# Power MOSFET, N Channel, 600 V, 20 A, 0.26 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2098379/)

**URL**: https://novapart.co/products/STW20NM60FD/power-mosfet-n-channel-600-v-20-a-026-ohm-to-247
**SKU**: STW20NM60FD
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.2100
**Stock**: 100+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.26ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 214W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 20A |
| Drain Source On State Resistance | 0.26ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2098379/)

**==> picture [61 x 39] intentionally omitted <==**

## **STF20NM60D - STP20NM60FD STW20NM60FD** 

N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh™ Power MOSFET (with fast diode) 

## **General features** 

|**Type**|**VDSS**|**RDS(on)**|**ID**|**Pw**|
|---|---|---|---|---|
|STF20NM60D|600V|<0.29Ω|20A|192W|
|STP20NM60FD|600V|<0.29Ω|20A|45W|
|STW20NM60FD|600V|<0.29Ω|20A|214W|



- High dv/dt and avalanche capabilities 

- 100% Avalanche tested 

- Low input capacitance and gate charge 

- Low gate input resistancE 

**==> picture [198 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>1<br>TO-247 TO-220FP<br>3<br>2<br>1<br>TO-220<br>**----- End of picture text -----**<br>


- Tight process control and high manufacturing yields 

## **Internal schematic diagram** 

## **Description** 

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. 

## **Applications** 

- Switching application 

**==> picture [78 x 114] intentionally omitted <==**

## **Order codes** 

|**Order codes**||||
|---|---|---|---|
|**Part number**|**Marking**|**Package**|**Packaging**|
|STF20NM60D|F20NM60D|TO-220FP|Tube|
|STP20NM60FD|P20NM60FD|TO-220|Tube|
|STW20NM60FD|W20NM60FD|TO-247|Tube|



1/15 

August 2006 

Rev 4 

_www.st.com_ 

|**Contents**|**STF20NM60D - STP20NM60FD - STW20NM60FD**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)         . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuit   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14**|



2/15 

**STF20NM60D - STP20NM60FD - STW20NM60FD** 

**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 1. Absolute maximum ratings** 

|**Table 1.**|**Absolute maximum ratings**|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|||**Unit**|
|||**TO-220**|**TO-220FP**|**TO-247**||
|VDS|Drain-source voltage (VGS= 0)|600|||V|
|VDGR|Drain-gate voltage (RGS= 20 kΩ)|600|||V|
|VGS|Gate- source voltage|± 30|||V|
|ID|Drain current (continuous) at TC= 25°C|20|20(1)|20|A|
|ID|Drain current (continuous) at TC= 100°C|12.6|12.6(1)|12.6|A|
|IDM<br>(2)|Drain current (pulsed)|80|80(1)|80|A|
|PTOT|Total dissipation at TC= 25°C|192|45|214|W|
||Derating factor|1.20|0.36|1.42|W/°C|
|dv/dt(3)|Peak diode recovery voltage slope|20|||V/ns|
|VISO|Insulation withstand voltage (DC)|-|2500|-|V|
|Tj<br>Tstg|Operating junction temperature<br>Storage temperature|– 65 to 150|||°C<br>°C|



1. Limited only by maximum temperature allowed 

2. Pulse width limited by safe operating area 

3. ISD < 20A, di/dt < 400A/µs, VDD = 80%V(BR)DSS 

## **Table 2. Thermal resistance** 

|**Table 2.**|**Thermal resistance**|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|||**Unit**|
|||**TO-220**|**TO-220FP**|**TO-247**||
|Rthj-case|Thermal resistance junction-case Max|0.65|2.8|0.585|°C/W|
|Rthj-amb|Thermal resistance junction-ambient Max|62.5||30|°C/W|
|Tl|Maximum lead temperature for soldering<br>purpose|300|||°C|



## **Table 3. Avalanche data** 

|**Table 3.**|**Avalanche data**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|IAR|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by Tjmax)|10|A|
|EAS|Single pulse avalanche energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 35 V)|700|mJ|



3/15 

**STF20NM60D - STP20NM60FD - STW20NM60FD** 

**Electrical characteristics** 

## **2 Electrical characteristics** 

## (TCASE=25°C unless otherwise specified) 

## **Table 4. On/off states** 

|**Table 4.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ**|**Max**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 250µA, VGS= 0|600|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= Max rating<br>VDS= Max rating, TC= 125 °C|||1<br>10|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ±30V|||±10<br>0|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 250µA|3|4|5|V|
|RDS(on)|Static drain-source on<br>resistance|VGS= 10V, ID= 10A||0.26|0.29|Ω|



