# Power MOSFET, N Channel, 600 V, 11 A, 0.35 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:2807315/)

**URL**: https://novapart.co/products/STW13N60M2/power-mosfet-n-channel-600-v-11-a-035-ohm-to-247
**SKU**: STW13N60M2
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh II Plus |
| Power Dissipation | 110W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 110W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.35ohm |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 600V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 11A |
| Drain Source On State Resistance | 0.35ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2807315/)

**STP13N60M2, STU13N60M2,** ~~[7~~ >HI nted **STW13N60M2** N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Q g Power MOSFETs in TO-220, IPAK and TO-247 packages 

− **Datasheet production data** 

## **Features** 

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**----- Start of picture text -----**<br>
TAB<br>TAB<br>3 Order codes VDS @ TJmax RDS(on) max ID<br>2<br>3 1 STP13N60M2<br>2<br>1 IPAK<br>STU13N60M2 650 V 0.38 Ω 11 A<br>TO-220<br>STW13N60M2<br>• Extremely low gate charge<br>• Lower RDS(on) x area vs previous generation<br>3<br>. 1 2 =—mi • Low gate input resistance<br>TO-247 • 100% avalanche tested<br>**----- End of picture text -----**<br>


- Zener-protected 

## **Figure 1. Internal schematic diagram** 

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, TAB<br>**----- End of picture text -----**<br>


## **Applications** 

- Switching applications 

## **Description** 

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AM15572v1<br>**----- End of picture text -----**<br>


These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. 

**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STP13N60M2<br>STU13N60M2<br>STW13N60M2|13N60M2|TO-220|Tube|
|||IPAK||
|||TO-247||



_www.st.com_ 

February 2014 

DocID023937 Rev 5 

1/18 

This is information on a product in full production. 

|**Contents**|**STP13N60M2, STU13N60M2, STW13N60M2**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**3**|**Test circuits     . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**5**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 25|V|
|ID|Drain current (continuous) at TC= 25 °C|11|A|
|ID|Drain current (continuous) at TC= 100 °C|7|A|
|IDM<br>(1)|Drain current (pulsed)|44|A|
|PTOT|Total dissipation at TC= 25 °C|110|W|
|dv/dt(2)|Peak diode recovery voltage slope|15|V/ns|
|dv/dt(3)|MOSFET dv/dt ruggedness|50|V/ns|
|Tstg|Storage temperature|- 55 to 150|°C|
|Tj|Max. operating junction temperature|||



1. Pulse width limited by safe operating area. 

2. ISD ≤ 11 A, di/dt  ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V. 

3. VDS ≤ 480 V 

**Table 3. Thermal data** 

**Value Symbol Parameter Unit TO-220 IPAK TO-247** Rthj-case Thermal resistance junction-case max 1.14 °C/W ~~————e~~ Rthj-amb Thermal resistance junction-ambient max 62.5 100 50 °C/W **Table 4. Avalanche characteristics Symbol Parameter Value Unit** Avalanche current, repetitive or not IAR repetitive (pulse width limited by Tjmax ) 2.8 A Single pulse avalanche energy (starting ~~—~~ EAS Tj=25°C, ID= IAR; VDD=50) 125 mJ 

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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TC = 25 °C unless otherwise specified) 

