|Gate-drain charge<br>~~———~~<br>~~TT~~||-<br>~~=~~<br>~~=~~|25<br>~~=~~<br>~~=~~|~~=~~<br>~~=~~|nC<br>~~=~~<br>~~=~~|



1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 

4/23 

DocID023466 Rev 3 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Electrical characteristics** 

**Table 6. Switching times** 

||**Table 6. Switching times**|**Table 6. Switching timesg times times**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)|Turn-on delay time|VDD= 400 V, ID= 10 A,<br>RG=4.7Ω, VGS=10 V<br>_(seeFigure 21)_|-|25|-|ns|
|tr|Rise time||-|13|-|ns|
|td(off)|Turn-off delay time||-|60|-|ns|
|tf|Fall time||-|15|-|ns|



tf Fall time - 15 - ns **Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit** ISD Source-drain current - 19.5 A ISDM Source-drain current (pulsed) - 78 A VSD(1) Forward on voltage ISD= 19.5 A, VGS=0 - 1.5 V trr Reverse recovery time ISD= 19.5 A, VDD= 60 V - 515 ns Qrr Reverse recovery charge di/dt = 100 A/µs, - 11 μ C IRRM Reverse recovery current _(see Figure 20)_ - 43.2 A trr Reverse recovery time ISD= 19.5 A,VDD= 60 V - 615 ns Qrr Reverse recovery charge di/dt=100 A/µs, Tj=150 °C - 13 μ C IRRM Reverse recovery current _(see Figure 20)_ - 43 A ~~7=e~~ 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% **Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit** Gate-source breakdown V(BR)GSO voltage IGS= ± 1 mA, ID=0 30 - - V ~~a~~ The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. 

DocID023466 Rev 3 

5/23 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for D[2] PAK** 

**Figure 3. Thermal impedance for D[2] PAK and TO-220** 

**==> picture [200 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15722v1<br>(A)<br>poe AYZAENS ONS<br>a| 1μs<br>PM NTS SL<br>10 10 μs<br>100 μs<br>lm IZLENTT<br>| | ALT TT TENYT TNA 1ms<br>ZACH 10ms<br>1 A LUTTEUT<br>PAL TTT Tc Tj=150 =25°C° C | TTT<br>Single pulse<br>0.1 aie Te NT<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 4. Safe operating area for TO-220FP** 

## **Figure 5. Thermal impedance for TO-220FP** 

**==> picture [203 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15723v1<br>(A)<br>Ell COMME NSETTNAL SSETT<br>10<br>10 μs<br>100 μs<br>ZI [CTS]<br>1 1ms<br>| S|<br>10ms<br>Zn<br>0.1 CHEE EC<br>Tj=150°C<br>0.01 PTa il Tc=25°CSingle pulse ||ii<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figure 6. Safe operating area for TO-220** 

## **Figure 7. Normalized BVDSS vs temperature** 

**==> picture [430 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15724v1 BVDSS AM15733v1<br>(A) (norm)<br>pSPoCn OTN7STENNNINEANTJ 1.051.1 F | | ID=1 mA ff V4 4<br>10 10 μs<br>SeHH A 100 μs 1 rTTr] /<br>=n |<br>||| avery A LI TET TTT 1ms 0.95 P | | | lt |<br>10ms<br>1 NN 4B VA<br>ANNA 4<br>0.9<br>DABPATHE A Tc Tj=150 =25°C° C | 0.85 P| ft ftff<br>Single pulse<br>0.1 0.8<br>0.1 Gielen 1 10 100 VDS(V) -100 PT -50 0 Ee 50 100 TT 150 TJ(°C)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**==> picture [18 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
6/23<br>**----- End of picture text -----**<br>


**==> picture [82 x 8] intentionally omitted <==**

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DocID023466 Rev 3<br>**----- End of picture text -----**<br>


**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Electrical characteristics** 

## **Figure 8. Safe operating area for TO-247** 

**Figure 9. Thermal impedance for TO-247** 

**==> picture [200 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15725v1<br>(A)<br>Seti aaa aa<br>10 10 μs<br>100 μs<br>1ms<br>10ms<br>1<br>Tj=150 ° C<br>Tc=25°C<br>Single pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 10. Output characteristics** 

**==> picture [190 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15726v1<br>ID<br>(A) 11V<br>45 Ff | CE<br>10V<br>40<br>eae 9V<br>35<br>30 | | fo |<br>25 | I|f | |<br>8V<br>20 | Jf ee<br>15<br>7V<br>105 |if fT<br>6V<br>0 Y— fi |<br>0 5 10 15 20 VDS(V)<br>**----- End of picture text -----**<br>


