# Power MOSFET, N Channel, 950 V, 12 A, 0.41 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2807318/)

**URL**: https://novapart.co/products/STW15N95K5/power-mosfet-n-channel-950-v-12-a-041-ohm-to-247
**SKU**: STW15N95K5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.9000
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:950V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | SuperMESH 5 |
| Qualification | - |
| Power Dissipation | 170W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 950V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 12A |
| Drain Source On State Resistance | 0.41ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807318/)

**Datasheet** - **production data** 

**STF15N95K5, STP15N95K5, STW15N95K5** N-channel 950 V, 0.41 Ω typ., 12 A SuperMESH™ 5 Power MOSFETs in TO-220FP, TO-220 and TO-247 packages **Datasheet** - **production data Features Order codes VDS RDS(on)max ID PTOT** STF15N95K5 30 W 3 1 2 STP15N95K5 950 V 0.5 Ω 12 A 170 W **TO-220FP** STW15N95K5 TAB • TO-220 worldwide best R DS(on) • Worldwide best FOM (figure of merit) 3 • Ultra low gate charge 2 3 oe 1 1 2 ~~!”~~ • 100% avalanche tested **TO-220 TO-247** • Zener-protected **Figure 1. Internal schematic diagram** 

## **Applications** 

**==> picture [173 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2,TAB)<br>G(1)<br>S(3)<br>AM01476v1<br>**----- End of picture text -----**<br>


- Switching applications 

## **Description** 

These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. 

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STF15N95K5|15N95K5|TO-220FP|Tube|
|STP15N95K5|15N95K5|TO-220||
|STW15N95K5|15N95K5|TO-247||



February 2014 

DocID025280 Rev 2 

1/18 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**|**STF15N95K5, STP15N95K5, STW15N95K5**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17**|



2/18 

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**STF15N95K5, STP15N95K5, STW15N95K5** 

**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**TO-220**<br>**TO-247**|**TO-220FP**||
|VGS<br>~~a~~|Gate- source voltage|± 30||V|
|ID<br>~~a~~|Drain current (continuous) at TC= 25 °C|12|12(1)|A|
|ID<br>~~a~~|Drain current (continuous) at TC= 100 °C|7.6|7.6(1)|A|
|IDM<br>(2)<br>~~a~~|Drain current (pulsed)|48|48(1)|A|
|PTOT<br>~~a~~|Total dissipation at TC= 25 °C|170|30|W|
|IAR|Max current during repetitive or single<br>pulse avalanche<br>(pulse width limited by Tjmax)|4||A|
|EAS|Single pulse avalanche energy<br>(starting TJ= 25 °C, ID=IAS, VDD= 50 V)|124||mJ|
|ESD|Gate-source human body model<br>(R= 1,5 kΩ, C = 100 pF)|2||kV|
|VISO|Insulation withstand voltage (RMS) from<br>all three leads to external heat sink<br>(t=1 s;TC=25 °C)||2500|V|
|dv/dt(3)<br>~~a~~|Peak diode recovery voltage slope|4.5||V/ns|
|dv/dt(4)<br>~~a~~|MOSFET dv/dt ruggedness|50||V/ns|
|Tj<br>Tstg|Operating junction temperature<br>Storage temperature|-55 to 150||°C|



1. Limited by maximum junction temperature. 

2. Pulse width limited by safe operating area. 

3. ISD ≤  12, di/dt   ≤  100 A/μs, VDS(peak) ≤ V(BR)DSS 

4. VDS ≤   760 V 

## **Table 3. Thermal data** 

||**Table 3. Thermal data**|**Table 3. Thermal data**|**Table 3. Thermal data**|**Table 3. Thermal data**||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|||**Unit**|
|||**TO-220**|**TO-247**|**TO-220FP**||
|Rthj-case|Thermal resistance junction-case max|0.74||4.2|°C/W|
|Rthj-amb|Thermal resistance junction-amb max|62.5|50|62.5|°C/W|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 4. On/off states** 