**Table 5. On /off states** 

|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>V(BR)DSS<br>Drain-source<br>breakdown voltage<br>ID= 1 mA, VGS= 0<br>600<br>V<br>IDSS<br>Zero gate voltage<br>drain current (VGS= 0)<br>VDS= 600 V<br>VDS= 600 V, TC=125 °C<br>1<br>100<br>μA<br>μA<br>IGSS<br>Gate-body leakage<br>current (VDS= 0)<br>VGS= ± 25 V<br>±10<br>μA<br>VGS(th)<br>Gate threshold voltage VDS= VGS, ID= 250 μA<br>2<br>3<br>4<br>V<br>RDS(on)<br>Static drain-source<br>on-resistance<br>VGS= 10 V, ID= 5.5 A<br>0.35<br>0.38<br>Ω<br>~~Sie~~|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>V(BR)DSS<br>Drain-source<br>breakdown voltage<br>ID= 1 mA, VGS= 0<br>600<br>V<br>IDSS<br>Zero gate voltage<br>drain current (VGS= 0)<br>VDS= 600 V<br>VDS= 600 V, TC=125 °C<br>1<br>100<br>μA<br>μA<br>IGSS<br>Gate-body leakage<br>current (VDS= 0)<br>VGS= ± 25 V<br>±10<br>μA<br>VGS(th)<br>Gate threshold voltage VDS= VGS, ID= 250 μA<br>2<br>3<br>4<br>V<br>RDS(on)<br>Static drain-source<br>on-resistance<br>VGS= 10 V, ID= 5.5 A<br>0.35<br>0.38<br>Ω<br>~~Sie~~|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>V(BR)DSS<br>Drain-source<br>breakdown voltage<br>ID= 1 mA, VGS= 0<br>600<br>V<br>IDSS<br>Zero gate voltage<br>drain current (VGS= 0)<br>VDS= 600 V<br>VDS= 600 V, TC=125 °C<br>1<br>100<br>μA<br>μA<br>IGSS<br>Gate-body leakage<br>current (VDS= 0)<br>VGS= ± 25 V<br>±10<br>μA<br>VGS(th)<br>Gate threshold voltage VDS= VGS, ID= 250 μA<br>2<br>3<br>4<br>V<br>RDS(on)<br>Static drain-source<br>on-resistance<br>VGS= 10 V, ID= 5.5 A<br>0.35<br>0.38<br>Ω<br>~~Sie~~|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>V(BR)DSS<br>Drain-source<br>breakdown voltage<br>ID= 1 mA, VGS= 0<br>600<br>V<br>IDSS<br>Zero gate voltage<br>drain current (VGS= 0)<br>VDS= 600 V<br>VDS= 600 V, TC=125 °C<br>1<br>100<br>μA<br>μA<br>IGSS<br>Gate-body leakage<br>current (VDS= 0)<br>VGS= ± 25 V<br>±10<br>μA<br>VGS(th)<br>Gate threshold voltage VDS= VGS, ID= 250 μA<br>2<br>3<br>4<br>V<br>RDS(on)<br>Static drain-source<br>on-resistance<br>VGS= 10 V, ID= 5.5 A<br>0.35<br>0.38<br>Ω<br>~~Sie~~|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>V(BR)DSS<br>Drain-source<br>breakdown voltage<br>ID= 1 mA, VGS= 0<br>600<br>V<br>IDSS<br>Zero gate voltage<br>drain current (VGS= 0)<br>VDS= 600 V<br>VDS= 600 V, TC=125 °C<br>1<br>100<br>μA<br>μA<br>IGSS<br>Gate-body leakage<br>current (VDS= 0)<br>VGS= ± 25 V<br>±10<br>μA<br>VGS(th)<br>Gate threshold voltage VDS= VGS, ID= 250 μA<br>2<br>3<br>4<br>V<br>RDS(on)<br>Static drain-source<br>on-resistance<br>VGS= 10 V, ID= 5.5 A<br>0.35<br>0.38<br>Ω<br>~~Sie~~|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>V(BR)DSS<br>Drain-source<br>breakdown voltage<br>ID= 1 mA, VGS= 0<br>600<br>V<br>IDSS<br>Zero gate voltage<br>drain current (VGS= 0)<br>VDS= 600 V<br>VDS= 600 V, TC=125 °C<br>1<br>100<br>μA<br>μA<br>IGSS<br>Gate-body leakage<br>current (VDS= 0)<br>VGS= ± 25 V<br>±10<br>μA<br>VGS(th)<br>Gate threshold voltage VDS= VGS, ID= 250 μA<br>2<br>3<br>4<br>V<br>RDS(on)<br>Static drain-source<br>on-resistance<br>VGS= 10 V, ID= 5.5 A<br>0.35<br>0.38<br>Ω<br>~~Sie~~|**Symbol**<br>**Parameter**<br>**Test conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>V(BR)DSS<br>Drain-source<br>breakdown voltage<br>ID= 1 mA, VGS= 0<br>600<br>V<br>IDSS<br>Zero gate voltage<br>drain current (VGS= 0)<br>VDS= 600 V<br>VDS= 600 V, TC=125 °C<br>1<br>100<br>μA<br>μA<br>IGSS<br>Gate-body leakage<br>current (VDS= 0)<br>VGS= ± 25 V<br>±10<br>μA<br>VGS(th)<br>Gate threshold voltage VDS= VGS, ID= 250 μA<br>2<br>3<br>4<br>V<br>RDS(on)<br>Static drain-source<br>on-resistance<br>VGS= 10 V, ID= 5.5 A<br>0.35<br>0.38<br>Ω<br>~~Sie~~|
|---|---|---|---|---|---|---|
|||**Table 6. Dynamic**|||||
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|Ciss|Input capacitance||-|580|-|pF|
|Coss|Output capacitance|VDS= 100 V, f = 1 MHz,|-|32|-|pF|
|Crss|Reverse transfer<br>capacitance|VGS= 0|-|1.1|-|pF|
|Coss eq.<br>(1)|Equivalent output<br>capacitance|VDS= 0 to 480 V, VGS= 0|-|120|-|pF|
|RG|Intrinsic gate<br>resistance|f = 1 MHz open drain|-|6.6|-|Ω|
|Qg|Total gate charge||-|17|-|nC|
|Qgs|Gate-source charge|VDD= 480 V, ID= 11 A,<br>VGS= 10 V (see_Figure 17_)|-|2.5|-|nC|
|Qgd|Gate-drain charge||-|9|-|nC|