**Table 5. Dynamic** 

|**Table 5.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ**|**Max**|**Unit**|
|gfs<br>(1)|Forward transconductance|VDS> ID(on)x RDS(on)max,<br>ID= 10A||9||S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer capacitance|VDS= 25V, f = 1 MHz, VGS= 0||1300<br>500<br>35||pF<br>pF<br>pF|
|Coss eq.<br>(2)|Equivalent output capacitance|VGS= 0V, VDS= 0V to 480V||190||pF|
|RG|Gate input resistance|f=1 MHz Gate DC Bias = 0<br>Test signal level = 20mV<br>open drain||2.7||Ω|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 480V, ID= 20A,<br>VGS= 10V<br>_(see Figure 17)_||37<br>10<br>17|52|nC<br>nC<br>nC|



1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% 

4/15 

**STF20NM60D - STP20NM60FD - STW20NM60FD** 

**Electrical characteristics** 

## **Table 6. Switching times** 

|**Table 6.**|**Switching times**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(on)<br>tr|Turn-on delay time<br>Rise time|VDD= 300V, ID= 10A<br>RG= 4.7ΩVGS= 10V<br>_(see Figure 16)_||25<br>12||ns<br>ns|
|tr(Voff)<br>tf<br>tc|Off-voltage rise time<br>Fall time<br>Cross-over time|VDD= 480 V, ID= 20A,<br>RG= 4.7Ω,VGS= 10V<br>_(see Figure 16)_||8<br>22<br>30||ns<br>ns<br>ns|



**Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max**|**Unit**|
|ISD<br>ISDM (1)|Source-drain current<br>Source-drain current (pulsed)||||20<br>80|A<br>A|
|VSD (2)|Forward on voltage|ISD= 20 A, VGS= 0|||1.5|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 20 A, Tj= 25°C<br>di/dt =100A/µs,VDD=60V<br>_(see Figure 21)_||240<br>1800<br>16||ns<br>nC<br>A|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 20 A, Tj= 150°C<br>di/dt =100A/µs,VDD=60V<br>_(see Figure 21)_||396<br>2960<br>20||ns<br>nC<br>A|



1. Pulse width limited by safe operating area 

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 

5/15 

**STF20NM60D - STP20NM60FD - STW20NM60FD** 

**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 1. Safe operating area for TO-220** 

**Figure 2. Thermal impedance for TO-220** 

**==> picture [155 x 152] intentionally omitted <==**

**==> picture [157 x 153] intentionally omitted <==**

**Figure 3. Safe operating areafor TO-220FP** 

**Figure 4. Thermal impedance for TO-220FP** 

**==> picture [155 x 152] intentionally omitted <==**

**==> picture [157 x 152] intentionally omitted <==**

**Figure 5. Safe operating area for TO-247** 

**Figure 6. Thermal impedance for TO-247** 

**==> picture [155 x 152] intentionally omitted <==**

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6/15 

**STF20NM60D - STP20NM60FD - STW20NM60FD** 

**Electrical characteristics** 

## **Figure 7. Output characterisics** 

**==> picture [156 x 153] intentionally omitted <==**

**Figure 9. Transconductance** 

**==> picture [156 x 149] intentionally omitted <==**

**Figure 11. Gate charge vs gate-source voltage** 

**==> picture [164 x 152] intentionally omitted <==**

## **Figure 8. Transfer characteristics** 

**==> picture [155 x 153] intentionally omitted <==**

**Figure 10. Static drain-source on resistance** 

**==> picture [164 x 151] intentionally omitted <==**

**Figure 12. Capacitance variations** 

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7/15 

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**Electrical characteristics** 

**Figure 13. Normalized gate threshold voltage vs temperature** 

**==> picture [164 x 149] intentionally omitted <==**

**Figure 14. Normalized on resistance vs temperature** 

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**Figure 15. Source-drain diode forward characteristics** 

**==> picture [164 x 155] intentionally omitted <==**

8/15 

**STF20NM60D - STP20NM60FD - STW20NM60FD** 

**Test circuit** 

## **3 Test circuit** 

**Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit resistive load** 

**==> picture [450 x 146] intentionally omitted <==**

**Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit** 

**==> picture [445 x 137] intentionally omitted <==**

**Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform** 

**==> picture [164 x 134] intentionally omitted <==**

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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : _www.st.com_ 