**Symbol Parameter Test conditions Min. Typ. Max. Unit** ~~ee~~ Drain-source breakdown V(BR)DSS voltage ID = 1 mA, VGS= 0 950 V ~~a eee eee~~ Zero gate voltage drain ~~es~~ VDS = 950 V, 1 μA IDSS current (VGS = 0) VDS = 950 V, Tc=125 °C 50 μA ~~eeee~~ Gate body leakage current IGSS VGS = ± 20 V ±10 μA (VDS = 0) ~~i ee a~~ VGS(th) Gate threshold voltage VDS = VGS, ID = 100 μA 3 4 5 V Static drain-source RDS(on) on-resistance VGS = 10 V, ID= 6 A 0.41 0.50 Ω ~~aes~~ 

**Table 5. Dynamic** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~eee~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~e~~|**Typ.**<br>~~e~~|**Max.**<br>~~e~~|**Unit**<br>~~e~~|
|---|---|---|---|---|---|---|
|Ciss<br>~~a ~~<br>~~>~~<br>~~——~~|Input capacitance<br> ~~eee~~<br>~~>~~<br>~~——~~|VDS=100 V, f=1 MHz, VGS=0<br>~~ee~~<br>~~>~~<br>~~=~~<br>~~>~~<br>~~=~~<br>~~xR:~~|-<br>~~e~~<br>~~>~~<br>~~=~~<br>~~xR:~~|855<br>~~e~~<br>~~>~~<br>~~=~~<br>~~xR:~~|-<br>~~e~~<br>~~>~~<br>~~=~~<br>~~xR:~~|pF<br>~~e~~<br>~~>~~<br>~~=~~<br>~~xR:~~|
|Coss<br>~~>~~<br>~~——~~|Output capacitance<br>~~>~~<br>~~——~~||-<br>~~>~~<br>~~=~~<br>~~xR:~~|65<br>~~>~~<br>~~=~~<br>~~xR:~~|~~>~~<br>~~=~~<br>~~xR:~~|pF<br>~~>~~<br>~~=~~<br>~~xR:~~|
|Crss<br>~~——~~|Reverse transfer<br>capacitance<br>~~——~~||-<br>~~xR:~~|1<br>~~xR:~~|~~xR:~~|pF<br>~~xR:~~|
|Co(tr)<br>(1)<br>~~of~~|Equivalent capacitance time<br>related<br>~~ee~~<br>~~of~~|VGS= 0, VDS= 0 to 760 V<br>~~ee~~<br>~~Pt~~|-<br>~~ee~~<br>~~Pt~~|104<br>~~ee~~<br>~~Ptty~~|-<br>~~ee~~<br>~~ty~~|pF<br>~~ee~~<br>~~ty~~|
|Co(er)<br>(2)<br>~~of~~|Equivalent capacitance<br>energy related<br>~~ee~~<br>~~of~~||-<br>~~ee~~<br>~~Pt~~|38<br>~~ee~~<br>~~Ptty~~|-<br>~~ee~~<br>~~ty~~|pF<br>~~ee~~<br>~~ty~~|
|RG<br>~~a~~|Intrinsic gate resistance<br>~~a~~|f = 1 MHz open drain<br>~~Pt~~<br>~~a~~|-<br>~~Pt~~<br>~~a~~|6<br>~~Pt ty~~<br>~~a~~|-<br>~~ty~~<br>~~a~~|Ω<br>~~ty~~<br>~~a~~|
|Qg<br>~~—~~|Total gate charge<br>~~—~~|VDD= 760 V, ID= 12 A<br>VGS=10 V<br>_(seeFigure 20)_<br>~~—~~<br>~~—~~<br>~~7~~<br>~~=~~|-<br>~~—~~|30<br>~~—~~|-<br>~~—~~|nC<br>~~—~~|
|Qgs<br>~~—~~|Gate-source charge<br>~~—~~||-<br>~~—~~<br>~~7~~|5<br>~~—~~<br>~~7~~|-<br>~~—~~<br>~~7~~|nC<br>~~—~~<br>~~7~~|
|Qgd<br>~~>~~|Gate-drain charge<br>~~>~~||-<br>~~=~~|22<br>~~=~~|-<br>~~=~~|nC<br>~~=~~|