1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

**Table 7. Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay time|VDD= 300 V, ID= 5.5 A,<br>RG= 4.7Ω,VGS= 10 V      (see<br>_Figure 16_and_21_)|-|11|-|ns|
|tr|Rise time||-|10|-|ns|
|td(off)|Turn-off delay time||-|41|-|ns|
|tf|Fall time||-|9.5|-|ns|



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**Electrical characteristics** 

**Table 8. Source drain diode** 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test conditions**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
|ISD<br>~~a~~|Source-drain current<br>||-<br>||11<br>|A<br>|
|ISDM (1)<br>~~aRe~~|Source-drain current (pulsed)<br>~~Re~~|~~Re~~|-<br>~~Re~~|~~Re~~|44<br>~~Re~~|A<br>~~Re~~|
|VSD (2)<br>~~Re~~<br>~~a~~<br>~~ee~~<br>~~a~~|Forward on voltage<br>~~Re~~<br>~~ee~~|ISD= 11 A, VGS= 0<br>~~Re~~<br>~~ee~~|-<br>~~Re~~<br>~~_|~~|~~Re~~<br>~~_|~~<br>~~|~~|1.6<br>~~Re~~<br>~~_|~~<br>~~||~~|V<br>~~Re~~<br>~~_|~~<br>~~|~~|
|trr<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~a~~|Reverse recovery time<br>~~ee~~<br>~~eee~~|ISD= 11 A, di/dt = 100 A/μs<br>VDD= 60 V (see_Figure 18_)<br>~~ee~~<br>~~eee~~<br>~~eee~~<br>~~ee~~|-<br>~~_|~~<br>~~|~~|297<br>~~_|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~_|~~<br>~~||~~<br>~~|~~<br>~~||~~|ns<br>~~_|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|Qrr<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~es~~|Reverse recovery charge<br>~~ee~~<br>~~eee~~<br>~~eee~~||-<br>~~_|~~<br>~~|~~<br>~~|~~|2.8<br>~~_|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|~~_|~~<br>~~| |~~<br>~~|~~<br>~~||~~<br>~~|~~<br>~~||~~|μC<br>~~_|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|IRRM<br>~~a~~<br>~~es~~<br>~~a~~|Reverse recovery current<br>~~eee~~<br>~~eee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~|18.5<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~|~~|~~<br>~~| |~~<br>~~|~~<br>~~||~~<br>~~|~~<br>~~**|**|~~|A<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|
|trr<br>~~es~~<br>~~a~~<br>~~es~~|Reverse recovery time<br>~~eee~~<br>~~ee~~|ISD= 11 A, di/dt = 100 A/μs<br>VDD= 60 V, Tj=150 °C<br>(see_Figure 18_)<br>~~eee~~<br>~~ee~~|-<br>~~|~~<br>~~|~~|394<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~**|**~~|~~|~~<br>~~||~~<br>~~|~~<br>~~**|**|~~<br>~~**||**~~|ns<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~|
|Qrr<br>~~es~~<br>~~a~~<br>~~es~~|Reverse recovery charge<br>~~ee~~<br>~~eee~~||-<br>~~|~~<br>~~_~~<br>~~|~~|3.8<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~_~~<br>~~**|**~~<br>~~|~~|~~| |~~<br>~~|~~<br>~~**|** |~~<br>~~**||**~~<br>~~|~~|μC<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~|~~|
|IRRM<br>~~es~~|Reverse recovery current<br>~~eee~~||-<br>~~|~~|19<br>~~**|**~~<br>~~|~~|~~**||**~~<br>~~|~~|A<br>~~**|**~~<br>~~|~~|



