# Power MOSFET, N Channel, 800 V, 10.5 A, 0.65 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:9803858/)

**URL**: https://novapart.co/products/STW12NK80Z/power-mosfet-n-channel-800-v-105-a-065-ohm-to-247
**SKU**: STW12NK80Z
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.5100
**Stock**: 25+
**Lead Time**: 127 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:10.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.65ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power Dissipat

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 190W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 800V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 10.5A |
| Drain Source On State Resistance | 0.65ohm |
| Gate Source Threshold Voltage Max | 3.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9803858/)

**==> picture [61 x 39] intentionally omitted <==**

## **STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z** 

N-channel 800 V, 0.65Ω typ., 10.5 A Zener-protected SuperMESH™ Power MOSFET in D[2] PAK, TO-220FP, TO-220 and TO-247 

**Datasheet — production data** 

## **Features** 

|**Type**|**VDSS**<br>**(@Tjmax)**|**RDS(on)**|**ID**|**PW**|
|---|---|---|---|---|
|STB12NK80Z|800V|<0.75Ω|10.5 A|190W|
|STF12NK80Z|800V|<0.75Ω|10.5 A|40W|
|STP12NK80Z|800V|<0.75Ω|10.5 A|190W|
|STW12NK80Z|800V|<0.75Ω|10.5 A|190W|



- Extremely high dv/dt capability 

- Improved esd capability 

- 100% avalanche tested 

**==> picture [189 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
TAB<br>3<br>1 3<br>2<br>D [2] PAK 1<br>TO-220FP<br>TAB<br>3<br>2<br>1<br>TO-220 TO-247<br>**----- End of picture text -----**<br>


- Gate charge minimized 

- Very low intrinsic capacitances 

- Very good manufacturing reliability 

## **Applications** 

- Switching applications 

## **Description** 

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. 

## **Figure 1. Internal schematic diagram** 

**==> picture [220 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
D(2,TAB)<br>G(1)<br>S(3)<br>AM01476v1<br>**----- End of picture text -----**<br>


**Table 1. Device summary** 

|**Order codes**|**Marking**|**Package**|**Packaging**|
|---|---|---|---|
|STB12NK80Z|12NK80Z|D2PAK|Tape and reel|
|STF12NK80Z|12NK80Z|TO-220FP|Tube|
|STP12NK80Z|12NK80Z|TO-220|Tube|
|STW12NK80Z|12NK80Z|TO-247|Tube|



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August 2012 

Doc ID 9567 Rev 7 

This is information on a product in full production. 

_www.st.com_ 

|**Contents**|**STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3**|
|**2**|**Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5**|
||2.1<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10**|
|**4**|**Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11**|
|**5**|**Packaging mechanical data  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19**|
|**6**|**Revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21**|



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**Electrical ratings** 

## **1 Electrical ratings** 

## **Table 2. Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|
|||**D2PAK**<br>**TO-220**<br>**TO-247**|**TO-220FP**||
|VDS|Drain-source voltage (VGS= 0)|800||V|
|VDGR|Drain-gate voltage (RGS= 20KΩ)|800||V|
|VGS|Gate-source voltage|± 30||V|
|ID|Drain current (continuous) at TC= 25°C|10.5|10.5(1)|A|
|ID|Drain current (continuous) at TC=100°C|6.6|6.6(1)|A|
|IDM<br>(2)|Drain current (pulsed)|42|42(1)|A|
|PTOT|Total dissipation at TC= 25°C|190|40|W|
||Derating factor|1.52|0.32|W/°C|
|Vesd(G-S)|G-S ESD (HBM C= 100pF, R= 1.5kΩ)|4||kV|
|VISO|Insulation withstand voltage (DC)|--|2500|V|
|dv/dt(3)|Peak diode recovery voltage slope|4.5||V|
|TJ<br>Tstg|Operating junction temperature<br>Storage temperature|-55 to 150||°C|



1. Limited by maximum junction temperature. 

2. Pulse width limited by safe operating area. 

3. ISD ≤ 10.5 A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 

**Table 3. Thermal data** 

|**Table 3.**|**Thermal data**|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|||**Unit**|
|||**TO-220/**<br>**D²PAK**|**TO-220FP**|**TO-247**||
|Rthj-case|Thermal resistance junction-case max|0.66|3.1|0.66|°C/W|
|Rthj-a|Thermal resistance junction-ambient max|62.5||50|°C/W|



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**Electrical ratings** 

## **Table 4. Avalanche characteristics** 

|**Table 4.**|**Avalanche characteristics**|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|IAS|Avalanche current, repetitive or not-repetitive<br>(pulse width limited by Tj Max)|10.5|A|
|EAS|Single pulse avalanche energy<br>(starting Tj=25°C, Id=Iar, Vdd=50V)|400|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE=25°C unless otherwise specified). 

