# Power MOSFET, N Channel, 600 V, 18 A, 0.168 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2807321/)

**URL**: https://novapart.co/products/STW24N60M2/power-mosfet-n-channel-600-v-18-a-0168-ohm-to-247
**SKU**: STW24N60M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3600
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.168ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh II Plus |
| Qualification | - |
| Power Dissipation | 150W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 0.168ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807321/)

## **STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Q g Power MOSFET in D[2] PAK, I[2] PAK, TO-220 and TO-247 packages − **Datasheet production data Features** TAB TAB 2 **Order codes VDS @ TJmax RDS(on) max ID** 3 1 STB24N60M2 **D[2] PAK** 1[2][3] STI24N60M2 **I[2] PAK** 650 V 0.19 Ω 18 A STP24N60M2 TAB STW24N60M2 • Extremely low gate charge 1 2 3 1 2 3 • Lower RDS(on) x area vs previous generation **TO-220 TO-247** • Low gate input resistance ~~a~~ • 100% avalanche tested **Figure 1. Internal schematic diagram** • Zener-protected D(2, TAB) **Applications** • Switching applications G(1) **Description** These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These g. These . These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to S(3) yield one of the world's lowest on-resistance and AM01476v1 

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These g. These . These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. 

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB24N60M2|24N60M2|D2PAK|Tape and reel|
|STI24N60M2||I2PAK|Tube|
|STP24N60M2||TO-220||
|STW24N60M2||TO-247||



February 2014 

DocID023964 Rev 5 

1/21 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**|**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20**|



2/21 

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**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|18|A|
|ID|Drain current (continuous) at TC= 100 °C|12|A|
|IDM<br>(1)|Drain current (pulsed)|72|A|
|PTOT|Total dissipation at TC= 25 °C|150|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|50|V/ns|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|||



1. Pulse width limited by safe operating area. 

2. ISD ≤ 18 A, di/dt  ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V. 

3. VDS ≤  480 V 

**Table 3. Thermal data Value Symbol Parameter Unit D[2] PAK I[2] PAK TO-220 TO-247** Rthj-case Thermal resistance junction-case max 0.83 °C/W Rthj-pcb Thermal resistance junction-pcb max[(1)] 30 °C/W ~~saa~~ Rthj-amb Thermal resistance junction-ambient max 62.5 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board **Table 4. Avalanche characteristics Symbol Parameter Value Unit** Avalanche current, repetitive or not IAR repetitive (pulse width limited by Tjmax ) 3.5 A Single pulse avalanche energy (starting ~~To~~ EAS Tj=25°C, ID= IAR; VDD=50) 180 mJ 

DocID023964 Rev 5 

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**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5. On /off states** 