2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 

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**Electrical characteristics** 

**Table 6. Switching times** 

||**Table 6. Switching times**|**Table 6. Switching timesg times times**|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|td(v)|Voltage delay time|VDD= 475 V, ID= 6 A,<br>RG=4.7Ω, VGS=10 V<br>_(seeFigure 22)_|-|23|-|ns|
|tr(v)|Voltage rise time||-|20|-|ns|
|tf(i)|Current fall time||-|62|-|ns|
|tc(off)|Crossing time||-|11|-|ns|



**Table 7. Source drain diode** 

|~~a~~|~~ee Gs~~|~~Gs~~|||||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>~~ee Gs~~|**Test conditions**<br>~~Gs~~|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM<br>~~a~~<br>~~|~~|Source-drain current<br>Source-drain current (pulsed)<br>~~ee Gs~~<br>~~|__}~~|~~Gs~~<br>~~__}~~<br>~~_{}~~|-<br>~~__}~~<br>~~{}~~|~~__}~~<br>~~{}{|~~|12<br>48<br>~~__}~~<br>~~{|~~|A<br>A<br>~~__}~~<br>~~{|~~|
|VSD<br>(1)<br>~~|~~|Forward on voltage<br>~~|__}~~|ISD= 12 A, VGS=0<br>~~__}~~<br>~~_{}~~|-<br>~~__}~~<br>~~{}~~|~~__}~~<br>~~{}{|~~|1.5<br>~~__}~~<br>~~{|~~|V<br>~~__}~~<br>~~{|~~|
|trr|Reverse recovery time|ISD= 12 A, VDD= 60 V<br>di/dt = 100 A/μs,<br>_(seeFigure 21)_<br>~~_{}~~|-<br>~~{}~~|444<br>~~{} {|~~|~~{|~~|ns<br>~~{|~~|
|Qrr|Reverse recovery charge||-|7||μC|
|IRRM|Reverse recovery current||-|32||A|
|trr<br>~~——~~|Reverse recovery time<br>~~——~~|ISD= 12 A,VDD= 60 V<br>di/dt=100 A/μs,<br>Tj=150 °C_(see_<br>_Figure 21)_<br>~~Fe~~|-<br>~~Fe~~|630<br>~~Fe~~|~~Fe~~|ns<br>~~Fe~~|
|Qrr<br>~~——~~|Reverse recovery charge<br>~~——~~||-<br>~~Fe~~|9.2<br>~~Fe~~|~~Fe~~|μC<br>~~Fe~~|
|IRRM<br>~~——~~|Reverse recovery current<br>~~——~~||-<br>~~Fe~~|29<br>~~Fe~~|~~Fe~~|A<br>~~Fe~~|



The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

## **Figure 2. Safe operating area for TO-220FP** 

**Figure 3. Thermal impedance for TO-220FP** 

**==> picture [205 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM18027v1<br>(A)<br>Soi<br>ee Ue<br>10<br>NON OCNU SN<br>"N: NS NI 10µs<br>XN ONN<br>100µs<br>1<br>1ms<br>Ny<br>10ms<br>0.1<br>Tj=150°C<br>Tc=25°C<br>Single pulse<br>0.01<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 4. Safe operating area for TO-220** 

## **Figure 5. Thermal impedance for TO-220** 

**==> picture [201 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM18028v1<br>(A)<br>MM,<br>YONONS,<br>10 NNN,<br>VONON 10µs<br>\, Na 100µs<br>\N 1ms<br>1 \<br>10ms<br>Tj=150°C<br>Tc=25 ° C<br>Single pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 6. Safe operating area for TO-247** 