## **Table 5. On/off states** 

|**Table 5.**|**On/off states**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|V(BR)DSS|Drain-source breakdown<br>voltage|ID= 1mA, VGS= 0|800|||V|
|IDSS|Peak diode recovery<br>voltage slope|VDS= 800 V,<br>VDS=800 V, Tc=125°C|||1<br>50|µA<br>µA|
|IGSS|Gate body leakage current<br>(VGS= 0)|VGS= ± 20V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100µA|3|3.75|4.5|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10V, ID= 5.25A||0.65|0.75|Ω|



## **Table 6. Dynamic** 

|**Table 6.**|**Dynamic**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|gfs<br>(1)|Forward transconductance|VDS=15V, ID= 5.25A|-|12|-|S|
|Ciss<br>Coss<br>Crss|Input capacitance<br>Output capacitance<br>Reverse transfer<br>capacitance|VDS=25V, f=1 MHz, VGS=0|-|2620<br>250<br>53|-|pF<br>pF<br>pF|
|Cosseq<br>(2)|Equivalent output<br>capacitance|VGS=0, VDS=0V to 640V|-|100|-|pF|
|Qg<br>Qgs<br>Qgd|Total gate charge<br>Gate-source charge<br>Gate-drain charge|VDD=640V, ID= 10.5A<br>VGS=10V<br>(see_Figure 21_)|-|87<br>14<br>44|-|nC<br>nC<br>nC|
|td(on)<br>tr<br>td(off)<br>tf|Turn-on delay time<br>Rise time<br>Off-voltage rise time<br>Fall time|VDD=400 V, ID= 5.25A,<br>RG=4.7Ω,VGS=10V<br>(see_Figure 22_)|-|30<br>18<br>70<br>20|-|ns<br>ns<br>ns<br>ns|
|tr(Voff)<br>tf<br>tc|Off voltage rise time<br>Fall time<br>Cross-over time|VDD=640 V, ID= 10.5A,<br>RG=4.7Ω,VGS=10V<br>(see_Figure 22_)|-|16<br>15<br>28|-|ns<br>ns<br>ns|



1. Pulsed: pulse duration=300µs, duty cycle 1.5% 

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 

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**Electrical characteristics** 

**Table 7. Source drain diode** 

|**Table 7.**|**Source drain diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ISD<br>ISDM<br>(1)|Source-drain current<br>Source-drain current (pulsed)||-<br>-||10.5<br>42|A<br>A|
|VSD<br>(2)|Forward on voltage|ISD=10.5A, VGS=0|-||1.6|V|
|trr<br>Qrr<br>IRRM|Reverse recovery time<br>Reverse recovery charge<br>Reverse recovery current|ISD=10.5A,<br>di/dt = 100A/µs,<br>VDD=100V, Tj=150°C|-|635<br>5.9<br>18.5||ns<br>µC<br>A|



1. Pulse width limited by safe operating area. 

2. Pulsed: pulse duration=300µs, duty cycle 1.5% 

**Table 8. Gate-source zener diode** 

|**Table 8.**|**Gate-source zener diode**||||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test conditions**|**Min**|**Typ.**|**Max.**|**Unit**|
|BVGSO|Gate-Source breakdown<br>voltage|Igs=±1mA<br>(Open drain)|30|-|-|V|



The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2. Safe operating area for TO-220 and Figure 3. Thermal impedance for TO-220 and D²PAK D²PAK** 

