# Power MOSFET, N Channel, 500 V, 20 A, 0.25 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:9936017/)

**URL**: https://novapart.co/products/STW20NM50FD/power-mosfet-n-channel-500-v-20-a-025-ohm-to-247
**SKU**: STW20NM50FD
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.5600
**Stock**: 200+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 214W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 20A |
| Drain Source On State Resistance | 0.25ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9936017/)

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## **STW20NM50FD** 

## N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh™ Power MOSFET (with FAST DIODE) 

|**TYPE**|**VDSS**|**RDS(on)**|**ID**|
|---|---|---|---|
|STW20NM50FD|500V|<0.25Ω|20 A|



- I TYPICAL RDS(on) = 0.22Ω 

- I HIGH dv/dt AND AVALANCHE CAPABILITIES 

- I 100% AVALANCHE TESTED 

- I LOW INPUT CAPACITANCE AND GATE CHARGE 

- I LOW GATE INPUT RESISTANCE 

- I TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS 

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TO-247<br>**----- End of picture text -----**<br>


## **DESCRIPTION** 

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phaseshift converters. 

## **APPLICATIONS** 

- I ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT 

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I NTERNAL SCHEMATIC DIAGRAM<br>**----- End of picture text -----**<br>


## **ABSOLUTE MAXIMUM RATINGS** 

|**ABSOLUTE**|**MAXIMUM RATINGS**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source Voltage (VGS= 0)|500|V|
|VDGR|Drain-gate Voltage (RGS= 20 kΩ)|500|V|
|VGS|Gate- source Voltage|±30|V|
|ID|Drain Current (continuos) at TC= 25°C|20|A|
|ID|Drain Current (continuos) at TC= 100°C|14|A|
|IDM(G)|Drain Current (pulsed)|80|A|
|PTOT|Total Dissipation at TC= 25°C|214|W|
||Derating Factor|1.42|W/°C|
|dv/dt(1)|Peak Diode Recovery voltage slope|20|V/ns|
|Tstg|Storage Temperature|–65 to 150|°C|
|Tj|Max. Operating Junction Temperature|150|°C|



- (•)Pulse width limited by safe operating area 

- (1)ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. 

- (*)Limited only by maximum temperature allowed 

June 2002 

1/8 

## **STW20NM50FD** 

## **THERMAL DATA** 

|Rthj-case|Thermal Resistance Junction-case                           Max|0.585|0.585|°C/W|
|---|---|---|---|---|
|Rthj-amb<br>Tl|Thermal Resistance Junction-ambient                      Max<br>Maximum Lead Temperature For Soldering Purpose|30<br>300||°C/W<br>°C|
|**AVALANCHE CHARACTERISTICS**|||||
|**Symbol**|**Parameter**||**Max Value**|**Unit**|
|IAR|Avalanche Current, Repetitive or Not-Repetitive<br>(pulse width limited by Tjmax)||10|A|
|EAS|Single Pulse Avalanche Energy<br>(starting Tj= 25 °C, ID= IAR, VDD= 35 V)||700|mJ|



## **ELECTRICAL CHARACTERISTICS** (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF 

|<br>OFF|||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>Breakdown Voltage|ID= 250 µA, VGS= 0|500|||V|
|IDSS|Zero Gate Voltage<br>Drain Current (VGS= 0)|VDS= Max Rating<br>VDS= Max Rating, TC= 125 °C|||1<br>10|µA<br>µA|
|IGSS|Gate-body Leakage<br>Current (VDS= 0)|VGS= ±30V|||±100|nA|
|ON (1)|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 250µA|3|4|5|V|
|RDS(on)|Static Drain-source On<br>Resistance|VGS= 10V, ID= 10A||0.22|0.25|Ω|



## DYNAMIC 

|DYNAMIC|||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs(1)|Forward Transconductance|VDS> ID(on)x RDS(on)max,<br>ID= 10A||9||S|
|Ciss<br>Coss<br>Crss|Input Capacitance<br>Output Capacitance<br>Reverse Transfer<br>Capacitance|VDS= 25V, f = 1 MHz, VGS= 0||1380<br>290<br>40||pF<br>pF<br>pF|
|Coss eq.(2)|Equivalent Output<br>Capacitance|VGS= 0V, VDS= 0V to 400V||130||pF|
|Rg|Gate Input Resistance|f=1 MHz Gate DC Bias=0<br>Test Signal Level=20mV<br>Open Drain||2.8||Ω|