|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>V(BR)DSS<br>Drain-source<br>breakdown voltage<br>ID= 1 mA, VGS= 0<br>600<br>V<br>IDSS<br>Zero gate voltage<br>drain current (VGS= 0)<br>VDS= 600 V<br>1<br>μA<br>VDS= 600 V, TC=125 °C<br>100<br>μA<br>IGSS<br>Gate-body leakage<br>current (VDS= 0)<br>VGS= ± 25 V<br>±10<br>μA<br>VGS(th)<br>Gate threshold voltage VDS= VGS, ID= 250 μA<br>2<br>3<br>4<br>V<br>~~ee~~<br>~~eee~~<br>~~eee~~<br>~~a~~<br>~~es~~<br>~~a~~<br>~~7~~<br>~~a~~<br>~~ee~~<br>~~oo~~|
|---|
|RDS(on)<br>Static drain-source<br>on-resistance<br>VGS= 10 V, ID= 9 A<br>0.168<br>0.19<br>Ω<br>~~a~~|
|**Table 6. Dynamic**|
|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>Ciss<br>Input capacitance<br>VDS= 100 V, f = 1 MHz,<br>VGS= 0<br>-<br>1060<br>-<br>pF<br>Coss<br>Output capacitance<br>-<br>55<br>-<br>pF<br>Crss<br>Reverse transfer<br>capacitance<br>-<br>2.2<br>-<br>pF<br>Coss eq.<br>(1)<br>Equivalent output<br>capacitance<br>VDS= 0 to 480 V, VGS= 0<br>-<br>258<br>-<br>pF<br>RG<br>Intrinsic gate<br>resistance<br>f = 1 MHz, ID= 0<br>-<br>7<br>-<br>Ω<br>Qg<br>Total gate charge<br>VDD= 480 V, ID= 18 A,<br>VGS= 10 V<br>(see_Figure 17_)<br>-<br>29<br>-<br>nC<br>Qgs<br>Gate-source charge<br>-<br>6<br>-<br>nC<br>Qgd<br>Gate-drain charge<br>-<br>12<br>-<br>nC<br>~~es~~<br>~~ee ee eee eee~~<br>~~—_————~~<br>~~ee~~<br>~~a~~<br>~~of~~<br>~~et~~<br>~~a~~<br>~~ee~~<br>~~Fs~~<br>~~ee~~<br>~~es~~<br>~~——~~<br>~~—_~~<br>~~a~~<br>~~a~~<br>~~TT~~|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

## **Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 9 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 16_and_21_)|-|14|-|ns|
|tr|Rise time||-|9|-|ns|
|td(off)|Turn-off delay time||-|60|-|ns|
|tf|Fall time||-|15|-|ns|



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**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|ISD<br>~~a~~|Source-drain current||-||18|A|
|ISDM (1)<br>~~a~~<br>~~a~~|Source-drain current (pulsed)<br>~~Ge~~|~~Ge~~|-<br>~~Ge~~|~~Ge~~|72<br>~~Ge~~|A<br>~~Ge~~|
|VSD<br>(2)<br>~~a~~<br>~~a~~<br>~~es~~|Forward on voltage<br>~~Ge~~<br>~~ee~~|ISD= 18 A, VGS= 0<br>~~Ge~~|-<br>~~Ge~~<br>~~|~~|~~Ge~~<br>~~|~~<br>~~|~~|1.6<br>~~Ge~~<br>~~|~~|V<br>~~Ge~~|
|trr<br>~~a~~<br>~~es~~<br>~~ee~~|Reverse recovery time<br>~~ee~~<br>~~ee~~|ISD= 18 A, di/dt = 100 A/μs<br>VDD= 60 V (see_Figure 18_)|-<br>~~|~~<br>~~|~~|332<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~|ns|
|Qrr<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~es~~|Reverse recovery charge<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~|4<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~<br>~~|~~<br>~~||~~|μC<br>~~|~~<br>~~|~~|
|IRRM<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|Reverse recovery current<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~|24<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~<br>~~||~~<br>~~|~~<br>~~||~~|A<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|trr<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~es~~|Reverse recovery time<br>~~ee~~<br>~~ee~~|ISD= 18 A, di/dt = 100 A/μs<br>VDD= 60 V, Tj= 150 °C<br>(see_Figure 18_)|-<br>~~|~~<br>~~|~~|450<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~|~~|~~<br>~~||~~<br>~~|~~<br>~~||~~<br>~~**||**~~|ns<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~|
|Qrr<br>~~es~~<br>~~ee~~<br>~~es~~|Reverse recovery charge<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~|5.5<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~|~~|~~| |~~<br>~~|~~<br>~~||~~<br>~~|~~<br>~~**||**~~<br>~~|~~|μC<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~|~~|
|IRRM<br>~~ee~~<br>~~es~~|Reverse recovery current<br>~~ee~~||-<br>~~|~~|25<br>~~|~~<br>~~**|**~~<br>~~|~~|~~| |~~<br>~~**||**~~<br>~~|~~|A<br>~~|~~<br>~~**|**~~<br>~~|~~|