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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for TO-220 and Figure 3. Thermal impedance for TO-220 and TO-247 TO-247** 

**==> picture [200 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM15710v1<br>(A)<br>SS CEE EH 2 PE it me<br>\ . i \<br>YN NN<br>\, \ \, \,<br>10 No NN 10µs<br>NVVNONON! 100 µS<br>NN<br>\ Nj 1ms<br>1 \<br>\<br>\<br>10ms<br>Tj=150 ° C<br>Tc=25°C<br>Single pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 4. Safe operating area for IPAK** 

## **Figure 5. Thermal impedance for IPAK** 

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**----- Start of picture text -----**<br>
ID AM15711v1<br>(A)<br>SSI NTT,<br>culm ‘i<br>NaN \ \<br>LS N 10µs<br>10 PIE ATL<br>NONHN NTNi<br>NasVN ] 100 µS<br>\ NI<br>VN<br>1 YON 1ms<br>\<br>N\<br>Tj=150 ° C 10ms<br>Tc=25°C<br>Single pulse<br>0.1<br>0.1 1 10 100 VDS(V)<br>DS(on)<br>Operation in this area is<br>Limited by max R<br>**----- End of picture text -----**<br>


**Figure 6. Output characteristics** 

**Figure 7. Transfer characteristics** 

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**----- Start of picture text -----**<br>
AM15712v1 AM15713v1<br>ID ID (A)<br>(A) VGS=7, 8, 9, 10V<br>20 20 V DS =18V<br>6V<br>16 16<br>12 12<br>5V<br>8 8<br>4 4<br>4V<br>0 0<br>0 4 8 12 16 VDS(V) 0 2 4 6 8 VGS(V)<br>**----- End of picture text -----**<br>


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STP13N60M2, STU13N60M2, STW13N60M2 Electrical characteristics<br>Figure 8. Normalized V(BR)DSS vs temperature Figure 9. Static drain-source on-resistance<br>AM15714v1 AM15715v1<br>V(BR)DSS RDS(on)<br>(norm) (Ω)<br>ID=1 mA<br>VGS=10V<br>1.1<br>0.370<br>1.06<br>0.360<br>1.02<br>0.350<br>0.98<br>0.340<br>0.94<br>0.9 0.330<br>-50 0 50 100 TJ(°C) 0 2 4 6 8 10 ID(A)<br>Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations<br>VGS AM15716v1 C AM15717v1<br>VDS<br>(V) (pF)<br>VDD=480V (V)<br>VDS<br>10 I D =11A 500 1000<br>Ciss<br>8 400<br>100<br>6 300<br>Coss<br>10<br>4 200<br>1 Crss<br>2 100<br>0 0 0.1<br>0 4 8 12 16 Qg(nC) 0.1 1 10 100 VDS(V)<br>Figure 12. Normalized gate threshold voltage vs  Figure 13. Normalized on-resistance vs<br>temperature temperature<br>VGS(th) AM15718v1 RDS(on) AM15719v1<br>(norm) (norm)<br>ID=5.5 A<br>1.1 I D =250µA 2.1 VGS=10V<br>1.0<br>1.7<br>0.9<br>1.3<br>0.8<br>0.9<br>0.7<br>0.6 0.5<br>-50 0 50 100 TJ(°C) -50 0 50 100 TJ(°C)<br>ce<br>DocID023937 Rev 5 7/18<br>**----- End of picture text -----**<br>