**==> picture [158 x 156] intentionally omitted <==**

**==> picture [160 x 155] intentionally omitted <==**

## **Figure 4. Safe operating area for TO-220FP** 

**==> picture [205 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID AM14748v1<br>(A)<br>10  [1] Operation in this area is 10µs<br>Limited by max RDS(on)<br>100µs<br>10  [0] 1ms<br>10ms<br>Tj=150°C<br>10 [-1] Tc=25 ° C<br>Sinlge<br>pulse<br>10 [-2]<br>10 [-1] 10  [0] 10  [1] 10  [2] VDS(V)<br>**----- End of picture text -----**<br>


**Figure 5. Thermal impedance for TO-220FP** 

**==> picture [157 x 153] intentionally omitted <==**

## **Figure 6. Safe operating area for TO-247** 

**==> picture [158 x 156] intentionally omitted <==**

## **Figure 7. Thermal impedance for TO-247** 

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**Electrical characteristics** 

## **Figure 8. Output characteristics** 

**==> picture [165 x 155] intentionally omitted <==**

**Figure 10. Transconductance** 

**==> picture [162 x 156] intentionally omitted <==**

## **Figure 12. Gate charge vs gate-source voltage** 

**==> picture [170 x 154] intentionally omitted <==**

## **Figure 9. Transfer characteristics** 

**==> picture [157 x 155] intentionally omitted <==**

## **Figure 11. Static drain-source on-resistance** 

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## **Figure 13. Capacitance variations** 

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**Electrical characteristics** 

**Figure 14. Normalized gate threshold voltage vs temperature** 

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**Figure 16. Source-drain diode forward characteristics** 

**==> picture [173 x 156] intentionally omitted <==**

**Figure 15. Normalized on-resistance vs temperature** 

**==> picture [170 x 155] intentionally omitted <==**

**Figure 17. Normalized BVDSS vs temperature** 

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**Figure 18. Maximum avalanche energy vs temperature** 

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**Test circuits** 

## **3 Test circuits** 

**Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit resistive load** 

**==> picture [209 x 88] intentionally omitted <==**

**==> picture [179 x 121] intentionally omitted <==**

**Figure 21. Test circuit for inductive load switching and diode recovery times** 

**Figure 22. Unclamped Inductive load test circuit** 

**==> picture [200 x 117] intentionally omitted <==**

**==> picture [179 x 119] intentionally omitted <==**

## **Figure 23. Unclamped inductive waveform** 

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**Package mechanical data** 

## **4 Package mechanical data** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 

**Table 9. D²PAK (TO-263) mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|A1|0.03||0.23|
|b|0.70||0.93|
|b2|1.14||1.70|
|c|0.45||0.60|
|c2|1.23||1.36|
|D|8.95||9.35|
|D1|7.50|||
|E|10||10.40|
|E1|8.50|||
|e||2.54||
|e1|4.88||5.28|
|H|15||15.85|
|J1|2.49||2.69|
|L|2.29||2.79|
|L1|1.27||1.40|
|L2|1.30||1.75|
|R||0.4||
|V2|0°||8°|



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**Package mechanical data** 

**==> picture [173 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 24. D²PAK (TO-263) drawing<br>**----- End of picture text -----**<br>


**==> picture [405 x 320] intentionally omitted <==**

**----- Start of picture text -----**<br>
0079457_T<br>**----- End of picture text -----**<br>


## **Figure 25. D²PAK footprint[(a)]** 

**==> picture [405 x 232] intentionally omitted <==**

**----- Start of picture text -----**<br>
16.90<br>12.20 5.08<br>1.60<br>3.50<br>9.75<br>Footprint<br>**----- End of picture text -----**<br>


**==> picture [126 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
a. All dimension are in millimeters<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

**Table 10. TO-220FP mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.4||4.6|
|B|2.5||2.7|
|D|2.5||2.75|
|E|0.45||0.7|
|F|0.75||1|
|F1|1.15||1.70|
|F2|1.15||1.70|
|G|4.95||5.2|
|G1|2.4||2.7|
|H|10||10.4|
|L2||16||
|L3|28.6||30.6|
|L4|9.8||10.6|
|L5|2.9||3.6|
|L6|15.9||16.4|
|L7|9||9.3|
|Dia|3||3.2|