DocID023964 Rev 5 

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**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for D[2] PAK, I[2] PAK Figure 3. Thermal impedance D[2] PAK, I[2] PAK and and TO-220 TO-220** 

**==> picture [199 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15495v1<br>(A)<br>RS<br>10 co<br>10µs<br>100µs<br>1ms<br>n [CE]<br>1 Tj=150°C<br>Tc=25°C 10ms<br>Single<br>Ve EE pulse LT<br>0.1 CTH Cet uy CE<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


## **Figure 4. Safe operating area for TO-247** 

## **Figure 5. Thermal impedance for TO-247** 

**==> picture [462 x 398] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15461v1<br>(A)<br>Pe YN NEN I<br>10 10µs<br>100µs<br>CS<br>n [7] 1ms<br>1 Tj=150°C<br>Tc=25°C 10ms<br>DARE ll Single all<br>VT TAH pulse mail<br>0.1 4CTH “ll<br>0.1 1 10 100 VDS(V) | |<br>Figure 6. Output characteristics Figure 7. Transfer characteristics<br>AM15470v1 AM15469v1<br>ID ID<br>(A) VGS= 8, 9, 10 V (A)<br>ee COOCCTTEEE<br>VGS= 7 V VDS= 17 V<br>40 40<br>35 fr 35 FEE<br>30 7 WaA 30 PEEPEC AR E E E E<br>25 VGS= 6 V 25<br>20 }Ao 20 PEEPFEE PAPEP EE<br>15 KK 15 PEEP<br>10 V GS = 5 V 10<br>5 rafo 5 CoePEC EPEEE EEE<br>VGS= 4 V<br>0 OO 0 FERCEE EEE<br>0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V)<br>6/21 DocID023964 Rev 5<br>©7 2<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Electrical characteristics** 

**Figure 8. Gate charge vs gate-source voltage** 

**Figure 9. Static drain-source on-resistance** 

**==> picture [426 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS AM15471v1VDS RDS(on)(Ω) AM15465v1<br>(V)<br>12 VDS VDD=480 V (V)600 VGS=10V<br>ID=18 A 0.176<br>10 TOA] 500 foe<br>0.172<br>8 PETy| YI 400 PT TA:<br>6 300<br>nine4n8 0.168 | AL<br>4 200<br>0.164<br>2 P /MACA| tt 100 |  ee4<br>0 ALG 0 0.160 “Ett yy<br>0 5 10 15 20 25 30 Qg(nC) 0 4 8 12 16 ID(A)<br>**----- End of picture text -----**<br>


**Figure 10. Capacitance variations** 

**==> picture [199 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
C AM15665v1<br>eet ee ee ell<br>(pF)<br>eri ciel cre See<br>1000 Ciss<br>100<br>Coss<br>10<br>er Seal ent enti Crss<br>1 BA ea<br>0.1 1 10 100 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 11. Output capacitance stored energy** 

**==> picture [195 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
Eoss AM15472v1<br>(µJ)<br>8<br>| | | | | |<br>7<br>6<br>5<br>4<br>3<br>2<br>1 x<br>0 af<br>0 100 200 300 400 500 600 VDS(V)<br>**----- End of picture text -----**<br>


**Figure 12. Normalized gate threshold voltage vs temperature** 

**==> picture [204 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM15473v1<br>(norm)<br>ID = 250 µA<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>-50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 13. Normalized on-resistance vs temperature** 

**==> picture [203 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
RDS(on) AM15464v1<br>(norm)<br>PT | | TT<br>2.3 | | ID = 9 A |Z<br>2.1 VGS = 10 V<br>1.9<br>1.7 awa<br>1.5 P| | tT | YY<br>1.3<br>1.1 P| oe TA<br>0.9 Pt |e tT<br>0.7 near ee<br>0.5 rT | | | vd] hc] ht<br>-50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