10/15 

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**Package mechanical data** 

||||||||||||**inch**<br>**TYP.**<br>**MAX.**<br>0.181<br>0.034<br>0.066<br>0.027<br>0.620<br>0.409<br>0.106<br>0.202<br>0.052<br>0.256<br>0.107<br>0.551<br>0.154<br>0.645<br>1.137<br>0.151<br>0.116|**inch**<br>**TYP.**<br>**MAX.**<br>0.181<br>0.034<br>0.066<br>0.027<br>0.620<br>0.409<br>0.106<br>0.202<br>0.052<br>0.256<br>0.107<br>0.551<br>0.154<br>0.645<br>1.137<br>0.151<br>0.116|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||**T**|**O-220**|**MECHANICAL DATA**|||||||
||||||||||||||
||||||||||||||
||**DIM.**||||**mm.**||||||**inch**||
|||**MIN.**|||**TYP**|**MAX.**||**MIN.**|||**TYP.**|**MAX.**|
||A|4.40||||4.60||0.173||||0.181|
||b|0.61||||0.88||0.024||||0.034|
||b1|1.15||||1.70||0.045||||0.066|
||c|0.49||||0.70||0.019||||0.027|
||D|15.25||||15.75||0.60||||0.620|
||E|10||||10.40||0.393||||0.409|
||e|2.40||||2.70||0.094||||0.106|
||e1|4.95||||5.15||0.194||||0.202|
||F|1.23||||1.32||0.048||||0.052|
||H1|6.20||||6.60||0.244||||0.256|
||J1|2.40||||2.72||0.094||||0.107|
||L|13||||14||0.511||||0.551|
||L1|3.50||||3.93||0.137||||0.154|
||L20||||16.40||||||0.645||
||L30||||28.90||||||1.137||
||øP|3.75||||3.85||0.147||||0.151|
||Q|2.65||||2.95||0.104||||0.116|
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11/15 

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**Package mechanical data** 

**==> picture [405 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-247 MECHANICAL DATA<br>mm. inch<br>DIM.<br>MIN. TYP MAX. MIN. TYP. MAX.<br>A 4.85 5.15 0.19 0.20<br>A1 2.20 2.60 0.086 0.102<br>b 1.0 1.40 0.039 0.055<br>b1 2.0 2.40 0.079 0.094<br>b2 3.0 3.40 0.118 0.134<br>c 0.40 0.80 0.015 0.03<br>D 19.85 20.15 0.781 0.793<br>E 15.45 15.75 0.608 0.620<br>e 5.45 0.214<br>L 14.20 14.80 0.560 0.582<br>L1 3.70 4.30 0.14 0.17<br>L2 18.50 0.728<br>øP 3.55 3.65 0.140 0.143<br>øR 4.50 5.50 0.177 0.216<br>S 5.50 0.216<br>**----- End of picture text -----**<br>


12/15 

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**Package mechanical data** 

**==> picture [405 x 596] intentionally omitted <==**

**----- Start of picture text -----**<br>
TO-220FP MECHANICAL DATA<br>mm. inch<br>DIM.<br>MIN. TYP MAX. MIN. TYP. MAX.<br>A 4.4 4.6 0.173 0.181<br>B 2.5 2.7 0.098 0.106<br>D 2.5 2.75 0.098 0.108<br>E 0.45 0.7 0.017 0.027<br>F 0.75 1 0.030 0.039<br>F1 1.15 1.7 0.045 0.067<br>F2 1.15 1.7 0.045 0.067<br>G 4.95 5.2 0.195 0.204<br>G1 2.4 2.7 0.094 0.106<br>H 10 10.4 0.393 0.409<br>L2 16 0.630<br>L3 28.6 30.6 1.126 1.204<br>L4 9.8 10.6 .0385 0.417<br>L5 2.9 3.6 0.114 0.141<br>L6 15.9 16.4 0.626 0.645<br>L7 9 9.3 0.354 0.366<br>Ø 3 3.2 0.118 0.126<br>L3<br>L6<br>L7<br>1 2 3<br>L5<br>L2 L4<br>F1 F<br>G<br>F2<br>E<br>A<br>D<br>B<br>G1<br>H<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

## **Table 8. Revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|09-Sep-2004|1|First release|
|21-Apr-2006|2|New template|
|25-Jul-2006|3|Modified part number|
|01-Aug-2006|4|Corrected unit on_Table 5.: Dynamic_|



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**STF20NM60D - STP20NM60FD - STW20NM60FD** 

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15/15 



## Links

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