# Power MOSFET, N Channel, 1.5 kV, 7 A, 1.6 ohm, TO-247, Through Hole

![Product image](https://novapart.co/image/farnell:3367080/)

**URL**: https://novapart.co/products/STW12N150K5/power-mosfet-n-channel-15-kv-7-a-16-ohm-to-247
**SKU**: STW12N150K5
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.4700
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | MDmesh K5 |
| Qualification | - |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-247 |
| Drain Source Voltage Vds | 1.5kV |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 7A |
| Drain Source On State Resistance | 1.6ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3367080/)

## **STW12N150K5** 

N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh™ K5 Power MOSFET in a TO-247 package 

Datasheet - production data 

## **Features** 

**Order code VDS RDS(on) max. ID PTOT** STW12N150K5 1500 V 1.9 Ω 7 A 250 W ~~ae~~  Industry’s lowest RDS(on) * area 

- Industry’s best figure of merit (FoM) 

**==> picture [62 x 54] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>2<br>1<br>TO-247<br>**----- End of picture text -----**<br>


- Ultra low gate charge 

- 100% avalanche tested 

- Zener-protected 

## **Applications** 

- Switching applications 

**Figure 1: Internal schematic diagram** 

## **Description** 

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 

**Table 1: Device summary** 

**Order code Marking Package Packing** STW12N150K5 12N150K5 TO-247 Tube 

This is information on a product in full production. 

_www.st.com_ 

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|**Contents**<br>**STW12N150K5**|**Contents**<br>**STW12N150K5**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
|**2**|**Electrical characteristics ................................................................ 4**|
||2.1<br>Electrical characteristics (curves) ...................................................... 6|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Package information ..................................................................... 10**|
||4.1<br>TO-247 package information ........................................................... 10|
|**5**|**Revision history ............................................................................ 12**|



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**Electrical ratings** 

## **1 Electrical ratings** 

**Table 2: Absolute maximum ratings** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VGS|Gate-source voltage|± 30|V|
|ID|Drain current at TC= 25 °C|7|A|
|ID|Drain current at TC= 100 °C|4|A|
|IDM<br>_(1)_|Drain current (pulsed)|28|A|
|PTOT|Total dissipation at TC= 25 °C|250|W|
|dv/dt_(2)_|Peak diode recoveryvoltage slope|4.5|V/ns|
|dv/dt_(3)_|MOSFET dv/dt ruggedness|50|V/ns|
|Tj|Operating junction temperature|- 55 to 150|°C|
|Tstg|Storage temperature|||



## **Notes:** 

- (1) Pulse width limited by safe operating area 

(2) ISD ≤ 7 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS 

- (3) VDS ≤ 1200 V 

## **Table 3: Thermal data** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|Rthj-case|Thermal resistancejunction-case|0.5|°C/W|
|Rthj-amb|Thermal resistancejunction-amb|50|°C/W|



## **Table 4: Avalanche characteristics** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|IAR|Max current duringrepetitive or singlepulse avalanche|2|A|
|EAS|Singlepulse avalanche energy|900|mJ|



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**Electrical characteristics** 

## **2 Electrical characteristics** 

(TCASE = 25 °C unless otherwise specified) 

**Table 5: On/off states** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-source breakdown<br>voltage|VGS= 0 V, ID= 1 mA|1500|||V|
|IDSS|Zero gate voltage drain<br>current|VGS= 0 V, VDS= 1500 V|||1|µA|
|||VGS= 0 V, VDS= 1500 V,<br>Tc=125 °C|||50|µA|
|IGSS|Gate bodyleakage current|VDS= 0, VGS= ± 20 V|||±10|µA|
|VGS(th)|Gate threshold voltage|VDS= VGS, ID= 100µA|3|4|5|V|
|RDS(on)|Static drain-source on-<br>resistance|VGS= 10 V, ID= 3.5 A||1.6|1.9|Ω|



**Table 6: Dynamic** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Ciss|Input capacitance|VGS= 0 V, VDS= 100 V,<br>f = 1MHz|-|1360|-|pF|
|Coss|Output capacitance||-|80|-|pF|
|Crss|Reverse transfer<br>capacitance||-|0.7|-|pF|
|Co(tr)<br>_(1)_|Equivalent capacitance time<br>related|VDS= 0 V to 1200 V,<br>VGS= 0 V|-|82|-|pF|
|Co(er)<br>_(2)_|Equivalent capacitance<br>energy related||-|32|-|pF|
|RG|Intrinsicgate resistance|f = 1 MHz, ID= 0 A|-|3|-|Ω|
|Qg|Totalgate charge|VDD= 1200V, ID= 7 A<br>VGS= 10 V<br>(see_Figure 16: "Gate charge_<br>_test circuit"_)|-|47|-|nC|
|Qgs|Gate-source charge||-|8|-|nC|
|Qgd|Gate-drain charge||-|32|-|nC|



## **Notes:** 

(1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 

(2) Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS. 