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**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Electrical characteristics** 

**Figure 14. Source-drain diode forward characteristics** 

**Figure 15. Normalized V(BR)DSS vs temperature** 

**==> picture [423 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD AM15468v1 V(BR)DSS AM15466v1<br>(V) (norm)<br>1.4 TILT 1.11 TTT<br>1.09 ID = 1mA<br>1.2 PEERS) T J =-50°C TT TTT<br>1.07<br>1 Saece - | 1.05 EER— 52a<br>0.8 | eT| 1.03 TEPPTET TATyi<br>1.01<br>0.6<br>TJ=150°C<br>TJ=25°C 0.99<br>0.4 boseaneaee PTA<br>0.97<br>0.2 Tote]PLT EEE EL LL | 0.95 GREErTA_L LLL<br>0 PELE EE ELLE 0.93 TY TELL,<br>0 2 4 6 8 10 12 14 16 ISD(A) -50 -25 0 25 50 75 100 TJ(°C)<br>**----- End of picture text -----**<br>


8/21 DocID023964 Rev 5 ~~> 72~~ 

**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Test circuits** 

## **3 Test circuits** 

**Figure 16. Switching times test circuit for resistive load** 

**Figure 17. Gate charge test circuit** 

**==> picture [452 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>JL RG D.U.T. 2200μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [445 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform<br>ton toff<br>tdon tr tdoff tf<br>90% 90%<br>10%<br>0 10% VDS<br>90%<br>VGS<br>0 10% AM01473v1<br>**----- End of picture text -----**<br>


DocID023964 Rev 5 

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**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

**Figure 22. D²PAK (TO-263) drawing** 

**==> picture [31 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_T<br>**----- End of picture text -----**<br>


10/21 

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**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Package mechanical data** 

**Table 9. D²PAK (TO-263) mechanical data** 

||**Table 9. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|**Table 9. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|**Table 9. D²PAK (TO-263) mechanical data(TO-263) mechanical dataTO-263) mechanical data) mechanical data mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.40|~~ee ee~~|4.60<br>~~ee~~|
|A1<br>~~a~~|0.03||0.23|
|b<br>~~a~~|0.70||0.93|
|b2<br>~~a~~|1.14<br>||1.70<br>|
|c<br>~~Ge~~|0.45<br>~~Ge~~|~~Ge~~|0.60<br>~~Ge~~|
|c2<br>~~Ge~~|1.23<br>~~Ge~~|~~Ge~~|1.36<br>~~Ge~~|
|D<br>~~a~~|8.95||9.35|
|D1<br>~~a~~|7.50|||
|E<br>~~a~~|10||10.40|
|E1<br>~~a~~|8.50<br>|||
|e<br>~~Ge~~|~~Ge~~|2.54<br>~~Ge~~|~~Ge~~|
|e1<br>~~Ge~~|4.88<br>~~Ge~~|~~Ge~~|5.28<br>~~Ge~~|
|H<br>~~a~~|15||15.85|
|J1<br>~~a~~|2.49||2.69|
|L<br>~~a~~|2.29||2.79|
|L1<br>~~a~~|1.27<br>||1.40<br>|
|L2<br>~~Ge~~|1.30<br>~~Ge~~|~~Ge~~|1.75<br>~~Ge~~|
|R<br>~~Ge~~|~~Ge~~|0.4<br>~~Ge~~|~~Ge~~|
|V2<br>~~a~~|0°||8°|



DocID023964 Rev 5 

11/21 

**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Package mechanical data** 

**==> picture [386 x 243] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 23. D²PAK footprint [(a)]<br>16.90<br>12.20 5.08<br>ee 1.60 |<br>c t<br>|<br>3.50<br>9.75<br>Footprint<br>**----- End of picture text -----**<br>


## **Figure 24. I²PAK (TO-262) drawing** 

**==> picture [46 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0004982_Rev_H<br>**----- End of picture text -----**<br>