**STP13N60M2, STU13N60M2, STW13N60M2** 

**Electrical characteristics** 

**Figure 14. Source-drain diode forward characteristics** 

**Figure 15. Output capacitance stored energy** 

**==> picture [430 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
AM15720v1 AM15721v1<br>VSD (V) Eoss(µJ)<br>TJ=-50°C<br>1<br>4<br>0.9 TJ=25 ° C<br>3<br>0.8<br>2<br>0.7 T J =150°C<br>1<br>0.6<br>0.5 0<br>0 2 4 6 8 10 ISD(A) 0 100 200 300 400 500 VDS(V)<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 16. Switching times test circuit for resistive load** 

**Figure 17. Gate charge test circuit** 

**==> picture [452 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>12V 47kΩ<br>1kΩ<br>100nF<br>RL 2200 3.3<br>μF μF<br>VDD IG=CONST<br>VD Vi=20V=VGMAX 100Ω D.U.T.<br>VGS<br>JL RG D.U.T. 2200μF 2.7kΩ VG<br>PW<br>47kΩ<br>1kΩ<br>PW<br>AM01468v1 AM01469v1<br>**----- End of picture text -----**<br>


**Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit switching and diode recovery times** 

**==> picture [445 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>A A A<br>D<br>FAST L=100μH VD<br>G D.U.T. DIODE 2200 3.3<br>S B 3.3 1000 μF μF VDD<br>25 Ω B B D μF μF VDD ID<br>G<br>RG S<br>Vi D.U.T.<br>Pw<br>AM01470v1 AM01471v1<br>Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform<br>ton toff<br>tdon tr tdoff tf<br>90% 90%<br>10%<br>0 10% VDS<br>90%<br>VGS<br>0 10% AM01473v1<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _www.st.com_ . ECOPACK[®] is an ST trademark. 

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**Package mechanical data** 

## **Figure 22. TO-220 type A drawing** 

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**Package mechanical data** 

**Table 9. TO-220 type A mechanical data** 

**mm Dim. Min. Typ. Max.** ~~es~~ A 4.40 4.60 ~~a ee ee~~ b 0.61 0.88 ~~a~~ b1 1.14 1.70 ~~a~~ c 0.48 0.70 ~~a~~ D 15.25 15.75 ~~Ge~~ D1 1.27 ~~Ge~~ E 10 10.40 ~~a~~ e 2.40 2.70 ~~a~~ e1 4.95 5.15 ~~a~~ F 1.23 1.32 ~~a~~ H1 6.20 6.60 ~~Ge~~ J1 2.40 2.72 ~~Ge~~ L 13 14 ~~a~~ L1 3.50 3.93 ~~a~~ L20 16.40 ~~a~~ L30 28.90 ~~a Ge~~ ∅P 3.75 3.85 Q 2.65 2.95 ~~Ge~~ 

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**Package mechanical data** 

## **Figure 23. IPAK (TO-251) drawing** 

**==> picture [32 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
0068771_K<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 10. IPAK (TO-251) mechanical data** 