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**Package mechanical data** 

## **Figure 26. TO-220FP drawing** 

**==> picture [405 x 577] intentionally omitted <==**

**----- Start of picture text -----**<br>
7012510_Rev_K_B<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **Table 11. TO-220 type A mechanical data** 

|**Dim.**|**mm**|**mm**|**mm**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.40||4.60|
|b|0.61||0.88|
|b1|1.14||1.70|
|c|0.48||0.70|
|D|15.25||15.75|
|D1||1.27||
|E|10||10.40|
|e|2.40||2.70|
|e1|4.95||5.15|
|F|1.23||1.32|
|H1|6.20||6.60|
|J1|2.40||2.72|
|L|13||14|
|L1|3.50||3.93|
|L20||16.40||
|L30||28.90||
|∅P|3.75||3.85|
|Q|2.65||2.95|



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**Package mechanical data** 

**Figure 27. TO-220 type A drawing** 

**==> picture [405 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
0015988_typeA_Rev_S<br>**----- End of picture text -----**<br>


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**Package mechanical data** 

## **Table 12. TO-247 mechanical data** 

|**Dim.**|**mm.**|**mm.**|**mm.**|
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|∅P|3.55||3.65|
|∅R|4.50||5.50|
|S|5.30|5.50|5.70|



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**Package mechanical data** 

## **Figure 28. TO-247 drawing** 

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**----- Start of picture text -----**<br>
0075325_G<br>**----- End of picture text -----**<br>


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**Packaging mechanical data** 

## **5 Packaging mechanical data** 

**Table 13. D²PAK (TO-263) tape and reel mechanical data** 

||**Tape**|**Tape**||**Reel**|**Reel**|
|---|---|---|---|---|---|
|**Dim.**|**mm**||**Dim.**|**mm**||
||**Min.**|**Max.**||**Min.**|**Max.**|
|A0|10.5|10.7|A||330|
|B0|15.7|15.9|B|1.5||
|D|1.5|1.6|C|12.8|13.2|
|D1|1.59|1.61|D|20.2||
|E|1.65|1.85|G|24.4|26.4|
|F|11.4|11.6|N|100||
|K0|4.8|5.0|T||30.4|
|P0|3.9|4.1||||
|P1|11.9|12.1||Base qty|1000|
|P2|1.9|2.1||Bulk qty|1000|
|R|50|||||
|T|0.25|0.35||||
|W|23.7|24.3||||



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**Packaging mechanical data** 

## **Figure 29. Tape** 

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**----- Start of picture text -----**<br>
10 pitches cumulative<br>tolerance on tape +/- 0.2 mm<br>Top cover P0 D P2<br>T tape<br>E<br>000 00 000 6 00<br>F<br>K0 W<br>B0<br>A0 P1 D1<br>————_<br>User direction of feed<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
R<br>a DDD a a |<br>—_—_—_—_> Bending radius<br>User direction of feed<br>Reel<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
AM08852v2<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
T<br>REEL DIMENSIONS<br>40mm min.<br>Access hole<br>At sl ot location<br>B<br>D<br>C<br>N<br>A<br>Full radius Tape slot  G measured at hub<br>in core for<br>tape start 25 mm min.<br>width<br>AM08851v2<br>**----- End of picture text -----**<br>


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**Revision history** 

## **6 Revision history** 

## **Table 14. Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|22-Jun-2004|2|Preliminary version.|
|28-Jan-2005|3|Complete version.|
|08-Sep-2005|4|_Figure 2_and_Figure 6_changed.|
|31-Jul-2006|5|The document has been reformatted.|
|27-Apr-2007|6|Modified RDS(on)value on_Table 5_.|
|28-Aug-2012|7|Inserted new device in TO-220FP.<br>Updated_Table 1: Device summary_,_Table 2: Absolute maximum_<br>_ratings_and_Table 3: Thermal data_.<br>Updated_Section 4: Package mechanical data_and_Section 5:_<br>_Packaging mechanical data_.<br>Minor text changes in the cover page.|



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**STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z** 

## **Please Read Carefully:** 

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22/22 

Doc ID 9567 Rev 7 



## Links

- [View this product on Novapart](https://novapart.co/products/STW12NK80Z/power-mosfet-n-channel-800-v-105-a-065-ohm-to-247)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/stw12nk80z/mosfet-n-to-247/dp/9803858)
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