**==> picture [126 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
a. All dimension are in millimeters<br>**----- End of picture text -----**<br>


12/21 

DocID023964 Rev 5 

**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Package mechanical data** 

**Table 10. I²PAK (TO-262) mechanical data** 

||**Table 10. I²PAK (TO-262) mechanical data(TO-262) mechanical dataTO-262) mechanical data) mechanical data mechanical data**|**Table 10. I²PAK (TO-262) mechanical data(TO-262) mechanical dataTO-262) mechanical data) mechanical data mechanical data**|**Table 10. I²PAK (TO-262) mechanical data(TO-262) mechanical dataTO-262) mechanical data) mechanical data mechanical data**|
|---|---|---|---|
|**DIM.**<br>~~a~~|**mm.**<br>~~ee~~<br>~~ee~~|||
||**min.**<br>~~es~~|**typ**<br>~~es~~<br>~~ee~~|**max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.40|~~ee~~|4.60<br>~~ee~~|
|A1<br>~~a~~|2.40||2.72|
|b<br>~~a~~|0.61||0.88|
|b1<br>~~a~~|1.14||1.70|
|c<br>~~a~~|0.49||0.70|
|c2<br>~~a~~|1.23||1.32|
|D<br>~~a~~|8.95||9.35|
|e<br>~~a~~|2.40||2.70|
|e1<br>~~a~~|4.95||5.15|
|E<br>~~a~~|10||10.40|
|L<br>~~a~~|13||14|
|L1<br>~~a~~|3.50||3.93|
|L2<br>~~a~~|1.27||1.40|



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**Package mechanical data** 

## **Figure 25. TO-220 type A drawing** 

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**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Package mechanical data** 

**Table 11. TO-220 type A mechanical data** 

**mm Dim. Min. Typ. Max.** ~~es~~ A 4.40 4.60 ~~a ee ee~~ b 0.61 0.88 ~~a~~ b1 1.14 1.70 ~~a~~ c 0.48 0.70 ~~a~~ D 15.25 15.75 ~~Ge~~ D1 1.27 ~~Ge~~ E 10 10.40 ~~a~~ e 2.40 2.70 ~~a~~ e1 4.95 5.15 ~~a~~ F 1.23 1.32 ~~a~~ H1 6.20 6.60 ~~Ge~~ J1 2.40 2.72 ~~Ge~~ L 13 14 ~~a~~ L1 3.50 3.93 ~~a~~ L20 16.40 ~~a~~ L30 28.90 ~~a Ge~~ ∅P 3.75 3.85 Q 2.65 2.95 ~~Ge~~ 

DocID023964 Rev 5 

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**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Package mechanical data** 

## **Figure 26. TO-247 drawing** 

**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 12. TO-247 mechanical data** 

||**Table 12. TO-247 mechanical data**|**Table 12. TO-247 mechanical data**|**Table 12. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~ee~~|||
||**Min.**<br>~~a~~|**Typ.**<br>~~a~~<br>~~ee~~|**Max.**<br>~~a~~|
|A<br>~~a~~|4.85|~~ee~~|5.15|
|A1<br>~~a~~|2.20||2.60|
|b<br>~~a~~|1.0||1.40|
|b1<br>~~a~~|2.0||2.40|
|b2<br>~~a~~|3.0||3.40|
|c<br>~~a~~<br>~~es~~|0.40||0.80|
|D<br>~~es~~|19.85||20.15|
|E<br>~~es~~<br>~~a~~|15.45||15.75|
|e<br>~~a~~|5.30|5.45|5.60|
|L<br>~~a~~|14.20||14.80|
|L1<br>~~a~~|3.70||4.30|
|L2<br>~~a~~<br>~~es~~||18.50||
|∅P<br>~~es~~|3.55||3.65|
|∅R<br>~~es~~<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