||**Table 10. IPAK (TO-251) mechanical data(TO-251) mechanical dataTO-251) mechanical data) mechanical data mechanical data**|**Table 10. IPAK (TO-251) mechanical data(TO-251) mechanical dataTO-251) mechanical data) mechanical data mechanical data**|**Table 10. IPAK (TO-251) mechanical data(TO-251) mechanical dataTO-251) mechanical data) mechanical data mechanical data**|
|---|---|---|---|
|**DIM**|**mm.**|||
||**min.**<br>~~a~~|**typ.**<br>~~a~~|**max.**|
|A<br>~~|~~<br>~~|~~|2.20<br>~~|~~|~~ee~~|2.40<br>~~ee~~|
|A1<br>~~|~~<br>~~|~~|0.90<br>~~|~~|~~ee~~|1.10<br>~~ee~~|
|b<br>~~|~~<br>~~|~~|0.64<br>~~|~~|~~ee~~|0.90<br>~~ee~~|
|b2<br>~~|~~<br>~~|~~|~~|~~|~~|~~<br>~~TT~~|0.95<br>~~|~~|
|b4<br>~~|~~<br>~~|~~|5.20<br>~~|~~|~~|~~<br>~~TT~~|5.40<br>~~|~~|
|B5<br>~~|~~<br>~~|~~|~~|~~|0.30<br>~~|~~<br>~~TT~~|~~|~~|
|c<br>~~|~~<br>~~a~~<br>~~|~~|0.45<br>~~|~~|~~ee~~|0.60<br>~~ee~~|
|c2<br>~~|~~<br>~~a~~<br>~~|~~|0.48<br>~~|~~|~~ee~~|0.60<br>~~ee~~|
|D<br>~~|~~<br>~~a~~<br>~~|~~|6.00<br>~~|~~|~~ee~~|6.20<br>~~ee~~|
|E<br>~~ee~~|6.40|~~|~~|6.60<br>~~|~~|
|e<br>~~ee~~||2.28<br>~~|~~<br>~~TT~~|~~|~~|
|e1<br>~~ee~~|4.40|~~|~~|4.60<br>~~|~~|
|H<br>~~a~~<br>~~ee~~|~~ee~~|16.10<br>~~|~~|~~|~~|
|L<br>~~ee~~|9.00<br>~~ee~~|~~|~~<br>~~|~~|9.40<br>~~|~~<br>~~|~~|
|L1<br>~~ee~~<br>~~|~~<br>~~|~~|0.80<br>~~ee~~<br>~~|~~<br>|~~|~~<br>~~|~~<br>~~|~~<br>|1.20<br>~~|~~<br>~~|~~<br>|
|L2<br>~~|~~<br>~~|~~|~~|~~<br>|0.80<br>~~|~~<br>~~|~~<br>|1.00<br>~~|~~<br>|
|V1<br>~~|~~<br>~~|pf~~|~~|~~<br>~~pf~~|10°<br>~~|~~<br>~~|~~<br>~~pf~~|~~|~~<br>~~pf~~|



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**Package mechanical data** 

## **Figure 24. TO-247 drawing** 

**==> picture [32 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


DocID023937 Rev 5 

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**Package mechanical data** 

**Table 11. TO-247 mechanical data** 

||**Table 11. TO-247 mechanical data**|**Table 11. TO-247 mechanical data**|**Table 11. TO-247 mechanical data**|
|---|---|---|---|
|**Dim.**<br>~~a~~|**mm.**<br>~~a~~<br>~~ee~~|||
||**Min.**<br>~~a~~|**Typ.**<br>~~a~~<br>~~ee~~|**Max.**<br>~~a~~|
|A<br>~~a~~|4.85|~~ee~~|5.15|
|A1<br>~~a~~|2.20||2.60|
|b<br>~~a~~|1.0||1.40|
|b1<br>~~a~~|2.0||2.40|
|b2<br>~~a~~|3.0||3.40|
|c<br>~~a~~<br>~~es~~|0.40||0.80|
|D<br>~~es~~|19.85||20.15|
|E<br>~~es~~<br>~~a~~|15.45||15.75|
|e<br>~~a~~|5.30|5.45|5.60|
|L<br>~~a~~|14.20||14.80|
|L1<br>~~a~~|3.70||4.30|
|L2<br>~~a~~<br>~~es~~||18.50||
|∅P<br>~~es~~|3.55||3.65|
|∅R<br>~~es~~<br>~~a~~|4.50||5.50|
|S<br>~~a~~|5.30|5.50|5.70|



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**Revision history** 

## **5 Revision history** 

**Table 12. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|18-Dec-2012|1|First release.|
|11-Apr-2013|2|– Added:note_3_in_Table 2_<br>– Modified: IDvalue on_Table 2_, IAR, IASon_Table 4_, RDS(on)on<br>_Table 5_<br>– Updated: typical values for_Table 6_,_7_and_8_<br>– Modified:_Figure 1_<br>– The part number STD13N60M2 has been moved to a separate<br>datasheet<br>– Added:_Section 2.1: Electrical characteristics (curves)_|
|17-Apr-2013|3|– Modified: Rthj-casevalue on_Table 3_, trr, qrrvalues, and trrfor<br>TJ= 150 °C on_Table 8_<br>– Minor text changes|
|28-Jun-2013|4|– Document status promoted from preliminary data to production<br>data<br>– Minor text changes|
|28-Feb-2014|5|– Updated:_Figure 22_and_Table 9_<br>– Minor text changes|



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