## **Figure 11. Transfer characteristics** 

**==> picture [31 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15727v1<br>**----- End of picture text -----**<br>


**==> picture [189 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID (A)<br>45 Pet ft EE<br>VDS=20V<br>40<br>35 pp SY<br>30 P| | | hf Yl<br>25 P| | | A<br>20 P| | [A | [ |<br>15<br>10 PF | | fy | | |<br>5 P| TY“; | |<br>0 Poteet<br>4 5 6 7 8 9 10 VGS(V)<br>**----- End of picture text -----**<br>


**Figure 12. Static drain-source on-resistance** 

## **Figure 13. Gate charge vs gate-source voltage** 

**==> picture [429 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
RDS(on) AM15734v1 VGS AM15728v1<br>(Ω) VDS<br>(V)<br>(V)<br>0.3 TOO 12 mT VDS 600<br>rEEEEE fff.<br>VGS=10V 10 500<br>0.25 PCEPOCEEELEELEe E CTe 8 ReaAe | / 400<br>0.2<br>P oCE E EDERoC 6 inceTH le 300<br>0.15<br>POPEFCCC 4 ALG 200<br>0.1<br>2 100<br>0.05 noPELE CE |  A 0 fsVe 0<br>0 4 8 12 16 20 24 28 32 36 40 ID(A) 0 10 20 30 40 Qg(nC)<br>**----- End of picture text -----**<br>


DocID023466 Rev 3 7/23 ~~CS7~~ 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Electrical characteristics** 

**==> picture [457 x 395] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14. Capacitance variations Figure 15. Output capacitance stored energy<br>C AM15729v1 Eoss(μJ) AM15730v1<br>(pF)<br>22<br>10000 20 | | | | dT hE | Ay<br>18 | | | dT dT dT | |<br>Ciss 16 P| | | | dT TE TY<br>1000 14 | | | | dE Ty<br>12<br>| | | | dT YI<br>100 10 Fi | dP cdTA<br>Coss 8<br>Fi | dtr TT<br>6 Pi tT [yt]<br>10<br>Crss 4<br>pi tT<br>2<br>Lao~ |et| tT | cEtT rT|<br>1 0<br>Yit ft ty<br>0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 700 800 VDS(V)<br>Bg GZ<br>Figure 16. Normalized on-resistance vs  Figure 17. Source-drain diode forward<br>temperature characteristics<br>RDS(on)(norm) VGS=10V AM15731v1 VSD (V) AM15732v1<br>ID=10A<br>2.5 HH 1<br>TJ=50°C<br>2 pt} 0.9<br>td AL<br>1.5 0.8<br>|i At<br>TJ=25°C<br>1 0.7<br>aan<br>0.5 Evan 0.6 TJ=150°C<br>0 0.5<br>-100 pt -50 [Et] 0 50 100 150 TJ(°C) 0 5 10 15 20 ISD(A)<br>**----- End of picture text -----**<br>


8/23 

DocID023466 Rev 3 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Test circuits** 

## **3 Test circuits** 

**Figure 18. Switching times test circuit for resistive load** 

**Figure 19. Gate charge test circuit** 

**==> picture [442 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [445 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


DocID023466 Rev 3 

9/23 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

10/23 

DocID023466 Rev 3 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Package mechanical data** 

## **4.1 STB25N80K5, D[2] PAK** 

**==> picture [166 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 24. D²PAK (TO-263) drawing<br>**----- End of picture text -----**<br>


**==> picture [30 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_U<br>**----- End of picture text -----**<br>


DocID023466 Rev 3 11/23 ~~57~~ 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Package mechanical data** 

**Table 9. D²PAK (TO-263) mechanical data** 

||**Table 9. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|**Table 9. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|**Table 9. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~a~~<br>~~ee~~|||
||**Min.**<br>~~a~~|**Typ.**<br>~~a~~<br>~~ee~~|**Max.**<br>~~a~~|
|A<br>~~a~~|4.40|~~ee~~|4.60|
|A1<br>~~a~~|0.03||0.23|
|b<br>~~a~~|0.70||0.93|
|b2<br>~~a~~|1.14||1.70|
|c<br>~~a~~|0.45||0.60|
|c2<br>~~a~~<br>~~es~~|1.23||1.36|
|D<br>~~es~~|8.95||9.35|
|D1<br>~~es~~<br>~~a~~|7.50|7.75|8.00|
|D2<br>~~a~~|1.10|1.30|1.50|
|E<br>~~a~~|10||10.40|
|E1<br>~~a~~|8.50|8.70|8.90|
|E2<br>~~a~~<br>~~es~~|6.85|7.05|7.25|
|e<br>~~es~~||2.54||
|e1<br>~~es~~<br>~~a~~|4.88||5.28|
|H<br>~~a~~|15||15.85|
|J1<br>~~a~~|2.49||2.69|
|L<br>~~a~~|2.29||2.79|
|L1<br>~~a~~<br>~~es~~|1.27||1.40|
|L2<br>~~es~~|1.30||1.75|
|R<br>~~es~~<br>~~a~~||0.4||
|V2<br>~~a~~|0°||8°|