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**Electrical characteristics** 

**Table 7: Switching times** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|td(on)|Turn-on delay<br>time|VDD= 750 V, ID= 3.5 A, RG= 4.7 Ω<br>VGS= 10 V<br>(see_Figure 18: "Unclamped inductive_<br>_load test circuit"_)|-|25|-|ns|
|tr|Rise time||-|8|-|ns|
|td(off)|Turn-off delay<br>time||-|90|-|ns|
|tf|Fall time||-|37|-|ns|



**Table 8: Source drain diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ISD|Source-drain<br>current||-||7|A|
|ISDM|Source-drain<br>current (pulsed)||-||28|A|
|VSD<br>_(1)_|Forward on<br>voltage|ISD= 7 A, VGS= 0 V|-||1.5|V|
|trr|Reverse recovery<br>time|ISD= 7 A, VDD= 60 V<br>di/dt = 100 A/µs,<br>(see_Figure 17: "Test circuit for_<br>_inductive load switching and diode_<br>_recovery times"_)|-|302||ns|
|Qrr|Reverse recovery<br>charge||-|3.71||µC|
|IRRM|Reverse recovery<br>current||-|24.6||A|
|trr|Reverse recovery<br>time|ISD= 7 A,VDD= 60 V<br>di/dt = 100 A/µs,<br>Tj = 150 °C<br>(see_Figure 17: "Test circuit for_<br>_inductive load switching and diode_<br>_recovery times"_)|-|432||ns|
|Qrr|Reverse recovery<br>charge||-|4.71||µC|
|IRRM|Reverse recovery<br>current||-|21.8||A|



## **Notes:** 

(1) Pulsed: pulse duration = 300µs, duty cycle 1.5% 

**Table 9: Gate-source Zener diode** 

|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)GSO|Gate-source breakdown voltage|IGS= ±1 mA, ID= 0 A|30|-||V|



The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and costeffective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. 

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**Electrical characteristics** 

## **2.1 Electrical characteristics (curves)** 

**Figure 2: Safe operating area** 

**==> picture [165 x 139] intentionally omitted <==**

**Figure 3: Thermal impedance** 

**==> picture [152 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
K GC18460<br>δ=0.5<br>0.2<br>0.1<br>10 [-1]<br>0.05<br>0.02<br>10 [-2] 0.01 Zth= K*R thj-c<br>Single pulse δ= t p/ Ƭ<br>t p Ƭ<br>10 [-3]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] tp (s)<br>**----- End of picture text -----**<br>


**Figure 4: Output characteristics** 

**==> picture [154 x 140] intentionally omitted <==**

**Figure 5: Transfer characteristics** 

**==> picture [154 x 140] intentionally omitted <==**

**Figure 6: Gate charge vs gate-source voltage** 

**==> picture [159 x 141] intentionally omitted <==**

**Figure 7: Static drain-source on-resistance** 

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**Electrical characteristics** 

**Figure 8: Capacitance variation** 

**==> picture [156 x 143] intentionally omitted <==**

**Figure 9: Output capacitance stored energy** 

**==> picture [161 x 142] intentionally omitted <==**

**Figure 10: Normalized gate threshold voltage Figure 11: Normalized on-resistance vs vs temperature temperature** 

**==> picture [162 x 141] intentionally omitted <==**

**==> picture [166 x 141] intentionally omitted <==**

**==> picture [410 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 13: Source-drain diode forward<br>Figure 12: Normalized V(BR)DSS vs temperature  characteristics<br>**----- End of picture text -----**<br>


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**Electrical characteristics** 

**==> picture [190 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 14: Maximum avalanche energy vs TJ<br>**----- End of picture text -----**<br>


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**Test circuits** 

## **3 Test circuits** 

**Figure 15: Switching times test circuit for resistive load** 

**==> picture [207 x 79] intentionally omitted <==**

**Figure 17: Test circuit for inductive load switching and diode recovery times** 

**==> picture [213 x 129] intentionally omitted <==**

**Figure 19: Unclamped inductive waveform** 

**Figure 16: Gate charge test circuit** 

**==> picture [200 x 148] intentionally omitted <==**

**Figure 18: Unclamped inductive load test circuit** 

**==> picture [161 x 146] intentionally omitted <==**

**Figure 20: Switching time waveform** 

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**Package information** 

## **4 Package information** 

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark. 

## **4.1 TO-247 package information** 

**Figure 21: TO-247 package outline** 

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**Package information** 

**Table 10: TO-247 package mechanical data** 

|**Dim.**||**mm.**||
|---|---|---|---|
||**Min.**|**Typ.**|**Max.**|
|A|4.85||5.15|
|A1|2.20||2.60|
|b|1.0||1.40|
|b1|2.0||2.40|
|b2|3.0||3.40|
|c|0.40||0.80|
|D|19.85||20.15|
|E|15.45||15.75|
|e|5.30|5.45|5.60|
|L|14.20||14.80|
|L1|3.70||4.30|
|L2||18.50||
|ØP|3.55||3.65|
|ØR|4.50||5.50|
|S|5.30|5.50|5.70|



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**Revision history** 

## **5 Revision history** 

**Table 11: Document revision history** 

|**Date**|**Revision**|**Changes**|
|---|---|---|
|11-May-2015|1|First release.|
|30-Jun-2015|2|Updated title and features in cover page. Updated_Section 4:_<br>_"Electrical ratings"_,_Section 5: "Electrical characteristics"_.<br>Added_Section 5.1: "Electrical characteristics (curves)"_.<br>Minor text changes.|
|07-Jul-2015|3|Updated_Section 5.1: "Electrical characteristics (curves)"_.<br>Minor text changes.|



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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** 

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. 

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. 

No license, express or implied, to any intellectual property right is granted by ST herein. 

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. 

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. 

Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 

- © 2015 STMicroelectronics – All rights reserved 

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- [Supplier page](https://es.farnell.com/stmicroelectronics/stw12n150k5/mosfet-n-ch-1-5kv-7a-150deg-c/dp/3367080)
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