**Figure 7. Thermal impedance for TO-247** 

**==> picture [201 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM18029v1<br>(A)<br>ts ths<br>t,<br>xn\\<br>,<br>\ \, \, \,<br>10 NNN 10µs<br>YON ON<br>NOON, 100µs<br>VN 1ms<br>1 YI<br>10ms<br>TTj=150c=25°C°C Nf<br>Single pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**==> picture [460 x 657] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 8. Output characteristics Figure 9. Transfer characteristics<br>AM18030v1 AM18031v1<br>ID(A) ID<br>VGS=10, 11V (A)<br>VDS=20V<br>25 25<br>9V<br>20 20<br>15 15<br>8V<br>10 10<br>7V<br>5 5<br>6V<br>0 0<br>AA 0 5 10 15 20 VDS(V) 5 6 7 8 9 10 VGS(V)<br>Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance<br>VGS AM18032v1 VDS RDS(on) AM18033v1<br>(V) (V) (Ω)<br>VDD=760 V 800 0.8 VGS=10V<br>12<br>ID=12 A<br>VDS 700 0.7<br>10<br>600 0.6<br>8 500 0.5<br>400 0.4<br>6<br>300 0.3<br>4<br>200 0.2<br>2<br>100 0.1<br>0 0 0<br>0 5 10 15 20 25 30 Qg(nC) 2 4 6 8 10 ID(A)<br>Figure 12. Capacitance variations Figure 13. Output capacitance stored energy<br>C AM18034v1 Eoss AM18035v1<br>(pF) (µJ)<br>14<br>1000 Ciss<br>12<br>100 10<br>Coss 8<br>10<br>6<br>Crss<br>4<br>1<br>2<br>0.1 0<br>1) 0.1 1 10 100 VDS(V) 0 200 400 600 800 VDS(V)<br>DocID025280 Rev 2 7/18<br>**----- End of picture text -----**<br>


7/18 

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**Electrical characteristics** 

**Figure 14. Normalized gate threshold voltage vs temperature** 

**==> picture [202 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS(th) AM18036v1<br>(norm)<br>1.2 ID=100µA<br>1<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>-100 -50 0 50 100 150 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 16. Normalized VDS vs temperature** 

**==> picture [199 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS AM18038v1<br>(norm)<br>ID=1mA<br>1.1<br>1.05<br>1<br>0.95<br>0.9<br>0.85<br>-100 -50 0 50 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 15. Normalized on-resistance vs temperature** 

**==> picture [205 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
RDS(on) AM18037v1<br>(norm)<br>2.5 ID=6A<br>VGS=10V<br>2<br>1.5<br>1<br>0.5<br>0<br>-100 0 100 TJ(°C)<br>**----- End of picture text -----**<br>


**Figure 17. Source-drain diode forward characteristics** 

**==> picture [201 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM18039v1<br>VSD(V)<br>1 T J =-50°C<br>0.9<br>TJ=25°C<br>0.8<br>0.7<br>TJ=150°C<br>0.6<br>0.5<br>2 4 6 8 10 ISD(A)<br>**----- End of picture text -----**<br>


**Figure 18. Maximum avalanche energy vs starting TJ** 

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**STF15N95K5, STP15N95K5, STW15N95K5** 

**Test circuits** 

## **3 Test circuits** 

**Figure 19. Switching times test circuit for resistive load** 

**Figure 20. Gate charge test circuit** 

**==> picture [442 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>2200<br>RG D.U.T. μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [445 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform<br>V(BR)DSS ton toff<br>VD tdon tr tdoff tf<br>90% 90%<br>IDM<br>10%<br>ID 0 10% VDS<br>VDD VDD 90%<br>VGS<br>AM01472v1 0 10% AM01473v1<br>**----- End of picture text -----**<br>


DocID025280 Rev 2 

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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

10/18 

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**Package mechanical data** 

## **Figure 25. TO-220FP drawing** 

**==> picture [53 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


DocID025280 Rev 2 

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**STF15N95K5, STP15N95K5, STW15N95K5** 