12/23 

DocID023466 Rev 3 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Package mechanical data** 

**==> picture [386 x 243] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 25. D²PAK footprint [(a)]<br>16.90<br>12.20 5.08<br>_— 1.60<br>o_ o<br>|<br>Co 3.50<br>9.75<br>Footprint<br>**----- End of picture text -----**<br>


a. All dimension are in millimeters 

DocID023466 Rev 3 

13/23 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Package mechanical data** 

## **4.2 STF25N80K5, TO-220FP** 

**==> picture [138 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 26. TO-220FP drawing<br>**----- End of picture text -----**<br>


**==> picture [53 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


14/23 

DocID023466 Rev 3 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Package mechanical data** 

**Table 10. TO-220FP mechanical data** 

||**Table 10. TO-220FP mechanical data**|**Table 10. TO-220FP mechanical data**|**Table 10. TO-220FP mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.4|~~ee ee~~|4.6<br>~~ee~~|
|B<br>~~a~~|2.5||2.7|
|D<br>~~a~~|2.5||2.75|
|E<br>~~a~~|0.45<br>||0.7<br>|
|F<br>~~Ge~~|0.75<br>~~Ge~~|~~Ge~~|1<br>~~Ge~~|
|F1<br>~~Ge~~|1.15<br>~~Ge~~|~~Ge~~|1.70<br>~~Ge~~|
|F2<br>~~a~~|1.15||1.70|
|G<br>~~a~~|4.95||5.2|
|G1<br>~~a~~|2.4||2.7|
|H<br>~~a~~|10<br>||10.4<br>|
|L2<br>~~Ge~~|~~Ge~~|16<br>~~Ge~~|~~Ge~~|
|L3<br>~~Ge~~|28.6<br>~~Ge~~|~~Ge~~|30.6<br>~~Ge~~|
|L4<br>~~a~~|9.8||10.6|
|L5<br>~~a~~|2.9||3.6|
|L6<br>~~a~~|15.9||16.4|
|L7<br>~~a~~|9||9.3|
|Dia<br>~~a~~|3||3.2|



DocID023466 Rev 3 

15/23 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Package mechanical data** 

## **4.3 STP25N80K5, TO-220** 

**==> picture [159 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 27. TO-220 type A drawing<br>**----- End of picture text -----**<br>


16/23 

DocID023466 Rev 3 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Package mechanical data** 

**Table 11. TO-220 type A mechanical data** 

**mm Dim. Min. Typ. Max.** ~~es~~ A 4.40 4.60 ~~a ee ee~~ b 0.61 0.88 ~~a~~ b1 1.14 1.70 ~~a~~ c 0.48 0.70 ~~a~~ D 15.25 15.75 ~~Ge~~ D1 1.27 ~~Ge~~ E 10 10.40 ~~a~~ e 2.40 2.70 ~~a~~ e1 4.95 5.15 ~~a~~ F 1.23 1.32 ~~a~~ H1 6.20 6.60 ~~Ge~~ J1 2.40 2.72 ~~Ge~~ L 13 14 ~~a~~ L1 3.50 3.93 ~~a~~ L20 16.40 ~~a~~ L30 28.90 ~~a Ge~~ ∅ P 3.75 3.85 Q 2.65 2.95 ~~Ge~~ 

DocID023466 Rev 3 

17/23 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Package mechanical data** 

## **4.4 STW25N80K5, TO-247** 

**==> picture [126 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 28. TO-247 drawing<br>**----- End of picture text -----**<br>


**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_H<br>**----- End of picture text -----**<br>


18/23 

DocID023466 Rev 3 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Package mechanical data** 

**Table 12. TO-247 mechanical data** 

||**Table 12. TO-247 mechanical data**|**Table 12. TO-247 mechanical data**|**Table 12. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~ee~~|||
||**Min.**<br>~~a~~|**Typ.**<br>~~a~~<br>~~ee~~|**Max.**<br>~~a~~|
|A<br>~~a~~|4.85|~~ee~~|5.15|
|A1<br>~~a~~|2.20||2.60|
|b<br>~~a~~|1.0||1.40|
|b1<br>~~a~~|2.0||2.40|
|b2<br>~~a~~|3.0||3.40|
|c<br>~~a~~<br>~~es~~|0.40||0.80|
|D<br>~~es~~|19.85||20.15|
|E<br>~~es~~<br>~~a~~|15.45||15.75|
|e<br>~~a~~|5.30|5.45|5.60|
|L<br>~~a~~|14.20||14.80|
|L1<br>~~a~~|3.70||4.30|
|L2<br>~~a~~<br>~~es~~||18.50||
|∅P<br>~~es~~|3.55||3.65|
|∅R<br>~~es~~<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