DocID023964 Rev 5 

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**Packaging mechanical data** 

**==> picture [460 x 385] intentionally omitted <==**

**----- Start of picture text -----**<br>
5  Packaging mechanical data<br>Figure 27. Tape<br>10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>H e | I<br>| / 000 00 000 0 00 E<br>F<br>K0 W<br>B1 B0<br>| H ) PRG<br>‘l Ld<br>For machine ref. only A0 P1 D1<br>including draft and<br>radii concentric around B0 ><br>User direction of feed<br>R<br>\a he e/* ¢, /¢ / % / % F/% F<br>BGs<br>es es es Se en ns Sn Sen 5<br>——_—_p»> Bending radius<br>User direction of feed<br>AM08852v1<br>**----- End of picture text -----**<br>


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**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Packaging mechanical data** 

**==> picture [366 x 246] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 28. Reel<br>T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>A At sl ot location<br>B<br>D<br>QO<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>| | tape start 25 mm min.<br>width<br>**----- End of picture text -----**<br>


AM08851v2 

**Table 13. D²PAK (TO-263) tape and reel mechanical data** 

|**Tape**<br>~~ee~~<br>~~ee~~|**Tape**<br>~~ee~~<br>~~ee~~|**Tape**<br>~~ee~~<br>~~ee~~|**Reel**<br>~~ee~~<br>ee~~ee~~|**Reel**<br>~~ee~~<br>ee~~ee~~|**Reel**<br>~~ee~~<br>ee~~ee~~|
|---|---|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>**Min.**<br>**Max.**<br>~~ee ~~<br>~~aes~~||**Dim.**<br> ee<br>~~es~~|**mm**<br>~~ee~~||
||**Min.**<br>~~ee~~<br>~~a~~|||**Min.**<br>~~ee~~|**Max.**<br>~~ee~~|
|A0<br>~~a~~|10.5<br>|10.7<br>~~es~~|A<br>~~es~~||330|
|B0<br>~~a~~|15.7|15.9|B|1.5||
|D<br>~~a~~|1.5|1.6|C|12.8|13.2|
|D1<br>~~a~~|1.59<br>~~ee~~|1.61<br>~~ee~~|D<br>~~ee~~|20.2<br>~~ee~~|~~ee~~|
|E<br>~~a~~|1.65|1.85|G|24.4|26.4|
|F<br>~~a~~|11.4|11.6|N|100||
|K0<br>~~a~~|4.8|5.0|T||30.4|
|P0<br>~~a~~|3.9|4.1||||
|P1<br>~~a~~|11.9|12.1|Base qty||1000|
|P2<br>~~a~~|1.9<br>|2.1<br><br>~~ee~~|Bulk qty||1000|
|R<br>~~ee~~|50<br>~~ee~~|0.35<br>24.3<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~pp~~||||
|T<br>~~ee~~|0.25<br>~~ee~~|||||
|W<br>~~pp~~|23.7<br>~~pp~~|||||



DocID023964 Rev 5 19/21 ~~Se~~ 

**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

**Revision history** 

## **6 Revision history** 

**Table 14. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|10-Dec-2012|1|First release.|
|20-Dec-2012|2|Added MOSFET dv/dt ruggedness in_Table 2: Absolute maximum_<br>_ratings_.|
|14-Jan-2013|3|Modified:_Figure 16_,_17_,_18_and_17_|
|28-May-2013|4|– Minor text changes<br>– Updated:_Table 7_<br>– Updated:_Table 11_and_Figure 25_|
|28-Feb-2014|5|– Minor text changes<br>– Modified: title of_Figure 15_.<br>– Modified:_Figure 16_,_17_,_18_and_19_|



20/21 

DocID023964 Rev 5 

**STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2** 

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## Links

- [View this product on Novapart](https://novapart.co/products/STW24N60M2/power-mosfet-n-channel-600-v-18-a-0168-ohm-to-247)
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---

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