1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 

2/8 

**STW20NM50FD** 

## **ELECTRICAL CHARACTERISTICS** (CONTINUED) SWITCHING ON 

|**Symbol**|**Parameter**|**Test Conditions**<br>**Min.**|**Typ.**<br>**Max.**<br>**Unit**|
|---|---|---|---|
|td(on)<br>tr|Turn-on Delay Time<br>V<br>R<br>(s<br>Rise Time|DD= 250V, ID= 10 A<br>G= 4.7ΩVGS= 10V<br>ee test circuit, Figure 3)|22<br>ns<br>20<br>ns|
|Qg<br>Qgs<br>Qgd|Total Gate Charge<br>V<br>V<br>Gate-Source Charge<br>Gate-Drain Charge|DD= 400V, ID= 20A,<br>GS= 10V|38<br>53<br>nC<br>18<br>nC<br>10<br>nC|



## SWITCHING OFF 

|**Symbol**|**Parameter**|**Test Conditions**<br>**Min.**|**Typ.**<br>**Max.**<br>**Unit**|
|---|---|---|---|
|tr(Voff)<br>tf<br>tc|Off-voltage Rise Time<br>V<br>R<br>(s<br>Fall Time<br>Cross-over Time|DD= 400V, ID= 20 A,<br>G= 4.7Ω,VGS= 10V<br>ee test circuit, Figure 5)|6<br>ns<br>15<br>ns<br>30<br>ns|



## SOURCE DRAIN DIODE 

|**Symbol**|**Parameter**|**Test Conditions**<br>**Min.**|**Typ.**<br>**Max.**<br>**Unit**|
|---|---|---|---|
|ISD<br>ISDM(2)|Source-drain Current<br>Source-drain Current (pulsed)||20<br>A<br>80<br>A|
|VSD(1)|Forward On Voltage<br>IS|D= 20 A, VGS= 0|1.5<br>V|
|trr<br>Qrr<br>IRRM|Reverse Recovery Time<br>IS<br>V<br>(s<br>Reverse Recovery Charge<br>Reverse Recovery Current|D= 20 A, di/dt = 100A/µs,<br>DD= 60V, Tj= 150°C<br>ee test circuit, Figure 5)|245<br>ns<br>2<br>µC<br>16<br>A|



Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 

## **Safe Operating Area** 

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## **Thermal Impedance** 

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**STW20NM50FD** 

**Output Characteristics** 

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**Transconductance** 

**Gate Charge vs Gate-source Voltage** 

## **Transfer Characteristics** 

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**Static Drain-source On Resistance** 

**Capacitance Variations** 

4/8 

**STW20NM50FD** 

## **Normalized Gate Thereshold Voltage vs Temp.** 

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## **Normalized On Resistance vs Temperature** 

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## **Source-drain Diode Forward Characteristics** 

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5/8 

**STW20NM50FD** 

**Fig. 1:** Unclamped Inductive Load Test Circuit 

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**Fig. 3:** Switching Times Test Circuits For Resistive Load 

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**Fig. 2:** Unclamped Inductive Waveform 

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**Fig. 4:** Gate Charge test Circuit 

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**Fig. 5:** Test Circuit For Inductive Load Switching And Diode Recovery Times 

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**STW20NM50FD** 

## **TO-247 MECHANICAL DATA** 

|||**mm.**|||**inch**||
|---|---|---|---|---|---|---|
|**DIM.**|||||||
||**MIN.**|**TYP**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.85||5.15|0.19||0.20|
|D|2.20||2.60|0.08||0.10|
|E|0.40||0.80|0.015||0.03|
|F|1||1.40|0.04||0.05|
|F1||3|||0.11||
|F2||2|||0.07||
|F3|2||2.40|0.07||0.09|
|F4|3||3.40|0.11||0.13|
|G||10.90|||0.43||
|H|15.45||15.75|0.60||0.62|
|L|19.85||20.15|0.78||0.79|
|L1|3.70||4.30|0.14||0.17|
|L2||18.50|||0.72||
|L3|14.20||14.80|0.56||0.58|
|L4||34.60|||1.36||
|L5||5.50|||0.21||
|M|2||3|0.07||0.11|
|V||5º|||5º||
|V2||60º|||60º||
|Dia|3.55||3.65|0.14||0.143|



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**STW20NM50FD** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 

© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 

**http://www.st.com** 

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