# Power MOSFET, N Channel, 500 V, 17 A, 0.23 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:9803890/)

**URL**: https://novapart.co/products/STW20NK50Z/power-mosfet-n-channel-500-v-17-a-023-ohm-to-247
**SKU**: STW20NK50Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.8000
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipatio

## Specifications

| Parameter | Value |
|---|---|
| Svhc | Lead (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | STW |
| Qualification | - |
| Power Dissipation | 190W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 17A |
| Drain Source On State Resistance | 0.23ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9803890/)

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## **STW20NK50Z** 

## N-channel 500 V, 0.23 Ω, 20 A SuperMESH™ Power MOSFET Zener-protected in TO-247 package 

**Datasheet — production data** 

## **Features** 

|**Order code**|**VDSS**|**RDS(on)**<br>**max**|**ID**|**PW**|
|---|---|---|---|---|
|STW20NK50Z|500 V|< 0.27Ω|20 A|190 W|



- Extremely high dv/dt capability 

- 100% avalanche tested 

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3<br>2<br>1<br>TO-247<br>**----- End of picture text -----**<br>


- Gate charge minimized 

- Very low intrinsic capacitance 

## **Application** 

Switching applications 

## **Figure 1. Internal schematic diagram** 

## **Description** 

This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. 

**==> picture [220 x 171] intentionally omitted <==**

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D(2)<br>G(1)<br>S(3)<br>AM01476v1<br>**----- End of picture text -----**<br>


## **Table 1. Device summary** 

|**Order code**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STW20NK50Z|W20NK50Z|TO-247|Tube|



1/12 

April 2012 

Doc ID 023061 Rev 1 

This is information on a product in full production. 

_www.st.com_ 

**Contents** 

**STW20NK50Z** 

|**Contents**|**Contents**|
|---|---|
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)       . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Table 2.**|**Absolute maximum ratings**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VDS|Drain-source voltage|500|V|
|VGS|Gate-source voltage|± 30|V|
|ID|Drain current (continuous) at TC= 25 °C|20|A|
|ID|Drain current (continuous) at TC= 100 °C|12.6|A|
|IDM<br>(1)|Drain current (pulsed)|68|A|
|PTOT|Total dissipation at TC= 25 °C|190|W|
||Derating factor|1.52|W/°C|
|ESD|Gate-source human body model<br>(R=1.5 kΩ, C=100 pF)|6|kV|
|dv/dt<br>(2)|Peak diode recovery voltage slope|4.5|V/ns|
|Tstg|Storage temperature|-55 to 150|°C|
|Tj|Max operating junction temperature|150|°C|



1. Pulse width limited by safe operating area. 

2. ISD ≤ 17 A, di/dt   ≤   200 A/µs, VDS peak ≤   V(BR)DSS, VDD ≤   V(BR)DSS, Tj ≤  TJMAX. 

## **Table 3. Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistance junction-case max|0.66|°C/W|
|Rthj-amb|Thermal resistance junction-ambient max|50|°C/W|



## **Table 4. Avalanche characteristics** 

|**Table 4.**|**Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|IAR|Avalanche current, repetitive or not-<br>repetitive (pulse width limited by Tj Max)|17|A|
|EAS|Single pulse avalanche energy<br>(starting TJ=25 °C, ID=IAR, VDD=50 V)|850|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

## **Table 5. On/off states** 

|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source<br>breakdown  voltage|ID=1 mA, VGS= 0|500|||V|
|IDSS|Zero gate voltage<br>drain current (VGS= 0)|VDS= 500 V<br>VDS= 500 V, TC= 125 °C|||1<br>50|µA<br>µA|
|IGSS|Gate-body leakage<br>current (VDS= 0)|VGS= ± 20 V|||± 10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100 µA|3|3.75|4.5|V|
|RDS(on)|Static drain-source<br>on-resistance|VGS= 10 V, ID= 8.5 A||0.23|0.27|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer capacitance|VDS= 25 V, f = 1 MHz,<br>VGS= 0|-|2600<br>328<br>72||pF<br>pF<br>pF|
|Coss eq.<br>(1)|Equivalent output<br>capacitance|VDS=0, VDS= 0 to 640 V|-|187||pF|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|VDD= 250 V, ID= 8.5 A,<br>RG= 4.7Ω,VGS= 10 V<br>(see_Figure 14_)|-|28<br>20<br>70<br>15||ns<br>ns<br>ns<br>ns|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD= 400 V, ID= 17 A,<br>VGS= 10 V<br>(see_Figure 15_)|-|85<br>15.5<br>42|119|nC<br>nC<br>nC|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 

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**Electrical characteristics** 

**Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM<br>(1)|Source-drain current<br>Source-drain current (pulsed)||-||20<br>68|A<br>A|
|VSD<br>(2)|Forward on voltage|ISD= 17 A, VGS= 0|-||1.6|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 17 A,<br>di/dt = 100 A/µs<br>VR= 100 V<br>(see_Figure 16_)|-|355<br>3.90<br>22||ns<br>µC<br>A|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD= 17 A,<br>di/dt = 100 A/µs<br>VR= 100 V, Tj = 150 °C<br>(see_Figure 16_)|-|440<br>5.72<br>26||ns<br>µC<br>A|



1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 

2. Pulse width limited by safe operating area. 

|**Table 8.**<br>**Gate-source Zener diode**|**Table 8.**<br>**Gate-source Zener diode**|**Table 8.**<br>**Gate-source Zener diode**|**Table 8.**<br>**Gate-source Zener diode**|**Table 8.**<br>**Gate-source Zener diode**|**Table 8.**<br>**Gate-source Zener diode**|**Table 8.**<br>**Gate-source Zener diode**|
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|BVGSO|Gate-source breakdown voltage|Igs=± 1mA (open drain)|30|-||V|



The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area** 

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**Figure 3. Thermal impedance** 

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## **Figure 4. Output characteristics** 

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## **Figure 5. Transfer characteristics** 

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## **Figure 6. Normalized BVDSS vs temperature** 

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**Figure 7. Static drain-source on-resistance** 

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**Electrical characteristics** 

## **Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations** 

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## **Figure 10. Normalized gate threshold voltage vs temperature** 

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## **Figure 11. Normalized on-resistance vs temperature** 

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## **Figure 12. Maximum avalanche energy vs temperature** 

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**Figure 13. Source-drain diode forward characteristic** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit resistive load** 

**==> picture [462 x 195] intentionally omitted <==**

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VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>Figure 16. Test circuit for inductive load  Figure 17. Unclamped inductive load test<br>switching and diode recovery times circuit<br>**----- End of picture text -----**<br>


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L<br>A A A<br>D<br>G D.U.T. FASTDIODE L=100μH VD 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 18.  Unclamped inductive waveform Figure 19. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

**Table 9. TO-247 mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e||5.45||
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S||5.50||



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**Package mechanical data** 

## **Figure 20. TO-247 drawing** 

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0075325_F<br>**----- End of picture text -----**<br>


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**Revision history** 

## **5 Revision history** 

**Table 10. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|05-Apr-2012|1|First release.|



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