**Package mechanical data** 

**Table 9. TO-220FP mechanical data** 

||**Table 9. TO-220FP mechanical data**|**Table 9. TO-220FP mechanical data**|**Table 9. TO-220FP mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm**<br>~~ee ee~~|||
||**Min.**<br>~~es~~|**Typ.**<br>~~es~~<br>~~ee ee~~|**Max.**<br>~~es~~<br>~~ee~~|
|A<br>~~a~~|4.4|~~ee ee~~|4.6<br>~~ee~~|
|B<br>~~a~~|2.5||2.7|
|D<br>~~a~~|2.5||2.75|
|E<br>~~a~~<br>~~Rs~~|0.45||0.7|
|F<br>~~Rs~~<br>~~Rs~~|0.75||1|
|F1<br>~~Rs~~<br>~~Rs~~|1.15||1.70|
|F2<br>~~Rs~~<br>~~a~~|1.15||1.70|
|G<br>~~a~~|4.95||5.2|
|G1<br>~~a~~|2.4||2.7|
|H<br>~~a~~<br>~~Rs~~|10||10.4|
|L2<br>~~Rs~~<br>~~Rs~~||16||
|L3<br>~~Rs~~<br>~~Rs~~|28.6||30.6|
|L4<br>~~Rs~~<br>~~a~~|9.8||10.6|
|L5<br>~~a~~|2.9||3.6|
|L6<br>~~a~~|15.9||16.4|
|L7<br>~~a~~|9<br>||9.3<br>|
|Dia<br>~~ss~~|3<br>~~ss~~|~~ss~~|3.2<br>~~ss~~|



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**STF15N95K5, STP15N95K5, STW15N95K5** 

**Package mechanical data** 

## **Figure 26. TO-220 type A drawing** 

DocID025280 Rev 2 

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**Package mechanical data** 

**Table 10. TO-220 type A mechanical data** 

**mm Dim. Min. Typ. Max.** ~~es~~ A 4.40 4.60 ~~a ee ee~~ b 0.61 0.88 ~~a~~ b1 1.14 1.70 ~~a~~ c 0.48 0.70 ~~a~~ D 15.25 15.75 ~~Ge~~ D1 1.27 ~~Ge~~ E 10 10.40 ~~a~~ e 2.40 2.70 ~~a~~ e1 4.95 5.15 ~~a~~ F 1.23 1.32 ~~a~~ H1 6.20 6.60 ~~Ge~~ J1 2.40 2.72 ~~Ge~~ L 13 14 ~~a~~ L1 3.50 3.93 ~~a~~ L20 16.40 ~~a~~ L30 28.90 ~~a Ge~~ ∅P 3.75 3.85 Q 2.65 2.95 ~~Ge~~ 

14/18 

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**STF15N95K5, STP15N95K5, STW15N95K5** 

**Package mechanical data** 

## **Figure 27. TO-247 drawing** 

**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


## **Table 11. TO-247 mechanical data** 

||**Table 11. TO-247 mechanical data**|**Table 11. TO-247 mechanical data**|**Table 11. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**|**mm.**<br>**Min.**<br>**Typ.**<br>**Max.**|||
|||**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|



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**STF15N95K5, STP15N95K5, STW15N95K5** 

**Package mechanical data** 

**Table 11. TO-247 mechanical data (continued)** 

||**Table 11. TO-247 mechanical data (continued)(continued)continued))**|**Table 11. TO-247 mechanical data (continued)(continued)continued))**|**Table 11. TO-247 mechanical data (continued)(continued)continued))**|
|---|---|---|---|
|**Dim.**|**mm.**|||
||**Min.**|**Typ.**|**Max.**|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S|5.30|5.50|5.70|



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**Revision history** 

## **5 Revision history** 

**Table 12. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|20-Sep-2013|1|First release.|
|07-Feb-2014|2|– Modified: IARand EASvalues in_Table 2_<br>– Added:note _4_in_Table 2_<br>– Modified: Rthj-casevalues in_Table 3_<br>– Modified: typical values in_Table 5_,_6_and_7_<br>– Added:_Section 2.1: Electrical characteristics (curves)_<br>– Updated:_Figure 19_,_20_,_21_and_22_<br>– Minor text changes|



DocID025280 Rev 2 

17/18 

**STF15N95K5, STP15N95K5, STW15N95K5** 

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## Links

- [View this product on Novapart](https://novapart.co/products/STW15N95K5/power-mosfet-n-channel-950-v-12-a-041-ohm-to-247)
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---

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