DocID023466 Rev 3 

19/23 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Packaging information** 

## **5 Packaging information** 

**==> picture [74 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 29. Tape<br>**----- End of picture text -----**<br>


**==> picture [399 x 317] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T elas ; tape | 7<br>| / CO0V 8GO CO00 G HOO E<br>F<br>K0 W<br>B1 B0 on @]] Oo] @] |e<br>H ) P IGGY<br>a Ld<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 ———_—_—§—_<br>User direction of feed<br>R<br>\a he e[ /* ¢/¢ / % / % F/% F<br>BSeees<br>es es es Se en SsSn Sn |<br>——_—" Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


20/23 DocID023466 Rev 3 ~~eS~~ 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Packaging information** 

**==> picture [366 x 246] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 30. Reel<br>T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>A At slot location<br>B<br>D<br>QO<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>| | tape start 25 mm min.<br>width<br>**----- End of picture text -----**<br>


AM08851v2 

**Table 13. D²PAK (TO-263) tape and reel mechanical data** 

|**Tape**<br>~~ee~~<br>~~ee~~|**Tape**<br>~~ee~~<br>~~ee~~|**Tape**<br>~~ee~~<br>~~ee~~|**Reel**<br>~~ee~~<br>ee~~ee~~|**Reel**<br>~~ee~~<br>ee~~ee~~|**Reel**<br>~~ee~~<br>ee~~ee~~|
|---|---|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>**Min.**<br>**Max.**<br>~~ee ~~<br>~~aes~~||**Dim.**<br> ee<br>~~es~~|**mm**<br>~~ee~~||
||**Min.**<br>~~ee~~<br>~~a~~|||**Min.**<br>~~ee~~|**Max.**<br>~~ee~~|
|A0<br>~~a~~|10.5<br>|10.7<br>~~es~~|A<br>~~es~~||330|
|B0<br>~~a~~|15.7|15.9|B|1.5||
|D<br>~~a~~|1.5|1.6|C|12.8|13.2|
|D1<br>~~a~~|1.59<br>~~ee~~|1.61<br>~~ee~~|D<br>~~ee~~|20.2<br>~~ee~~|~~ee~~|
|E<br>~~a~~|1.65|1.85|G|24.4|26.4|
|F<br>~~a~~|11.4|11.6|N|100||
|K0<br>~~a~~|4.8|5.0|T||30.4|
|P0<br>~~a~~|3.9|4.1||||
|P1<br>~~a~~|11.9|12.1|Base qty||1000|
|P2<br>~~a~~|1.9<br>|2.1<br><br>~~ee~~|Bulk qty||1000|
|R<br>~~ee~~|50<br>~~ee~~|0.35<br>24.3<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~pp~~||||
|T<br>~~ee~~|0.25<br>~~ee~~|||||
|W<br>~~pp~~|23.7<br>~~pp~~|||||



DocID023466 Rev 3 21/23 ~~Se~~ 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

**Revision history** 

## **6 Revision history** 

**Table 14. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|17-Jul-2012|1|First release.|
|04-Jun-2013|2|– Modified: IAR, EAS, dv/dt on_Table 2_, RDS(on)value on_Table 4_,<br>entire values on_Table 5_,_6_and_7_<br>– Updated:_Section 4: Package mechanical data_<br>– Minor text changes<br>– Updated:_Table 11_and_Figure 27_<br>– Document status promoted from preliminary data to<br>production data|
|31-Oct-2014|3|Updated title, description and features in cover page.<br>Updated_Figure 12: Static drain-source on-resistance_.<br>Updated_Section 4.1: STB25N80K5, D2PAK_and_Section 4.4:_<br>_STW25N80K5, TO-247_<br>Minor text change|



22/23 

DocID023466 Rev 3 

**STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5** 

## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

© 2014 STMicroelectronics – All rights reserved 

DocID023466 Rev 3 

23/23 



## Links

- [View this product on Novapart](https://novapart.co/products/STW25N80K5/power-mosfet-n-channel-800-v-195-a-019-ohm-to-247)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stw25n80k5/mosfet-n-ch-800v-19-5a-to-247/dp/2807322)
---

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